Browsing by Issue Date, starting with "2009-02-26"

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CONTROL APPARATUS AND METHOD
(2009-02-26)
Lee, Chia Hoang
;
Lin, Jian Liang
The invention discloses a control apparatus capable of providing a user with a control over an object displayed on a display apparatus by a pointing device. The control apparatus includes an image capturing module, a separating module, a positioning module, a constructing module, and a processing module. The image capturing module is used to record an image sequence included N images. The separating module is applied to capture the pointing device image related to the pointing device from each image. The positioning module is used for calculating a specific point of the pointing device image of each image to generate a first set of specific point information. The constructing module is applied to generate a trajectory in accordance with a pre-defined criterion and the first set of specific point information. Additionally, the processing module is used to analyze the trajectory and generate a control signal to control the object.
GROUP AUTHENTICATION METHOD
(2009-02-26)
Chen, Yu-Wen
;
Wang, Jui-Tang
;
Tseng, Chien-Chao
A group authentication method adaptable to a communication system is disclosed. The communication system includes a user group, a serving network, and a home network. The user group includes at least one mobile station. The home network pre-distributes a group authentication key to itself and all the mobile stations in the same user group and generates a mobile station authentication key for each mobile station. The home network generates a group list for recording related information of the user group. The home network has a database for recording the group list. The serving network has a database for recording the group list and a group authentication data received from the home network. The group authentication method includes following steps. The serving network performs an identification action to a mobile station. The communication system performs a full authentication action or a local authentication action according to the result of the identification action.
METAL OXIDE NANO-COMPOSITE MAGNETIC MATERIAL, FABRICATION METHOD, AND METHOD FOR LINKAGE, ENRICHMENT, AND ISOLATION OF PHOSPHORYLATED SPECIES
(2009-02-26)
CHEN, YU-CHIE
;
CHEN, CHENG-TAI
;
CHEN, WEI-YU
;
LO, CHUN-YUEN
;
LIN, HONG-YI
The present invention relates to a metal oxide nano-composite magnetic material, fabrication method, and method for linkage, enrichment, and isolation of phosphorylated species. The metal oxide nano-composite magnetic material comprises the magnetic iron oxide nanoparticle, a silica layer immobilized onto the magnetic iron oxide nanoparticle and a metal oxide layer coated onto the silica layer. The magnetic iron oxide nanoparticles can be used for absorbing microwave radiation to accelerate the enrichment and linkage for phosphorylated species onto the metal oxide nano-composite magnetic material. Furthermore, the magnetic property of magnetic iron oxide nanoparticles leads to isolation of the metal oxide nano-composite magnetic material-target species conjugates by simply employing an external magnetic field. The specificity of the metal oxide on the surface of the metal oxide nano-composite magnetic material for phosphorylated species also leads to the linkage/enrichment of phosphorylated species with high selectivity in a short time (extracting time is 30˜90 seconds).
Nonlinear generalized synchronization of chaotic systems by pure error dynamics and elaborate nondiagonal Lyapunov function
(2009-02-28)
Ge, Zheng-Ming
;
Chang, Ching-Ming
;
機械工程學系
;
Department of Mechanical Engineering
By applying pure error dynamics and elaborate nondiagonal Lyapunov function, the nonlinear generalized synchronization is studied in this paper. Instead of current mixed error dynamics in which master state variables and slave state variables are presented, the nonlinear generalized synchronization can be obtained by pure error dynamics without auxiliary numerical simulation. The elaborate nondiagonal Lyapunov function is applied rather than current monotonous square sum Lyapunov function deeply weakening the powerfulness of Lyapunov direct method. Both autonomous and nonautonomous double Mathieu systems are used as examples with numerical simulations. (C) 2007 Elsevier Ltd. All rights reserved.
Material functions of liquid n-hexadecane under steady shear via nonequilibrium molecular dynamics simulations: Temperature, pressure, and density effects
(2009-02-28)
Tseng, Huan-Chang
;
Wu, Jiann-Shing
;
Chang, Rong-Yeu
;
應用化學系
;
Department of Applied Chemistry
Computer experiments of rheology regarding the effects of temperature (T), pressure (P), and density (rho) on steady shear flow material functions, which include viscosity (eta) and first and second normal stress coefficients (psi(1) and psi(2)) depending on shear rate (gamma), have been conducted via nonequilibrium molecular dynamics simulations for liquid n-hexadecane. Straightforwardly, using both characteristic values of a zero-shear-rate viscosity and critical shear rate, eta-gamma flow curves are well normalized to achieve the temperature-, pressure-, and density-invariant master curves, which can be formulary described by the Carreau-Yasuda rheological constitutive equation. Variations in the rate of shear thinning, obviously exhibiting in eta-gamma, psi(1)-gamma, and -psi(2)-gamma relationships, under different T, P, and rho values, are concretely revealed through the power-law model's exponent. More importantly, at low shear rates, the fluid explicitly possesses Newtonian fluidic characteristics according to both manifestations; first and second normal stress differences decay to near zero, while nonequilibrium states are close to equilibrium ones. Significantly, the tendency to vary of the degree of shear thinning in rheology is qualitatively contrary to that of shear dilatancy in thermodynamics. In addition, a convergent transition point is evidently observed in the -psi(2)/psi(1)-gamma curves undergoing dramatic variations, which should be associated with shear dilatancy, as addressed analytically.
Mining decision rules on data streams in the presence of concept drifts
(2009-03-01)
Tsai, Cheng-Jung
;
Lee, Chien-I.
;
Yang, Wei-Pang
;
資訊工程學系
;
Department of Computer Science
In a database, the concept of all example might change along with time, which is known as concept drift. When the concept drift occurs, the classification model built by using the old dataset is not suitable for predicting a new dataset. Therefore, the problem of concept drift has attracted a lot of attention in recent years. Although many algorithms have been proposed to solve this problem, they have not been able to provide users with a satisfactory solution to concept drift. That is, the current research about concept drift focuses only on updating the classification model. However, real life decision makers might be very interested in the rules of concept drift. For example, doctors desire to know the root causes behind variation in the causes and development of disease. In this paper, we propose a concept drift rule mining tree, called CDR-Tree, to accurately discover the underlying rule governing concept drift. The main contributions of this paper are: (a) we address the problem of mining concept-drifting rules which has not been considered in previously developed classification schemes; (b) we develop a method that call accurately mine rules governing concept drift: (c) we develop a method that should classification models be required, call efficiently and accurately generate such models via a simple extraction procedure rather than constructing them anew; and (d) we propose two strategies to reduce the complexity of concept-drifting, rules mined by our CDR-Tree. (C) 2007 Elsevier Ltd. All rights reserved.
Full-field measurement of the phase retardation for birefringent elements by using common path heterodyne interferometry
(2009-03-01)
Chen, Yen-Liang
;
Su, Der-Chin
;
光電工程學系
;
Department of Photonics
A collimated heterodyne light passes through the tested material and an analyzer, full-field interference signals are taken by a fast CMOS camera. The series of interference intensities recorded at any pixel are the sampling points of a sinusoidal signal. From those points, the associated argument of that pixel can be derived by a least-square sine fitting algorithm on IEEE 1241 Standards. Subtracting the average argument of the reference signal, the phase retardation of that pixel can be obtained. The phase retardations of other pixels can be obtained similarly. Its validity is demonstrated. (C) 2008 Elsevier Ltd. All rights reserved
A FAST MULTISPRITE GENERATOR WITH NEAR-OPTIMUM CODING BIT-RATE
(2009-03-01)
Kuo, I-Sheng
;
Chen, Ling-Hwei
;
資訊工程學系
;
Department of Computer Science
Sprite coding, which can increase the coding efficiency of backgrounds greatly, is a novel technology adopted in MPEG-4 object-based coding. Due to the geometric transformation applied to each nonreference frame in the procedure of sprite coding, the generated sprite is distorted and the available view angles relative to the reference frame are restricted. These problems can be resolved by using multiple sprites. An optimal multisprite generator has been proposed by Farin et al., but the optimal method requires high computation in the sprite coding cost. To treat this disadvantage, a fast multisprite partition algorithm is proposed in this paper based on frame translations and scalings. The proposed algorithm divides a video sequence into several subsequences, and a sprite is generated from each subsequence. The experimental results show that the executing speed of the proposed method is increased by 10 to 190 times than the optimal method, with the total size of generated sprites is slightly higher and the qualities of generated sprites are preserved.
Threshold-Voltage Fluctuation of Double-Gated Poly-Si Nanowire Field-Effect Transistor
(2009-03-01)
Hsu, Hsing-Hui
;
Lin, Horng-Chih
;
Chan, Leng
;
Huang, Tiao-Yuan
;
電子工程學系及電子研究所
In this letter, the fluctuation characteristics of polycrystalline silicon (poly-Si) nanowire (NW) thin-film transistors (TFTs) with independently controlled double-gate configuration were studied. The defects existing in the NW channels are identified as one of the major sources for the fluctuation. The passivation of these defects by plasma treatment is shown to be effective for reducing the fluctuation. We have also found that the fluctuation is closely related to the operation modes. When only one of the gates is employed as the driving gate to control the switching behavior of the device, an optimum bias for the other gate can be found for minimizing the fluctuation.
Variation Analysis of Sphygmogram to Assess Cardiovascular System under Meditation
(2009-03-01)
Liu, Chuan-Yi
;
Wei, Ching-Chuan
;
Lo, Pei-Chen
;
電控工程研究所
;
電信工程研究所
In this article, we studied how meditation affects the characteristics of the cardiovascular system, mainly based on blood pressure waveforms (BPW). Four parameters derived from BPW include the rising slope (h(1)/t(1)), normalized height of T wave (h(3)/h(1)), normalized height of V(3) valley (h(4)/h(1)) and normalized height of D wave (h(5)/h(1)), where t(1) and h(i), i 1, ,5 are quantitative features of the BPW waveform pattern. A larger value of h(1)/t(1) reflects better heart ejection ability and aorta compliance. A larger value of h(3)/h(1) may infer an arterial system with good elasticity. The decrease (increase) of h(4)/h(1) parameter indicates the decrease (increase) of peripheral resistance of vessels. A larger value of h(5)/h(1) indicates better artery elasticity and aortic valve function. In comparison with the control group, Zen-meditation practitioners have more after-meditation h(1)/t(1), h(3)/h(1) and h(5)/h(1) increase, with more h(4)/h(1) decrease, with statistical significance (P 0.05). The observation allows us to infer that Zen meditation may effectively improve relevant characteristics of the cardiovascular system.
Interfacial Reactions and Bonding Strength of Sn-xAg-0.5Cu/Ni BGA Solder Joints
(2009-03-01)
Lin, K. S.
;
Huang, H. Y.
;
Chou, C. P.
;
機械工程學系
;
Department of Mechanical Engineering
The present study details the microstructure evolution of the interfacial intermetallic compounds (IMCs) layer formed between the Sn-xAg-0.5Cu (x = 1, 3, and 4 wt.%) solder balls and electroless Ni-P layer, and their bond strength variation during aging. The interfacial IMCs layer in the as-reflowed specimens was only (Cu,Ni)(6)Sn(5) for Sn-xAg-0.5Cu solders. The (Ni,Cu)(3)Sn(4) IMCs layer formed when Sn-4Ag-0.5Cu and Sn-3Ag-0.5Cu solders were used as aging time increased. However, only (Cu,Ni)(6)Sn(5) IMCs formed in Sn-1Ag-0.5Cu solders, when the aging time was extended beyond 1500 h. Two factors are expected to influence bond strength and fracture modes. One of the factors is that the interfacial (Ni,Cu)(3)Sn(4) IMCs formed at the interface and the fact that fracture occurs along the interface. The other factor is Ag(3)Sn IMCs coarsening in the solder matrix, and fracture reveals the ductility of the solder balls. The above analysis indicates that during aging, the formation of interfacial (Ni,Cu)(3)Sn(4) IMCs layers strongly influences the pull strength and the fracture behavior of a solder joint. This fact demonstrates that interfacial layers are key to understanding the changes in bonding strength. Additionally, comparison of the bond strength with various Sn-Ag-Cu lead-free solders for various Ag contents show that the Sn-1Ag-0.5Cu solder joint is not sensitive to extended aging time.
Electrical and optical properties of ZnO:Al thin films grown by magnetron sputtering
(2009-03-01)
Bai, Shr-Nan
;
Tseng, Tseung-Yuen
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
The properties of transparent conductive ZnO:Al thin films grown by R.F. magnetron sputtering method are investigated. The working pressure (argon gas) is changed from 2.5 to 40.0 mTorr to study its influence on the characteristics of ZnO:Al thin films. The ZnO:Al thin films have better texture due to the increase in the surface mobility, which resulted from the increase in the mean free path of sputtering gas under lower working pressure. The microstructure of ZnO:Al films is found to be affected obviously by changing the working pressure. It is shown that the grain size of ZnO:Al thin films decreases with the increase of working pressure. The X-ray diffraction patterns indicate that the poor crystallized structure of ZnO:Al films is obtained at higher working pressure. Except 40 mTorr, the highly (002)-oriented ZnO:Al thin films can be found at the measured range of working pressure. Moreover, the growth rate of the films decreases from 1.5 to 0.5 nm/min as the working pressure increases from 2.5 to 40.0 mTorr. The results of optical transmittance measurement of ZnO:Al thin films reveal a high transmittance (> 80%) in visible region and exhibit a sharp absorption edge at wavelength about 350 nm.
Design of Power-Rail ESD Clamp Circuit With Ultra-Low Standby Leakage Current in Nanoscale CMOS Technology
(2009-03-01)
Wang, Chang-Tzu
;
Ker, Ming-Dou
;
電機學院
;
College of Electrical and Computer Engineering
An ultra-low-leakage power-rail ESD clamp circuit, composed of the SCR device and new ESD detection circuit, has been proposed with consideration of gate current to reduce the standby leakage current. By controlling the gate current of the devices in the ESD detection circuit under a specified bias condition, the whole power-rail ESD clamp circuit can achieve an ultra-low standby leakage current. The new proposed circuit has been fabricated in a 1 V 65 nm CMOS process for experimental verification. The new proposed power-rail ESD clamp circuit can achieve 7 kV HBM and 325 V MM ESD levels while consuming only a standby leakage current of 96 nA at 1 V bias in room temperature and occupying an active area of only 49 mu m x 21 mu m.
Formation and Nonvolatile Memory Application of Ge Nanocrystals by Using Internal Competition Reaction of Si1.33Ge0.67O2 and Si2.67Ge1.33N2 Layers
(2009-03-01)
Chen, Wei-Ren
;
Chang, Ting-Chang
;
Hsieh, Yen-Ting
;
Chang, Chun-Yen
;
電子工程學系及電子研究所
In this study, the authors proposed a formation mechanism of Ge nanocrystals (NCs) embedded in the dielectric by using Si1.33Ge0.67O2 and Si2.67Ge1.33N2 films for nonvolatile memory (NVM) application. Because of internal competition reaction, this formation process reduced the thermal budget and eliminated the use of high-pressure H-2 treatment or steam process. The metal/oxide/insulator/oxide/silicon capacitor structure with NCs was also studied, and exhibited hysteresis characteristics after electrical operation. Transmission electron microscopy clearly shows the shape and density of NCs in the dielectric. In addition, the obvious memory window can be used to define "1" and "0" states at low-voltage program operation. Furthermore, good endurance and retention characteristics are exhibited for the Ge NCs embedded in SiNx structure. Besides, this technology is suitable for the current NVM fabrication and low-power device application.
儒家的現代性？
(國立陽明交通大學出版社, 2009-03-01)
楊儒賓
Application of Optimal Control and Fuzzy Theory for Dynamic Groundwater Remediation Design
(2009-03-01)
Chu, Hone-Jay
;
Chang, Liang-Cheng
;
土木工程學系
;
Department of Civil Engineering
Obtaining optimal solutions for time-varying groundwater remediation design is a challenging task. A novel procedure first employs input/output data sets obtained by constrained differential dynamic programming (CDDP). Then the Adaptive-Network-Based Fuzzy Inference System (ANFIS), which is a fuzzy inference system (FIS) implemented in the adaptive network framework, is applied to acquire time-varying pumping rates. Results demonstrate that the FIS is an efficient way of groundwater remediation design.
The effect of AlN buffer growth parameters on the defect structure of GaN grown on sapphire by plasma-assisted molecular beam epitaxy
(2009-03-01)
Wong, Yuen-Yee
;
Chang, Edward Yi
;
Yang, Tsung-Hsi
;
Chang, Jet-Rung
;
Chen, Yi-Cheng
The defect structure of GaN film grown on sapphire by plasma-assisted molecular beam epitaxy (PAMBE) depends on the growth temperature and thickness of the aluminum nitride (AlN) buffer layer. High-resolution X-ray diffraction was used to measure symmetric (0 0 0 2) and asymmetric (1 0 (1) over bar 2) rocking curve (omega-scans) broadening, which allowed the estimation of screw threading dislocation (TD) and edge TD densities, respectively. For GaN grown on lower-temperature buffer, the density of screw TD was increased while the density of edge TD was decreased. Further examinations revealed that the edge TD was closely related to stress in GaN film and the screw TD was controlled by AlN surface roughness. Since the GaN defect was dominated by edge TD, the total TD was also effectively suppressed with the use of lower-temperature buffer with appropriate thickness. (C) 2009 Elsevier B.V. All rights reserved.
Purification, crystallization and preliminary X-ray analysis of an aminoacylhistidine dipeptidase (PepD) from Vibrio alginolyticus
(2009-03-01)
Chang, Chin-Yuan
;
Hsieh, Yin-Cheng
;
Wang, Ting-Yi
;
Chen, Chun-Jung
;
Wu, Tung-Kung
The aminoacylhistidine dipeptidase (PepD) protein encoded by Vibrio alginolyticus pepD was successfully overexpressed and characterized and the putative active-site residues responsible for metal binding and catalysis were identified. The purified enzyme contained two zinc ions per monomer. The recombinant dipeptidase enzyme, which was identified as a homodimer in solution, exhibited broad substrate specificity for Xaa-His dipeptides, with highest activity towards the His-His dipeptide. The purified protein was crystallized using the hanging-drop vapour-diffusion method. Preliminary crystallographic analysis showed that the crystal belonged to space group P6(1) or P6(5), with unit-cell parameters a = b = 80.42, c = 303.11 angstrom. The crystal contained two molecules per asymmetric unit and the predicted solvent content was 53.4%.
AlGaInAs/InP eye-safe laser pumped by a Q-switched Nd:GdVO(4) laser
(2009-03-01)
Huang, S. C.
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Chang, H. L.
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Su, K. W.
;
Li, A.
;
Liu, S. C.
An AlGaInAs quantum-well structure grown on a Fe-doped InP transparent substrate is developed to be a gain medium in a high-peak-power nanosecond laser at 1570 nm. Using an actively Q-witched 1064 nm laser to pump the gain chip, an average output power of 135 mW is generated at a pulse repetition rate of 30 kHz and an average pump power of 1.25 W. At a pulse repetition rate of 20 kHz, the peak output power is up to 290 W at a peak pump power of 2.3 kW.
Parameter Estimation/Sensitivity Analysis for an Aquifer Test with Skin Effect
(2009-03-01)
Chen, Yen-Ju
;
Yeh, Hund-Der
;
環境工程研究所
;
Institute of Environmental Engineering
Aquifer information carried by aquifer test data may be affected by the presence of a finite thickness skin around the wellbore. The mathematical treatment for an aquifer accounting for the skin zone can be characterized by five parameters, that is, the outer radius of the skin zone and the transmissivity and storativity for each of the skin and aquifer zones. Sensitivity analysis was performed to examine the ground water flow behavior in the skin and aquifer zones in terms of the constant-head test (CHT) data. The simulated annealing procedure was applied to simultaneously determine the skin and aquifer parameters from the analysis of CHT data. Toward the previously mentioned goals, four suites of CHT data were analyzed in this article. The analyses of wellbore flow rate at the test well and the specific drawdown at the observation well gave accurate estimates for the skin and aquifer parameters, respectively. Only the skin thickness and both the skin and the aquifer diffusivities could be accurately estimated from the analysis of drawdown data in the observation well. The estimates for all skin and aquifer parameters from the composite analysis of flow rate and drawdown data were the most accurate. The results of sensitivity analyses and parameter estimations provide instructive references in the analysis of the skin-affected CHT data.