Browsing by Issue Date, starting with "2007-03-20"

Now showing 1 - 20 of 59984

月亮洗頭
(2007-03-20)
管管
月亮洗頭
(2007-03-20)
管管
Reconfigurable switched- capacitor input circuit with digital-stimulus acceptability for analog tests
(2007-03-22)
Hong, Hao-Chiao
A reconfigurable switched-capacitor input circuit with digital-stimulus acceptability for analog tests disclosed in the present invention provides the digital input interfaces, which are comprised of capacitors, analog switches and digital circuits, for the usage of testing the mixed-signal circuits. The present invention provides a low-priced testing platform to accomplish the testing of circuits and to solve the problems of high-cost mixed mode tester and of utmost restrictions against the surrounding condition. Therefore, the present invention improves the testability, reduces the test cost, shorten the processes of designation and efficiently seize on the time-to-market.
Facial washer
(2007-03-22)
Sha, Yung-Jye
;
Liao, Wen-Chin
A facial washer is disclosed to include a basin, which has a plurality of water outlets symmetrically arranged on the inside wall thereof at two opposite lateral sides, a plurality of adjustable jet nozzles, which are respectively mounted in the water outlets inside the basin for ejecting a respective stream of water, each having a fixed ball socket and a ball valve rotatably supported in the ball socket for guiding water out of the respective water outlet in the form of a stream of water, and a control device for controlling the supply of water to the adjustable jet nozzles.
Phase segregation assisted morphology sculpting: Growth of graphite and silicon crystals via vapor-solid reactions
(2007-03-22)
Huang, Chih-Hao
;
Chang, Yu-Hsu
;
Lin, Huang-Kai
;
Peng, Chih-Wei
;
Chung, Wen-Sheng
Crystalline graphite and Si showing fertile morphologies are prepared via vapor-solid reaction growth (VSRG). By reacting CaC2 with vapors of CxCly (CxCly: CCl4, C2Cl4, C4Cl6, and C5Cl6), porous, fibrous, and planar graphite were obtained at 973-1023, 1073-1123, and 1123-1223 K, respectively. Employing SiCl4 to react with MxSiy (MxSiy: Mg2Si and CaSi2) generated many Si structures. These include clustered-particle and porous, wirelike, corallike, and planar or platelike at 1023, 1073, 1123, and 1223 K, respectively. The reaction products, the network solids (graphite and Si) and the ionic solids MCl2, phase-segregated into self-templating molds and casts and develop cooperatively into various three-dimensional structures. Final morphology of the network solids depends not only on the reaction temperature but their molar volume ratio to the MCl2 salt products.
Method for forming gate pattern for electronic device
(2007-03-22)
Chen, Szu-Hung
;
Kuo, Chien-I
;
Chang, Edward Yi
A method for forming a gate pattern for an electronic device, comprising steps of: providing a substrate, whereon a first photo-resist layer is formed; performing a first photo-lithography process so as to form a first pattern with a first width on the substrate; forming a second photo-resist layer, covering the first pattern and the first photo-resist layer on the substrate; and performing a second photo-lithography process, which is shifted from the first photo-lithography process, so as to form a second pattern with a second width on the substrate; wherein the second width is smaller than the first width.
Syntheses and structures of low-coordinate and multiply-bonded M-M complexes
(2007-03-25)
Tsai, Yi-Chou
;
Lin, Yang-Miin
;
Yu, Jen-Shiang K.
;
Hwang, Jenn-Kang
;
生物科技學系
CARB 126-Combinatorial biosynthesis of NDP-deoxysugars and spinosyn glycosides by in vitro recombination of secondary metabolite biosynthetic pathways
(2007-03-25)
Chiu, Hsien-Tai
;
Chen, Yi-Lin
;
生物科技學系
;
Department of Biological Science and Technology
Directly grafts the conjugated polymer to nanoparticle surface synthesis, characterization and application for organic electronic devices
(2007-03-25)
Wang, Hsu-Shen
;
Wei, Kung-Hwa
;
材料科學與工程學系
;
Department of Materials Science and Engineering
Tandem enzymatic syntheses of TDP-deoxysugars and spinosyn analogs by in vitro recombination of natural product biosynthetic pathways
(2007-03-25)
Chiu, Hsien-Tai
;
Chen, Yi-Lin
;
Wu, Chih Chien
;
生物科技學系
;
Department of Biological Science and Technology
Enhance photocurrent in poly(3-hexylthiophene)/gold nanoparticle composite films by gold surface plasmon resonance
(2007-03-25)
Chiu, Mao-Yuan
;
Wei, Kung-Hwa
;
材料科學與工程學系
;
Department of Materials Science and Engineering
Nano-roughening n-side surface of AlGaInP-based LEDs for increasing extraction efficiency
(2007-03-25)
Lee, Y. J.
;
Lu, T. C.
;
Kuo, H. C.
;
Wang, S. C.
;
Hsu, T. C.
A chemical wet etching technique is presented to form a nano-roughened surface with triangle-like morphology on n-side-up AlGaInP-based LEDs fabricated by adopting adhesive layer bonding scheme. A simple and commonly used H3PO4-based solution was applied for chemical wet etching. The morphology of nano-roughened surfaces is analyzed by the atomic force microscope (AFM) and significantly related to the enhancement factor of the LED output power. The output power shows 80% increase after optimizing the nano-roughened morphology of n-side surface, as compared to the ordinary flat surface LED. (c) 2006 Elsevier B.V. All rights reserved.
Thickness effects on the electrical characteristics of Ba0.7Sr0.3TiO3 capacitors with nano-Cr interlayer
(2007-03-26)
Ho, Chia-Cheng
;
Chiou, Bi-Shiou
;
Chang, Li-Chun
;
電子工程學系及電子研究所
;
Innovative Packaging Research Center
A multilayer Ba0.7Sr0.3TiO3/Cr/Ba0.7Sr0.3TiO3 (BST/Cr/BST) structure was sputtered sequentially onto Pt/Ti/SiO2/Si substrate. With the insertion of a 2 nm Cr interlayer, the temperature coefficient of capacitance of the BST/Cr/BST dielectric is about 69% lower than that of BST monolayer dielectric. The dielectric constant and dissipation factor as the function of Cr thickness are studied. X-ray diffraction patterns, the analysis results of energy dispersive spectroscopy, and the survey scan profiles of Auger electron spectroscopy reveal the formation of a TiO2 secondary phase after the multilayer is annealed at 800 degrees C in O-2 atmosphere. The insertion of nano-Cr interlayer improves the electrical properties of BST capacitors. (c) 2007 American Institute of Physics.
Memory characteristics of Co nanocrystal memory device with HfO(2) as blocking oxide
(2007-03-26)
Yang, F. M.
;
Chang, T. C.
;
Liu, P. T.
;
Yeh, P. H.
;
Yu, Y. C.
In this letter, the Co nanocrystals using SiO(2) and HfO(2) as the tunneling and the control dielectric with memory effect has been fabricated. A significant memory effect was observed through the electrical measurements. Under the low voltage operation of 5 V, the memory window was estimated to similar to 1 V. The retention characteristics were tested to be robust. Also, the endurance of the memory device was not degraded up to 10(6) write/erase cycles. The processing of the structure is compatible with the current manufacturing technology of semiconductor industry. (c) 2007 American Institute of Physics.
Enhanced photovoltaic response of organic solar cell by singlet-to-triplet exciton conversion
(2007-03-26)
Yang, Chia-Ming
;
Wu, Chi-Hui
;
Liao, Hua-Hsin
;
Lai, Kuei-Yuan
;
Cheng, Hong-Ping
Ir complex was doped to conjugated polymers, and the photoinduced absorption of triplet excitons in host materials was examined. A greatly enhanced intersystem crossing rate was observed, despite the decrease in triplet exciton lifetime. The authors find that the steady-state triplet exciton population in host polymer would increase by an order of magnitude. Conjugated polymer/colloidal CdSe nanocrystal hybrid solar cells were fabricated and the effect of Ir-complex doping on photovoltaic response was studied. It was found that due to the enhanced singlet-to-triplet conversion, greatly enhanced photovoltaic response of these hybrid organic solar cells was observed. The results suggest that triplet solar cells may be achieved by doping conventional photovoltaic materials with transition-metal complexes. (c) 2007 American Institute of Physics.
Optical investigations of InN nanodots capped by GaN at different temperatures
(2007-03-26)
Ku, C. S.
;
Chou, W. C.
;
Lee, M. C.
;
電子物理學系
;
Department of Electrophysics
InN nanodots capped with GaN for temperatures from 600 to 730 degrees C were investigated. While the dot emission intensity at 0.77 eV decreased with increasing capping temperature, two extra visible emission bands appeared around 2.37 eV (green band) and 2.96 eV (violet band). Furthermore, x ray diffraction shows that the 71.7 degrees and 70.2 degrees peaks were tentatively attributed to InGaN alloy with In fractions of 14.8% and 34.2%, respectively. Moreover, the near-field measurements helped reveal the regions of different emissions. The violet-band mapping showed a spatial distribution in contrast to nanodot distribution but the green band showed a uniform distribution that apparently reflects the capping induced InGaN alloy. (c) 2007 American Institute of Physics.
Memory characteristics of Co nanocrystal memory device with HfO2 as blocking oxide
(2007-03-26)
Yang, F. M.
;
Chang, T. C.
;
Liu, P. T.
;
Yeh, P. H.
;
Yu, Y. C.
In this letter, the Co nanocrystals using SiO2 and HfO2 as the tunneling and the control dielectric with memory effect has been fabricated. A significant memory effect was observed through the electrical measurements. Under the low voltage operation of 5 V, the memory window was estimated to similar to 1 V. The retention characteristics were tested to be robust. Also, the endurance of the memory device was not degraded up to 10(6) write/erase cycles. The processing of the structure is compatible with the current manufacturing technology of semiconductor industry. (c) 2007 American Institute of Physics.
Method for performing context adaptive binary arithmetic coding with stochastic bit reshuffling for fine granularity scalability
(2007-03-29)
Peng, Wen-Hsiao
;
Chiang, Tihao
;
Hang, Hsueh-Ming
The disclosure relates to a method for performing context based binary arithmetic coding with a stochastic bit-reshuffling scheme in order to improve MPEG-4 fine granularity scalability (FGS) based bit-plane coding. The method comprises steps of: replacing 8×8 DCT with 4×4 integer transform coefficient in MPEG-4 AVC (Advance Video-Coding); partitioning each transform coefficient into significant bit and refinement bit; setting up significant bit context based on energy distribution within a transform block and spatial correlation in adjacent blocks; using an estimated Laplacian distribution to derive coding probability for the refinement bit; and using the context across bit-planes to partition each significant bit-plane for saving side information bit.
Fiber bragg grating sensored segmented deflectometer for ground displacement monitoring
(2007-03-29)
Huang, An-Bin
;
Ho, Yen-Te
The invention provides a monitoring device mainly for sensing ground displacement, including the fiber Bragg grating sensored deflectometer and the signal interrogator/computer system. The device uses a segmented design that consists of a flexible tube (referred to as the flexible segment) and two rigid segments and thus referred to as the FBG segmented deflectometer (FBG-SD). For field installation, multiple FBG-SD units are connected together to form a string as it is inserted into a grouted-in-place inclinometer casing. The distortion of the inclinometer casing induced by ground movement causes relative rotation of the inserted FBG-SD. All of the FBG-SD units are connected to an FBG interrogator/computer system situated on ground surface. The FBG signals are recorded and analyzed by the interrogator/computer system.
Synthesis of upper-rim allyl- and p-methoxyphenylazocalix[4]arenes and their efficiencies in chromogenic sensing of Hg2+ ion
(2007-03-30)
Ho, I-Ting
;
Lee, Gene-Hsiang
;
Chung, Wen-Sheng
;
應用化學系
;
Department of Applied Chemistry
A series of upper-rim p-allyl and p-methoxyphenylazocalix[4]arenes (6, 8, 9a, b, and 10a,b) were synthesized and shown to exhibit substantial color changes upon complexation with Hg2+ ion. Both the upper-rim p-allyl- and p-methoxyphenylazo groups on calix[4]arenes are proven to be key components in the recognition of Hg2+ ion. Job's plots revealed 1:1 binding stoichiometry for all these p-allyl- and p-arylazo-coupled calix[4]arenes with Hg2+ ions and Benesi-Hilderbrand plots were used for determination of their association constants. Our results also demonstrated that two p-methoxyphenylazo groups prefer to bind Hg2+ in a distal orientation rather than a proximal one, and if there are three p-methoxyphenylazo groups, the third flanking p-methoxyphenylazo group plays a role in disturbing the binding of the two distal diazo groups. Furthermore, it should be noted that triazocalix[4]arenes (6, 9a, and 9a) responded to all 14 metal ions without showing much preference among the eight transition-metal ions screened in this work (Cr3+, Ni2+, Cu2+, Ag+, Cd2+, Hg+, Hg2+, and Pb2+).