Browsing by Issue Date, starting with "2007-03-16"
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Item type:Item, 分離基態模截止可調式光纖放大器與雷射(2007-03-16) ;祁甡陳南光一種使用分離式基態模截止的可調式光纖放大器與雷射,其包含至少一光纖,而該光纖係分別具有一輸入端及一輸出端;以及至少一可間隔地分布於該光纖上以產生基態模截止波長(fundamental-mode cutoff wavelength)之濾波器,藉以形成一光纖放大器;另可於該光纖上設置至少一組共振腔藉以形成一雷射。藉此,可使本發明利用分離式基態模截止(discrete fundamental-mode cutoff)的方法來抑制摻鉺光纖在C頻帶的增益,使得較短波長的S頻帶能夠獲得足夠的光增益使信號放大。Item type:Item, 主動式可調變電流之薄膜電晶體結構(2007-03-16) ;林彥仲 ;黃建智 ;楊佳峰 ;王俊雄謝漢萍本發明係為一主動式可調變電流之薄膜電晶體電路結構,特別是應用在主動式發光元件與其顯示陣列面板的畫素電路。本發明結構包括電流源、資料線、掃描線、直流電壓訊號線、複數儲存電容、複數開關電晶體與一驅動電晶體。其中複數儲存電容形成串聯結構,其功能為畫素電路由開啓期間轉為關閉期間時,其中一儲存電容因負回授效應而使得該等儲存電容間的節點的電位下降,進而使得流經發光元件之電流下降,以實現電流調變功能。複數開關電晶體功能為開關功能,以作為控制該電流源之電流方向。Item type:Item, Impacts of a polycrystalline-silicon buffer layer on the performance and reliability of strained n-channel metal-oxide-semiconductor field-effect transistors with SiN capping(2007-03-19) ;Lu, Ching-Sen ;Lin, Horng-Chih ;Huang, Jian-Ming ;Lee, Yao-Jen電子工程學系及電子研究所Characteristics of n-channel metal-oxide-semiconductor field-effect transistors with SiN capping were investigated in this work. Although the SiN capping could dramatically enhance the carrier mobility and thus the device drive current, the resistance to hot-carrier degradation is compromised as well, owing to the large amount of hydrogen contained in the SiN layer which may diffuse into the channel region during the process. To eliminate this shortcoming, the insertion of an ultrathin (10 nm) polycrystalline-silicon buffer layer between the gate and the SiN capping was proposed and demonstrated to restore the hot-carrier reliability of the devices without compromising the current enhancement due to the SiN capping. (c) 2007 American Institute of Physics.Item type:Item, A pyroelectric infrared biometric system for real-time walker recognition by use of a maximum likelihood principal components estimation (MLPCE) method(2007-03-19) ;Fang, Jian-Shuen ;Hao, Qi ;Brady, David J. ;Guenther, Bob D.Hsu, Ken Y.This paper presents a novel biometric system for real-time walker recognition using a pyroelectric infrared sensor, a Fresnel lens array and signal processing based on the linear regression of sensor signal spectra. In the model training stage, the maximum likelihood principal components estimation ( MLPCE) method is utilized to obtain the regression vector for each registered human subject. Receiver operating characteristic ( ROC) curves are also investigated to select a suitable threshold for maximizing subject recognition rate. The experimental results demonstrate the effectiveness of the proposed pyroelectric sensor system in recognizing registered subjects and rejecting unknown subjects. (c) 2007 Optical Society of America.Item type:Item, Heteroepitaxial growth of sixfold symmetric osmium on Si (111) and Si (100)(2007-03-19) ;Peng, Tai-Yen ;Lo, C. K. ;Yao, Y. D. ;Chen, San-Yuan材料科學與工程學系Growing sixfold symmetric osmium (Os) epitaxial films with suitable buffer layers was developed. Using a Cu buffer layer, the lattice mismatch between Os (0002) and Si (100) was significantly reduced from > 30% to similar to 7% to grow Os films with twin relationships and weak sixfold symmetries. On the other hand, the Cu/Au buffer layer was selected to form a fcc (111) surface mesh on H-Si (111)-1x1, and therefore sixfold symmetric Os films were grown due to the lower lattice mismatch. Such growth properties may be applied in the high density magnetic random access memory manufacturing processes to connect the magnetic tunnel junction growth and Cu metal line directly. (c) 2007 American Institute of Physics.Item type:Item, Nonvolatile polycrystalline silicon thin-film-transistor memory with oxide/nitride/oxide stack gate dielectrics and nanowire channels(2007-03-19) ;Chen, Shih-Ching ;Chang, Ting-Chang ;Liu, Po-Tsun ;Wu, Yung-ChunYeh, Ping-HungIn this work, the authors study a polycrystalline silicon thin-film transistor (poly-Si TFT) with oxide/nitride/oxide (ONO) stack gate dielectrics and multiple nanowire channels for the applications of both nonvolatile silicon-oxide-nitride-oxide-silicon (SONOS) memory and switch transistor. The proposed device named as nanowire SONOS-TFT has superior electrical characteristics of a transistor such as on/off current ratio, threshold voltage (V-th), and subthreshold slope due to the good gate control ability originated from fringing electrical field effects. Moreover, the proposed device under adequate operation scheme can exhibit high program/erase efficiency and good retention time characteristics at high temperature. (c) 2007 American Institute of Physics.Item type:Item, Generation of supercontinuum bottle beam using an axicon(2007-03-19) ;Lin, Ja-Hon ;Wei, Ming-Dar ;Liang, Hui-Hung ;Lin, Kuei-HueiHsieh, Wen-FengA supercontinuum bottle beam was successfully produced by focusing a supercontinuum laser beam after passing through an axicon. The supercontinuum radiation was generated from a microstructured fiber pumped by a self-kerr-lensmode-locked femtosecond Ti: sapphire laser. The cross-section intensity distributions of the generated bottle were recorded by a beam profiler. Using the line filters to select different central wavelengths, the different colors of bottle beams show slightly different bottle ranges and diameters due to the dispersion of axicon and focusing lens. The results consist with the theoretical prediction using the Fresnel-Kirchhoff's formula in considering an incident Gaussian beam. (c) 2007 Optical Society of America.Item type:Item, Time-domain and spectral-domain investigation of inflection-point slow-light modes in photonic crystal coupled waveguides(2007-03-19) ;Huang, Shih-Chieh ;Kato, Masao ;Kuramochi, Eiichi ;Lee, Chien-PingNotomi, MasayaWe report on spectral-domain and time-domain measurements and numerical calculations of group velocities in a photonic crystal coupled waveguide, where the unique guided mode band structure has a flat band region within the photonic band gap allowing for slow light observation. The spectral dependence of group velocity, which is measured by interference method, indicates the existence of slow light modes around the inflection point of the unique flat band, rather than at the band edge. Time-domain observation of optical pulses propagating along two-dimension slab photonic crystal coupled waveguides is also demonstrated by using a high speed oscilloscope. By adjusting the wavelength of the input pulses toward the flat band of the coupled defect modes, an increasing duration time between reference and output pulses are clearly observed. An extremely small group velocity of 0.017c is thus obtained. Calculated group velocities show good agreement with our measured results. (c) 2007 Optical Society of America.Item type:Item, 月亮洗頭(2007-03-20)管管Item type:Item, 月亮洗頭(2007-03-20)管管Item type:Item, Reconfigurable switched- capacitor input circuit with digital-stimulus acceptability for analog tests(2007-03-22)Hong, Hao-ChiaoA reconfigurable switched-capacitor input circuit with digital-stimulus acceptability for analog tests disclosed in the present invention provides the digital input interfaces, which are comprised of capacitors, analog switches and digital circuits, for the usage of testing the mixed-signal circuits. The present invention provides a low-priced testing platform to accomplish the testing of circuits and to solve the problems of high-cost mixed mode tester and of utmost restrictions against the surrounding condition. Therefore, the present invention improves the testability, reduces the test cost, shorten the processes of designation and efficiently seize on the time-to-market.Item type:Item, Facial washer(2007-03-22) ;Sha, Yung-JyeLiao, Wen-ChinA facial washer is disclosed to include a basin, which has a plurality of water outlets symmetrically arranged on the inside wall thereof at two opposite lateral sides, a plurality of adjustable jet nozzles, which are respectively mounted in the water outlets inside the basin for ejecting a respective stream of water, each having a fixed ball socket and a ball valve rotatably supported in the ball socket for guiding water out of the respective water outlet in the form of a stream of water, and a control device for controlling the supply of water to the adjustable jet nozzles.Item type:Item, Phase segregation assisted morphology sculpting: Growth of graphite and silicon crystals via vapor-solid reactions(2007-03-22) ;Huang, Chih-Hao ;Chang, Yu-Hsu ;Lin, Huang-Kai ;Peng, Chih-WeiChung, Wen-ShengCrystalline graphite and Si showing fertile morphologies are prepared via vapor-solid reaction growth (VSRG). By reacting CaC2 with vapors of CxCly (CxCly: CCl4, C2Cl4, C4Cl6, and C5Cl6), porous, fibrous, and planar graphite were obtained at 973-1023, 1073-1123, and 1123-1223 K, respectively. Employing SiCl4 to react with MxSiy (MxSiy: Mg2Si and CaSi2) generated many Si structures. These include clustered-particle and porous, wirelike, corallike, and planar or platelike at 1023, 1073, 1123, and 1223 K, respectively. The reaction products, the network solids (graphite and Si) and the ionic solids MCl2, phase-segregated into self-templating molds and casts and develop cooperatively into various three-dimensional structures. Final morphology of the network solids depends not only on the reaction temperature but their molar volume ratio to the MCl2 salt products.Item type:Item, Method for forming gate pattern for electronic device(2007-03-22) ;Chen, Szu-Hung ;Kuo, Chien-IChang, Edward YiA method for forming a gate pattern for an electronic device, comprising steps of: providing a substrate, whereon a first photo-resist layer is formed; performing a first photo-lithography process so as to form a first pattern with a first width on the substrate; forming a second photo-resist layer, covering the first pattern and the first photo-resist layer on the substrate; and performing a second photo-lithography process, which is shifted from the first photo-lithography process, so as to form a second pattern with a second width on the substrate; wherein the second width is smaller than the first width.Item type:Item, Syntheses and structures of low-coordinate and multiply-bonded M-M complexes(2007-03-25) ;Tsai, Yi-Chou ;Lin, Yang-Miin ;Yu, Jen-Shiang K. ;Hwang, Jenn-Kang生物科技學系Item type:Item, CARB 126-Combinatorial biosynthesis of NDP-deoxysugars and spinosyn glycosides by in vitro recombination of secondary metabolite biosynthetic pathways(2007-03-25) ;Chiu, Hsien-Tai ;Chen, Yi-Lin ;生物科技學系Department of Biological Science and TechnologyItem type:Item, Directly grafts the conjugated polymer to nanoparticle surface synthesis, characterization and application for organic electronic devices(2007-03-25) ;Wang, Hsu-Shen ;Wei, Kung-Hwa ;材料科學與工程學系Department of Materials Science and EngineeringItem type:Item, Tandem enzymatic syntheses of TDP-deoxysugars and spinosyn analogs by in vitro recombination of natural product biosynthetic pathways(2007-03-25) ;Chiu, Hsien-Tai ;Chen, Yi-Lin ;Wu, Chih Chien ;生物科技學系Department of Biological Science and TechnologyItem type:Item, Enhance photocurrent in poly(3-hexylthiophene)/gold nanoparticle composite films by gold surface plasmon resonance(2007-03-25) ;Chiu, Mao-Yuan ;Wei, Kung-Hwa ;材料科學與工程學系Department of Materials Science and EngineeringItem type:Item, Nano-roughening n-side surface of AlGaInP-based LEDs for increasing extraction efficiency(2007-03-25) ;Lee, Y. J. ;Lu, T. C. ;Kuo, H. C. ;Wang, S. C.Hsu, T. C.A chemical wet etching technique is presented to form a nano-roughened surface with triangle-like morphology on n-side-up AlGaInP-based LEDs fabricated by adopting adhesive layer bonding scheme. A simple and commonly used H3PO4-based solution was applied for chemical wet etching. The morphology of nano-roughened surfaces is analyzed by the atomic force microscope (AFM) and significantly related to the enhancement factor of the LED output power. The output power shows 80% increase after optimizing the nano-roughened morphology of n-side surface, as compared to the ordinary flat surface LED. (c) 2006 Elsevier B.V. All rights reserved.