Browsing by Issue Date, starting with "2007-05-15"
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Item type:Item, Convergence of phase fluctuation induced by intrachannel four-wave mixing in differential phase-shift keying transmission systems via phase fluctuation averaging(2007-05-15) ;Wei, Chia Chien ;Chen, Jason (Jyehong) ;光電工程學系Department of PhotonicsThis work investigates the effect of phase fluctuation averaging on phase fluctuation induced by intrachannel four-wave mixing (IFWM) in highly dispersed differential phase-shift keying transmission systems. Through repeatedly averaging the phase fluctuations of adjacent pulses, a simple analytical model and numerical simulation revealed that the IFWM-induced differential phase fluctuation is suppressed and convergent, even after an ultralong transmission. The influence of averaging the phase fluctuations on the bit error rate is also evaluated by the semianalytical method. (c) 2007 Optical Society of America.Item type:Item, Restricted connectivity for three families of interconnection networks(2007-05-15) ;Chen, Y-Chuang ;Tan, Jimmy J. M. ;資訊工程學系Department of Computer ScienceVertex connectivity and edge connectivity are two important parameters in interconnection networks. Even though they reflect the fault tolerance correctly, they undervalue the resilience of large networks. By the concept of conditional connectivity and super-connectivity, the concept of restricted vertex connectivity and restricted edge connectivity of graphs was proposed by Esfahanian [A.H. Esfahanian, Generalized measures of fault tolerance with application to N-cube networks, IEEE Transactions on Computers 38 (1989) 1586-1591]. Such measures take the resilience of large networks into consideration. In this paper, we propose three families of interconnection networks and discuss their restricted vertex connectivity and restricted edge connectivity. In particular, the hypercubes, twisted-cubes, crossed-cubes, mobius cubes, star graphs, pancake graphs, recursive circulant graphs, and k-ary n-cubes are special cases of these families. (c) 2006 Elsevier Inc. All rights reserved.Item type:Item, iPTREE-STAB: interpretable decision tree based method for predicting protein stability changes upon mutations(2007-05-15) ;Huang, Liang-Tsung ;Gromiha, M. Michael ;Ho, Shinn-Ying ;生物科技學系生物資訊及系統生物研究所We have developed a web server, iPTREE-STAB for discriminating the stability of proteins (stabilizing or destabilizing) and predicting their stability changes (AAG) upon single amino acid substitutions from amino acid sequence. The discrimination and prediction are mainly based on decision tree coupled with adaptive boosting algorithm, and classification and regression tree, respectively, using three neighboring residues of the mutant sit. along N- and C-terminals. Our method showed an accuracy of 82% for discriminating the stabilizing and destabilizing mutants, and a correlation of 0.70 for predicting protein stability changes upon mutations.Item type:Item, Effect of backbone on the biaxial retardation of polyimide films in uniaxial stretch(2007-05-15) ;King, Jinn-Shing ;Whang, Wha-Tzong ;Lee, Wen-Chin ;Chang, Li-Ming材料科學與工程學系A biaxial-retardation film prepared from the uniaxial-stretched polyimide (PI) film was developed for compensating the viewing angle of liquid-crystal displays. Good uniformity of in-plane bireffingence in well-stretched PI films was observed visually with two crossed polarizers. The prism coupling method was used to measure the n(x), n(y), n(z), and thickness of the stretched PI films. The birefringence variations of n, - n, (difference of refractive indices between x- and y-axes) and n(x) - n(z) during the stretching process were highly affected by PI structure. The polarizability tensors and intrinsic birefringences of the PI repeat units were estimated by Gaussian 98W. It was found that the stretch-induced birefringence is more related to the average polarizability per volume at the low elongation period. (C) 2006 Elsevier B.V. All rights reserved.Item type:Item, Raman spectroscopy study of Zn1-xMnxSe thin films under high-pressure(2007-05-15) ;Lin, Chih-Ming ;Chuu, Der-San ;電子物理學系Department of ElectrophysicsRaman spectroscopy was used to study phase transitions of substrate-free Zn1-xMnxSe thin films, x=0.07, 0.17, and 0.29, under high pressure up around 20.0 GPa at ambient temperature. One Raman mode, transverse optical split mode, was observed before metallization at 2.9 +/- 1.0, 2.4 +/- 0.8, and 2.1 +/- 0.6 GPa for Zn0.71Mn0.29Se, Zn0.83Mn0.17Se, and Zn0.93Mn0.07Se thin films, respectively. The semiconductor-metallic transition pressure for Zn0.71Mn0.29Se, Zn0.83Mn0.17Se, and Zn0.93Mn0.07Se thin films was observed at 9.4 +/- 0.4, 10.9 +/- 0.6, and 11.7 +/- 0.2 GPa, respectively. It was found that the relation of the ionicity and the reduction of the pressure in transition from semiconductor to metal phase for Zn1-xMnxSe thin films was not the same as that of bulk crystals. The percentage of the increasing of the Gruneison parameter of longitudinal optical mode for semiconductor to metal phase transition might be the important factor inherently related to the reduction of phase transition pressure for substrate-free Zn1-xMnxSe thin film systems. (c) 2007 American Institute of Physics.Item type:Item, 人類身體特徵姿勢資訊自動抽取系統(2007-05-16) ;廖弘源陳敦裕本發明之人類身體特徵姿勢抽取方法,係包括:由連續數位化畫面中抽取畫面中所含物件(object)之空間域特徵;利用機率計算方法,抽取該物件之形狀特徵;利用亂度計算方法偵測該連續畫面中所含之特徵姿勢資訊;除去冗餘之特徵姿勢;將所得之連串特徵姿勢與一碼書中所存之人類身體特徵姿勢樣型比對;及對配對之連串特徵姿勢進行編碼。Item type:Item, 用以註冊雙網設備的電話號碼及IP位址於位置註冊器之方法(2007-05-16) ;張明峰 ;林一平 ;蔡文能張弘鑫本發明有關一種用以註冊雙網設備的電話號碼及IP位址於位置註冊器之方法,雙網設備向位置註冊器發出註冊訊息,位置註冊器驗證雙網設備的ID方式有二:第一方式為要求欲註冊的雙網設備撥打電話或傳送簡訊至一指定的來話號碼解碼器,再檢查解碼器所接收之號碼與註冊訊息之電話號碼是否相同;及第二方式為要求一指定話機撥打電話或傳送簡訊至欲註冊之雙網設備,該雙網設備再將收到的來電號碼送至位置註冊器接受鑑認,若通過上述驗證方式,則該雙網設備可在位置註冊器之資料庫內產生,修正或刪除其本身之至少含電話號碼及IP位址的資料。Item type:Item, Pressurized water extraction of polysaccharides as secondary metabolites from Lentinula edodes(2007-05-16) ;Lo, Tiffany Chien Ting ;Tsao, Hsin Hsin ;Wang, Ai Yih ;Allen Chang, C.生物科技學系The suitability of pressurized water extraction (PWE) of crude polysaccharides as secondary metabolites from Lentinula edodes was investigated. A series of experiments were carried out to examine the effects of extraction times and pressures. The results indicated that the maximum recovery of polysaccharides was about 90% of the crude polysaccharides from mycelia pellets when the pressure was at 10.1 MPa for 70 min (28 degrees C). This was a drastic improvement over that of boiling water extraction (BWE) at 0.1 MPa for 40 min, which gave only 27.9% recovery. A nitroblue tetrazolium (NBT) reduction assay was used to examine the macrophage stimulating activities (MSA), and it was found that the PWE polysaccharides retained the MSA. The morphology of the macrophage cells treated by PWE polysaccharides was also examined and found to be similar to that of the positive control lipopolysaccharides treated. Finally, gel chromatographic and NMR experiments revealed that both PWE and BWE polysaccharides showed the presence of four similar molecular mass components and the alpha-(1 -> 4)-D-Glcp and beta-(1 -> 6)-D-Glcp linkage residues. The improved PWE efficiency is probably due to the possibility that under high pressure, the solid polysaccharide's hydrogen bonding is partially destroyed to increase structure elasticity and water solubility.Item type:Item, 多層有機分子光電元件之製造方法(2007-05-16) ;孟心飛 ;洪勝富 ;許千樹 ;林世昌廖華賢提供一種在製造過程中不會產生層間互溶現象之高安定性多層有機分子光電元件、以及可利用較簡便的溶液製程製造多層有機分子光電元件之方法。Item type:Item, 多波長發光元件之奈米粒結構及其製法(2007-05-16) ;陳衛國柯文政本發明提供一種具有奈米粒之多波長發光元件結構及製法,主要特徵係該發光元件結構具有多層堆疊主動層,該主動層可為量子井、單異質或雙異質接面結構;該主動層之每一對堆疊層包含低能隙位能井層4與高能隙位能障層3,該發光元件中之奈米粒5,係成長於多層堆疊主動層中較低能隙之位能井層4內;該每一奈米粒所發光波長可以藉由控制奈米粒之元素組成、奈米粒之尺寸及具有量子效應之奈米粒基態或激發態之能量躍遷,而獲得一種(含)以上之發光波長。該含奈米粒主動層之發光奈米粒所發射之波長可以為單一發光波長、兩種具互補色發光波長或三種三原色以上發光波長,以製作成多波長(包含白光光源)之發光元件;該結構更可以外加螢光體方式,利用上述該含奈米粒主動層之發光波長激發一種(含)以上螢光波長之螢光體,其中奈米粒所發光之波長可參與或不參與螢光體之螢光波長配色,組成具有多波長、白光或全彩之發光元件。Item type:Item, 嵌入式網路操控之光流影像定位全方向運動系統(2007-05-16) ;吳立偉 ;鄭榮煌 ;張永融胡竹生本發明係為一種嵌入式網路操控之光流影像定位全方向運動系統,其係為以一本體上設置複數個運動單元以及至少一嵌入式網路操控系統,且在本體朝向地面的表面上設置有至少一光流感測器(Optical Flow Sensor),其中,在運動單元中包含一全向輪(Omni-Directional Wheel)及一馬達裝置;本體的運動係藉由運動單元提供動力,以光流感測器偵測運動狀態且產生光流感測資料,而嵌入式網路操控系統透過通訊網路,可與外部的資訊處理運算端傳輸運動資料與光流感測資料,同時,此運動系統更可連接週邊控制裝置,增加整體系統操控的便利性。由於本發明係利用光流影像偵測的定位方法,即使有輪子滑動、週遭環境變化、誤差累積等等干擾計算的因素產生,仍可獲得精準的定位結果。Item type:Item, Manufacturing multilayer conjugate polymer optoelectronics device by using buffer layer(2007-05-17) ;Meng, Hsin-Fei ;Horng, Sheng-Fu ;Hsu, Chain-Shu ;Lin, Shi-ChengLiao, Hua-HsienA highly stable, multilayer organic molecular photoelectric element without interlayer miscibility phenomenon during manufacturing process, and a method for producing multilayer organic molecular photoelectric elements with simplified solution process are disclosed.Item type:Item, Ab initio study of the ClO+NH2 reaction: Prediction of the total rate constant and product branching ratios(2007-05-17) ;Zhu, R. S. ;Lin, M. C. ;交大名義發表National Chiao Tung UniversityThe mechanism for ClO + NH2 has been investigated by ab initio molecular orbital and transition-state theory calculations. The species involved have been optimized at the B3LYP/6-311+G(3df,2p) level and their energies have been refined by single-point calculations with the modified Gaussian-2 method, G2M(CC2). Ten stable isomers have been located and a detailed potential energy diagram is provided. The rate constants and branching ratios for the low-lying energy channel products including HCl + HNO, Cl + NH2O, and HOCl + (NH)-N-3 (X-3 Sigma(-)) are calculated. The result shows that formation of HCl + HNO is dominant below 1000 K; over 1000 K, Cl + NH2O products become dominant. However, the formation of HOCl + (NH)-N-3 (X-3 Sigma(-)) is unimportant below 1500 K. The pressure-independent individual and total rate constants can be expressed as k(1)(HCl + HNO) = 4.7 x 10(-8)(T-1.08) exp((-129)/(T)), k(2)(Cl + NH2O) = 1.7 x 10(-9)(T-0.62) exp((-24)/(T)), k(3)(HOCl + NH) = 4.8 x 10(-29)(T-5.11) exp((-1035)/(T)), and k(total) = 5.0 x 10(-9)(T-0.67) exp((-1.2)/(T)), respectively, with units of cm(3) molecule(-1) s(-1), in the temperature range of 200-2500 K.Item type:Item, Nanoparticle structure and manufacturing process of multi-wavelength light emitting device(2007-05-17) ;Chen, Wei-KuoKe, Wen-ChengA structure of multi-wavelength light emitting device comprises multi-stacked active layer structure. Each stacked layer comprises lower energy bandgap well 4 and higher energy bandgap barrier layer 3 wherein at least one stacked layer in the device contains nanoparticles. As a result, the emitting wavelengths of the multi-stacked active layer structure consist parts (or all) of the emitting wavelengths come from the stack layers containing nanoparticles, and parts (or all) of the emitting wavelengths come from the stack layers not containing nanoparticles. In another embodiment, parts (or all) of the emitting wavelengths of the multi-stacked active layer structure can be also used to trigger one or more phosphorescences from the phosphors, thus the emitting wavelengths of such a phosphors converted light emitting device may come partially from the multi-stacked active layer itself and partially (or all) from the phosphors.Item type:Item, High-performance bottom-contact devices based on an air-stable n-type organic semiconductor N,N-bis (4-trifluoromethoxybenzyl)-1,4,5,8-naphthalene-tetracarboxylic di-imide(2007-05-21) ;Kao, Chia-Chun ;Lin, Pang ;Lee, Cheng-Chung ;Wang, Yi-KaiHo, Jia-ChongN,N-bis(4-trifluoromethoxybenzyl)-1,4,5,8-naphthalene-tetracarboxylic di-imide was applied to organic semiconductors for bottom-contact thin-film transistors. The carrier mobility was 1.6x10(-2) cm(2) V-1 s(-1), the threshold voltage (V-T) was +5.5 V, and the on/off current ratio was 8.6x10(5). Devices without any further surface treatments were tested in an ambient environment. The threshold voltage shift (Delta V-T) was verified by gate bias stress measurements. A prototype compound, N,N-bis(4-trifluoromethylbenzyl)naphthalene-1,4,5,8-tetracarboxylic di-imide, shows direct correlation to the bottom-contact device with the varied molecular structure. (c) 2007 American Institute of Physics.Item type:Item, Using double layer CoSi2 nanocrystals to improve the memory effects of nonvolatile memory devices(2007-05-21) ;Yang, F. M. ;Chang, T. C. ;Liu, P. T. ;Yeh, P. H.Chen, U. S.The nonvolatile memory device with multilayer nanocrystals has advantages such as the memory effects can be increased by the increasing density of the nanocrystals and the whole retention characteristic can be improved. There are much more electrons that can be stored in the double layer than single layer nanocrystal memory device. The double layer CoSi2 nanocrystals have better retention characteristic than the single layer. The good retention characteristic of the double layer device is due to the Coulomb-blockage effects on the top layer nanocrystals from the bottom layer nanocrystals. So, the memory effects of the nonvolatile memory device can be improved by using the double layer nanocrystals. (c) 2007 American Institute of Physics.Item type:Item, Exciton energy transfer between optically forbidden states of molecular aggregates(2007-05-21) ;Kobayashi, Takayoshi ;Taneichi, Takashi ;Takasaka, Shigehiro ;電子物理學系先進超快雷射研究中心3-ethyl-2-[3-(3-ethyl-2(3H)-benzoxazolylidene)-1-propenyl]benzoxazolium iodide (dye I) and pseudoisocyanine bromide are employed to form H aggregates as donors and J aggregates as acceptors. The energy of an H band of the H aggregates is higher than that of a J band of the J aggregates. It was confirmed that excitation of the H band does not emit fluorescence by comparison of excitation spectra of dye I H aggregates with that of dye I monomer. Absorption, fluorescence, and excitation spectra of spin-coated films of H aggregates mixed with various quantities of J aggregates have been observed. Excitation spectra probed at the J band are found to have a component of the H band. Fluorescence spectra originated from excitation of the H band are extracted and qualitatively analyzed. It is confirmed that excitation of the H band causes to emit fluorescence of a J band of the J aggregates. These phenomena show that exciton energy can transfer from the lowest energy in electronic states of the H aggregate, which state is optically forbidden, to electronic state of the J aggregate. (C) 2007 American Institute of Physics.Item type:Item, 交大e-News第002期(2007-05-21) ;Secretariat國立交通大學秘書室Item type:Item, Micellar morphologies of self-associated diblock copolymers in acetone solution(2007-05-21) ;Tung, Pao-Hsiang ;Kuo, Shiao-Wei ;Chen, Shih-Chien ;Lin, Chen-LungChang, Feng-ChihWe describe the synthesis and solution morphologies of poly(vinyl phenol-b-styrene) (PVPh-b-PS) micelles and the effects that changing the copolymer composition and concentration have on self-assembly structures of PVPh-b-PS in acetone (a good solvent for PVPh). These PVPh-b-PS copolymers aggregated into spherical, rod-like, and vesicular morphologies. The transformations of the PVPh-b-PS block copolymer micelles in acetone depended on a number of parameters, including the relative block lengths, their concentrations, and the degree of self-association through hydrogen bonding of the coronal PVPh chains. We also investigated the morphologies of the micelles formed from acetone solutions of poly (4-tert-butoxystyrene-b-styrene) (PtBOS-b-PS) copolymers having the same degree of polymerization as the precursor of PVPh-b-PS copolymer before hydrolysis reaction. Our results indicate that the micelles formed from PVPh-b-PS copolymers in acetone were more complicated than those prepared from PtBOS-b-PS copolymers in acetone because hydrogen bonding occurs in the micelle corona of the PVPh block. Finally, we also discussed the morphology transition when the self-association hydrogen bonding of PVPh block was destroyed by adding proton acceptor poly(4-vinylpyridine) (P4vp). (c) 2007 Elsevier Ltd. All rights reserved.Item type:Item, Polybenzoxazine as a mold-release agent for nanoimprint lithography(2007-05-22) ;Wang, Chih-Feng ;Chiou, Shih-Feng ;Ko, Fu-Hsiang ;Chen, Jem-KunChou, Cheng-TungOne of the most important tasks remaining to be resolved in nanoimprint lithography is the elimination of the resist sticking to the mold during demolding. Previously, the main approach was to apply a thin layer of fluorinated alkyl silane mold-release agent on the surface on the mold; however, this involves complicated steps and high costs. The low surface free energy material polybenzoxazine provides an efficient mold-release agent for silicon molds that is easier to process, costs less, and has no side reactions.