Browsing by Issue Date, starting with "2007-12-15"

Now showing 1 - 20 of 58480

管管作品三首
(2007-12-15)
管管
Microstructure evolution and dielectric properties of Ba0.7Sr0.3TiO3 parallel plate capacitor with Cr interlayer
(2007-12-15)
Ho, Chia-Cheng
;
Chiou, Bi-Shiou
;
Chang, Li-Chun
;
電子工程學系及電子研究所
;
Innovative Packaging Research Center
The microstructure, crystalline phase, surface morphology, and dielectric properties of a sandwich structure of Ba0.7Sr0.3TiO3/Cr/ Ba0.7Sr0.3TiO3 (BST/Cr/BST) dielectric are characterized to understand the influence of the nano-Cr interlayer. BST dielectrics inserted with Cr film of thickness ranged from 2 nm to 15 nm all show the crystalline cubic phase. However, TiO2 layer is formed on the upper BST layer after the BST/Cr/BST dielectrics are annealed at 900 degrees C in O-2 atmosphere for one hour. In this study, TEM, AFM, SEM, X-ray diffraction, and AES are employed to investigate the microstructure evolution of the BST/Cr/BST dielectrics after annealing. The correlations between the microstructure and the dielectric properties of the Pt/BST/Cr/BST/Pt capacitors with various Cr thicknesses are explored. (C) 2007 Elsevier B.V. All tights reserved.
Resistive switching properties of sol-gel derived Mo-doped SrZrO3 thin films
(2007-12-15)
Lin, Chih-Yang
;
Lin, Chun-Chieh
;
Huang, Chun-Hsing
;
Lin, Chen-Hsi
;
Tseng, Tseung-Yuen
Hysteretic I-V characteristics of the SrZrO3 (SZO) thin films with various Mo-doping concentrations were investigated in the study. The 0.2 mol% Mo-doping SZO-based memory device showed excellent resistive switching characteristics, and the resistive switching can be operated over 300 times during successive operation. Both high and low conductive states were stable over 10(4) s. Multi-bit behavior was investigated by dc voltage sweeping with different spans of voltage scan for OFF-process and by various OFF-pulse voltages as well. The endurance test can be over 1000 times with no data loss found. The experimental results showed high potential for nonvolatile memory application. (c) 2007 Published by Elsevier B.V.
Performance of sol-gel deposited Zn1-xMgxO films used as active channel layer for thin-film transistors
(2007-12-15)
Tsay, Chien-Yie
;
Cheng, Hua-Chi
;
Wang, Min-Chi
;
Lee, Pee-Yew
;
Chen, Chia-Fu
ZnO thin-film transistors (TFTs) have attracted considerable R&D interest due to their high transparency and low photosensitivity compared with typical a-Si:H TFTs. The electrical characteristics of ZnO thin films may be controlled by doping with ternary element, for instance Al, Ga, In, Mg, Zr, etc. In this study, Zn1-x ,MgxO (x= 0 to 0.36) thin films were deposited on glass substrates by spin coating. The as-deposited films were baked at 300 degrees C for 10 min and then annealed at 500 degrees C for I h in air. The results show that, addition of Mg-species in ZnO films markedly enhanced the uniformity of film thickness and improved optical properties. The Zn0.8Mg0.2O film exhibited the best transparency of 92%, an increase of similar to 15% over a pure ZnO film, and the rms roughness value decreased to 1.63. The Zn1-x .,MgxO TFTs were demonstrated to have n-type enhancement behavior. The optimum device with Zn0.8Mg0.2O channel layer had a field-effect mobility of 0.1 cm(2) /V s, a threshold voltage of 6.0 V, and an on/off ratio more than 10(7). (c) 2007 Elsevier B.V. All rights reserved.
管管作品三首
(2007-12-15)
管管
管管作品三首
(2007-12-15)
管管
管管作品三首
(2007-12-15)
管管
Analytical solution for groundwater flow in an anisotropic sloping aquifer with arbitrarily located multiwells
(2007-12-15)
Chang, Ya-Chi
;
Yeh, Hund-Der
;
環境工程研究所
;
Institute of Environmental Engineering
This paper presents a new analytical solution to describe the hydraulic head distribution and flow system in an anisotropic unconfined aquifer with a sloping bed and arbitrarily located multiwells under transient recharge. Unlike the existing analytical solutions for delineating the capture zones, the solution presented in this study is easy and convenient to calculate flow field in some complicated systems, and it can provide useful information for the pump-and-treat design. In addition, the presented solution may have the possible application in evaluating the sensitivity of hydrogeological parameters, or estimating the hydraulic parameters when coupled with an optimization approach to analyze the aquifer data. (c) 2007 Elsevier B.V. All rights reserved.
管管作品三首
(2007-12-15)
管管
Fort-nation of stacked nickel-silicide nanocrystals by using a co-mixed target for nonvolatile memory application
(2007-12-15)
Chen, Wei-Ren
;
Chang, Ting-Chang
;
Liu, Po-Tsun
;
Tu, Chun-Hao
;
Chi, Feng-Weng
The formation of stacked nickel-silicide nanocrystals by using a co-mixed target is proposed in this paper. High resolution transmission electron microscope analysis clearly shows the stacked nanocrystals embedded in the silicon oxide after rapid thermal oxidation. The obvious memory window can be used to define "1" and "0" states at low voltage operation. In addition, the program/erase characteristics have different charge/discharge efficiency due to the effect of stacked structure. Furthermore, good endurance and retention characteristics are exhibited for nonvolatile memory application. Besides, this technology is suitable for the fabrication of current nonvolatile memory and application of low power device. (C) 2007 Elsevier B.V. All rights reserved.
The globally Bi-3*-connected property of the honeycomb rectangular torus
(2007-12-15)
Teng, Yuan-Hsiang
;
Tan, Jimmy J. M.
;
Hsu, Lih-Hsing
;
資訊工程學系
;
Department of Computer Science
The honeycomb rectangular torus is an attractive alternative to existing networks such as mesh-connected networks in parallel and distributed applications because of its low network cost and well-structured connectivity. Assume that m and n are positive even integers with n >= 4. It is known that every honeycomb rectangular torus HReT(m, n) is a 3-regular bipartite graph. We prove that in any HReT(m, n), there exist three internally-disjoint spanning paths joining x and y whenever x and y belong to different partite sets. Moreover, for any pair of vertices x and y in the same partite set, there exists a vertex z in the partite set not containing x and y, such that there exist three internally-disjoint spanning paths of G - {z} joining x and y. Furthermore, for any three vertices x, y, and z of the same partite set there exist three internally-disjoint spanning paths of G - {z} joining x and y if and only if n >= 6 or m = 2. (C) 2007 Elsevier Inc. All rights reserved.
管管作品三首
(2007-12-15)
管管
管管作品三首
(2007-12-15)
管管
Raman scattering of longitudinal-optical-phonon-plasmon coupling in Cl-doped ZnSe under high pressure
(2007-12-15)
Lin, Y. C.
;
Chiu, C. H.
;
Fan, W. C.
;
Chia, C. H.
;
Yang, S. L.
The vibrational, electronic, and crystalline properties of n-type chlorine-doped ZnSe (ZnSe:Cl) layers with a carrier concentration from 8.2x10(15) to 1.8x10(18) cm(-3) are studied by Raman spectroscopy. The spectral line shapes of the longitudinal-optical-phonon and plasmon coupling mode are analyzed using the Raman scattering efficiency and the dielectric function to obtain the electron densities and mobility. The splitting of the transverse-optical (TO) phonon and the redshift of the chlorine-related impurity vibration mode are clearly observed when pressure is applied. The semiconductor-to-metal phase transition pressure of ZnSe:Cl layers declines as the carrier concentration increases, indicating that n-type doping reduces crystal stability. Additionally, the pressure-induced weakening of the longitudinal-optical-phonon-plasmon coupling efficiency suggests that pressure tends to degrade the n-type characteristic of ZnSe:Cl because of the emergence of the new deep donorlike state. (c) 2007 American Institute of Physics.
Characteristics of poly-Si TFT combined with nonvolatile SONOS memory and nanowire channels structure
(2007-12-15)
Chen, Shih-Ching
;
Chang, Ting-Chang
;
Liu, Po-Tsun
;
Wu, Yung-Chun
;
Lin, Po-Shun
In this work, we study a polycrystalline silicon thin-film transistor (poly-Si TFT) combined with a silicon-oxide-nitride-oxide-silicon (SONOS) stack gate dielectric and nanowire channels structure for the applications of transistor and nonvolatile memory. The proposed device named with NW SONOS-TFT has superior electrical characteristics of transistor and also can exhibit high program/erase (P/E) efficiency under adequate bias operation. The V-th decreases from 2.45 V to 1.76 V and subthreshold swing reduces from 0.57 V/decade to 0.42 V/decade. The programming V-th shift is improved from 2.2 V to 3.3 V at 14 V for 1 s and the erasing V-th shift is improved from -0.3 V to -1.3 V at -14 V for 1 s. The dramatic improvement can be attributed to the tri-gate structure and corner effect. In addition, the memory device has a promising data retention behavior at 85 degrees C and a 0.8 V memory window after 5 x 10(3) P/E cycles operations. Hence, the NW SONOS-TFT is suitable for application in the future system-on-panel display. (C) 2007 Elsevier B.V. All rights reserved.
管管作品三首
(2007-12-15)
管管
Formation of germanium nanocrystals by rapid thermal oxidizing SiGeO layer for nonvolatile memory application
(2007-12-15)
Chen, Wei-Ren
;
Chang, Ting-Chang
;
Liu, Po-Tsun
;
Tu, Chun-Hao
;
Yeh, Jui-Lung
A new method to fabricate Ge nanocrystals by rapid thermal oxidizing SiGeO layer for nonvolatile memory application was investigated in this study. The oxidation process nucleated the Ge nanocrystals embedded in the dielectric layer was clearly observed by transmission electron microscope analysis. Moreover, an over-oxidation phenomenon for the formation of GeO2 in this work was found at higher temperature oxidation according to the X-ray photoelectron spectroscopy analysis. The obvious memory window was found in the capacitance-voltage hysteresis curve, and the program efficiency of holes was superior to electrons due to the electronic affinity of GeO2 smaller than silicon substrate for a structure of Ge nanocrystals surrounded with GeO2 layer. Furthermore, the Ge nanocrystals surrounded with GeO2 layer structure has good retention time and endurance. (c) 2007 Elsevier B.V All rights reserved.
Reducing exciton-longitudinal optical phonon coupling with increasing Mg incorporation in MgZnO powders
(2007-12-15)
Pan, Ching-Ju
;
Lin, Kuo-Feng
;
Hsu, Wei-Tse
;
Hsieh, Wen-Feng
;
光電工程學系
The coupling between exciton and longitudinal optical (LO) phonon was investigated in the use of temperature-dependent photoluminescence from Mg(x)Zn(1-x)O powders prepared by a sol-gel method in the range of 0 <= x <= 0.05. The exciton binding energy increases to 73 meV for 5 at. % Mg incorporated powders. The strength of exciton-LO phonon coupling was deduced from the energy shift of exciton emission with temperature variation. The increase of the exciton binding energy results from a decrease of the exciton Bohr radius that is responsible for reducing the coupling strength of exciton-LO phonon as increasing Mg content. (c) 2007 American Institute of Physics.
微探針陣列結構及其製造方法
(2007-12-16)
邱俊誠
;
張志瑋
本發明提供一種具自我固定功能之微探針陣列結構及其製造方法,用以感測各種生理訊號,其特色在於於蝕刻過程中控制蝕刻參數,製作出底部截面積縮小之微探針結構,使微探針可穩固於皮膚組織內,並於微探針上形成一導電層以供感測訊號之用。本發明更提出一種可使微探針間電性分離之設計,使微探針陣列可用於多種生理訊號的量測,同時也可作為刺激源使用。
「這位太太」大聲唱出青澀情結
(2007-12-16)
盧沛樺
;
Department of Communication and Technology
;
傳播與科技學系
地下樂團出頭天，兩位「太太」的故事與歌