Browsing by Issue Date, starting with "2006-12-25"

Now showing 1 - 20 of 62286

Investigation of void nucleation and propagation during electromigration of flip-chip solder joints using x-ray microscopy
(2006-12-25)
Chiu, S. H.
;
Chen, Chih
;
材料科學與工程學系
;
Department of Materials Science and Engineering
X-ray microscopy was employed to investigate void nucleation and propagation during electromigration in solder joints. The shape of the voids at various stages can be clearly observed. The voids became irregular when they propagated to deplete the contact opening. Growth velocity at the early stage was found to be 1.3 mu m/h under 6.5x10(3) A/cm(2) at 150 degrees C, and it decreased to 0.3 mu m/h at later stages. Formation of intermetallic compound (IMC) and compositional changes at the interface of solder/IMC on the chip side were attributed to the retarded growth rate at later stages. (c) 2006 American Institute of Physics.
Photoluminescence studies of type-II diluted magnetic semiconductor ZnMnTe/ZnSe quantum dots
(2006-12-25)
Kuo, M. C.
;
Hsu, J. S.
;
Shen, J. L.
;
Chiu, K. C.
;
Fan, W. C.
Type-II diluted magnetic semiconductor ZnMnTe quantum dots (QDs) in ZnSe matrix grown by molecular beam epitaxy were investigated by conventional and magnetophotoluminescence (PL) spectroscopy. The QD emission exhibits a type-II characteristic in excitation power dependence of PL peak energy. A nonzero circular polarization of PL at the absence of magnetic field was observed. This phenomenon is attributed to the accumulation of interface charges confined in adjacent layers. The magneto-optical measurement demonstrates a magnetic-induced degree of circular polarization in the PL spectra, indicating the Mn incorporation into the QD system. (c) 2006 American Institute of Physics.
Impacts of ammonia background flows on structural and photoluminescence properties of InN dots grown on GaN by flow-rate modulation epitaxy
(2006-12-25)
Ke, W. C.
;
Lee, L.
;
Chen, C. Y.
;
Tsai, W. C.
;
Chang, W. -H.
Structural and photoluminescence (PL) properties of InN dots grown on GaN by metal organic vapor phase epitaxy using the flow-rate modulation technique, and their dependence on growth conditions, were investigated. An ammonia (NH3) background flow was intentionally supplied during indium deposition periods to control the kinetics of adatoms and hence the morphology of InN dots. Samples prepared under lower NH3 background flows generally exhibit narrower and more intense PL signals peaked at lower emission energies. The authors point out that the NH3 background flow is an important parameter that controls not only the nucleation process but also the emission property of InN dots. (c) 2006 American Institute of Physics.
A tunable erbium-doped fiber ring laser with power-equalized output
(2006-12-25)
Yeh, Chien-Hung
;
Lin, Ming-Ching
;
Chi, Sien
;
光電工程學系
;
Department of Photonics
We propose and demonstrate a tunable erbium-based fiber ring laser with power-equalized output. When a mode-restricting intracavity fiber Fabry-Perot tunable filter (FFP-TF) is combined, the proposed resonator can guarantee a tunable laser oscillation. This proposed laser can obtain the flatter lasing wavelength in an effectively operating range of 1533.3 to 1574.6 nm without any other operating mechanism. Moreover, the performances of the output power, wavelength tuning range, and side-mode suppression ratio (SMSR) were studied. (C) 2006 Optical Society of America.
Tunable slow light device using quantum dot semiconductor laser
(2006-12-25)
Peng, P. C.
;
Lin, C. T.
;
Kuo, H. C.
;
Tsai, W. K.
;
Liu, J. N.
This investigation experimentally demonstrates a tunable slow light device using a quantum dot (QD) semiconductor laser. The QD semiconductor laser at 1.3 mu m fabricated on a GaAs substrate is grown by molecular beam epitaxy. Tunable slow light can be achieved by adjusting the bias current and wavelength detuning. The slow light device operated under probe signal from 5 to 10 GHz is presented. Moreover, we also demonstrate that the tunable slow light device can be used in a subcarrier multiplexed system. (C) 2006 Optical Society of America.
Wide-band fiber-optic tunable filter
(2006-12-26)
Chi
;
Sien
;
Chen
;
Nan-Kuang
;
Tseng
A wide-band fiber-optic tunable filter is provided. Dispersive polymers with different dispersion characteristics and side-polished fibers are used to fabricate wide-band tunable band-pass filters, band-rejection filters, short-wavelength-pass filters or long-wavelength-pass filters. This kind of wide-band fiber-optic tunable fiber filters is able to be used in the applications of fiber-to-the-home (FTTH) system networks. It is also able to be used in the applications of sensitive temperature sensors, high-resolution fiber refractometers, gain-flattened filters, fiber modal filters and fiber mode-field expanders/condensers.
Syntheses and the study of strongly hydrogen-bonded poly(vinylphenol-b-vinylpyridine) diblock copolymer through anionic polymerization
(2006-12-26)
Kuo, Shiao-Wei
;
Tung, Pao-Hsiang
;
Chang, Feng-Chih
;
應用化學系
;
Department of Applied Chemistry
A series of poly(vinylphenol-b-vinylpyridine) (PVPh-b-P4VP) block copolymers were prepared through anionic polymerizations of 4-tert-butoxystyrene with 4-vinylpyridine followed by subsequent selective hydrolysis of the 4-tert-butoxystyrene protective groups. Infrared spectrum analysis suggests that this block copolymer possesses strong hydrogen-bonding interaction between the hydroxyl group of PVPh and the pyridine group of P4VP. DSC analyses indicate that these PVPh-b-P4VP copolymers always have higher glass transition temperatures than the corresponding PVPh/P4VP miscible blends obtained from DMF solution. However, the thermal behavior of PVPh-b-P4VP diblock copolymer shows a similar T-g value with the PVPh/P4VP blend complex obtained from methanol solution at a 1:1 (PVPh:P4VP) molar ratio. We proposed that the polymer chain behavior of the PVPh/P4VP blend from DMF solution is separated coils. However, by increasing the hydrogen bonding for PVPh-b-P4VP diblock copolymer, a polymer complex aggregate is proposed, which is similar to the PVPh/P4VP blend complex from methanol solution. The spin-lattice relaxation time in the rotating frame (T-1 rho(H)) based on solid-state NMR analysis is able to provide positive evidence that the polymer complex aggregate in the diblock copolymer has a shorter T-1 rho(H) value than the separated coils in the miscible blend.
alpha-labeling number of trees
(2006-12-28)
Shiue, Chin-Lin
;
Fu, Hung-Lin
;
應用數學系
;
Department of Applied Mathematics
In this paper, we prove that the alpha-labeling number of trees T, T-alpha <= [r/2] n where n = vertical bar E(T)vertical bar and r is the radius of T. This improves the known result T-alpha <= e(O(root nlogn)) tremendously and this upper bound is very close to the upper bound T-alpha <= n conjectured by Snevily. Moreover, we prove that a tree with n edges and radius r decomposes K-1 for some t <= (r + 1)n(2) + 1. (c) 2006 Elsevier B.V. All rights reserved.
Cu-metalized compound semiconductor device
(2006-12-28)
Chang, Edward Yi
;
Chang, Shang-Wen
;
Lee, Cheng-Shih
The present invention is a compound semiconductor device characterized in that it is Cu-metalized to improved the reliability of the device and to greatly reduce the cost of production.
Influence of the threading dislocations on the electrical properties in epitaxial ZnO thin films
(2006-12-29)
Liu, W. -R.
;
Hsieh, W. F.
;
Hsu, C. -H.
;
Liang, K. S.
;
Chien, F. S. -S.
The structural and electrical properties of epitaxial ZnO films grown by pulsed-laser deposition on sapphire (0001) were investigated by high-resolution X-ray diffraction (XRD), atomic force microscopy (AFM), scanning capacitance microscopy (SCM), conductive atomic force microscopy (C-AFM), and transmission electron microscopy (TEM). The results of XRD and AFM revealed that the ZnO films have a columnar-grain structure consisting of epitaxial cores surrounded by annular boundaries. The core and boundary regions exhibited significantly different capacitive responses and field emission current. The results of TEM indicated that the annular boundaries have high-density edge threading dislocations. The shift of flatband voltage and the raise of potential barrier at the boundaries observed by SCM and C-AFM were attributed to the interface trap densities caused by the existence of high-density edge threading dislocations. (c) 2006 Elsevier B.V. All rights reserved.
Effects of hole injection layer thickness on the luminescent properties of white organic light-emitting diodes
(2006-12-30)
Li, Jian-Feng
;
Chen, Shih-Fang
;
Su, Shui-Hsiang
;
Hwang, Kao-Shing
;
Yokoyama, Meiso
This work investigates how the thickness of the hole injection layer (HIL) influences the luminescent characteristics of white organic light-emitting diodes (WOLED). Experimental results indicate that inserting a thin HIL (< 200 angstrom) into a WOLED without an HIL reduces the brightness and clearly changes the chromaticity because the surface of the 4,4',4"-tris{N,-(3-methylphenyl)-N-phenylamino}-triphenylamine) (m-MTDATA) film is extremely rough. In contrast, a dense film structure and the fine surface morphology of m-MTDATA of moderate thickness (350-650 angstrom) provides a uniform conducting path on which holes cross the indium tin oxide (ITO)/HIL interface, improving luminescent performance, associated with the relatively stable purity of the color of the emission, with Commission Internationale 1'Eclairage (CIE) coordinates of (x = 0.40, y = 0.40). However, inserting a thick HIL (> 650 angstrom) reduces the luminescent performance and causes red-shift, because the holes and electrons in the effective emissive confinement region become less optimally balanced. Moreover, optimizing the device structure enables a bright WOLED with CIE coordinates of (x = 0.34, y = 0.33) to reach a luminance of 7685 cd/m(2) at a current density of 100 mA/cm(2), with a maximum luminous efficiency of 1.72 Im/W at 5.5 V. (c) 2006 Elsevier B.V. All rights reserved.
For our sister Xiou Qin
(Routledge, 2007)
J. Ho
Regulatory knowledge management for semiconductor manufacturing in China
(2007)
Trappey, Charles V.
;
Tseng, Ai-Hua
;
管理科學系
;
Department of Management Science
There is a growing need to create trade data and regulatory information systems for manufacturers building new facilities in emerging world markets. These multinational companies must track world trade organization (WTO) rules as well as the domestic rules of operation. A semiconductor manufacturer must carefully monitor and take quick action on regulatory matters. The need for trade and market information and systems is now an integral part of global manufacturing. Without systems to monitor and process the every changing flow of rules and regulations, managers and engineers are less effective in preventing violations or arguing for changes. After China's accession to WTO, there has been remarkable growth in domestic regulations for the manufacture of electronic goods. Likewise, since electronic goods and components are of strategic importance to many of the worlds leading manufacturers, the rule base has become a multi-lingual and evolving collection that is extremely difficult to monitor or even effectively report about. The objective of this research is to study the management of a sub-set of the trade related data and develop a prototype information system for processing and managing trade regulations. A case analysis of the application in industry is provided.
A fast failure detection and failover scheme for SIP high availability networks
(2007)
Wu, Wei-Ming
;
Wang, Kuochen
;
Jan, Rong-Hong
;
Huang, Chia-Yuan
;
資訊工程學系
The SIP proxy server, which is an important building block of a SIP network, can be in a form of a cluster to prevent service unavailability caused by software or hardware failures. The design of a SIP proxy server cluster with a single dispatcher in a SIP network faces the single-point-of-failure problem. The use of dual SIP dispatcher architecture was proposed and VRRP (Virtual Router Redundancy Protocol) was used as an JP failover mechanism. In this paper, we have designed and implemented a dependable SIP network that includes n + k SIP dispatchers (n active dispatchers + k backup dispatchers) to control and monitor a cluster of m SIP proxy servers for VoIP and video conferencing applications. A fast failure detection and failover (FFF) scheme has also been proposed. FFF uses OpenAIS as a high availability middleware to perform health check and failover of dispatchers and proxy servers. Experimental results have shown that the FFF scheme reduces the dispatcher failover time by 80% compared to the VRRP mechanism and also shorten the proxy failover time by 85% compared to the mechanism provided by OpenSER itself
軌道運輸路網系統安全評估與可靠度模式之研究
(2007)
張新立
;
CHANG HSIN-LI
;
國立交通大學運輸科技與管理學系(所)
近年來政府致力於推動高鐵及各縣市捷運等軌道運輸系統建設，在面對高速鐵路即將通車之時，「運輸路網安全性」為軌道運輸安全工作之第一要務。然而由於影響路網營運安全之因素甚多且深具不確定性，軌道運輸經營者往往無法對路網之運輸能力及潛藏之風險狀態具有足夠之瞭解與掌握。過去之研究大都將這些不確定性之因素與風險以明確之參數加以計算，導致所計算出來之風險值與真實風險狀態有所落差。有鑑於此，本研究嘗試透過軌道運輸路網安全成因與特性之分析，參考不確定數學中之「未確知有理數」概念及運算，並以「未確知有理數」之概念建構軌道運輸系統路網之安全因素評估模式，分析路網發生不同事故之風險分佈狀態，期能更有效描繪較符合決策需要之路網風險分佈狀態，並評估不同路網或路段設計對系統營運可靠度之影響。本研究最後將以台灣鐵路管理局之路網進行實證之研究，透過台鐵相關專業員工之調查，收集所需之資料與數據進行模式之應用分析，以提供台鐵營運者與決策者參考，藉以提昇軌道運輸系統整體之安全與營運效率。
DC-DC intelligent power regulator design using wavelet neural network
(2007)
Hsu, Chun-Fei
;
Lee, Tsu-Tian
;
Hung, Kun-Neng
;
電機學院
;
College of Electrical and Computer Engineering
DC-DC power converters are the! devices which can convert a certain electrical voltage to another level of electrical voltage by switching action. This paper proposes a wavelet neural network control (WNNC) system for the DC-DC power converters. The WNNC system is comprised of a neural controller and a robust controller. The neural controller is used to mimic an ideal controller and the robust controller is designed to achieve L-2 tracking performance with desired attenuation level. Finally, some experimental results are provided to demonstrate the proposed WNNC system can track the output reference voltage variations and cope with the load resistance variations to ensure the stability while providing fast transient response.
後殖民想像與第三世界╱視界：拉美族裔認同及跨文化劇場
(2007)
張靄珠
;
Chang Ivy I-Chu
;
國立交通大學外國語文學系
本研究計畫乃是三年期的計畫，重點在於研究美國的拉美裔劇場，如何藉由跨文化劇場表演，迎／拒美國白人主流社會對拉美裔的熱帶想像形塑(tropicalization)，凝聚族裔認同，並在種族、性別、與階級的交界，再現拉美裔主體流離越界的歷史記憶、慾望、與創傷；在內外異同之間（拉美裔和白人主流社會之間，拉美裔族群內部），和美國國家機器與資本主義商業機制之間，往復協商，再現拉美主體，爭取公民權，重新形塑第三世界／視界。本計畫主旨如下：第一年：「文化國族主義，與拉美劇場運動」；第二年：「第三世界女性主義，文化混雜，與拉美劇場」；第三年：「泛拉美認同，重塑熱帶想像，與越界表演」。本研究將從三個方向進行：一、從拉美裔移民歷史文化情境的演變，以及拉美認同論述的發展，來探討不同時期的拉美劇場，如何以不同的再現策略與美學，和外在的歷史文化情境與認同論述相互影響。由於拉美裔社群乃是多元族裔，其文化血緣廣及拉丁美洲與加勒比海諸國，本研究擬採拉美表演研究學者Diana Taylor 的觀點，與其視拉美集體認同源自同一歷史的族群，毋寧視其為源自共同抵拒殖民者的歷史（美國是最強亦是最終的殖民者）(Diana Taylor, 1994:9)。這些背負母國多重殖民歷史經驗的拉美裔移民或非法移民，輾轉流離於美國都會底層或邊緣，可說是「內在於第一世界的第三世界」。其矛盾錯綜的處境，挑戰著既有的殖民與後殖民論述，也挑戰著原有的第一世界／第三世界，殖民者／被殖民者的二元劃分，而透過劇本以及劇場文化生態研究，可探索其文化特殊性及歷史物質情境，此乃為既有後殖民論述不足之處。二、從劇場史的角度，探討不同時期的拉美劇場美學及再現策略。拉美劇場的脈絡可說是百川匯流：其政治基進性可溯源於六零年代中南美洲及美國本土的政治劇場；其雜化越界的再現策略及美學則植基於「邊境藝術」(border art)(Guillermo Gomez-Pena, 1993: 52)，「雜化越界」(mestiza)(Gloria Anzaldua,1987: 84-85)，以及「過渡轉化」 (nepantla) (Gloria Anzaldua, 1993: 39)概念。而其劇場意象則兼容拉丁美洲民俗宗教、神話、歷史，或是諧擬反諷美國通俗文化對拉美熱帶風情，及原始情調的刻板形象。此外，拉美裔劇場亦會挪用歐美前衛劇場，布萊希特劇場的技巧，或是採取 1960 年代以降的熱帶主義文化運動(tropicalism)之美學實驗精神，混雜了諧倣人類學(anthropopagy)、融雜主義(syncretism)、類型揉雜(hybridization of genres)、垃圾藝術(trash art)，以及影者拼貼(Jeepney audio-visual bricolage)等藝術形式。三、從跨文化表演的角度，研究拉美戲劇創作及演出所涉及的文化移轉、交換、混雜、內在外在結構，以及權力關係。並藉由實例的研究反思既有的跨文化表演理論，試圖由此建構更有效的跨文化表演理論模式。
Broadly tunable mW level UV light generated by intracavity SFG in a compact high-Q PPMgSLT OPO
(2007)
Tu, Shih-Yu
;
Kung, A. H.
;
Kurimura, Sunao
;
Kitamura, Kenji
;
Ikegami, Takeshi
A compact multi-kHz UV source tunable from 363nm to 378nm is realized by intracavity SFG in a PPMgSLT OPO. Phase-matched peaks at 334nm and 370nm are observed. A full tuning range of similar to 58nm is predicted. (C) 2007 Optical Society of America
‘Somewhere over the rainbow’: global projections/local allusions in Tears of the Black Tiger/Fa thalai jone
(Routledge, 2007)
R. Harrison
具高畫質、低功率與人因優化之LCD面板及光源系統研究---總計畫
(2007)
謝漢萍
;
SHIEH HAN-PING DAVID
;
國立交通大學光電工程學系(所)
次世代的顯示面板將以呈現高畫質與最接近自然的影像品質於人類視覺系統中，並可同時兼顧節省能源、減少基材的環保需求；因此次世代顯示面板將必須具有高動態顯示範圍(高亮度，高對比度)，廣色域顯示能力(高色彩飽和度)，高清晰動態影像，高精細畫質，以及低功率消耗等特點；為了實現這樣的次世代顯示技術，便需高整合性地結合人眼視覺模型與雙面板顯示系統(液晶顯示面板+背光顯示系統)的先進技術，始能完成。本計畫結合上述三個領域，整體性地研究最接近自然界的人眼視覺系統模型，以此模型應用於整合液晶與背光顯示系統之次世代顯示驅動演算法，並提出演算法最佳化之系統數學架構；根據開發之架構設計出高亮度、廣色域、高解析、低耗電及輕薄之次世代顯示面板前瞻技術。