Browsing by Issue Date, starting with "2009-06-20"
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Item type:Item, Liquid crystal panel for high efficiency barrier type autostereoscopic three-dimensional displays(2009-06-20) ;Chen, Cheng-Huan ;Huang, Yi-Pai ;Chuang, Shang-Chih ;Wu, Chi-LinShieh, Han-Ping D.An autostereoscopic display with parallax barrier attached onto a liquid crystal panel suffers from the trade-off between brightness and crosstalk. One approach for making improvement by modifying the layout of light blocking components, such as thin film transistor, storage capacitor, and protrusion, in the liquid crystal pixel has been proposed. Ray tracing simulation shows that the aperture of the slanted barrier can be significantly increased, hence increasing efficiency, while keeping the same crosstalk level if those light blocking components can be shifted to the corner of the pixel. A six-view 2.83 in. (7.19 cm) prototype has shown improvement on both brightness and crosstalk compared to its counterpart using a traditional liquid crystal panel, which demonstrates an effective approach for a high-efficiency barrier-type autostereoscopic 3D display with a liquid crystal panel. (C) 2009 Optical Society of AmericaItem type:Item, Item type:Item, Item type:Item, 發光二極體裝置以及其製造方法(2009-06-21) ;鄭裕國 ;陳勇智謝漢萍本發明提供一種發光二極體裝置及其製造方法。根據本發明之發光二極體裝置能用以穩固地安裝至少一發光二極體,並且維持該至少一發光二極體之電性導通。此外,該發光二極體裝置包含一基板、一容置結構、一固定結構以及複數個電極。該容置結構形成於該基板上,用以容納該固定結構以及該至少一發光二極體。該固定結構,設置於該容置結構中,用以固定該至少一發光二極體。該複數個電極係用以將該至少一發光二極體電連接至一電源及/或一信號源。更重要地,該容置結構係一插座狀結構或一凹槽狀結構。Item type:Item, Item type:Item, Item type:Item, Item type:Item, Item type:Item, 因為音樂而存在 日日春(2009-06-21) ;楊純芳 ;Department of Communication and Technology傳播與科技學系日日春樂團從2006年9月至今,成立了兩年多的時間,這五位清華大學的女孩,因為音樂而連接在一起。鳳凰花開的日子到來,女孩們都要畢業了,面對主唱一云的離開,她們一同許下半年的約定,半年後,等一云回國,他們將一起完成日日春的第一張專輯,只要音樂還在,日日春就在。Item type:Item, Item type:Item, Tailoring switching properties of dipolar species in ferroelectric liquid crystal with ZnO nanoparticles(2009-06-21) ;Li, Liu-Shiaun ;Huang, Jung Y. ;光電工程學系Department of PhotonicsThe capacitance-voltage (C-V) characteristics of surface-stabilized ferroelectric liquid crystal (SSFLC) cells doped with zinc oxide nanocrystals (nc-ZnO) have been studied and fitted to the Preisach model to reveal the behaviours of dipolar species. To explain the experimental results, we propose a physical picture depicting an interaction of nc-ZnO dipole with surrounding SSFLC dipolar species. Our study shows that doping nc-ZnO into FLC not only increases the contrast ratio of the cells by 10 times but also enhances the dynamic polarization of the beneficial dipolar species while minimizing the polarization response of the species with counter effects.Item type:Item, Implementation of Fuchs' model of ion diffusion charging of nanoparticles considering the electron contribution in dc-corona chargers in high charge densities(2009-06-21) ;Aliat, A. ;Hung, C. T. ;Tsai, C. J. ;Wu, J. S.機械工程學系A 1D corona discharge model coupled to a 2D-axisymmetric particle charging model are proposed in this paper to simulate nanoparticle charging process within a wire-tube air corona discharge subjected to an applied positive or negative dc voltage. This 1D discharge model provides the distribution of the electric field, the air ion and free electron concentrations for the 2D charging model which in turn solves the spatial distributions of the various charged nanoparticles within the tube. This 2D charging model takes into account the effect of electrons, on the basis of Fuchs' law usually employed in the literature for modelling of ion diffusion nanoparticle charging. The current approach is valid when the concentration of nanoparticles is much lower than the concentration of ionic species in the gas. Numerical results show that the positive air ions can be assumed to be solely responsible for the charging process in a positive air corona charger, while both the negative air ions and electrons play an important role in the negative charging. At high negative charge intensities, the effect of the electrons becomes appreciable due to their high conduction velocity. In general, the numerical results obtained are in good agreement with the experimental data reported in the literature.Item type:Item, Item type:Item, Item type:Item, Item type:Item, Item type:Item, Item type:Item, Item type:Item, Nanorod epitaxial lateral overgrowth of a-plane GaN with low dislocation density(2009-06-22) ;Ling, Shih-Chun ;Chao, Chu-Li ;Chen, Jun-Rong ;Liu, Po-ChunKo, Tsung-ShineThe crystal quality of a-plane GaN films was improved by using epitaxial lateral overgrowth on a nanorod GaN template. The investigation of x-ray diffraction showed that the strain in a-plane GaN grown on r-plane sapphire could be mitigated. The average threading dislocation density estimated by transmission electron microscopy was reduced from 3x10(10) to 3.5x10(8) cm(-2). From the temperature-dependent photoluminescence, the quantum efficiency of the a-plane GaN was enhanced by the nanorod epitaxial lateral overgrowth (NRELOG). These results demonstrated the opportunity of achieving a-plane GaN films with low dislocation density and high crystal quality via NRELOG.Item type:Item, 交大e-News第050期(2009-06-22) ;Secretariat國立交通大學秘書室