Browsing by Issue Date, starting with "2007-05-16"

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人類身體特徵姿勢資訊自動抽取系統
(2007-05-16)
廖弘源
;
陳敦裕
本發明之人類身體特徵姿勢抽取方法,係包括:由連續數位化畫面中抽取畫面中所含物件(object)之空間域特徵;利用機率計算方法,抽取該物件之形狀特徵;利用亂度計算方法偵測該連續畫面中所含之特徵姿勢資訊;除去冗餘之特徵姿勢;將所得之連串特徵姿勢與一碼書中所存之人類身體特徵姿勢樣型比對;及對配對之連串特徵姿勢進行編碼。
用以註冊雙網設備的電話號碼及IP位址於位置註冊器之方法
(2007-05-16)
張明峰
;
林一平
;
蔡文能
;
張弘鑫
本發明有關一種用以註冊雙網設備的電話號碼及IP位址於位置註冊器之方法,雙網設備向位置註冊器發出註冊訊息,位置註冊器驗證雙網設備的ID方式有二:第一方式為要求欲註冊的雙網設備撥打電話或傳送簡訊至一指定的來話號碼解碼器,再檢查解碼器所接收之號碼與註冊訊息之電話號碼是否相同;及第二方式為要求一指定話機撥打電話或傳送簡訊至欲註冊之雙網設備,該雙網設備再將收到的來電號碼送至位置註冊器接受鑑認,若通過上述驗證方式,則該雙網設備可在位置註冊器之資料庫內產生,修正或刪除其本身之至少含電話號碼及IP位址的資料。
Pressurized water extraction of polysaccharides as secondary metabolites from Lentinula edodes
(2007-05-16)
Lo, Tiffany Chien Ting
;
Tsao, Hsin Hsin
;
Wang, Ai Yih
;
Allen Chang, C.
;
生物科技學系
The suitability of pressurized water extraction (PWE) of crude polysaccharides as secondary metabolites from Lentinula edodes was investigated. A series of experiments were carried out to examine the effects of extraction times and pressures. The results indicated that the maximum recovery of polysaccharides was about 90% of the crude polysaccharides from mycelia pellets when the pressure was at 10.1 MPa for 70 min (28 degrees C). This was a drastic improvement over that of boiling water extraction (BWE) at 0.1 MPa for 40 min, which gave only 27.9% recovery. A nitroblue tetrazolium (NBT) reduction assay was used to examine the macrophage stimulating activities (MSA), and it was found that the PWE polysaccharides retained the MSA. The morphology of the macrophage cells treated by PWE polysaccharides was also examined and found to be similar to that of the positive control lipopolysaccharides treated. Finally, gel chromatographic and NMR experiments revealed that both PWE and BWE polysaccharides showed the presence of four similar molecular mass components and the alpha-(1 -> 4)-D-Glcp and beta-(1 -> 6)-D-Glcp linkage residues. The improved PWE efficiency is probably due to the possibility that under high pressure, the solid polysaccharide's hydrogen bonding is partially destroyed to increase structure elasticity and water solubility.
多層有機分子光電元件之製造方法
(2007-05-16)
孟心飛
;
洪勝富
;
許千樹
;
林世昌
;
廖華賢
提供一種在製造過程中不會產生層間互溶現象之高安定性多層有機分子光電元件、以及可利用較簡便的溶液製程製造多層有機分子光電元件之方法。
多波長發光元件之奈米粒結構及其製法
(2007-05-16)
陳衛國
;
柯文政
本發明提供一種具有奈米粒之多波長發光元件結構及製法,主要特徵係該發光元件結構具有多層堆疊主動層,該主動層可為量子井、單異質或雙異質接面結構;該主動層之每一對堆疊層包含低能隙位能井層4與高能隙位能障層3,該發光元件中之奈米粒5,係成長於多層堆疊主動層中較低能隙之位能井層4內;該每一奈米粒所發光波長可以藉由控制奈米粒之元素組成、奈米粒之尺寸及具有量子效應之奈米粒基態或激發態之能量躍遷,而獲得一種(含)以上之發光波長。該含奈米粒主動層之發光奈米粒所發射之波長可以為單一發光波長、兩種具互補色發光波長或三種三原色以上發光波長,以製作成多波長(包含白光光源)之發光元件;該結構更可以外加螢光體方式,利用上述該含奈米粒主動層之發光波長激發一種(含)以上螢光波長之螢光體,其中奈米粒所發光之波長可參與或不參與螢光體之螢光波長配色,組成具有多波長、白光或全彩之發光元件。
嵌入式網路操控之光流影像定位全方向運動系統
(2007-05-16)
吳立偉
;
鄭榮煌
;
張永融
;
胡竹生
本發明係為一種嵌入式網路操控之光流影像定位全方向運動系統,其係為以一本體上設置複數個運動單元以及至少一嵌入式網路操控系統,且在本體朝向地面的表面上設置有至少一光流感測器(Optical Flow Sensor),其中,在運動單元中包含一全向輪(Omni-Directional Wheel)及一馬達裝置;本體的運動係藉由運動單元提供動力,以光流感測器偵測運動狀態且產生光流感測資料,而嵌入式網路操控系統透過通訊網路,可與外部的資訊處理運算端傳輸運動資料與光流感測資料,同時,此運動系統更可連接週邊控制裝置,增加整體系統操控的便利性。由於本發明係利用光流影像偵測的定位方法,即使有輪子滑動、週遭環境變化、誤差累積等等干擾計算的因素產生,仍可獲得精準的定位結果。
Manufacturing multilayer conjugate polymer optoelectronics device by using buffer layer
(2007-05-17)
Meng, Hsin-Fei
;
Horng, Sheng-Fu
;
Hsu, Chain-Shu
;
Lin, Shi-Cheng
;
Liao, Hua-Hsien
A highly stable, multilayer organic molecular photoelectric element without interlayer miscibility phenomenon during manufacturing process, and a method for producing multilayer organic molecular photoelectric elements with simplified solution process are disclosed.
Ab initio study of the ClO+NH2 reaction: Prediction of the total rate constant and product branching ratios
(2007-05-17)
Zhu, R. S.
;
Lin, M. C.
;
交大名義發表
;
National Chiao Tung University
The mechanism for ClO + NH2 has been investigated by ab initio molecular orbital and transition-state theory calculations. The species involved have been optimized at the B3LYP/6-311+G(3df,2p) level and their energies have been refined by single-point calculations with the modified Gaussian-2 method, G2M(CC2). Ten stable isomers have been located and a detailed potential energy diagram is provided. The rate constants and branching ratios for the low-lying energy channel products including HCl + HNO, Cl + NH2O, and HOCl + (NH)-N-3 (X-3 Sigma(-)) are calculated. The result shows that formation of HCl + HNO is dominant below 1000 K; over 1000 K, Cl + NH2O products become dominant. However, the formation of HOCl + (NH)-N-3 (X-3 Sigma(-)) is unimportant below 1500 K. The pressure-independent individual and total rate constants can be expressed as k(1)(HCl + HNO) = 4.7 x 10(-8)(T-1.08) exp((-129)/(T)), k(2)(Cl + NH2O) = 1.7 x 10(-9)(T-0.62) exp((-24)/(T)), k(3)(HOCl + NH) = 4.8 x 10(-29)(T-5.11) exp((-1035)/(T)), and k(total) = 5.0 x 10(-9)(T-0.67) exp((-1.2)/(T)), respectively, with units of cm(3) molecule(-1) s(-1), in the temperature range of 200-2500 K.
Nanoparticle structure and manufacturing process of multi-wavelength light emitting device
(2007-05-17)
Chen, Wei-Kuo
;
Ke, Wen-Cheng
A structure of multi-wavelength light emitting device comprises multi-stacked active layer structure. Each stacked layer comprises lower energy bandgap well 4 and higher energy bandgap barrier layer 3 wherein at least one stacked layer in the device contains nanoparticles. As a result, the emitting wavelengths of the multi-stacked active layer structure consist parts (or all) of the emitting wavelengths come from the stack layers containing nanoparticles, and parts (or all) of the emitting wavelengths come from the stack layers not containing nanoparticles. In another embodiment, parts (or all) of the emitting wavelengths of the multi-stacked active layer structure can be also used to trigger one or more phosphorescences from the phosphors, thus the emitting wavelengths of such a phosphors converted light emitting device may come partially from the multi-stacked active layer itself and partially (or all) from the phosphors.
High-performance bottom-contact devices based on an air-stable n-type organic semiconductor N,N-bis (4-trifluoromethoxybenzyl)-1,4,5,8-naphthalene-tetracarboxylic di-imide
(2007-05-21)
Kao, Chia-Chun
;
Lin, Pang
;
Lee, Cheng-Chung
;
Wang, Yi-Kai
;
Ho, Jia-Chong
N,N-bis(4-trifluoromethoxybenzyl)-1,4,5,8-naphthalene-tetracarboxylic di-imide was applied to organic semiconductors for bottom-contact thin-film transistors. The carrier mobility was 1.6x10(-2) cm(2) V-1 s(-1), the threshold voltage (V-T) was +5.5 V, and the on/off current ratio was 8.6x10(5). Devices without any further surface treatments were tested in an ambient environment. The threshold voltage shift (Delta V-T) was verified by gate bias stress measurements. A prototype compound, N,N-bis(4-trifluoromethylbenzyl)naphthalene-1,4,5,8-tetracarboxylic di-imide, shows direct correlation to the bottom-contact device with the varied molecular structure. (c) 2007 American Institute of Physics.
Using double layer CoSi2 nanocrystals to improve the memory effects of nonvolatile memory devices
(2007-05-21)
Yang, F. M.
;
Chang, T. C.
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Liu, P. T.
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Yeh, P. H.
;
Chen, U. S.
The nonvolatile memory device with multilayer nanocrystals has advantages such as the memory effects can be increased by the increasing density of the nanocrystals and the whole retention characteristic can be improved. There are much more electrons that can be stored in the double layer than single layer nanocrystal memory device. The double layer CoSi2 nanocrystals have better retention characteristic than the single layer. The good retention characteristic of the double layer device is due to the Coulomb-blockage effects on the top layer nanocrystals from the bottom layer nanocrystals. So, the memory effects of the nonvolatile memory device can be improved by using the double layer nanocrystals. (c) 2007 American Institute of Physics.
Exciton energy transfer between optically forbidden states of molecular aggregates
(2007-05-21)
Kobayashi, Takayoshi
;
Taneichi, Takashi
;
Takasaka, Shigehiro
;
電子物理學系
;
先進超快雷射研究中心
3-ethyl-2-[3-(3-ethyl-2(3H)-benzoxazolylidene)-1-propenyl]benzoxazolium iodide (dye I) and pseudoisocyanine bromide are employed to form H aggregates as donors and J aggregates as acceptors. The energy of an H band of the H aggregates is higher than that of a J band of the J aggregates. It was confirmed that excitation of the H band does not emit fluorescence by comparison of excitation spectra of dye I H aggregates with that of dye I monomer. Absorption, fluorescence, and excitation spectra of spin-coated films of H aggregates mixed with various quantities of J aggregates have been observed. Excitation spectra probed at the J band are found to have a component of the H band. Fluorescence spectra originated from excitation of the H band are extracted and qualitatively analyzed. It is confirmed that excitation of the H band causes to emit fluorescence of a J band of the J aggregates. These phenomena show that exciton energy can transfer from the lowest energy in electronic states of the H aggregate, which state is optically forbidden, to electronic state of the J aggregate. (C) 2007 American Institute of Physics.
交大e-News第002期
(2007-05-21)
Secretariat
;
國立交通大學秘書室
Micellar morphologies of self-associated diblock copolymers in acetone solution
(2007-05-21)
Tung, Pao-Hsiang
;
Kuo, Shiao-Wei
;
Chen, Shih-Chien
;
Lin, Chen-Lung
;
Chang, Feng-Chih
We describe the synthesis and solution morphologies of poly(vinyl phenol-b-styrene) (PVPh-b-PS) micelles and the effects that changing the copolymer composition and concentration have on self-assembly structures of PVPh-b-PS in acetone (a good solvent for PVPh). These PVPh-b-PS copolymers aggregated into spherical, rod-like, and vesicular morphologies. The transformations of the PVPh-b-PS block copolymer micelles in acetone depended on a number of parameters, including the relative block lengths, their concentrations, and the degree of self-association through hydrogen bonding of the coronal PVPh chains. We also investigated the morphologies of the micelles formed from acetone solutions of poly (4-tert-butoxystyrene-b-styrene) (PtBOS-b-PS) copolymers having the same degree of polymerization as the precursor of PVPh-b-PS copolymer before hydrolysis reaction. Our results indicate that the micelles formed from PVPh-b-PS copolymers in acetone were more complicated than those prepared from PtBOS-b-PS copolymers in acetone because hydrogen bonding occurs in the micelle corona of the PVPh block. Finally, we also discussed the morphology transition when the self-association hydrogen bonding of PVPh block was destroyed by adding proton acceptor poly(4-vinylpyridine) (P4vp). (c) 2007 Elsevier Ltd. All rights reserved.
Polybenzoxazine as a mold-release agent for nanoimprint lithography
(2007-05-22)
Wang, Chih-Feng
;
Chiou, Shih-Feng
;
Ko, Fu-Hsiang
;
Chen, Jem-Kun
;
Chou, Cheng-Tung
One of the most important tasks remaining to be resolved in nanoimprint lithography is the elimination of the resist sticking to the mold during demolding. Previously, the main approach was to apply a thin layer of fluorinated alkyl silane mold-release agent on the surface on the mold; however, this involves complicated steps and high costs. The low surface free energy material polybenzoxazine provides an efficient mold-release agent for silicon molds that is easier to process, costs less, and has no side reactions.
Dynamic structure factor of liquid Ga close to the melting point: spectral linewidth at high momentum transfer
(2007-05-23)
Tsai, K. H.
;
Wu, Ten-Ming
;
Tsay, Shiow-Fon
;
Yang, Tzong-Jer
;
電子物理學系
By simulating an interatomic pair potential obtained from the first-principles generalized energy-independent nonlocal model-pseudopotential (GEINMP) theory, we have reproduced the high-wavevector shoulder in the static structure factor and the recently observed anomaly in the linewidth of the dynamic structure factor of liquid Ga close to the melting point. Our results indicate that the two anomalies have the same physical origin, which is associated with the Friedel oscillations induced by conduction electrons. The anomaly in the dynamics can be well described by the revised Enskog theory for the hard-sphere (HS) system, with the effective HS diameter determined by the position at the first peak of the radial distribution function. We interpret the occurrence of the anomaly in the dynamics by the physical picture of cage diffusion.
Dissociation of energy-selected CH3CN+ in a region 15.1-16.5 eV: Vibrationally enhanced dissociation and mechanisms
(2007-05-25)
Huang, Chuan-Keng
;
Lin, I.-Feng
;
Chiang, Su-Yu
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應用化學系
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Department of Applied Chemistry
Threshold photoelectron-photoion coincidence spectra of CH3CN were measured in a region 15.1-16.5 eV. We observed a small vibrational enhancement on dissociation of CH3CN+ and obtained kinetic energy releases for channels C2HN+ + H-2 and CH2+ + HCN. The kinetic energies released in channel C2HN+ + H-2 are substantial; a linearly extrapolated dissociation threshold of 14.68 +/- 0.01 eV agrees with a Gaussian-3 B3LYP prediction 14.70 eV for formation of HCCN+ + H-2. In contrast, the small releases for channel CH2+ + HCN agree with a statistical calculation. We describe a plausible dissociation mechanism with the Gaussian-3 B3LYP method to rationalize experimental results. (c) 2007 Elsevier B.V. All rights reserved.
Contact to ZnO and intrinsic resistances of individual ZnO nanowires with a circular cross section
(2007-05-28)
Lin, Yen-Fu
;
Jian, Wen-Bin
;
Wang, C. P.
;
Suen, Yuen-Wuu
;
Wu, Zhong-Yi
Single crystalline ZnO nanowires (NWs) with a circular cross section and similar to 40 nm in diameter have been synthesized and utilized to fabricate two-contact ZnO NW devices. The electrical properties of the NW devices can be categorized into two classes according to the magnitude of their room-temperature resistances. I-V curves of low-resistance devices exhibit downward bending features and their temperature dependent resistances demonstrate thermal activation transport in the ZnO NWs. The high-resistance NW devices can be modeled as back-to-back Schottky contacts and the electron transport through the contacts reveals a variable-range-hopping mechanism. (C) 2007 American Institute of Physics.
Quantum limit of optimum four-level ASK signals with direct detection optically preamplified receivers
(2007-05-28)
Peng, Wei-Ren
;
Chi, Sien
;
光電工程學系
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Department of Photonics
We analytically obtain the exact fundamental limit of 4- level amplitude shifted keying formats (4ASK) with direct detection optically preamplified receivers. The optimum multilevel spacing and the corresponding decision thresholds, which depend both on the signal to noise ratio and optical bandwidth, are obtained numerically considering the Chis-quared distribution of each level. The quantum limit under the optimum level spacing is 127.5 photons/bit, which is about 0.2 dB smaller than the results by the Gaussian approximation. Over a broad range of the signal to noise ratio and the optical bandwidth, we have found that not only the bit error rate but also the optimum level spacing are well predicted by Gaussian method, although the three decision thresholds are all underestimated. (C) 2007 Optical Society of America.
Near-infrared femtosecond laser crystallized poly-Si thin film transistors
(2007-05-28)
Wang, Yi-Chao
;
Shieh, Jia-Min
;
Zan, Hsiao-Wen
;
Pan, Ci-Ling
;
光電工程學系
Polycrystalline silicon (poly-Si) thin film transistors (TFTs) fabricated by near-infrared femtosecond laser annealing (FLA) are demonstrated. The FLA-annealed poly-Si channels exhibit low tail-state, deep-state, and midgap-state densities of grain traps. Characteristics such as field-effect mobility, threshold voltage, and subthreshold slope for FLA-annealed poly-TFTs are comparable to those of conventional approaches. A wide process window for annealing laser fluences was confirmed by examining the changes in electrical parameters for transistors with various channel dimensions. (C) 2006 Optical Society of America.