Browsing by Issue Date, starting with "2008-11-11"

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Chaos synchronization of double Duffing systems with parameters excited by a chaotic signal
(2008-11-11)
Ge, Zheng-Ming
;
Li, Chien-Hao
;
Li, Shih-Yu
;
Chang, Ching Ming
;
機械工程學系
Chaos synchronization by driving parameter for two uncoupled identical chaotic double Duffing systems is presented. Replacing two corresponding parameters of the identical systems by the same function of chaotic state variables of a third chaotic system, the synchronization or anti-synchronization of two uncoupled systems can be obtained. Numerical simulations are illustrated for either synchronization or anti-synchronization of which the occurrence depends significantly on initial conditions and on driving strength. Alternative complete synchronization and anti-synchronization is also discovered. (c) 2008 Published by Elsevier Ltd.
一種用於多輸入多輸出雙訊號模式上鏈CDMA系統之符元偵測方法
(2008-11-11)
何從廉
;
吳卓諭
;
李大嵩
本發明提供一種在頻率選擇式通道下用於廣泛式多輸出多輸入分碼多重接取系統之區塊V-BLAST偵測法則。其中每個用戶的資料流根據通道的特性,可以經由正交空-時區塊編碼以獲取傳送多樣或是經由空間多工以獲取高頻譜效益。對於此一考慮的雙模訊號系統,接收機可能會遭遇大量的資料處理。因此一種二階段群組式的V-BLAST偵測法則被提出以進一步降低運算複雜度。
Method for predicting inductance and self-resonant frequency of a spiral inductor
(2008-11-11)
Chen
;
Chien-Chang
;
Cheng
;
Yu-Ting
In this invention, a closed-form integral model for on-chip suspended rectangular spiral inductor is presented. The model of this invention bases on the Kramers-Kronig relations, field theory, and solid state physics to characterize a spiral inductor which RFIC designers could easily have the optimal design utilizing this analytical method. Meanwhile, this model can provide satisfactory prediction to the inductance and self-resonant frequency of the spiral inductor without complicated geometry analysis. Furthermore, unlike conventional formulations only based on circuit parameters, this model could safely predict the inductance and the self-resonant frequency when altering the material (excluding ferromagnetic materials) of a spiral inductor.
基於電腦視覺的智慧型夜間車輛即時偵測與辨識系統
(2008-11-11)
吳炳飛
;
陳彥霖
;
陳元馨
;
陳昭榮
本發明係關於一種夜間車輛即時偵測與辨識系統,其包含:光源物件影像切割裝置1,光源物件分類裝置2,車燈物件辨識裝置3,車輛位置判定裝置4以及車輛追蹤裝置5;在各種夜間道路照明狀態下,該系統能有效且正確地標定與辨識來車與前車之車燈,且在當時道路環境狀況下,正確地提供輔助駕駛所需解析車輛前方交通狀況之資訊。
Traps and performance of MEH-PPV/CdSe(ZnS) nanocomposite-based organic light-emitting diodes
(2008-11-12)
Lee, Chih-Wen
;
Renaud, Cedric
;
Hsu, Chain-Shu
;
Nguyen, Thien-Phap
;
應用化學系
We report the fabrication and investigations of organic light-emitting diodes (OLEDs) using a composite made by mixing poly[2-methoxy-5(2'-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV) with CdSe/ZnS core/shell quantum dots (QDs). The electroluminescence efficiency of the studied devices was found to be improved as compared to devices using MEH-PPV. Moreover, the current density decreased with increasing QD concentration. We checked the effects of QDs on the electrical transport by determining the trap states, making use of the charge-based deep level transient spectroscopy (Q-DLTS) technique. The most striking result obtained is the decrease in trap density when adding QDs to the MEH-PPV polymer film. These results suggest that QDs would heal defects in nanocomposite-based devices and that CdSe/ZnS QDs prevent the trap center formation.
A multiple power-level approach for wireless sensor network positioning
(2008-11-13)
Fang, Jen-Yu
;
Chu, Hung-Chi
;
Jan, Rong-Hong
;
Yang, Wuu
;
資訊工程學系
Wireless sensor networks enhance our ability to monitor the physical world. Many recent researches on wireless sensor networks have focused on aspects such as routing, node cooperation, and energy consumption. In addition to these topics, the positioning service is also an important function in sensor networks. This paper presents a multiple power-level positioning algorithm, discusses its capabilities, and evaluates its performance in various environments. The simulation results show that the proposed algorithm exhibits better accuracy than do traditional single power-level methods. In critical situations such as reference node failure, unstable radio transmission range and beacon collision, the proposed algorithm still performs well. Finally, the positioning method is implemented on a sensor network test bed, and the actual measurements show that, the average estimation error is 2.5 m when three power-levels are used and adjacent reference nodes are 12 m apart in an outdoor environment. (C) 2008 Elsevier B.V. All rights reserved.
Magnetic ordering anisotropy in epitaxial orthorhombic multiferroic YMnO(3) films
(2008-11-15)
Hsieh, C. C.
;
Lin, T. H.
;
Shih, H. C.
;
Hsu, C. -H.
;
Luo, C. W.
Orthorhombic YMnO(3) thin films with (200), (020), and (001) orientations were, respectively, obtained by pulsed laser deposition on SrTiO(3)(110), LaAlO(3)(110), and SrTiO(3)(001) substrates. The results demonstrate that the strain between film and substrate can serve as an alternative in transforming the thermodynamically stable hexagonal YMnO(3) into the orthorhombic phase, which previously could be obtained with high-pressure high temperature syntheses and epitaxy-stabilized thin film processes. More importantly, these films allow us, for the first time, to unambiguously disclose the intrinsic magnetic property along different crystallographic orientations. Our results show that, although the antiferromagnetic (AFM) ordering remains the same, there is an additional spin reordering transition which is very much dependent on the crystallographic orientation along which the measuring field was applied and on the in-plane crystallographic alignment of the films. Detailed analyses indicate that the origin of the observed second reordering may be due to some strain-induced canted AFM state instead of the incommensurate lock-in transitions conceived previously.
Improving segmentation accuracy for magnetic resonance imaging using a boosted decision tree
(2008-11-15)
Chao, Wen-Hung
;
Chen, You-Yin
;
Cho, Chien-Wen
;
Lin, Sheng-Huang
;
Shih, Yen-Yu I.
The purpose of this study was to improve the accuracy rate of brain tissue classification in magnetic resonance (MR) imaging using a boosted decision tree segmentation algorithm. Herein. we examined simulated phantom MR (SPMR) images, simulated brain MR (SBMR) images, and a real data. The accuracy rate and k index when classifying brain tissues as gray matter (GM), white matter (WM), or cerebral-spinal fluid (CSF) were better when using the boosted decision tree algorithm combined with a fuzzy threshold than when using a statistical region-growing (SRG) algorithm [Wolf 1, Vetter M, Wegner 1, Bottger T, Nolden M, Schobinger M, et al. The medical imaging interaction toolkit. Med Imag Anal 2005;9:594-604] and an adaptive segmentation (AS) algorithm [Wells WM, Crimson WEL, Kikinis R, Jolesz FA. Adaptive segmentation of MRI data. IEEE Trans Med Imag 1996; 15:429-42]. The segmentation performance when using this algorithm on real data from brain MR images was also better than those of SRG and AS algorithm. Segmentation of a real data using the boosted decision tree produced particularly clear brain MR imaging and permitted more accurate brain tissue segmentation. In conclusion, a decision tree with appropriate boost trials successfully improved the accuracy rate of MR brain tissue segmentation. Crown Copyright (C) 2008 Published by Elsevier B.V. All rights reserved.
Efficiency enhancement of UV/blue light emitting diodes via nanoscaled epitaxial lateral overgrowth of GaN on a SiO(2) nanorod-array patterned sapphire substrate
(2008-11-15)
Chiu, C. H.
;
Li, Zhen-Yu
;
Chao, C. L.
;
Lo, M. H.
;
Kuo, H. C.
High-quality GaN layer was successfully grown on a SiO(2) nanorod-array patterned sapphire substrate (NAPSS) using metal-organic chemical vapor deposition by a nanoscaled epitaxial lateral overgrowth (NELO) method. From tunneling electron microscope images, well coalescence and turned dislocations are parallel to the surface direction were clearly observed. The Raman shift measurement shows the residual stress in GaN was greatly reduced from 1.359 to 0.652 GPa when compared to a GaN on flat sapphire substrate. Also, a high-efficiency GaN-based light-emitting diodes (LEDs) were demonstrated on the NELO NAPSS GaN, the respective output power and external quantum efficiency of the NELO NAPSS LEDs were estimated to be 22 mW and 40.2% at an injection current of 20 mA, showing an enhancement factor of 52% over conventional LEDs. The significant improvement resulted from both the enhanced light extraction assisted by the NAPSS, and the reduced dislocation densities using the NELO method. (c) 2008 Published by Elsevier B.V.
Efficiency enhancement of UV/blue light emitting diodes via nanoscaled epitaxial lateral overgrowth of GaN on a SiO2 nanorod-array patterned sapphire substrate
(2008-11-15)
Chiu, C. H.
;
Li, Zhen-Yu
;
Chao, C. L.
;
Lo, M. H.
;
Kuo, H. C.
High-quality GaN layer was successfully grown on a SiO2 nanorod-array patterned sapphire substrate (NAPSS) using metal-organic chemical vapor deposition by a nanoscaled epitaxial lateral overgrowth (NELO) method. From tunneling electron microscope images, well coalescence and turned dislocations are parallel to the surface direction were clearly observed. The Raman shift measurement shows the residual stress in GaN was greatly reduced from 1.359 to 0.652 GPa when compared to a GaN on flat sapphire substrate. Also, a high-efficiency GaN-based light-emitting diodes (LEDs) were demonstrated on the NELO NAPSS GaN, the respective output power and external quantum efficiency of the NELO NAPSS LEDs were estimated to be 22 mW and 40.2% at an injection current of 20 mA, showing an enhancement factor of 52% over conventional LEDs. The significant improvement resulted from both the enhanced light extraction assisted by the NAPSS, and the reduced dislocation densities using the NELO method. (c) 2008 Published by Elsevier B.V.
High-reflectivity ultraviolet AlN/AlGaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition
(2008-11-15)
Chen, Jun-Rong
;
Ling, Shih-Chun
;
Hung, Chin-Tsang
;
Ko, Tsung-Shine
;
Lu, Tien-Chang
High-reflectivity ultraviolet distributed Bragg reflectors (DBRs), based on AlN/AlGaN quarter-wave layers, have been designed and grown on 2 in (0001) sapphire substrates by metalorganic chemical vapor deposition. The growth of 20-pair AlN/Al(0.23)Ga(0.77)N DBR shows no observable cracks in the structure and achieves peak reflectivity of 90% at 367 nm together with a stop-band width of 24 nm. Furthermore, the growth of 34-pair AlN/Al(0.23)Ga(0.77)N DBR shows partial cracks from optical microscopy images. According to the room-temperature photoluminescence measurement, the ennission spectrum of 34-pair AlN/Al(0.23)Ga(0.77)N DBR is broader than that of 20-pair AlN/Al(0.23)Ga(0.77)N DBR, which Could be due to strain inhomogeneity generated by cracks. Despite the crystal quality problem, the peak reflectivity of 34-pair AlN/Al(0.23)Ga(0.77)/N DBR could still achieve 97% at 358 nm and the stop-band width is 16nm. (C) 2008 Elsevier B.V. All rights reserved.
Strain relaxation in InAs self-assembled quantum dots induced by a high N incorporation
(2008-11-15)
Chen, J. F.
;
Yang, C. H.
;
Wu, Y. H.
;
Chang, L.
;
Chi, J. Y.
The effect of a high N incorporation in self-assembled InAs quantum dots (QDs) is investigated by analyzing the electronic and structural properties around QD region. Capacitance-voltage profiling and admittance spectroscopy shows that N incorporation into the InAs QD layer leads to drastic carrier depletion in the QD layer and neighboring GaAs layers due to the formation of a deep defect state at 0.34-0.41 eV. The signature of this defect state is similar to those defects observed in strain relaxed QDs or InGaAs/GaAs quantum wells when the InAs deposition thickness exceeds a critical thickness. Accordingly, the N incorporation might result in strain relaxation either by increasing localized strain or by inducing composition inhomogeneities, which provide nucleation sources for strain relaxation. The argument of strain relaxation is supported by transmission electron microscopy that reveals lattice misfits at the QD layer and neighboring GaAs layers.
Characteristics of a-plane GaN with the SiNx insertion layer grown by metal-organic chemical vapor deposition
(2008-11-15)
Ko, T. S.
;
Wang, T. C.
;
Huang, H. M.
;
Chen, J. R.
;
Chen, H. G.
We utilized in-situ-grown SiNx insertion layers to mitigate part of dislocations stretching in nonpolar a-plane GaN films using metal-organic chemical vapor deposition. Both X-ray diffraction (XRD) and atomic force microscopy (AFM) measurements revealed that better crystal quality and smoother surface could be obtained when the in-situ SiNx layer was inserted closer to the r-plane sapphire substrate and indicated that the in-situ SiNx insertion layer could suppress dislocations caused by lattice mismatch between the sapphire and epitaxial layers. In addition, photoluminescence and cathodoluminescence measurements confirmed the effect of the in-situ SiNx insertion layer on the optical properties of the improved a-plane GaN thin film, which is consistent with the XRD and AFM analyses and suggested reduction in the density of nonradiative centers. (C) 2008 Elsevier B.V. All rights reserved.
Electric-field-controlled electron relaxation in lateral double quantum dots embedded in a suspended slab
(2008-11-15)
Liao, Y. Y.
;
Chuu, D. S.
;
Jian, S. R.
;
電子物理學系
;
Department of Electrophysics
This study investigates phonon-induced electron relaxation in a lateral double quantum dot that is embedded in a suspended slab. Exact calculations are made in electric fields. The dependence of the relaxation rate on the parameters of the dots and the slabs is analyzed. Numerical results indicate that the relaxation rate depends strongly on the phonon character of the slab. Unlike in the bulk environment, phonon-subband quantization clearly influences the behavior. In particular, the relaxation rate can be greatly suppressed or enhanced by tuning the electric fields. This fact may be useful in manipulating the relaxation rate in lateral double quantum dots.
Characteristics of a-plane GaN with the SiN(x) insertion layer grown by metal-organic chemical vapor deposition
(2008-11-15)
Ko, T. S.
;
Wang, T. C.
;
Huang, H. M.
;
Chen, J. R.
;
Chen, H. G.
We utilized in-situ-grown SiN(x) insertion layers to mitigate part of dislocations stretching in nonpolar a-plane GaN films using metal-organic chemical vapor deposition. Both X-ray diffraction (XRD) and atomic force microscopy (AFM) measurements revealed that better crystal quality and smoother surface could be obtained when the in-situ SiN(x) layer was inserted closer to the r-plane sapphire substrate and indicated that the in-situ SiN(x) insertion layer could suppress dislocations caused by lattice mismatch between the sapphire and epitaxial layers. In addition, photoluminescence and cathodoluminescence measurements confirmed the effect of the in-situ SiN(x) insertion layer on the optical properties of the improved a-plane GaN thin film, which is consistent with the XRD and AFM analyses and suggested reduction in the density of nonradiative centers. (C) 2008 Elsevier B.V. All rights reserved.
Magnetic ordering anisotropy in epitaxial orthorhombic multiferroic YMnO3 films
(2008-11-15)
Hsieh, C. C.
;
Lin, T. H.
;
Shih, H. C.
;
Hsu, C. -H.
;
Luo, C. W.
Orthorhombic YMnO3 thin films with (200), (020), and (001) orientations were, respectively, obtained by pulsed laser deposition on SrTiO3(110), LaAlO3(110), and SrTiO3(001) substrates. The results demonstrate that the strain between film and substrate can serve as an alternative in transforming the thermodynamically stable hexagonal YMnO3 into the orthorhombic phase, which previously could be obtained with high-pressure high temperature syntheses and epitaxy-stabilized thin film processes. More importantly, these films allow us, for the first time, to unambiguously disclose the intrinsic magnetic property along different crystallographic orientations. Our results show that, although the antiferromagnetic (AFM) ordering remains the same, there is an additional spin reordering transition which is very much dependent on the crystallographic orientation along which the measuring field was applied and on the in-plane crystallographic alignment of the films. Detailed analyses indicate that the origin of the observed second reordering may be due to some strain-induced canted AFM state instead of the incommensurate lock-in transitions conceived previously.
跨越障礙之載具
(2008-11-16)
鄭璧瑩
;
郭芳富
;
黃健寶
;
林奕仲
;
李育賢
本發明係提供一種跨越障礙之載具,係用於載運乘客或其他負荷的支座;一感測調整模組用於偵測該支座傾斜之狀態與維持該支座之水平;一地面接觸模組,設置於該支座下,其支撐一有效載重,並可抬舉該支座跨越一障礙之一表面,與一無線訊號接收發射模組做結合,可藉由該無線訊號接收發射器蒐集與傳送資訊,來做出相對應其內部狀況所須之調整與動作,達成一具有安全、穩定、可靠、舒適、便利、成本低的跨越障礙之載具。
用於白光光源之新穎螢光體與其製造方法
(2008-11-16)
陳登銘
;
張峻魁
本發明係提供一種用於白光光源之新穎螢光體組成物,係為下列一般式所示:(Ml-m-nCemEun)2BO3X 其中M為選自於Ca、Sr、Ba所組成之群組中至少一元素、X為選自於Cl、Br所組成之群組中至少一元素,且m之數値範圍為0≦m≦0.5,以及n之數値範圍為0≦n≦0.5。
感測裝置
(2008-11-16)
鄭璧瑩
;
黃健寶
本發明係提供一種感測裝置,係應用一半球形容器裝載液態介電質,利用半球形容器內兩對以上之電極端,以供液態介電質觸發電極來導通電路,而此容器外圍是以抗腐蝕材料包覆之;一緩衝頸縮口及一精度閥,設置於容器上,以避免該液態介電質與電極產生接觸,達成避免震動之干擾及調節液態介電質的液面高度改變感測裝置之靈敏度;以及一防漏感測裝置,係包覆半球形容器、液態介電質、緩衝頸縮口、精度閥,以防止該液態介電質洩漏,達成一個多方向可控制、偵測、調整傾斜功能之感測器。
微波退火提升有機電子元件特性之方法
(2008-11-16)
陳方中
;
葛祖榮
;
林義凱
本發明為一種微波退火提升有機電子元件特性之方法,包括下列步驟:提供有機電子元件;以及微波退火有機電子元件。因為微波退火具有非接觸式、退火標的具選擇性、以及退火時間短等特性,且可以僅針對有機電子元件的有機主動層(Organic active layer)退火,使得有機主動層內的有機分子在短時間內重新排列以提高有機分子的排列程度,進而增加光電轉換效率,並提升有機電子元件的特性。