Browsing by Issue Date, starting with "2008-12-22"
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Item type:Item, Crucial integration of high work-function metal gate and high-k blocking oxide on charge-trapping type flash memory device(2008-12-22) ;Tsai, Ping-Hung ;Chang-Liao, Kuei-Shu ;Yang, Dong-Wei ;Chung, Yuan-BinWang, Tien-KoCharge-trapping type flash memory devices with various integrations of metal gates having different work functions and blocking oxides were investigated in this work. Improved erasing speed together with acceptable reliability characteristics can be achieved by the integration of high work-function metal gate and high-k blocking oxide due to an efficient suppression of electron back tunneling through the blocking oxide during erasing operation for the MoN sample. Specifically, the high work-function value of MoN metal gate can be kept only by integrating with the Al(2)O(3) blocking oxide because it can suppress the formation of molybdenum-silicide. Moreover, high-speed erasing can also be demonstrated by combining the MoN metal gate with an HfAlO charge trapping layer when band-to-band hot hole erasing method is adopted.Item type:Item, Cascaded four-wave mixing and multicolored arrays generation in a sapphire plate by using two crossing beams of femtosecond laser(2008-12-22) ;Liu, Jun ;Kobayashi, Takayoshi ;電子物理學系Department of ElectrophysicsUltrabroadband signals were found to be generated by cascaded four-wave mixing in a bulk medium by using two crossing femtosecond laser pulses. As many as fifteen spectral upshifted pulses and two spectral downshifted pulses were obtained with spectral bandwidth broader than 1.5 octaves. Bright upshifted pulses were observed on both sides of the two crossing beams. Two dimensional multicolored arrays were observed for the first time in a sapphire plate medium. (c) 2008 Optical Society of AmericaItem type:Item, On applying fair queuing discipline to schedule requests at access gateway for downlink differential QoS(2008-12-22) ;Tsao, Shih-Chiang ;Lai, Yuan-Cheng ;Tsao, Le-Chi ;Lin, Ying-Dar資訊工程學系Scheduling packets is a usual solution to allocate the bandwidth on a bottleneck link. However, this solution cannot be used to manage the downlink bandwidth at the user-side access gateway, since the traffic is queued at the ISP-side gateway but not the user-side gateway. An idea is scheduling the requests at the user-side gateway to control the amount of the responses queued in the ISP-side gateway. This work first investigates the possibility of applying the class-based fair queuing discipline, which was widely and maturely used in scheduling packets, to schedule requests. However, we found that simply applying this discipline to schedule requests would encounter the timing and ordering problems at releasing requests and may not satisfy high-class users. Thus, we propose a minimum-service first request scheduling (MSF-RS) scheme. MSF-RS always selects the next request from the class receiving the minimum service to provide user-based weighted fairness, which ensures more bandwidth for high-class users. Next, MSF-RS uses a window-based rate control on releasing requests to maintain full link utilization and reduce the user-perceived latency. The results of analysis, simulation and field trial demonstrate that MSF-RS provides fairness while reducing 23-30% of user-perceived latency on average. Besides, a MSF-RS gateway can save 25% of CPU loading. (C) 2008 Elsevier B.V. All rights reserved.Item type:Item, Study of Supramolecular Side-Chain Copolymers Containing Light-Emitting H-Acceptors and Electron-Transporting Dendritic H-Donors(2008-12-23) ;Yang, Po-Jen ;Wu, Chung-Wen ;Sahu, Duryodhan ;Lin, Hong-Cheu材料科學與工程學系A novel light-emitting hydrogen-bonded (H-) acceptor PBB (M1) containing three conjugated aromatic rings, including one pyridyl terminus and two lateral methoxyl groups (on the middle ring), was successfully synthesized via Horner-Wadsworth-Emmons (HWE) olefination and Sonogashira coupling reaction. Moreover, different molar ratios of light-emitting H-acceptor monomer PBB (MI) and hole-transporting monomer CAZ (M2) bearing a carbazole unit were copolymerized through free radical polymerization to obtain light-emitting and hole-transporting H-acceptor copolymers (P1-P5). H-acceptor copolymers P3 and P4 were complexed with different generations of dendritic H-donors (G1COOH-G3COOH) bearing 1,3,4-oxadiazole (OXD) dendrons and terminal benzoic acids via H-bonded self-assembly to form supramolecular side-chain copolymers (i.e., H-bonded dendritic complexes). In contrast to H-acceptor homopolymer P1(HPBB), H-acceptor copolymers P2-P4 incorporated with carbazole (CAZ) moieties effectively enhance the glass transition temperatures (T(g)s) and minimize the interchain interations of the light-emitting H-acceptor units, and similar effects occur in their H-bonded dendritic complexes. In addition, red shifts of photoluminescence (PL) emissions in H-bonded dendritic complexes can be tuned up to 61 nm. Furthermore, H-bonded dendritic complexes excited at 305 nm of OXD absorption can create a stronger fluorescence than that excited at 397 nm of PBB absorption, indicating that the intensity of the sensitized emission of PBB (by energy transfer from OXD absorption at 305 nm) is even stronger than that of a direct emission of PBB (by merely PBB absorption at 397 nm). The OXD dendritic wedges in H-bonded dendritic complexes can lower the LUMO energy levels and provide a better electron injection property. H-acceptor polymer P4 and its H-bonded dendritic complexes showed electroluminescence (EL) emissions in the range of 464-519 nm from blue to green. In addition, a PLED device containing H-bonded dendritic complex P4/G1COOH showed an EL emission of 519 nm under a turn-on voltage of 6.5 V. with a maximum luminance of 408 cd/m(2) at 18 V and a luminance efficiency of 0.39 cd/A at 100 mA/cm(2), respectively.Item type:Item, Exploring the Distribution of Citrinin Biosynthesis Related Genes among Monascus Species(2008-12-24) ;Chen, Yi-Pei ;Tseng, Ching-Ping ;Chien, I-Ling ;Wang, Wei-YiLiaw, Li-LingCitrinin, a hepato-nephrotoxic compound to humans, can be produced by the food fermentation microorganisms Monascus spp. In this study, we investigated the distribution of mycotoxin citrinin biosynthesis genes in 18 Monascus strains. The results show that the acyl-transferase and keto-synthase domains of the pksCT gene encoding citrinin polyketide synthase were found in Monascus purpureus, Monascus kaoliang, and Monascus sanguineus. Furthermore, the ctnA gene, a major activator for citrinin biosynthesis, was found in M. purpureus and U kaoliang, but was absent in M. sanguineus. The orf3 gene encoding oxygenase, located between pksCT and ctnA, was also present in M. purpureus and M. kaoliang. The pksCT gene was highly conserved in M. purpureus, U kaoliang, and M. sanguineus, while the ctnA and orf3 genes were shown to be highly homologous in M. purpureus and M. kaoliang. In contrast, the PCR and Southern blot analyses suggest that pksCT, ctnA, and orf3 were absent or significantly different in Monascus pilosus, Monascus ruber, Monascus barkeri, Monascus floridanus, Monascus lunisporas, and Monascus pallens. A citrinin-producing phenotype was detected only in M. purpureus and M., kaoliang using high performance liquid chromatography (HPLC). These results clearly indicate that the highly conserved citrinin gene cluster in M. purpureus and U kaoliang carry out citrinin biosynthesis. In addition, according to the phylogenetic subgroups established with the beta-tubulin gene, the citrinin gene cluster can group the species of Monascus.Item type:Item, Reproducible resistive switching behavior in sputtered CeO(2) polycrystalline films(2008-12-25) ;Lin, Chih-Yang ;Lee, Dai-Ying ;Wang, Sheng-Yi ;Lin, Chun-ChiehTseng, Tseung-YuenSputter-deposited CeO(2) film in the metal-insulator-metal structure exhibits repeatable resistive switching behavior under voltage sweep. Based on the X-ray diffraction patterns and the cross-sectional scanning electron microscope image, the CeO(2) film is polycrystalline with columnar grains perpendicular to the bottom electrode. Moreover, due to the symmetric device structure of Pt/CeO(2)/Pt, the resistive switching behavior is independent of bias polarity so that both positive and negative voltages can switch the device from high conducting state (ON-state) into low conducting state (OFF-state) and then back to ON-state, which is named non-polar resistive switching. The resistance ratio between two memory states is about five orders of magnitude, which is stable over 10(4) S at 0.3 V stress. in addition, the resistance ratio decreases with increasing the current compliance during forming process. The stability of ON-state, OFF-state, and as-deposited film state (the state before performing forming process) against temperature is also investigated in this study, showing that the OFF-state is less stable. (C) 2008 Elsevier B.V. All rights reserved.Item type:Item, Effect of thermal treatment on resistive switching characteristics in Pt/Ti/Al2O3/Pt devices(2008-12-25) ;Lin, Chih-Yang ;Lee, Dai-Ying ;Wang, Sheng-Yi ;Lin, Chun-ChiehTseng, Tseung-YuenResistive switching characteristics of Pt/Ti/Al2O3/Pt memory devices annealed at various temperatures including 400 degrees C, 500 degrees C and 600 degrees C for 1 h under ambient condition were investigated in the study. The Al2O3 thin films annealed at up to 600 degrees C for 1 h remain amorphous phase based on the X-ray diffraction (XRD) analyses. As increasing annealing temperature, the forming voltage (activating the pristine device) of the memory device decreases in contrast to the rising trend of the turn-on voltage (switching from high to low resistance state). However, the turn-off voltage (switching from low to high resistance state) is almost uninfluenced by thermal annealing. These phenomena might be attributed to the interdiffusion between Ti and Al2O3, based on the analyzed results of secondary ion mass spectroscopy (SIMS) and high resolution transmission electron microscope (HR-TEM). Moreover, the thermal annealing process eventually creates high conducting paths with a high density of oxygen vacancies between the two electrodes. (c) 2008 Elsevier B.V. All rights reserved.Item type:Item, 交大e-News第039期(2008-12-25) ;Secretariat國立交通大學秘書室Item type:Item, Reproducible resistive switching behavior in sputtered CeO2 polycrystalline films(2008-12-25) ;Lin, Chih-Yang ;Lee, Dai-Ying ;Wang, Sheng-Yi ;Lin, Chun-ChiehTseng, Tseung-YuenSputter-deposited CeO2 film in the metal-insulator-metal structure exhibits repeatable resistive switching behavior under voltage sweep. Based on the X-ray diffraction patterns and the cross-sectional scanning electron microscope image, the CeO2 film is polycrystalline with columnar grains perpendicular to the bottom electrode. Moreover, due to the symmetric device structure of Pt/CeO2/Pt, the resistive switching behavior is independent of bias polarity so that both positive and negative voltages can switch the device from high conducting state (ON-state) into low conducting state (OFF-state) and then back to ON-state, which is named non-polar resistive switching. The resistance ratio between two memory states is about five orders of magnitude, which is stable over 10(4) S at 0.3 V stress. in addition, the resistance ratio decreases with increasing the current compliance during forming process. The stability of ON-state, OFF-state, and as-deposited film state (the state before performing forming process) against temperature is also investigated in this study, showing that the OFF-state is less stable. (C) 2008 Elsevier B.V. All rights reserved.Item type:Item, Optic fiber bragg grating sensor(2008-12-25) ;Huang, An-BinKao, Sheng-ChiangThe optic fiber Bragg grating (FBG) sensor comprises of an elastic circular diaphragm and one or two FBG attached to the bottom surface of the elastic circular diaphragm. Two ends of the FBG are connected to an optic fiber for signal transmission. The FBG sensor readouts are independent of temperature fluctuation. The FBG sensor mechanism according to the present invention may be applied for various purposes such as a gauge pressure transducer, differential pressure transducer, load cell and displacement transducer with distributive capabilities.Item type:Item, Effect of thermal treatment on resistive switching characteristics in Pt/Ti/Al(2)O(3)/Pt devices(2008-12-25) ;Lin, Chih-Yang ;Lee, Dai-Ying ;Wang, Sheng-Yi ;Lin, Chun-ChiehTseng, Tseung-YuenResistive switching characteristics of Pt/Ti/Al(2)O(3)/Pt memory devices annealed at various temperatures including 400 degrees C, 500 degrees C and 600 degrees C for 1 h under ambient condition were investigated in the study. The Al(2)O(3) thin films annealed at up to 600 degrees C for 1 h remain amorphous phase based on the X-ray diffraction (XRD) analyses. As increasing annealing temperature, the forming voltage (activating the pristine device) of the memory device decreases in contrast to the rising trend of the turn-on voltage (switching from high to low resistance state). However, the turn-off voltage (switching from low to high resistance state) is almost uninfluenced by thermal annealing. These phenomena might be attributed to the interdiffusion between Ti and Al(2)O(3), based on the analyzed results of secondary ion mass spectroscopy (SIMS) and high resolution transmission electron microscope (HR-TEM). Moreover, the thermal annealing process eventually creates high conducting paths with a high density of oxygen vacancies between the two electrodes. (c) 2008 Elsevier B.V. All rights reserved.Item type:Item, Item type:Item, Item type:Item, 愛情故事館(2008-12-28) ;羅佩雯 ;Department of Communication and Technology傳播與科技學系用愛情打造的故事館 進去裡面有童話世界的感覺 很夢幻!Item type:Item, Item type:Item, Item type:Item, Item type:Item, 《情非得已之生存之道》(2008-12-28) ;梁素茵 ;Department of Communication and Technology傳播與科技學系政治混亂、媒體充斥著羶色腥……,這樣的生活環境讓台灣人生活得越來越不快樂,在這樣的背景之下,導演鈕承澤決定拍一部揭露自己在這個混亂社會中生活的電影──《情非得已之生存之道》。Item type:Item, 中之生,西之死(2008-12-28) ;何宛芯 ;Department of Communication and Technology傳播與科技學系人從何而來,又將往哪裡去,這道難題一直為人類所思量著。早在數千年以前,中西兩方的祖先就為生死提出了不同的見解,以致今日中西的人生態度如此迥異,連帶影響了千年來雙方在藝術美學上的成就Item type:Item, 進入羅爾德的奇幻世界(2008-12-28) ;王成宇 ;Department of Communication and Technology傳播與科技學系介紹一代兒童文學大師羅爾德達爾的兒童文學系列