Browsing by Issue Date, starting with "2008-12-25"

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Reproducible resistive switching behavior in sputtered CeO(2) polycrystalline films
(2008-12-25)
Lin, Chih-Yang
;
Lee, Dai-Ying
;
Wang, Sheng-Yi
;
Lin, Chun-Chieh
;
Tseng, Tseung-Yuen
Sputter-deposited CeO(2) film in the metal-insulator-metal structure exhibits repeatable resistive switching behavior under voltage sweep. Based on the X-ray diffraction patterns and the cross-sectional scanning electron microscope image, the CeO(2) film is polycrystalline with columnar grains perpendicular to the bottom electrode. Moreover, due to the symmetric device structure of Pt/CeO(2)/Pt, the resistive switching behavior is independent of bias polarity so that both positive and negative voltages can switch the device from high conducting state (ON-state) into low conducting state (OFF-state) and then back to ON-state, which is named non-polar resistive switching. The resistance ratio between two memory states is about five orders of magnitude, which is stable over 10(4) S at 0.3 V stress. in addition, the resistance ratio decreases with increasing the current compliance during forming process. The stability of ON-state, OFF-state, and as-deposited film state (the state before performing forming process) against temperature is also investigated in this study, showing that the OFF-state is less stable. (C) 2008 Elsevier B.V. All rights reserved.
Effect of thermal treatment on resistive switching characteristics in Pt/Ti/Al2O3/Pt devices
(2008-12-25)
Lin, Chih-Yang
;
Lee, Dai-Ying
;
Wang, Sheng-Yi
;
Lin, Chun-Chieh
;
Tseng, Tseung-Yuen
Resistive switching characteristics of Pt/Ti/Al2O3/Pt memory devices annealed at various temperatures including 400 degrees C, 500 degrees C and 600 degrees C for 1 h under ambient condition were investigated in the study. The Al2O3 thin films annealed at up to 600 degrees C for 1 h remain amorphous phase based on the X-ray diffraction (XRD) analyses. As increasing annealing temperature, the forming voltage (activating the pristine device) of the memory device decreases in contrast to the rising trend of the turn-on voltage (switching from high to low resistance state). However, the turn-off voltage (switching from low to high resistance state) is almost uninfluenced by thermal annealing. These phenomena might be attributed to the interdiffusion between Ti and Al2O3, based on the analyzed results of secondary ion mass spectroscopy (SIMS) and high resolution transmission electron microscope (HR-TEM). Moreover, the thermal annealing process eventually creates high conducting paths with a high density of oxygen vacancies between the two electrodes. (c) 2008 Elsevier B.V. All rights reserved.
交大e-News第039期
(2008-12-25)
Secretariat
;
國立交通大學秘書室
Reproducible resistive switching behavior in sputtered CeO2 polycrystalline films
(2008-12-25)
Lin, Chih-Yang
;
Lee, Dai-Ying
;
Wang, Sheng-Yi
;
Lin, Chun-Chieh
;
Tseng, Tseung-Yuen
Sputter-deposited CeO2 film in the metal-insulator-metal structure exhibits repeatable resistive switching behavior under voltage sweep. Based on the X-ray diffraction patterns and the cross-sectional scanning electron microscope image, the CeO2 film is polycrystalline with columnar grains perpendicular to the bottom electrode. Moreover, due to the symmetric device structure of Pt/CeO2/Pt, the resistive switching behavior is independent of bias polarity so that both positive and negative voltages can switch the device from high conducting state (ON-state) into low conducting state (OFF-state) and then back to ON-state, which is named non-polar resistive switching. The resistance ratio between two memory states is about five orders of magnitude, which is stable over 10(4) S at 0.3 V stress. in addition, the resistance ratio decreases with increasing the current compliance during forming process. The stability of ON-state, OFF-state, and as-deposited film state (the state before performing forming process) against temperature is also investigated in this study, showing that the OFF-state is less stable. (C) 2008 Elsevier B.V. All rights reserved.
Optic fiber bragg grating sensor
(2008-12-25)
Huang, An-Bin
;
Kao, Sheng-Chiang
The optic fiber Bragg grating (FBG) sensor comprises of an elastic circular diaphragm and one or two FBG attached to the bottom surface of the elastic circular diaphragm. Two ends of the FBG are connected to an optic fiber for signal transmission. The FBG sensor readouts are independent of temperature fluctuation. The FBG sensor mechanism according to the present invention may be applied for various purposes such as a gauge pressure transducer, differential pressure transducer, load cell and displacement transducer with distributive capabilities.
Effect of thermal treatment on resistive switching characteristics in Pt/Ti/Al(2)O(3)/Pt devices
(2008-12-25)
Lin, Chih-Yang
;
Lee, Dai-Ying
;
Wang, Sheng-Yi
;
Lin, Chun-Chieh
;
Tseng, Tseung-Yuen
Resistive switching characteristics of Pt/Ti/Al(2)O(3)/Pt memory devices annealed at various temperatures including 400 degrees C, 500 degrees C and 600 degrees C for 1 h under ambient condition were investigated in the study. The Al(2)O(3) thin films annealed at up to 600 degrees C for 1 h remain amorphous phase based on the X-ray diffraction (XRD) analyses. As increasing annealing temperature, the forming voltage (activating the pristine device) of the memory device decreases in contrast to the rising trend of the turn-on voltage (switching from high to low resistance state). However, the turn-off voltage (switching from low to high resistance state) is almost uninfluenced by thermal annealing. These phenomena might be attributed to the interdiffusion between Ti and Al(2)O(3), based on the analyzed results of secondary ion mass spectroscopy (SIMS) and high resolution transmission electron microscope (HR-TEM). Moreover, the thermal annealing process eventually creates high conducting paths with a high density of oxygen vacancies between the two electrodes. (c) 2008 Elsevier B.V. All rights reserved.
《女人至上》找回真實自我
(2008-12-28)
黃湘茹
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Department of Communication and Technology
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傳播與科技學系
...
WOW！紅野狼出沒交大校園
(2008-12-28)
楊雅筑
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Department of Communication and Technology
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傳播與科技學系
紅野狼影評
愛情故事館
(2008-12-28)
羅佩雯
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Department of Communication and Technology
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傳播與科技學系
用愛情打造的故事館進去裡面有童話世界的感覺很夢幻!
悠閒，玻工館
(2008-12-28)
葉曉昀
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Department of Communication and Technology
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傳播與科技學系
玻工館內的景緻，給人悠閒感受。
新移民後代　教育面難關
(2008-12-28)
郭大齊
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Department of Communication and Technology
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傳播與科技學系
外籍配偶小孩之思想與教育問題
請聽我說　御宅族的心聲
(2008-12-28)
趙祿平
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Department of Communication and Technology
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傳播與科技學系
有絡腮鬍我好愛他
《情非得已之生存之道》
(2008-12-28)
梁素茵
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Department of Communication and Technology
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傳播與科技學系
政治混亂、媒體充斥著羶色腥……，這樣的生活環境讓台灣人生活得越來越不快樂，在這樣的背景之下，導演鈕承澤決定拍一部揭露自己在這個混亂社會中生活的電影──《情非得已之生存之道》。
中之生，西之死
(2008-12-28)
何宛芯
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Department of Communication and Technology
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傳播與科技學系
人從何而來，又將往哪裡去，這道難題一直為人類所思量著。早在數千年以前，中西兩方的祖先就為生死提出了不同的見解，以致今日中西的人生態度如此迥異，連帶影響了千年來雙方在藝術美學上的成就
進入羅爾德的奇幻世界
(2008-12-28)
王成宇
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Department of Communication and Technology
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傳播與科技學系
介紹一代兒童文學大師羅爾德達爾的兒童文學系列
《玫瑰的性別》
(2008-12-28)
蔡尚翰
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Department of Communication and Technology
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傳播與科技學系
「玫瑰即使不叫玫瑰，聞起來仍然一樣甜美。」
《三杯茶》
(2008-12-28)
陳妙寧
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Department of Communication and Technology
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傳播與科技學系
三杯茶講述一名登山人士在登三失敗後而遇到當地人幫助，因而承諾當地村落蓋一所學校。
總編輯的話
(2008-12-28)
楊純芳
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Department of Communication and Technology
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傳播與科技學系
話
愛你，所以安養你？
(2008-12-28)
洪效凡
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Department of Communication and Technology
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傳播與科技學系
老人需要受到細心的照顧，將老邁的父母委託於安養院，這是現代人常採取的方式。可是安養院並不是個家，老人在裡面只是受於規律的生活以保持生命延續，真正需要的，還是家人的關心。
Theoretical study of noble-gas containing metal halides
(2008-12-28)
Mou, Chun-Hao
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Witek, Henryk A.
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應用化學系
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應用化學系分子科學碩博班
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Department of Applied Chemistry
Equilibrium structures, energetic stability, and vibrational frequencies of noble-gas containing metal halides, MNgX and NgMX (Ng=Ar,Kr,Xe; M=Cu,Ag,Au; X=F,Cl,Br) have been studied computationally using coupled cluster, density functional, and perturbation techniques. The NgMX species have been found to be stable with the Ng-M bond dissociation energy of 2-22 kcal/mol. Our calculations indicate that the argon-containing MNgX compounds are unstable or very weakly bound. For most of the krypton- and xenon-containing species, well-defined (MNg)(delta+)X(delta-) equilibrium structures have been located. Large MNgX -> Ng+MX reorganization barriers for some of the MNgX molecules (e.g., AuXeF and AuXeCl) indicate their considerable kinetic stability. The presented results suggest that direct observation of the most stable of the MNgX molecules might be possible in experiment.