Browsing by Issue Date, starting with "2007-03-19"

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Impacts of a polycrystalline-silicon buffer layer on the performance and reliability of strained n-channel metal-oxide-semiconductor field-effect transistors with SiN capping
(2007-03-19)
Lu, Ching-Sen
;
Lin, Horng-Chih
;
Huang, Jian-Ming
;
Lee, Yao-Jen
;
電子工程學系及電子研究所
Characteristics of n-channel metal-oxide-semiconductor field-effect transistors with SiN capping were investigated in this work. Although the SiN capping could dramatically enhance the carrier mobility and thus the device drive current, the resistance to hot-carrier degradation is compromised as well, owing to the large amount of hydrogen contained in the SiN layer which may diffuse into the channel region during the process. To eliminate this shortcoming, the insertion of an ultrathin (10 nm) polycrystalline-silicon buffer layer between the gate and the SiN capping was proposed and demonstrated to restore the hot-carrier reliability of the devices without compromising the current enhancement due to the SiN capping. (c) 2007 American Institute of Physics.
A pyroelectric infrared biometric system for real-time walker recognition by use of a maximum likelihood principal components estimation (MLPCE) method
(2007-03-19)
Fang, Jian-Shuen
;
Hao, Qi
;
Brady, David J.
;
Guenther, Bob D.
;
Hsu, Ken Y.
This paper presents a novel biometric system for real-time walker recognition using a pyroelectric infrared sensor, a Fresnel lens array and signal processing based on the linear regression of sensor signal spectra. In the model training stage, the maximum likelihood principal components estimation ( MLPCE) method is utilized to obtain the regression vector for each registered human subject. Receiver operating characteristic ( ROC) curves are also investigated to select a suitable threshold for maximizing subject recognition rate. The experimental results demonstrate the effectiveness of the proposed pyroelectric sensor system in recognizing registered subjects and rejecting unknown subjects. (c) 2007 Optical Society of America.
Heteroepitaxial growth of sixfold symmetric osmium on Si (111) and Si (100)
(2007-03-19)
Peng, Tai-Yen
;
Lo, C. K.
;
Yao, Y. D.
;
Chen, San-Yuan
;
材料科學與工程學系
Growing sixfold symmetric osmium (Os) epitaxial films with suitable buffer layers was developed. Using a Cu buffer layer, the lattice mismatch between Os (0002) and Si (100) was significantly reduced from > 30% to similar to 7% to grow Os films with twin relationships and weak sixfold symmetries. On the other hand, the Cu/Au buffer layer was selected to form a fcc (111) surface mesh on H-Si (111)-1x1, and therefore sixfold symmetric Os films were grown due to the lower lattice mismatch. Such growth properties may be applied in the high density magnetic random access memory manufacturing processes to connect the magnetic tunnel junction growth and Cu metal line directly. (c) 2007 American Institute of Physics.
Nonvolatile polycrystalline silicon thin-film-transistor memory with oxide/nitride/oxide stack gate dielectrics and nanowire channels
(2007-03-19)
Chen, Shih-Ching
;
Chang, Ting-Chang
;
Liu, Po-Tsun
;
Wu, Yung-Chun
;
Yeh, Ping-Hung
In this work, the authors study a polycrystalline silicon thin-film transistor (poly-Si TFT) with oxide/nitride/oxide (ONO) stack gate dielectrics and multiple nanowire channels for the applications of both nonvolatile silicon-oxide-nitride-oxide-silicon (SONOS) memory and switch transistor. The proposed device named as nanowire SONOS-TFT has superior electrical characteristics of a transistor such as on/off current ratio, threshold voltage (V-th), and subthreshold slope due to the good gate control ability originated from fringing electrical field effects. Moreover, the proposed device under adequate operation scheme can exhibit high program/erase efficiency and good retention time characteristics at high temperature. (c) 2007 American Institute of Physics.
Generation of supercontinuum bottle beam using an axicon
(2007-03-19)
Lin, Ja-Hon
;
Wei, Ming-Dar
;
Liang, Hui-Hung
;
Lin, Kuei-Huei
;
Hsieh, Wen-Feng
A supercontinuum bottle beam was successfully produced by focusing a supercontinuum laser beam after passing through an axicon. The supercontinuum radiation was generated from a microstructured fiber pumped by a self-kerr-lensmode-locked femtosecond Ti: sapphire laser. The cross-section intensity distributions of the generated bottle were recorded by a beam profiler. Using the line filters to select different central wavelengths, the different colors of bottle beams show slightly different bottle ranges and diameters due to the dispersion of axicon and focusing lens. The results consist with the theoretical prediction using the Fresnel-Kirchhoff's formula in considering an incident Gaussian beam. (c) 2007 Optical Society of America.
Time-domain and spectral-domain investigation of inflection-point slow-light modes in photonic crystal coupled waveguides
(2007-03-19)
Huang, Shih-Chieh
;
Kato, Masao
;
Kuramochi, Eiichi
;
Lee, Chien-Ping
;
Notomi, Masaya
We report on spectral-domain and time-domain measurements and numerical calculations of group velocities in a photonic crystal coupled waveguide, where the unique guided mode band structure has a flat band region within the photonic band gap allowing for slow light observation. The spectral dependence of group velocity, which is measured by interference method, indicates the existence of slow light modes around the inflection point of the unique flat band, rather than at the band edge. Time-domain observation of optical pulses propagating along two-dimension slab photonic crystal coupled waveguides is also demonstrated by using a high speed oscilloscope. By adjusting the wavelength of the input pulses toward the flat band of the coupled defect modes, an increasing duration time between reference and output pulses are clearly observed. An extremely small group velocity of 0.017c is thus obtained. Calculated group velocities show good agreement with our measured results. (c) 2007 Optical Society of America.
月亮洗頭
(2007-03-20)
管管
月亮洗頭
(2007-03-20)
管管
Reconfigurable switched- capacitor input circuit with digital-stimulus acceptability for analog tests
(2007-03-22)
Hong, Hao-Chiao
A reconfigurable switched-capacitor input circuit with digital-stimulus acceptability for analog tests disclosed in the present invention provides the digital input interfaces, which are comprised of capacitors, analog switches and digital circuits, for the usage of testing the mixed-signal circuits. The present invention provides a low-priced testing platform to accomplish the testing of circuits and to solve the problems of high-cost mixed mode tester and of utmost restrictions against the surrounding condition. Therefore, the present invention improves the testability, reduces the test cost, shorten the processes of designation and efficiently seize on the time-to-market.
Facial washer
(2007-03-22)
Sha, Yung-Jye
;
Liao, Wen-Chin
A facial washer is disclosed to include a basin, which has a plurality of water outlets symmetrically arranged on the inside wall thereof at two opposite lateral sides, a plurality of adjustable jet nozzles, which are respectively mounted in the water outlets inside the basin for ejecting a respective stream of water, each having a fixed ball socket and a ball valve rotatably supported in the ball socket for guiding water out of the respective water outlet in the form of a stream of water, and a control device for controlling the supply of water to the adjustable jet nozzles.
Phase segregation assisted morphology sculpting: Growth of graphite and silicon crystals via vapor-solid reactions
(2007-03-22)
Huang, Chih-Hao
;
Chang, Yu-Hsu
;
Lin, Huang-Kai
;
Peng, Chih-Wei
;
Chung, Wen-Sheng
Crystalline graphite and Si showing fertile morphologies are prepared via vapor-solid reaction growth (VSRG). By reacting CaC2 with vapors of CxCly (CxCly: CCl4, C2Cl4, C4Cl6, and C5Cl6), porous, fibrous, and planar graphite were obtained at 973-1023, 1073-1123, and 1123-1223 K, respectively. Employing SiCl4 to react with MxSiy (MxSiy: Mg2Si and CaSi2) generated many Si structures. These include clustered-particle and porous, wirelike, corallike, and planar or platelike at 1023, 1073, 1123, and 1223 K, respectively. The reaction products, the network solids (graphite and Si) and the ionic solids MCl2, phase-segregated into self-templating molds and casts and develop cooperatively into various three-dimensional structures. Final morphology of the network solids depends not only on the reaction temperature but their molar volume ratio to the MCl2 salt products.
Method for forming gate pattern for electronic device
(2007-03-22)
Chen, Szu-Hung
;
Kuo, Chien-I
;
Chang, Edward Yi
A method for forming a gate pattern for an electronic device, comprising steps of: providing a substrate, whereon a first photo-resist layer is formed; performing a first photo-lithography process so as to form a first pattern with a first width on the substrate; forming a second photo-resist layer, covering the first pattern and the first photo-resist layer on the substrate; and performing a second photo-lithography process, which is shifted from the first photo-lithography process, so as to form a second pattern with a second width on the substrate; wherein the second width is smaller than the first width.
Syntheses and structures of low-coordinate and multiply-bonded M-M complexes
(2007-03-25)
Tsai, Yi-Chou
;
Lin, Yang-Miin
;
Yu, Jen-Shiang K.
;
Hwang, Jenn-Kang
;
生物科技學系
CARB 126-Combinatorial biosynthesis of NDP-deoxysugars and spinosyn glycosides by in vitro recombination of secondary metabolite biosynthetic pathways
(2007-03-25)
Chiu, Hsien-Tai
;
Chen, Yi-Lin
;
生物科技學系
;
Department of Biological Science and Technology
Directly grafts the conjugated polymer to nanoparticle surface synthesis, characterization and application for organic electronic devices
(2007-03-25)
Wang, Hsu-Shen
;
Wei, Kung-Hwa
;
材料科學與工程學系
;
Department of Materials Science and Engineering
Tandem enzymatic syntheses of TDP-deoxysugars and spinosyn analogs by in vitro recombination of natural product biosynthetic pathways
(2007-03-25)
Chiu, Hsien-Tai
;
Chen, Yi-Lin
;
Wu, Chih Chien
;
生物科技學系
;
Department of Biological Science and Technology
Enhance photocurrent in poly(3-hexylthiophene)/gold nanoparticle composite films by gold surface plasmon resonance
(2007-03-25)
Chiu, Mao-Yuan
;
Wei, Kung-Hwa
;
材料科學與工程學系
;
Department of Materials Science and Engineering
Nano-roughening n-side surface of AlGaInP-based LEDs for increasing extraction efficiency
(2007-03-25)
Lee, Y. J.
;
Lu, T. C.
;
Kuo, H. C.
;
Wang, S. C.
;
Hsu, T. C.
A chemical wet etching technique is presented to form a nano-roughened surface with triangle-like morphology on n-side-up AlGaInP-based LEDs fabricated by adopting adhesive layer bonding scheme. A simple and commonly used H3PO4-based solution was applied for chemical wet etching. The morphology of nano-roughened surfaces is analyzed by the atomic force microscope (AFM) and significantly related to the enhancement factor of the LED output power. The output power shows 80% increase after optimizing the nano-roughened morphology of n-side surface, as compared to the ordinary flat surface LED. (c) 2006 Elsevier B.V. All rights reserved.
Thickness effects on the electrical characteristics of Ba0.7Sr0.3TiO3 capacitors with nano-Cr interlayer
(2007-03-26)
Ho, Chia-Cheng
;
Chiou, Bi-Shiou
;
Chang, Li-Chun
;
電子工程學系及電子研究所
;
Innovative Packaging Research Center
A multilayer Ba0.7Sr0.3TiO3/Cr/Ba0.7Sr0.3TiO3 (BST/Cr/BST) structure was sputtered sequentially onto Pt/Ti/SiO2/Si substrate. With the insertion of a 2 nm Cr interlayer, the temperature coefficient of capacitance of the BST/Cr/BST dielectric is about 69% lower than that of BST monolayer dielectric. The dielectric constant and dissipation factor as the function of Cr thickness are studied. X-ray diffraction patterns, the analysis results of energy dispersive spectroscopy, and the survey scan profiles of Auger electron spectroscopy reveal the formation of a TiO2 secondary phase after the multilayer is annealed at 800 degrees C in O-2 atmosphere. The insertion of nano-Cr interlayer improves the electrical properties of BST capacitors. (c) 2007 American Institute of Physics.
Memory characteristics of Co nanocrystal memory device with HfO(2) as blocking oxide
(2007-03-26)
Yang, F. M.
;
Chang, T. C.
;
Liu, P. T.
;
Yeh, P. H.
;
Yu, Y. C.
In this letter, the Co nanocrystals using SiO(2) and HfO(2) as the tunneling and the control dielectric with memory effect has been fabricated. A significant memory effect was observed through the electrical measurements. Under the low voltage operation of 5 V, the memory window was estimated to similar to 1 V. The retention characteristics were tested to be robust. Also, the endurance of the memory device was not degraded up to 10(6) write/erase cycles. The processing of the structure is compatible with the current manufacturing technology of semiconductor industry. (c) 2007 American Institute of Physics.