Browsing by Issue Date, starting with "2008-04-14"

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Reduction of photoleakage current in polycrystalline silicon thin-film transistor using NH(3) plasma treatment on buffer layer
(2008-04-14)
Lu, Hau-Yan
;
Chang, Ting-Chang
;
Liu, Po-Tsun
;
Li, Hung-Wei
;
Hu, Chin-Wei
The technology of polycrystalline silicon thin-film transistors (poly-Si TFTs) with low photoleakage current is developed in this work. The electrical characteristics of poly-Si TFTs under illumination were significantly improved employing the NH(3) plasma treatment on the buffer layer, with no need for complicate device structure and additional masks. The trap states that originated from the plasma bombardment on the interface between the poly-Si layer and buffer oxide can effectively recombine the light-induced electron-hole pairs. The fewer residual electron-hole pairs lead to the lower photoleakage current and improved subthreshold swing, as well as maintaining good electrical characteristics in the dark sate. (C) 2008 American Institute of Physics.
Reduction of photoleakage current in polycrystalline silicon thin-film transistor using NH3 plasma treatment on buffer layer
(2008-04-14)
Lu, Hau-Yan
;
Chang, Ting-Chang
;
Liu, Po-Tsun
;
Li, Hung-Wei
;
Hu, Chin-Wei
The technology of polycrystalline silicon thin-film transistors (poly-Si TFTs) with low photoleakage current is developed in this work. The electrical characteristics of poly-Si TFTs under illumination were significantly improved employing the NH3 plasma treatment on the buffer layer, with no need for complicate device structure and additional masks. The trap states that originated from the plasma bombardment on the interface between the poly-Si layer and buffer oxide can effectively recombine the light-induced electron-hole pairs. The fewer residual electron-hole pairs lead to the lower photoleakage current and improved subthreshold swing, as well as maintaining good electrical characteristics in the dark sate. (C) 2008 American Institute of Physics.
Raman spectroscopy of single nanodiamond: Phonon-confinement effects
(2008-04-14)
Sun, K. W.
;
Wang, J. Y.
;
Ko, T. Y.
;
應用化學系
;
應用化學系分子科學碩博班
In this paper, we devise techniques for immobilizing and allocating a single nanodiamond on the electron beam (e-beam) patterned smart substrate. The properly designed coordination markers on the semiconductor substrate and the high throughput of the confocal microscope provide us with a convenient tool to single out a nanodiamond with a size less than 100 nm and to study Raman spectroscopy. We observe a redshift in energy and broadening in the linewidth of the sp(3) bonding Raman peak when the size of the diamond is decreased from 90 to 35 nm. The observed shifts and linewidth broadening arise from the phonon-confinement effects and are in good agreement with calculations reported by [Ager Phys. Rev. B 43, 6491 (1991)] and [Yoshikawa Appl. Phys. Lett. 62, 3114 (1993)]. (C) 2008 American Institute of Physics.
Reliability characteristics of NiSi nanocrystals embedded in oxide and nitride layers for nonvolatile memory application
(2008-04-14)
Chen, Wei-Ren
;
Chang, Ting-Chang
;
Yeh, Jui-Lung
;
Sze, S. M.
;
Chang, Chun-Yen
The authors provided the reliability characteristics of nonvolatile nickel-silicide nanocrystal memories embedded in oxide and nitride layers for next-generation nonvolatile memory application. The charge trapping layer was deposited by sputtering a commixed target in the argon and oxygen/nitrogen ambiances, and then using a low temperature rapid thermal annealing to form nanocrystals. Transmission electron microscope clearly shows the sharpness and the density of nanocrystals. These proposed memory structures were compared for the charge storage ability, retention, and endurance. In addition, we used a simple simulation of electric field for nonvolatile nanocrystals memory to explain the advantages by using the high-k dielectric. (C) 2008 American Institute of Physics.
Formation of cobalt-silicide nanocrystals in Ge-doped dielectric layer for the application on nonvolatile memory
(2008-04-14)
Hu, Chih-Wei
;
Chang, Ting-Chang
;
Liu, Po-Tsun
;
Tu, Chun-Hao
;
Lee, Sheng-Kai
In this work, Ge-doped cobalt-silicon thin film was synthesized using a cosputter system (Co and Si(0.5)Ge(0.5)). The deposited film was annealed in oxygen ambient at 650 degrees C to form cobalt-silicide nanocrystals. The formation of isolated silicide nanocrystals was confirmed by transmission electron microscopy and x-ray photoelectron spectroscopy analysis. In metal-oxide-insulator-oxide-silicon structure, a significant electrical hysteresis is observed and attributed by the presence of the cobalt-silicide nanocrystals and the oxidized Ge elements. (C) 2008 American Institute of Physics.
Characterization of one-dimension edge roughness from far-field irradiance at subwavelength-scale precision
(2008-04-15)
Chu, Shu-Chun
;
Chern, Jyh-Long
;
光電工程學系
;
Department of Photonics
It is proposed and numerically verified that the one-dimensional edge roughness of test sample can be characterized by far-field irradiance measurement at subwavelength-scale precision with a constructed aperture playing as an optical ruler. The precision of the proposed scheme of measurement could be better than 3%, even when the edge roughness is in subwavelength-scale. The influence of sample thickness on the proposed measurement scheme is also investigated and considered. (C) 2007 Elsevier B.V. All rights reserved.
Panpositionable hamiltonicity and panconnectivity of the arrangement graphs
(2008-04-15)
Teng, Yuan-Hsiang
;
Tan, Jimmy J. M.
;
Hsu, Lih-Hsing
;
資訊工程學系
;
Department of Computer Science
The arrangement graph A(n,k) is a generalization of the star graph. It is more flexible in its size than the star graph. There are some results concerning hamiltonicity and pancyclicity of the arrangement graphs. In this paper, we propose a new concept called panpositionable hamiltonicity. A hamiltonian graph G is panpositionable if for any two different vertices x and y of G and for any integer l satisfying d(x,y) <= l <= vertical bar v(G)vertical bar - d(x,y), there exists a hamiltonian cycle C of G such that the relative distance between x and y on C is l. A graph G is panconnected if there exists a path of length l joining any two different vertices x and y with d(x,y) <= l <= vertical bar v(G)vertical bar - 1. We show that An, k is panpositionable hamiltonian and panconnected if k >= 1 and n - k >= 2. (c) 2007 Elsevier Inc. All rights reserved.
Strong Menger connectivity with conditional faults on the class of hypercube-like networks
(2008-04-15)
Shih, Lun-Min
;
Chiang, Chieh-Feng
;
Hsu, Lih-Hsing
;
Tan, Jimmy J. M.
;
資訊工程學系
In this paper, we study the Menger property on a class of hypercube-like networks. We show that in all n-dimensional hypercubelike networks with n - 2 vertices removed, every pair of unremoved vertices u and v are connected by min{deg(u), deg(v)} vertex-disjoint paths, where deg(u) and deg(v) are the remaining degree of vertices u and v, respectively. Furthermore, under the restricted condition that each vertex has at least two fault-free adjacent vertices, all hypercube-like networks still have the strong Menger property, even if there are up to 2n - 5 vertex faults. (C) 2007 Elsevier B.V. All rights reserved.
Calculation of atomic hydrogen and its photoelectron spectra in momentum space
(2008-04-15)
Jiang, T. F.
;
物理研究所
;
Institute of Physics
An essential modification to the kernel in the numerical calculation of hydrogenic momentum wave functions, is presented in this paper. Using only 256 grid points, the calculated eigenvalues, eigenfunctions and the oscillator strengths are shown to be in excellent agreement with the exact analytic results. The reliable pseudocomplete set of momentum space eigenfunctions is then applied to the time-dependent calculation of intense laser pulse on the hydrogen atom. With the advantage of having no boundary reflection during the time evolution, like that inherent in the coordinate space method, the photoelectron spectra of above-threshold-ionization (ATI) are elucidated for four cases. Some of which are not feasible or very difficult to solve with the coordinate space method. Generalization of the method to single-active electron systems is straightforward. Due to the good accuracy with a reasonably small-sized basis set, applications to the currently interested intense case of laser pulse on atom or molecule are expected. (c) 2007 Elsevier B.V. All rights reserved.
XOR-based conditional keeper and an architecture implementing its application to match lines
(2008-04-15)
Hua
;
Chung-Hsien
;
Peng
;
Chi-Wei
;
Hwang
The present invention discloses an XOR-based conditional keeper and an architecture implementing its application to match lines, wherein the XOR gate in the conditional keeper receives a clock signal synchronous with CAM (Content Addressable Memory) cells and cooperates with a floating signal from the floating node to create an XOR control signal, and the XOR control signal is transmitted to a P-type transistor to create a data signal to control the XOR-based conditional keeper so that the XOR-based conditional keeper can execute an appropriate corresponding action, which can replace the conventional keepers of merely “on” and “off” modes. Further, the XOR-based conditional keeper of the present invention can apply to the dynamic CAM match line architecture so that the dynamic match line can have lower power consumption, higher noise immunity, and high processing speed. Further, the XOR-based conditional keeper of the present invention can also apply to all kinds of dynamic circuits, particularly to a high fan-in circuit.
A distributed computation algorithm for solving portfolio problems with integer variables
(2008-04-16)
Li, Han-Lin
;
Tsai, Jung-Fa
;
資訊管理與財務金融系註：原資管所+財金所
;
Department of Information Management and Finance
A portfolio problem with integer variables can facilitate the use of complex models, including models containing discrete asset values, transaction costs, and logical constraints. This study proposes a distributed algorithm for solving a portfolio program to obtain a global optimum. For a portfolio problem with n integer variables, the objective function first is converted into an ellipse function containing n separated quadratic terms. Next, the problem is decomposed into m equal-size separable programming problems solvable by a distributed computation system composed of rn personal computers linked via the Internet. The numerical examples illustrate that the proposed method can obtain the global optimum effectively for large scale portfolio problems involving integral variables. (c) 2007 Elsevier B.V. All rights reserved.
Electrogenerated chemiluminescence of a spirobifluorene-linked bisanthracene: A possible simultaneous, two-electron transfer
(2008-04-16)
Sartin, Matthew M.
;
Shu, Chingfong
;
Bard, Allen J.
;
應用化學系
;
資訊工程學系
We report the electrogenerated Chemiluminescence (ECL) of 2,2'-bis(10-phenylanthracen-9-yl)-9,9'-spirobifluorene (spiro-FPA), a dichromophoric molecule composed of two phenylanthracenes linked by a spirobifluorene moiety (PA similar to X similar to PA). The results are compared to those for 9,10-diphenylanthracene (DPA), a related molecule with a single chromophore. Cyclic voltammetry (CV) of spiro-FPA shows two reversible, closely spaced, one-electron transfers on both reduction and oxidation, occurring at E-1,E-red degrees = -2.02, E-2red degrees = -2.07 V vs SCE and E-1,E-OX degrees = 1.14, E-2,E-OX degrees = 1.20 V vs SCE. The potentials for each pair are close enough to appear as a single peak in CV, indicating that the spirobifluorene moiety interrupts conjugation between the redox centers. The potentials observed are similar to those of DPA, which shows E-red degrees = -2.06 V vs SCE and E-OX degrees = 1.15 V vs SCE. The absorbance spectrum of spiro-FPA shows lambda(max,abs) 377 nm, with epsilon(377) = 25 700 M-1 s(-1), while DPA exhibited lambda(max,abs) = 374 nm, with epsilon(374) = 13 800 M-1 s(-1), demonstrating that spiro-FPA has twice the available chromophores as DPA. Photoluminescence (PL) data for spiro-FPA shows lambda(max,PL) = 434 nm, with Phi(PL) = 0.74, while DPA fluoresces at 420 nm with Phi(PL) 0.91; thus, there is greater solvent or structural relaxation in the spiro-FPA excited state, which may account for the greater internal conversion. Unlike DPA, the ECL spectrum of spiro-FPA exhibits long-wavelength emission not observed in the PL. We attribute this emission to excimers formed during annihilation ECL. Steric hindrance prevents DPA from forming excimers, even in ECL, but spiro-FPA annihilation can occur between pairs of di-ions (PA(center dot-)similar to X similar to PA(center dot-) and PA(center dot+)similar to X similar to PA(center dot+)), which are electrostatically more strongly attracted to one another than the mono-ions. This greater electrostatic attraction may be sufficient to overcome the steric hindrance to excimer formation. Lowering the electrolyte concentration decreases the electrostatic shielding of the ions from one another; thus, the increase in longer wavelength ECL accompanying a decrease in electrolyte concentration supports the role of the di-ions in excimer formation. Additionally, simulations show, consistent with experiment, a more rapid decrease in excimer concentration than in excited monomer concentration as a function of time after each potential pulse. This is probably due to the greater number of scavenging reactions available for di-ions. The simulations are confirmed experimentally when lower potential pulsing frequencies yield lower relative excimer emission. Since an excited state created by one-electron transfer between two di-ions should be rapidly quenched via electron transfer by the other PA moiety, the existence of excimers suggests the possibility of simultaneous, two-electron transfer to generate the excimer.
無線網路熱點中動態負載均衡之裝置與方法
(2008-04-16)
曹孝櫟
;
徐誌謙
;
余泰興
本發明揭露一種無線網路熱點中動態負載均衡之裝置與方法。此裝置包含一資源分配模組和一負載調整單元。此資源分配模組先建立此無線網路熱點中存取點與用戶間的資源模型和關係,並尋找可能的負載均衡轉移路徑,從中選出一負載均衡轉移路徑。根據此路徑,負載調整單元重新分配網路資源並動態調整此無線網路熱點中多個存取點間的負載。本發明適用於集中式與分散式無線通訊系統。
「從科技島到加值島」施振榮專題演講
(2008-04-20)
謝甄芳
;
Department of Communication and Technology
;
傳播與科技學系
適逢國立交通大學在台建校50週年，4月11日於校內舉辦的校慶相關活動「全球校友商界領袖峰會」中，特地請到『台灣50、影響50』傑出校友名單中的電子產業界菁英─宏碁（Acer）電腦創辦人施振榮先生發表演說，並邀請世界各地菁英校友共襄盛舉，一同分享產業經驗。
拷秋勤唸歌　台灣好嘻哈
(2008-04-20)
賴奕如
;
Department of Communication and Technology
;
傳播與科技學系
「台灣正宗唸歌團」拷秋勤，秉持以台灣文化及精神為出發點的理念，結合了台灣傳統的音樂素材與新的外來音樂形式，展現出多元的文化可能，不但成功地將外來音樂本土化，讓自己的作品充滿了台灣人的氣息與聲音，更藉由音樂傳達他們的想法與意念。
電子工程學系校慶活動實錄
(2008-04-20)
黃夙蓮
;
Department of Communication and Technology
;
傳播與科技學系
電工系開幕
薪火相傳曾郁文的台灣原味
(2008-04-20)
鄭瑋津
;
Department of Communication and Technology
;
傳播與科技學系
藝術家曾郁文為交通大學製作的風動藝術在校慶時舉行剪綵。
《三國之見龍卸甲》
(2008-04-20)
姚翔
;
Department of Communication and Technology
;
傳播與科技學系
影評
總編輯的話
(2008-04-20)
陳惠玟
;
Department of Communication and Technology
;
傳播與科技學系
總編輯的話
交大五校校友分享
(2008-04-20)
謝佳慧
;
Department of Communication and Technology
;
傳播與科技學系
五校校友談交大