Browsing by Issue Date, starting with "2008-06-08"
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Item type:Item, 二十年後再交鋒 鹿死誰手將揭曉(2008-06-08) ;沈昭邦 ;Department of Communication and Technology傳播與科技學系睽違20年,湖人、塞爾提克兩個傳統勁旅在次同時進入總冠軍賽,東西兩隊長年恩怨,究竟誰會拿下冠軍?Item type:Item, Item type:Item, 公廣媒體 替弱勢發聲(2008-06-08) ;姜建亨 ;Department of Communication and Technology傳播與科技學系新聞帶 原住民對原民台與其他家電視媒體的看法Item type:Item, Item type:Item, 北京到巴黎 為減緩地球暖化而騎(2008-06-08) ;謝甄芳 ;Department of Communication and Technology傳播與科技學系北京到巴黎 為減緩地球暖化而騎Item type:Item, Item type:Item, Item type:Item, 校隊忙 開心送舊變壓力?(2008-06-08) ;吳念慈 ;Department of Communication and Technology傳播與科技學系校隊的同學不但要花費時間、精力在訓練上,還要花時間、用心思,設計、準備送舊晚會的活動。6月4號在國立交通大學體育館,有一場盛大的晚宴,是全體校隊成員,歡送校隊畢業生的宴會。晚會形式依照過去傳統,由各校隊在校生準備表演節目,評審老師一表演內容、服裝、創意、及整體性等,評分並頒發獎項與獎金。期末考將至,這樣的活動形式,對於校隊同學來說,是共襄盛舉、還是另一種壓力?Item type:Item, Item type:Item, Item type:Item, Item type:Item, Item type:Item, Item type:Item, Item type:Item, Item type:Item, 上課打電動 師生共解成癮之謎(2008-06-08) ;鍾瑄 ;Department of Communication and Technology傳播與科技學系沉溺於線上遊戲一直被教育界視為負面的成癮行為,在交大許多學生就有遊戲成癮現象,學生時常廢寢忘食地窩在寢室打電動,但電玩遊戲不絕對是負面的,交通大學傳播與科技學系有一門網路與社群文化課程,上課過程中學生親身體驗線上遊戲的樂趣,透過課程提供的文本重新分析遊戲行為,依照每週不同的遊玩任務發表自己的發現與分析,與其他同學共同討論線上遊戲的許多現象,因為對遊戲成癮更多的了解,他們對遊戲行為也有更深一層的認識。Item type:Item, Item type:Item, Item type:Item, Atomic scale characterization of buried In(x)Ga(1-x)As quantum dots using pulsed laser atom probe tomography(2008-06-09) ;Mueller, M. ;Cerezo, A. ;Smith, G. D. W. ;Chang, L.Gerstl, S. S. A.Atom probe tomography (APT) has been used to study In(x)Ga(1-x)As quantum dots buried in GaAs. The dots have an average base width of 16.1 +/- 1.1 nm and height of 3.5 +/- 0.3 nm, but a wide range of sizes. APT composition profiles across the dots are similar to a previous study by cross-sectional scanning transmission electron microscopy, but show significant gallium incorporation (average x=0.22 +/- 0.01). The direct three-dimensional nature of the APT data also reveals the complex spatial distribution of indium within the dots. Data such as these are vital for optimizing the performance of quantum dot materials and devices. (c) 2008 American Institute of Physics.Item type:Item, Complementary inverter circuits based on p-SnO2 and n-In2O3 thin film transistors(2008-06-09) ;Dhananjay ;Chu, Chih-Wei ;Ou, Chun-Wei ;Wu, Meng-ChyiHo, Zhong-YoThin film transistors (TFTs) of indium oxide (In2O3) and tin oxide (SnO2) were fabricated on SiO2 gate dielectric using reactive evaporation process. Structural investigation of the films revealed that In2O3 films were polycrystalline in nature with preferred (222) orientation and SnO2 films exhibited amorphous nature. The x-ray photoelectric spectroscopy measurements suggest that SnO2 films were oxygen rich and presume mixed oxidation states of Sn, namely Sn2+ and Sn4+. While the In2O3 based TFTs possess n-type channel conduction, SnO2 based TFTs exhibited anomalous p-type conductivity. Integration of these n- and p-type devices resulted in complementary inverter with a gain of 11. (C) 2008 American Institute of Physics.