Browsing by Issue Date, starting with "2008-01-17"

Now showing 1 - 20 of 56334

Soluble phenanthrenyl imidazole for photo-electrical conversion of solar cell
(2008-01-17)
Wei, Kung-Hwa
;
Chang, Yao-Te
A novel material of phenanthrenyl imidazole is applied to a solar cell. A phenanthrenyl-imidazole moiety is introduced to reduce a power band of a polymer, so that a photocurrent and an optoelectrical transformation efficiency are improved. Thus, a polymer having the novel material is very suitable to be used in a solar cell to acquire a high optoelectrical transformation efficiency.
GaInP/GaAs HBT wideband transformer Gilbert downconverter with low voltage supply
(2008-01-17)
Tseng, S. -C.
;
Meng, C. C.
;
Wu, C. -K.
;
電信工程研究所
;
Institute of Communications Engineering
A low-voltage wideband downconverter along with an integrated transformer RF balun using the 2 mu m GaInP/GaAs HBT technology is demonstrated. This transformer is a symmetric type and plays a role as a single-to-differential balun. Without the parasitic between the transformer and the substrate, the transformer can work at higher frequencies. This transformer downconverter operates from 1.5 to 14 GHz with around 20 dB conversion gain and 1.8 GHz IF 3 dB bandwidth. The frequency range of the mixing operation is wide and covers the digital video broadcasting via satellite (DVB-S) bands. This mixer is therefore useful for DVB-S applications.
Illuminance formation and color difference of mixed-color light emitting diodes in a rectangular light pipe: an analytical approach
(2008-01-20)
Cheng, Chu-Ming
;
Chern, Jyh-Long
;
光電工程學系
;
Department of Photonics
We developed an analytical method of illuminance formation for mixed-color LEDs in a rectangular light pipe in order to derive American National Standards Institute (ANSI) light uniformity, ANSI color uniformity, and color difference of light output using photometry, nonimaging, and colorimetry. The analytical results indicate that the distributions of illuminance and color difference vary with different geometric structures of light pipes and the location of the light sources. It was found that both the ANSI light and the ANSI color uniformity on the exit plane of the light pipe are reduced exponentially with the increase in length of the light pipe. It is evident that a length scale L/A greater than unity assures that the mixed-color LED sources on the entrance plane are uniformly illuminated with acceptable uniform brightness and color on the exit plane of the rectangular light pipe, where L is the length of the light pipe, and A is a constant, which is a geometric parameter for the scale unit of the light pipe's input face. Furthermore, the ANSI light uniformity can be minimized, and the ANSI color uniformity can be maximized under the condition of multilight-source locations P = Q = +/- A/4, where P and Q are the coordinates along the long axis and the short axis, respectively, with one being the entrance plane of the light pipe. We can conclude that the optimum form factor of the light pipe is a square shaped cross section, with the length scale L/A being equal to unity and with multilight sources located individually on positions of A/4 in order to achieve very uniform illuminations with the highest light efficiency and compact package for the optical system with mixed-color LEDs, where L is the length of the light pipe. (C) 2008 Optical Society of America.
Carrier-mediated exchange coupling and fermi surface topology
(2008-01-20)
Huang, Wen-Min
;
Lai, Hsin-Hua
;
Chang, Cheng-Hung
;
Lin, Hsiu-Hau
;
物理研究所
We investigate the carrier-mediated exchange coupling between two ferromagnets, sandwiching an intermediate thin layer with Rashba interaction. The effective exchange coupling is obtained by integrating out the itinerant carriers. It turns out that the magnetic trends depend sensitively upon the topology of the Fermi surface. As the topology changes from "wedding cake" to "donut", the mediated exchange goes from the oscillatory Ruderman-Kittel-Kasuya-Yosida to the non-collinear spiral interactions accordingly. It is rather surprising that the Fermi surface topology determines which type of magnetic interaction becomes dominant. Finally, we also discuss potential applications for carrier-mediated exchange coupling across the junction.
The cutoff phenomenon for ergodic Markov processes
(2008-01-20)
Chen, Guan-Yu
;
Saloff-Coste, Laurent
;
應用數學系
;
Department of Applied Mathematics
We consider the cutoff phenomenon in the context of families of ergodic Markov transition functions. This includes classical examples such as families of ergodic finite Markov chains and Brownian motion on families of compact Riemannian manifolds. We give criteria for the existence of a cutoff when convergence is measured in L(p)-norm, 1 < p < infinity. This allows us to prove the existence of a cutoff in cases where the cutoff time is not explicitly known. In the reversible case, for 1 < p <= infinity, we show that a necessary and sufficient condition for the existence of a max-L(p) cutoff is that the product of the spectral gap by the max-L(p) mixing time tends to infinity. This type of condition was suggested by Yuval Peres. Illustrative examples are discussed.
Side-wall effects on the bifurcation of the flow through a sudden expansion
(2008-01-20)
Tsui, Yeng-Yung
;
Wang, Hong-Wen
;
機械工程學系
;
Department of Mechanical Engineering
Three-dimensional computations have been performed to study the flow through a symmetric sudden expansion with an expansion ratio of 3 at low Reynolds numbers. The aspect ratio of the flow channel is allowed to vary within a wide range to examine its influence on the flow which bifurcates from a symmetric state to an asymmetric state. The results reveal that the critical Reynolds number of the symmetry-breaking bifurcation increases while the aspect ratio is reduced. The flow behaviour near the side walls is illustrated by using limiting streamlines. The origin of the Singular points identifiable on the side wall can be traced back to the recirculating flows and the relevant reattachment/separation points in the core of the channel. It is seen that the determination of the exact critical Reynolds number is not trivial because it depends on how to define asymmetric flow. Computations have also been conducted to show that a slight asymmetry in the channel geometry causes a smooth transition from symmetric to non-symmetric states. Copyright (C) 2007 John Wiley & Sons, Ltd.
Optically modulated internal strain in InGaN quantum dots grown on SiNx nano masks
(2008-01-21)
Chang, H. J.
;
Chen, T. T.
;
Huang, L. L.
;
Chen, Y. F.
;
Tsai, J. Y.
Optically modulated internal strain has been observed in InGaN quantum dots (QDs) deposited on SiNx nano masks. The modulated internal strain can induce a number of intriguing effects, including the change of refractive index and the redshift of InGaN A(1)(LO) phonon. The underlying mechanism can be well accounted for in terms of the variation of internal strain through the converse piezoelectric effect arising from the screening of the internal electric field due to spatial separation of photoexcited electrons and holes. Our results point out a convenient way for the fine tuning of physical properties in nitride-based semiconductor nanostructures, which is very important for high quality optoelectronic devices. (c) 2006 Optical Society of America.
交大e-News第018期
(2008-01-21)
Secretariat
;
國立交通大學秘書室
主动式可调变电流的薄膜晶体管电路结构
(2008-01-23)
林彦仲
;
黄建智
;
杨佳峰
;
王俊雄
;
谢汉萍
本发明涉及一主动式可调变电流的薄膜晶体管电路结构，特别是应用在主动式发光组件与其显示阵列面板的画素电路。本发明结构包括电流源、数据线、扫描线、直流电压信号线、多个储存电容、多个开关晶体管与一驱动晶体管。其中多个储存电容形成串联结构，其功能为薄膜晶体管电路结构由开启期间转为关闭期间时，其中一储存电容因负回授效应而使得该多个储存电容间的节点的电位下降，进而使得流经发光组件的电流下降，以实现电流调变功能。多个开关晶体管功能为开关功能，以作为控制该电流源的电流方向。
Influence of molecular dipoles on the photoluminescence and electroluminescence of dipolar spirobifluorenes
(2008-01-24)
Chiang, Chih-Long
;
Tseng, Shih-Min
;
Chen, Chin-Ti
;
Hsu, Chao-Ping
;
Shu, Ching-Fong
This Full Paper investigates a series of strongly fluorescent donor-acceptor-substituted spirobifluorene compounds, red 2-diphenylamino-7-(2,2-dicyanovinyl)-9,9'-spirobifluorene (DCV), green 2-diphenylamino-9,9'-spirobifluorene7-carxoxaldehyde (CHO), and blue 2-diphenylamino-7-(2,2-diphenylvinyl)-9,9'-spirobifluorene (DPV), together with their spiro-linked "dimeric" analogs, 2DCV, 2,2'-bis(diphenylamino)-9,9'-spirobifluorene-7,7'-dicarboxaldehyde (2CHO), and 2,2'-bis(diphenylamino)-7,7'bis(2,2-diphenylvinyl)-9,9'-spirobifluorene (2DPV), respectively. The emission optical density and, hence, the intensity of photoluminescence (PL) or electroluminescence (EL) of the "dimeric" analogs is presumed to increase, which is beneficial for organic light-emitting diode (OLED) applications. The physical properties, including the dipole moments obtained from quantum chemistry calculations, emission solvatochromism, fluorescence quantum yield (Of) as well as the EL of these six spirobifluorene compounds have been examined in detail. We found that Of as well as OLED performance (EL efficiency and intensity) of the strongly dipolar DCV decrease significantly in the "dimeric" analog 2DCV, but less so in the moderately dipolar CHO and 2CHO, and only slightly in the weakly dipolar DPV and 2DPV. This is parallel to the intramolecular dipole moment, which is large for 2DCV, medium for 2CHO, and very small for 2DPV. Here, we show for the first time systematically that the luminescence intensity is closely correlated with the local electric field induced by the molecular dipole. A strong electric field may facilitate radiationless decay channels with a charge-transfer nature, leading to a high quenching rate. Consistent with this conclusion, which is derived from the red DCV/2DCV and green CHO/2CHO, our new blue fluorophore DPV with an essentially zero dipole moment has successfully achieved one of the best electrofluorescent blue OLEDs. At the same time, by doping the highly dipolar DCV into an isolated environment with the low-polarity Alq(3) as the host matrix, we obtained a very high performance of saturated yellow OLEDs as well, This is possibly due to the reduction of emission-quenching dipoles from the neighboring molecules. Our results have provided an important insight in designing luminescent materials, as follows: molecular dipole moments should be kept at a low magnitude to avoid quenching induced by a strong local electric field in the chromophore.
Electrical transport studies of individual IrO2 nanorods and their nanorod contacts
(2008-01-30)
Lin, Y. H.
;
Sun, Y. C.
;
Jian, W. B.
;
Chang, H. M.
;
Huang, Y. S.
We have studied the electrical transport properties of individual single-crystalline IrO2 nanorods prepared by the metal-organic chemical vapour deposition method. With the help of the standard electron-beam lithographic technique, individual nanorods are contacted by Cr/Au submicron electrodes from above. Utilizing two-probe, three-probe and four-probe measurement configurations, not only the intrinsic electrical transport properties of the individual nanorods but also the electronic contact resistances, Rc(T), have been determined from 300 K down to liquid-helium temperatures. Our measured resistivity behaviour of the nanorods is in close agreement with the current theoretical understanding of this rutile material. On the other hand, we found that the temperature behaviour of the electronic contact resistance obeys the law log R-C alpha T-1/2 over an extremely wide temperature range, from approximately 100 K down to liquid-helium temperatures. This latter conduction process is ascribed to the hopping of electrons through nanoscale Cr granules and/or an amorphous coating incidentally formed at the interface between the submicron Cr/Au electrode and the nanorod.
Berkovich nanoindentation and deformation mechanisms in GaN thin films
(2008-01-30)
Tsai, Chien-Huang
;
Jian, Sheng-Rui
;
Juang, Jenh-Yih
;
電子物理學系
;
Department of Electrophysics
The deformation mechanisms of GaN thin films obtained by metal-organic chemical vapor deposition (MOCVD) method were studied using nanoindentation with a Berkovich diamond indenter, micro-Raman spectroscopy and the cross-sectional transmission electron microscopy (XTEM) techniques. Due to the sharpness of the tip of Berkovich indenter, the nanoindentation-induced deformation behaviors can be investigated at relatively lower load and, hence, may cover wider range of deformation-related phenomena over the same loading range. The load-displacement curves show the multiple "pop-ins" during nanoindentation loading. No evidence of nanoindentation-induced phase transformation and cracking patterns were found up to the maximum load of 300 mN, as revealed from the micro-Raman spectra and the scanning electron microscopy (SEM) observations within the mechanically deformed regions. In addition, XTEM observation performed near the cross-section of the indented area revealed that the primary deformation mechanism in GaN thin film is via propagation of dislocations on both basal and pyramidal planes. The continuous stiffness measurement (CSM) technique was used to determine the hardness and Young's modulus of GaN thin films. In addition, analysis of the load-displacement data reveals that the values of hardness and Young's modulus of GaN thin films are 19 +/- 1 and 286 +/- 25 GPa, respectively. (C) 2007 Elsevier B.V. All rights reserved.
Electrical transport studies of individual IrO(2) nanorods and their nanorod contacts
(2008-01-30)
Lin, Y. H.
;
Sun, Y. C.
;
Jian, W. B.
;
Chang, H. M.
;
Huang, Y. S.
We have studied the electrical transport properties of individual single-crystalline IrO(2) nanorods prepared by the metal-organic chemical vapour deposition method. With the help of the standard electron-beam lithographic technique, individual nanorods are contacted by Cr/Au submicron electrodes from above. Utilizing two-probe, three-probe and four-probe measurement configurations, not only the intrinsic electrical transport properties of the individual nanorods but also the electronic contact resistances, Rc(T), have been determined from 300 K down to liquid-helium temperatures. Our measured resistivity behaviour of the nanorods is in close agreement with the current theoretical understanding of this rutile material. On the other hand, we found that the temperature behaviour of the electronic contact resistance obeys the law log R(C) alpha T(-1/2) over an extremely wide temperature range, from approximately 100 K down to liquid-helium temperatures. This latter conduction process is ascribed to the hopping of electrons through nanoscale Cr granules and/or an amorphous coating incidentally formed at the interface between the submicron Cr/Au electrode and the nanorod.
Electrochemical fabrication and magnetic properties of highly ordered silver-nickel core-shell nanowires
(2008-01-31)
Lin, Shih-Chin
;
Chen, San-Yuan
;
Chen, Yun-Tien
;
Cheng, Syh-Yuh
;
交大名義發表
Ordered silver-nickel core-shell nanowire arrays were successfully fabricated by electrodeposition. The ordered silver nanowire arrays embedded in a porous alumina template were first fabricated from an aqueous solution of Ag(NO3)(2) and Ac(NH3). After removing out the template, the obtained silver nanowire arrays were subsequently electrodeposited with nickel at 1.6-2.6 V and 60 degrees C using the electrolyte composed of NiSO4, NiCl2 and H3BO3. Transmission electron microscopy observation revealed that a similar to 15 nm thick nickel film was coated on the surface of the silver nanowires with about 200 nm in diameter. It was found that the silver nanowires with nickel coating showed enhanced magnetic properties in comparison to that of pure silver nanowires. The magnetic force microscope image of silver-nickel core-shell nanowires showed magnetic domain state. In addition, the hysteresis loops of the silver-nickel nanowire arrays showed a coercive field of 180 Oe, almost independent of the applied magnetic field. However, it was observed that a larger magnetic domain was found in parallel direction than that in perpendicular direction. (c) 2007 Elsevier B.V. All rights reserved.
Probing a nonuniform two-dimensional electron gas with random telegraph signals
(2008-02-01)
Chen, Ming-Jer
;
Lee, Chien-Chih
;
Lu, Ming-Pei
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
We observe a sequence of two-level random telegraph signals (RTSs) in the drain/source current of a 1.7 nm gate oxide silicon metal-oxide-semiconductor field-effect transistor. The RTS magnitude is transformed into the apparent Debye length around a negatively charged oxide trap. We achieve excellent reproduction of the Debye data (40 down to 5 nm). This leads to the quantified area spanned by the dominant conductive percolation paths in the underlying two-dimensional electron gas (2DEG). We find that most of the 2DEG in inversion is recovered in a largest threshold voltage sample (similar to 0.35 V), while for the lowest threshold (similar to 0.15 V), a certain conductive filament is likely to occur. The gate direct tunneling current further corroborates the percolation picture. (c) 2008 American Institute of Physics.
BaMgAl10O17 : Eu blue phosphors with MgO coating and microwave irradiation
(2008-02-01)
Kuo, Kuan-Ting
;
Lee, Shu-Ping
;
Chen, San-Yuan
;
Cheng, Bing-Ming
;
Lu, Hsiao-Chi
Europium-activated barium magnesium aluminate (BaMgAl10O17:Eu (BAM)) phosphor particles were modified by surface coating with MgO using a polyol method. The photoluminescence (PL) properties of the MgO-coated BAM phosphors showed slightly improved blue-emission intensity compared to the unmodified ones, and reached a stronger peak intensity with 5.25% MgO coating, under vacuum ultraviolet (VUV) 147 nm excitation. Upon microwave irradiation on the MgO-coated BAM phosphors, the PL properties of the MgO-coated phosphors exhibited a much enhanced relative PL ratio, and a maximum relative PL ratio can be achieved when as high as 10.5% MgO was deposited on the phosphor surface. However, for mechanically ground phosphor powder, it was found that although the intensity of the MgO-coated BAM turned stronger with increasing MgO concentration under microwave irradiation, the purity of the resulting luminescence was slightly disrupted by the presence of a new peak near 470 nm, corresponding to BaMg3Al14O25 compound. (C) 2007 Elsevier Ltd. All rights reserved.
石牌再添社區活動平台－陽明人參與北投扶輪社活動側寫
(國立陽明大學, 2008-02-01)
吳小瑄
2008年1月13日北投扶輪社於本校生活文化廣場舉辦「『樹之饗宴－音樂嘉年華會』社區服務日」活動，主題為「感性、熱情、健康、希望」，目的在與社區組織及北投居民友善互動，推廣植樹環保之重要概念，並傳達北投扶輪社對於服務社會的熱情與理念。當日上午8點30分開始，北投扶輪社先率眾整理社區環境，於致遠三路及東華街入口之公園舉行櫻花捐贈及揭碑儀式，隨後便將活動重心移至本校生活文化廣場，展開熱鬧的抽獎與表演節目。本次活動中，除了舉辦公益活動已行之有年的北投扶輪社，與熱心在地事務的協辦伙伴，如東華里、立農里、永明里等里辦公事及社區發展協會等單位之外，最引陽明人注意的，莫過於陽明社團的精彩表演。經招募後共計5個社團參與表演並擔任助理主持工作，包含有愛杏管弦樂團、國標社、熱舞社、手語社與吉他社。熱舞社同學在會場的賣力演出生活文化廣場位於校門東側，是陽明人上下山必經之地，亦是石牌人親山步道的必跨門檻，對內為校內熱門之學生活動場地，面外則剛好是石牌人生活圈，地理位置不但特殊而且重要，早已成為地標之一。正因地點合適，活動可說未演先轟動，在北投扶輪社強力宣傳下，當日現場人潮不絕，中央廣場中跳蚤市場的叫賣聲更引來川流不息的人潮。本次活動中，露天舞台首先上場的是充滿動感節奏的熱舞社，連續兩首Hip Hop熱舞再加上社團老骨頭相挺演出之故事型勁曲「有壞人，殺光他們」，熱舞張力立即驅走臘月寒意，將現場氣氛炒熱起來。後有吉他社以「愛神」、「童年」與「夜來香」將現場拉入時光隧道，接下來國標社的恰恰及slow tango的炫麗舞姿則讓台下大爆口哨與掌聲，音樂與歡樂吸引越來越多的觀眾，各方讚嘆聲則讓到場為社團加油的姜學務長露出欣慰與感動的笑容。台上認真表演的陽明同學而後，有手語社「三個心願」青春俏皮並融合舞台劇風格呈現，與第二首「飛龍在天」的誇張逗趣表演及現場小教學，讓全場捧腹大笑，並有社區發展協會志工來洽詢學習手語的相關資訊。最後壓軸的愛杏管弦樂團，以場前解說來帶領聆聽管弦樂之美，熱鬧豐富的慶典樂曲為表演劃下句點，只留下陣陣餘音繞樑的驚豔印象給現場觀眾。姜學務長於會場之剪影社團走出校園，與社區友善互動，是教育部大專社團評鑑重點，課輔組十分鼓勵社團參與，並期望藉由吸引在地居民認識陽明社團，與在地公益團體長期交流，建立友好互動默契，與社區共同經營石牌特色文化。而生活文化廣場則是成為串連各方團體的交流平台，在這平台中，社團找到表演舞台與觀眾；在這平台中，北投扶輪社找到了同樣致力於深耕地方文化的好伙伴；在這平台中，我們發現，陽明學生不是璞玉，已成充滿自信的鑽石閃閃發亮。生活文化廣場，就在學生社團與社區互動中，漸漸萌發出自己的生命力，也逐漸讓外界瞭解陽明社團得天獨厚，擁有一隅令人稱羨的驚豔角落。生活廣場上民眾欣賞繪畫比賽的作品多元化的使用不但可活絡該場地，且讓社團人能藉由各項活動培養團隊合作力，並能與校外團體互動，增廣見聞，堪稱體驗學習之範例，十分期待以此路徑培育出新生醫領導人才。最近，有國內科技大廠規劃軍艦岩健康健行，從親山步道開始，瞭解陽明花徑蝶路之美，並向課輔組申請借用生活文化廣場，作為摸彩活動場地，並徵召社團人擔任校園小天使，引導校外人士探索校園。只要是公益健康的活動，課輔組樂見其成。校內單位若需與社區互動或舉辦各項活動，歡迎多加使用本場地。歡迎光臨陽明生活文化廣場！圖/文課輔組吳小瑄
5.7 GHz Gilbert I/Q downconverter integrated with a passive LO quadrature generator and an RF Marchand balun
(2008-02-01)
Syu, Jin-Siang
;
Meng, Chinchun
;
Yen, Ying-Chieh
;
電信工程研究所
;
Institute of Communications Engineering
A 5.7 GHz I/Q downconversion mixer is demonstrated in this letter using 0.35 mu m SiGe BiCMOS technology. A quarter-wavelength coupled line and two center-tapped transformers are utilized to generate differential quadrature LO signals. A miniaturized Marchand balun is placed before the common-base-configured RF input stage of each I/Q Gilbert mixer to generate balanced RF signals. All the reactive passive elements are placed directly on the standard silicon substrate. The 5.7 GHz I/Q downconverter achieves 7 dB conversion gain, -26 dBm IP1dB, and -18 dBm IIP3 at the power consumption of 3.875 mW and 2.5 V supply voltage.
第二十五篇：秤中藥的天平
(國立陽明大學, 2008-02-01)
高怡宣
;
陳金山
秤中藥的天平一邊比較重，另一邊比較輕，為什麼可以保持平衡呢，我們以身邊的小物品來實驗看看。力矩。衣架、線、湯匙、鉗子。 1. 將衣架剪斷，用最長的那段做支架，並用奇異筆標示等距的長度。 2. 將一根繩子綁在支架的中央，用手提著繩子的另一端，做為支點。然後在支點的左右兩側，在不同的位置，放置不同數目的湯匙，試著使支架保持平衡，不會傾斜。力矩（torque）是影響物體轉動的物理量，力矩的計算公式是「與支點的距離」乘以「重量」。當力矩的總和為零時，這個系統會維持轉動的平衡的狀態。在日常生活的應用包括﹕秤中藥的天平、國中化學課所使用的天平、以及小朋友玩的翹翹板。現在的菜市場都在使用電子秤，可以同時顯示重量及金額。在古時候（good old days），菜市場的攤販使用各式各樣的天平來稱重量，然後用心算的方式，來計算金額。那時候，因為怕被多收錢，所以客人的心算能力也很強。醫放系所高怡宣 / 陳金山老師秤中藥的天平（感謝台北市北投區尊賢街245號的鴻春參藥行提供樣品拍照）國中理化課所使用的天平（感謝台北市中正區太原路52號的尚樁五金行提供樣品拍照）在臺北市的國小及公園堙A翹翹板已經很少見了。（這張照片是在臺北縣永和市的四號公園拍照的）
A 40-MHz double differential-pair CMOS OTA with-60-dB IM3
(2008-02-01)
Lo, Tien-Yu
;
Hung, Chung-Chih
;
電信工程研究所
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Institute of Communications Engineering
A configuration of a linearized operational transconductance amplifier (OTA) for low-voltage and high-frequency applications is proposed. By using double pseudodifferential pairs and the source-degeneration structure under nano-scale CMOS technology, the norlinearity caused by short channel effect from a small feature size can be minimized. A robust common-mode control system is designed for input and output common-mode stability and thus reduces distortion caused by common-mode voltage variation. Mining ability can be achieved by using MOS transistors in the linear region. The linearity of the OTA is about -60-dB third-order inter-modulation (IM3) distortion for up to 0.9 V-pp at 40 MHz. This OTA was fabricated by the TSMC 180-nm deep n-well CMOS process. It occupies a small area of 15.1 X 10(-3) mm(2) and the power consumption is 9.5 mW under a 1.5-V supply voltage.