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Item type:Item, Influence of the threading dislocations on the electrical properties in epitaxial ZnO thin films(2006-12-29) ;Liu, W. -R. ;Hsieh, W. F. ;Hsu, C. -H. ;Liang, K. S.Chien, F. S. -S.The structural and electrical properties of epitaxial ZnO films grown by pulsed-laser deposition on sapphire (0001) were investigated by high-resolution X-ray diffraction (XRD), atomic force microscopy (AFM), scanning capacitance microscopy (SCM), conductive atomic force microscopy (C-AFM), and transmission electron microscopy (TEM). The results of XRD and AFM revealed that the ZnO films have a columnar-grain structure consisting of epitaxial cores surrounded by annular boundaries. The core and boundary regions exhibited significantly different capacitive responses and field emission current. The results of TEM indicated that the annular boundaries have high-density edge threading dislocations. The shift of flatband voltage and the raise of potential barrier at the boundaries observed by SCM and C-AFM were attributed to the interface trap densities caused by the existence of high-density edge threading dislocations. (c) 2006 Elsevier B.V. All rights reserved.Item type:Item, Effects of hole injection layer thickness on the luminescent properties of white organic light-emitting diodes(2006-12-30) ;Li, Jian-Feng ;Chen, Shih-Fang ;Su, Shui-Hsiang ;Hwang, Kao-ShingYokoyama, MeisoThis work investigates how the thickness of the hole injection layer (HIL) influences the luminescent characteristics of white organic light-emitting diodes (WOLED). Experimental results indicate that inserting a thin HIL (< 200 angstrom) into a WOLED without an HIL reduces the brightness and clearly changes the chromaticity because the surface of the 4,4',4"-tris{N,-(3-methylphenyl)-N-phenylamino}-triphenylamine) (m-MTDATA) film is extremely rough. In contrast, a dense film structure and the fine surface morphology of m-MTDATA of moderate thickness (350-650 angstrom) provides a uniform conducting path on which holes cross the indium tin oxide (ITO)/HIL interface, improving luminescent performance, associated with the relatively stable purity of the color of the emission, with Commission Internationale 1'Eclairage (CIE) coordinates of (x = 0.40, y = 0.40). However, inserting a thick HIL (> 650 angstrom) reduces the luminescent performance and causes red-shift, because the holes and electrons in the effective emissive confinement region become less optimally balanced. Moreover, optimizing the device structure enables a bright WOLED with CIE coordinates of (x = 0.34, y = 0.33) to reach a luminance of 7685 cd/m(2) at a current density of 100 mA/cm(2), with a maximum luminous efficiency of 1.72 Im/W at 5.5 V. (c) 2006 Elsevier B.V. All rights reserved.Item type:Item, For our sister Xiou Qin(Routledge, 2007)J. HoItem type:Item, Regulatory knowledge management for semiconductor manufacturing in China(2007) ;Trappey, Charles V. ;Tseng, Ai-Hua ;管理科學系Department of Management ScienceThere is a growing need to create trade data and regulatory information systems for manufacturers building new facilities in emerging world markets. These multinational companies must track world trade organization (WTO) rules as well as the domestic rules of operation. A semiconductor manufacturer must carefully monitor and take quick action on regulatory matters. The need for trade and market information and systems is now an integral part of global manufacturing. Without systems to monitor and process the every changing flow of rules and regulations, managers and engineers are less effective in preventing violations or arguing for changes. After China's accession to WTO, there has been remarkable growth in domestic regulations for the manufacture of electronic goods. Likewise, since electronic goods and components are of strategic importance to many of the worlds leading manufacturers, the rule base has become a multi-lingual and evolving collection that is extremely difficult to monitor or even effectively report about. The objective of this research is to study the management of a sub-set of the trade related data and develop a prototype information system for processing and managing trade regulations. A case analysis of the application in industry is provided.Item type:Item, A fast failure detection and failover scheme for SIP high availability networks(2007) ;Wu, Wei-Ming ;Wang, Kuochen ;Jan, Rong-Hong ;Huang, Chia-Yuan資訊工程學系The SIP proxy server, which is an important building block of a SIP network, can be in a form of a cluster to prevent service unavailability caused by software or hardware failures. The design of a SIP proxy server cluster with a single dispatcher in a SIP network faces the single-point-of-failure problem. The use of dual SIP dispatcher architecture was proposed and VRRP (Virtual Router Redundancy Protocol) was used as an JP failover mechanism. In this paper, we have designed and implemented a dependable SIP network that includes n + k SIP dispatchers (n active dispatchers + k backup dispatchers) to control and monitor a cluster of m SIP proxy servers for VoIP and video conferencing applications. A fast failure detection and failover (FFF) scheme has also been proposed. FFF uses OpenAIS as a high availability middleware to perform health check and failover of dispatchers and proxy servers. Experimental results have shown that the FFF scheme reduces the dispatcher failover time by 80% compared to the VRRP mechanism and also shorten the proxy failover time by 85% compared to the mechanism provided by OpenSER itselfItem type:Item, 軌道運輸路網系統安全評估與可靠度模式之研究(2007) ;張新立 ;CHANG HSIN-LI國立交通大學運輸科技與管理學系(所)近年來政府致力於推動高鐵及各縣市捷運等軌道運輸系統建設,在面對高速鐵路即將通車之時,「運輸路網安全性」為軌道運輸安全工作之第一要務。然而由於影響路網營運安全之因素甚多且深具不確定性,軌道運輸經營者往往無法對路網之運輸能力及潛藏之風險狀態具有足夠之瞭解與掌握。過去之研究大都將這些不確定性之因素與風險以明確之參數加以計算,導致所計算出來之風險值與真實風險狀態有所落差。有鑑於此,本研究嘗試透過軌道運輸路網安全成因與特性之分析,參考不確定數學中之「未確知有理數」概念及運算,並以「未確知有理數」之概念建構軌道運輸系統路網之安全因素評估模式,分析路網發生不同事故之風險分佈狀態,期能更有效描繪較符合決策需要之路網風險分佈狀態,並評估不同路網或路段設計對系統營運可靠度之影響。本研究最後將以台灣鐵路管理局之路網進行實證之研究,透過台鐵相關專業員工之調查,收集所需之資料與數據進行模式之應用分析,以提供台鐵營運者與決策者參考,藉以提昇軌道運輸系統整體之安全與營運效率。Item type:Item, DC-DC intelligent power regulator design using wavelet neural network(2007) ;Hsu, Chun-Fei ;Lee, Tsu-Tian ;Hung, Kun-Neng ;電機學院College of Electrical and Computer EngineeringDC-DC power converters are the! devices which can convert a certain electrical voltage to another level of electrical voltage by switching action. This paper proposes a wavelet neural network control (WNNC) system for the DC-DC power converters. The WNNC system is comprised of a neural controller and a robust controller. The neural controller is used to mimic an ideal controller and the robust controller is designed to achieve L-2 tracking performance with desired attenuation level. Finally, some experimental results are provided to demonstrate the proposed WNNC system can track the output reference voltage variations and cope with the load resistance variations to ensure the stability while providing fast transient response.Item type:Item, 後殖民想像與第三世界╱視界:拉美族裔認同及跨文化劇場(2007) ;張靄珠 ;Chang Ivy I-Chu國立交通大學外國語文學系本研究計畫乃是三年期的計畫,重點在於研究美國的拉美裔劇場,如何藉由跨文化 劇場表演,迎/拒美國白人主流社會對拉美裔的熱帶想像形塑(tropicalization),凝聚族 裔認同,並在種族、性別、與階級的交界,再現拉美裔主體流離越界的歷史記憶、慾望、 與創傷;在內外異同之間(拉美裔和白人主流社會之間,拉美裔族群內部),和美國國 家機器與資本主義商業機制之間,往復協商,再現拉美主體,爭取公民權,重新形塑第 三世界/視界。本計畫主旨如下:第一年:「文化國族主義,與拉美劇場運動」;第二年: 「第三世界女性主義,文化混雜,與拉美劇場」;第三年:「泛拉美認同,重塑熱帶想像, 與越界表演」。 本研究將從三個方向進行: 一、從拉美裔移民歷史文化情境的演變,以及拉美認同論述的發展,來探討不同時期的 拉美劇場,如何以不同的再現策略與美學,和外在的歷史文化情境與認同論述相互 影響。由於拉美裔社群乃是多元族裔,其文化血緣廣及拉丁美洲與加勒比海諸國, 本研究擬採拉美表演研究學者Diana Taylor 的觀點,與其視拉美集體認同源自同一 歷史的族群,毋寧視其為源自共同抵拒殖民者的歷史(美國是最強亦是最終的殖民 者)(Diana Taylor, 1994:9)。這些背負母國多重殖民歷史經驗的拉美裔移民或非法移 民,輾轉流離於美國都會底層或邊緣,可說是「內在於第一世界的第三世界」。其 矛盾錯綜的處境,挑戰著既有的殖民與後殖民論述,也挑戰著原有的第一世界/第 三世界,殖民者/被殖民者的二元劃分,而透過劇本以及劇場文化生態研究,可探 索其文化特殊性及歷史物質情境,此乃為既有後殖民論述不足之處。 二、從劇場史的角度,探討不同時期的拉美劇場美學及再現策略。拉美劇場的脈絡可說 是百川匯流:其政治基進性可溯源於六零年代中南美洲及美國本土的政治劇場;其 雜化越界的再現策略及美學則植基於「邊境藝術」(border art)(Guillermo Gomez-Pena, 1993: 52),「雜化越界」(mestiza)(Gloria Anzaldua,1987: 84-85),以及「過渡轉化」 (nepantla) (Gloria Anzaldua, 1993: 39)概念。而其劇場意象則兼容拉丁美洲民俗宗 教、神話、歷史,或是諧擬反諷美國通俗文化對拉美熱帶風情,及原始情調的刻板 形象。此外,拉美裔劇場亦會挪用歐美前衛劇場,布萊希特劇場的技巧,或是採取 1960 年代以降的熱帶主義文化運動(tropicalism)之美學實驗精神,混雜了諧倣人類 學(anthropopagy)、融雜主義(syncretism)、類型揉雜(hybridization of genres)、垃圾藝 術(trash art),以及影者拼貼(Jeepney audio-visual bricolage)等藝術形式。 三、從跨文化表演的角度,研究拉美戲劇創作及演出所涉及的文化移轉、交換、混雜、 內在外在結構,以及權力關係。並藉由實例的研究反思既有的跨文化表演理論,試 圖由此建構更有效的跨文化表演理論模式。Item type:Item, Broadly tunable mW level UV light generated by intracavity SFG in a compact high-Q PPMgSLT OPO(2007) ;Tu, Shih-Yu ;Kung, A. H. ;Kurimura, Sunao ;Kitamura, KenjiIkegami, TakeshiA compact multi-kHz UV source tunable from 363nm to 378nm is realized by intracavity SFG in a PPMgSLT OPO. Phase-matched peaks at 334nm and 370nm are observed. A full tuning range of similar to 58nm is predicted. (C) 2007 Optical Society of AmericaItem type:Item, ‘Somewhere over the rainbow’: global projections/local allusions in Tears of the Black Tiger/Fa thalai jone(Routledge, 2007)R. HarrisonItem type:Item, 具高畫質、低功率與人因優化之LCD面板及光源系統研究---總計畫(2007) ;謝漢萍 ;SHIEH HAN-PING DAVID國立交通大學光電工程學系(所)次世代的顯示面板將以呈現高畫質與最接近自然的影像品質於人類視 覺系統中,並可同時兼顧節省能源、減少基材的環保需求;因此次世代顯 示面板將必須具有高動態顯示範圍(高亮度,高對比度),廣色域顯示能力(高 色彩飽和度),高清晰動態影像,高精細畫質,以及低功率消耗等特點;為 了實現這樣的次世代顯示技術,便需高整合性地結合人眼視覺模型與雙面 板顯示系統(液晶顯示面板+背光顯示系統)的先進技術,始能完成。本計畫 結合上述三個領域,整體性地研究最接近自然界的人眼視覺系統模型,以 此模型應用於整合液晶與背光顯示系統之次世代顯示驅動演算法,並提出 演算法最佳化之系統數學架構;根據開發之架構設計出高亮度、廣色域、 高解析、低耗電及輕薄之次世代顯示面板前瞻技術。Item type:Item, 一個網路電話監聽機制之研究(2007) ;羅濟群 ;LO CHI-CHUN國立交通大學資訊管理研究所由於網際網路技術的成熟,使得網路電話來相互溝通成為可能。使用多樣的網路電話來提供大量的通話需求服務,無論在成本與管理的考量上都具備優勢;然而由於目前的網路電話受限於法令的規範,因此即使提供很好的網路電話,也將受到號碼是否發放所影響,而如何因應此網路電話技術上的限制,提供良好的監察方式給政府機關部門,也將是現行網路電話技術中重要且急待解決的課題。 在網路電話的相關研究,本計畫以國內外相關電信產業發展為研究基礎,並針對相關文獻進行整理與比較,提出適合的監聽方式與環境建構方式。在本計畫的研究中,我們將針對網路電話平台的建立、使用、撥打機制進行分析實作,預期於進行整體性的研究與探討。首先針對建立網路電話的平台,包括網路電話的伺服器與環境;接著則是針對網路電話的監聽架構與模式等相關主題做深入的研究與探討;實作相關軟體來驗證這些機制或模式的效能與有效性,最後將研究結果整理歸納後,提出發展網路電話監察機制時,相關的考量與建議。Item type:Item, Image classification and indexing by EM based multiple-instance learning(2007) ;Pao, H. T. ;Xu, Y. Y. ;Chuang, S. C. ;Fu, H. C.管理科學系In this paper, we propose an EM based Multiple-Instance learning algorithm for the image classification and indexing. To learn a desired image class, a set of exemplar images are selected by a user. Each example is labeled as conceptual related (positive) or conceptual unrelated (negative) image. A positive image consists of at least one user interested object, and a negative example should not contain any user interested object. By using the proposed learning algorithm, an image classification system can learn the user's preferred image class from the positive and negative examples. We have built a prototype system to retrieve user desired images. The experimental results show that for only a few times of relearning, a user can use the prototype system to retrieve favor images from the WWW over Internet.Item type:Item, An eigren-based TEQ design for VDSL systems(2007-01-01) ;Lin, Yuan-Pei ;Liang, Li-Han ;Chung, Pei-Ju ;Phoong, See-May電信工程研究所In this paper, we propose an eigen-based semiblind time-domain equalizer (TEQ) design method for VDSL systems. We exploit the fact that the VDSL system is frequency-division duplexing and maximize signal-to-interference ratio in the frequency domain. Unlike earlier eigen-based TEQ designs, the proposed method does not require the channel impulse response nor channel noise statistics. Using properties of the training symbols in VDSL initialization, the TEQ can be obtained by computing an eigenvector of a positive definite matrix that depends only on the averaged received VDSL symbols. The proposed method is referred to as semiblind, as properties of the training symbols are used but the channel impulse response is not known. Examples will be given to demonstrate that the proposed TEQ design method can effectively shorten the channel impulse response and achieve very good bit rates with only a small number of training symbols.Item type:Item, 光電奈米材料與結構中激子之控制(2007) ;謝文峰 ;HSIEH WEN-FENG國立交通大學光電工程學系(所)現代光子學研究的核心問題之ㄧ是控制光子與物質的交互作用。在過去十年間,為 了改進功能性量子光電子元件,電子狀態密度和局部的光子狀態密度(LDOS)的提升,已 經被利用來提高電子與光子之交互作用。尤其是將量子點 (QDs) 嵌入光子晶體 (photonic crystal, PhCs),提升LDOS 來增強電子 ─光子交互作用,以便作為單光子 源;相反地,在一個減少的LDOS 環境裡,降低電子 ─光子交互作用也是可能的。PhC 是一種週期性交替折射率的結構,因為有可控制且很高的LDOS,是一個接近理想的實驗 平臺來研究增強與抑制電子 ─光子交互作用。相較於量子點在一個均ㄧ的媒介中,光 子晶體的能帶結構的 LDOS 可以調製嵌入的量子點電子 ─光子交互作用。 氧化鋅(ZnO)是屬於寬能隙的Ⅱ-Ⅵ半導體,室溫時它的能隙約為3.37eV;而且具有 相當大的激子束縛能(60meV,優於GaN 的25 meV),因此在室溫下氧化鋅的螢光幾乎是 由激子所決定。另外ZnO 還有對高能量輻射忍受和穩定性及易濕化學法蝕刻,適合於太 空上之應用及可製作成小尺寸元件。而ZnO 奈米結構近年來已被應用在生物醫學、太陽 能電池、發光元件及光觸媒等領域。因此氧化鋅奈米結構是極佳的材料用來開發單光子 源、極化子雷射、太陽能轉換、和生醫感測等。 因為在ZnO 中有大激子束縛能和強電子-聲子藕合之優點,本三年計劃將逐一購置 單光子源偵測系統、叢集電腦(含第一原理計算軟體)和原子層沉積系統,用以完成單光 子源系統的建立、ZnO 量子點的理論計算及PhC 的成長來研究單光子發光和高溫凝態 Bose-Einstein Condensate;研究CuO 和Cu2O 之carrier multiplication 之行為,來 探討以ZnO(intrinsic n-type)奈米柱和CuO/Cu2O(intrinsic p-type)量子點製成全固 態太陽能電池之可行性,並研究其載子轉換之動態機制;以及ZnO 奈米材料與DNA 之表 面鍵結形成之表面態能階導致之發光機制。瞭解氧化鋅量子點UV PL 的發光機制及量子 點崁入光子晶體的動力學行之基礎科學研究對發展及未來應用在光電產業上。Item type:Item, The impact of N-drift implant on ESD robustness of high-voltage NMOS with embedded SCR structure in 40-V CMOS process(2007) ;Chang, Wei-Jen ;Ker, Ming-Dou ;Lai, Tai-Xiang ;Tang, Tien-HaoSu, Kuan-ChengThe ESD robustness on different device structures and layout parameters of high-voltage (HV) NMOS has been investigated in 40-V CMOS process with silicon verification. It was demonstrated, that a specific structure of HV n-type silicon controlled rectifier (HVNSCR) embedded into HV NMOS without N-drift implant in the drain region has the best ESD robustness. Moreover, due to the different current distributions in HV NMOS and HVNSCR, the trends of the TLP-measured It2 under different spacings from the drain diffusion to polygate are different.Item type:Item, 碳摻雜矽奈米線全包覆式閘極元件技術研究(2007) ;崔秉鉞 ;Tsui Bing-Yue國立交通大學電子工程學系及電子研究所本計畫主要目標是開發高性能的全包覆閘極(GAA)元件,並對GAA元件的傳導與可 靠度進行分析。為製作GAA元件,必須先開發矽奈米線製作技術,以及奈米線接面、奈 米線金屬矽化物等技術。由於奈米線元件的接觸面積極小,接觸阻抗對元件性能影響至 鉅,本計畫考慮利用碳摻雜減緩雜質擴散以製作淺接面並減少植入缺陷,也利用碳摻雜 產生的伸張應力,縮小能隙,期能降低接觸阻抗。本計畫擬進一步結合鍺摻雜,使能隙 更有效縮小,並提高載子活化率,得到更低的接觸阻抗。因此,第一年度將進行碳植入 對晶格應力的研究,也探討碳植入以及鍺植入對雜質擴散、淺接面特性、接觸阻抗的影 響。於第二年度開發10nm以下的矽奈米線製作技術,探討金屬矽化物奈米線的反應機 制,以及碳摻雜和鍺摻雜對奈米線接面特性以及接觸阻抗的影響。第二年度也將整合各 製程模組,製作具有高介電常數介電質、金屬閘極、金屬矽化物源極/汲極的GAA元件。 第三年度則著力於GAA元件的基本特性、載子遷移、電流傳導分析,並進行可靠度評估。Item type:Item, SiGe HBT Gilbert downconverter with an integrated miniaturized Marchand balun for UWB applications(2007) ;Tseng, Sheng-Che ;Meng, Chinchun ;Chang, Chia-Hung ;Huang, Guo-Wei電信工程研究所A 15.5-dB conversion gain 0.35-mu m SiGe HBT Gilbert mixer with the lumped-element Marchand balun for 3.1 GHz to 10.6 GHz UWB applications is implemented using standard silicon processes. This mixer has the 1.5-GHz IF 3-dB bandwidth as well as the 15.8-dB noise figure. The balun size is only 0.25 mm x 0.5 mm. Because of the balanced structure of the Marchand balun, the magnitude imbalance and phase difference of outputs are below 1 dB and about 184 degrees, respectively. In the present of a lossy substrate, the dissipated loss of the balun is still less than 4 dB thanks to the advantage of the lumped-element technique. The total current consumption of the entire mixer is 13.9 mA at 5 V voltage supply while the chip size including probing pads is 1 mm x 0.9 mm.Item type:Item, (親近大師‧人物專訪)系列七(2007-01-01)管管Item type:Item, A low-power current-reuse LNA for ultra-wideband wireless receivers from 3.1 to 10.6 GHz(2007) ;Kao, H. L. ;Chin, Albert ;Chang, K. C. ;McAlister, S. P.交大名義發表We present an ultra-wideband 3.1-10.6 GHz low-noise amplifier which uses a two-stage current-reuse structure to reduce the power. Fabricated in a 0.18 mu m CMOS process, the IC prototype achieved a power gain of 9.3 dB, a noise figure (NF) of < 5.6 dB, an input match of < -8 dB over the band, while consuming only 9.4 mW.