Browsing by Issue Date, starting with "2009-06-21"

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便當志工散播關懷散播愛
(2009-06-21)
梁素茵
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Department of Communication and Technology
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傳播與科技學系
便當志工
大專排球大改制各校觀望
(2009-06-21)
陳碩峰
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Department of Communication and Technology
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傳播與科技學系
123
發光二極體裝置以及其製造方法
(2009-06-21)
鄭裕國
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陳勇智
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謝漢萍
本發明提供一種發光二極體裝置及其製造方法。根據本發明之發光二極體裝置能用以穩固地安裝至少一發光二極體,並且維持該至少一發光二極體之電性導通。此外,該發光二極體裝置包含一基板、一容置結構、一固定結構以及複數個電極。該容置結構形成於該基板上,用以容納該固定結構以及該至少一發光二極體。該固定結構,設置於該容置結構中,用以固定該至少一發光二極體。該複數個電極係用以將該至少一發光二極體電連接至一電源及/或一信號源。更重要地,該容置結構係一插座狀結構或一凹槽狀結構。
The Pancakes 稚氣好聲音
(2009-06-21)
林麗珊
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Department of Communication and Technology
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傳播與科技學系
.
當web2.0遇上金盾工程
(2009-06-21)
邵奕儒
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Department of Communication and Technology
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傳播與科技學系
金盾
J家飯在台灣
(2009-06-21)
楊雅筑
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Department of Communication and Technology
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傳播與科技學系
QQ
交校園飲酒問題各執其見
(2009-06-21)
余建良
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Department of Communication and Technology
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傳播與科技學系
@@!!!
因為音樂而存在　日日春
(2009-06-21)
楊純芳
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Department of Communication and Technology
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傳播與科技學系
日日春樂團從2006年9月至今，成立了兩年多的時間，這五位清華大學的女孩，因為音樂而連接在一起。鳳凰花開的日子到來，女孩們都要畢業了，面對主唱一云的離開，她們一同許下半年的約定，半年後，等一云回國，他們將一起完成日日春的第一張專輯，只要音樂還在，日日春就在。
原住民小孩學母語困境多
(2009-06-21)
葉曉昀
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Department of Communication and Technology
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傳播與科技學系
no
Tailoring switching properties of dipolar species in ferroelectric liquid crystal with ZnO nanoparticles
(2009-06-21)
Li, Liu-Shiaun
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Huang, Jung Y.
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光電工程學系
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Department of Photonics
The capacitance-voltage (C-V) characteristics of surface-stabilized ferroelectric liquid crystal (SSFLC) cells doped with zinc oxide nanocrystals (nc-ZnO) have been studied and fitted to the Preisach model to reveal the behaviours of dipolar species. To explain the experimental results, we propose a physical picture depicting an interaction of nc-ZnO dipole with surrounding SSFLC dipolar species. Our study shows that doping nc-ZnO into FLC not only increases the contrast ratio of the cells by 10 times but also enhances the dynamic polarization of the beneficial dipolar species while minimizing the polarization response of the species with counter effects.
Implementation of Fuchs' model of ion diffusion charging of nanoparticles considering the electron contribution in dc-corona chargers in high charge densities
(2009-06-21)
Aliat, A.
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Hung, C. T.
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Tsai, C. J.
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Wu, J. S.
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機械工程學系
A 1D corona discharge model coupled to a 2D-axisymmetric particle charging model are proposed in this paper to simulate nanoparticle charging process within a wire-tube air corona discharge subjected to an applied positive or negative dc voltage. This 1D discharge model provides the distribution of the electric field, the air ion and free electron concentrations for the 2D charging model which in turn solves the spatial distributions of the various charged nanoparticles within the tube. This 2D charging model takes into account the effect of electrons, on the basis of Fuchs' law usually employed in the literature for modelling of ion diffusion nanoparticle charging. The current approach is valid when the concentration of nanoparticles is much lower than the concentration of ionic species in the gas. Numerical results show that the positive air ions can be assumed to be solely responsible for the charging process in a positive air corona charger, while both the negative air ions and electrons play an important role in the negative charging. At high negative charge intensities, the effect of the electrons becomes appreciable due to their high conduction velocity. In general, the numerical results obtained are in good agreement with the experimental data reported in the literature.
新兩性形象《女男變錯身》
(2009-06-21)
徐苾芬
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Department of Communication and Technology
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傳播與科技學系
呵呵呵呵最後一篇了
住哪好清齋交舍比一比
(2009-06-21)
王成宇
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Department of Communication and Technology
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傳播與科技學系
清交的宿舍照片比一比
虐殺儀式下的東方佳餚
(2009-06-21)
趙祿平
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Department of Communication and Technology
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傳播與科技學系
標題請慢想～
寫在一切的最後
(2009-06-21)
陳怡秀
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Department of Communication and Technology
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傳播與科技學系
總編的話
新竹影博館影像空間共享
(2009-06-21)
黃惠琳
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Department of Communication and Technology
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傳播與科技學系
最後一篇了！
Fight! 痴傻動畫戰隊
(2009-06-21)
何宛芯
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Department of Communication and Technology
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傳播與科技學系
Fight! 痴傻動畫戰隊
Nanorod epitaxial lateral overgrowth of a-plane GaN with low dislocation density
(2009-06-22)
Ling, Shih-Chun
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Chao, Chu-Li
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Chen, Jun-Rong
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Liu, Po-Chun
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Ko, Tsung-Shine
The crystal quality of a-plane GaN films was improved by using epitaxial lateral overgrowth on a nanorod GaN template. The investigation of x-ray diffraction showed that the strain in a-plane GaN grown on r-plane sapphire could be mitigated. The average threading dislocation density estimated by transmission electron microscopy was reduced from 3x10(10) to 3.5x10(8) cm(-2). From the temperature-dependent photoluminescence, the quantum efficiency of the a-plane GaN was enhanced by the nanorod epitaxial lateral overgrowth (NRELOG). These results demonstrated the opportunity of achieving a-plane GaN films with low dislocation density and high crystal quality via NRELOG.
交大e-News第050期
(2009-06-22)
Secretariat
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國立交通大學秘書室
Thermodynamic Characterization of Polymorphs in Bulk-Crystallized Syndiotactic Polystyrene via Small/Wide-Angle X-ray Scattering and Differential Scanning Calorimetry
(2009-06-23)
Su, C. H.
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Jeng, U.
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Chen, S. H.
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Cheng, C. -Y.
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Lee, J. -J.
By means of in situ small/wide-angle X-ray scattering (SAXS/WAXS) and differential scanning calorimetry (DSC), we examined evolutions of lamellar crystal thickness for alpha and beta crystals, respectively, in bulk-crystallized syndiotactic polystyrene (sPS) during the partial melting-reorganization process upon progressive heating up to 290 degrees C. For the SAXS data analysis, the Kratky-Porod approximation proves to be particularly helpful in extracting the crystal thickness when approaching final melting where crystalline lamellae (near equilibration with the melt) exist in low concentrations as dispersed entities instead of in arrays. On the basis of the crystal thicknesses at elevated temperatures under solid-melt equilibration, we constructed melting lines of the two separate forms in the Gibbs-Thomson phase plane. The extrapolated (to infinite lamellar thickness) equilibrium melting temperature T(m,alpha)* approximate to 294 degrees C of the a form is moderately lower than T(m,beta)* approximate to 306 degrees C of the beta form. The two melting lines intercept at a crossover temperature T(Q) approximate to 284 degrees C and crystal thickness l(Q) approximate to 9.6 nm, where the relative thermal stability of the two phases inverses. For crystals thicker than l(Q) (practically hard to reach for bulk crystallization under ambient pressure), the beta form is the stable phase; for crystals thinner than I(Q) (the commonly accessible case), the a form is circumstantially more stable. With crystallinity-corrected values of the heat of fusion Delta H(f,alpha) approximate to 82 MJ m(-3) and Delta H(f,beta) approximate to 146 MJ m(-3) obtained from a combination of DSC and WAXS results, we determined from the slope (= 2 sigma(e)/Delta H(f)) of the melting line that basal surface energy sigma(e,alpha) approximate to 8.2 mJ m(-2) and sigma(e,beta) approximate to 26.8 mJ m(-2) which are considerably lower than those expected for tight folds, indicative of nonadjacently re-entered or loosely looped folds. The combination of lower T(m)*, Delta H(f), Delta S(f), and sigma(e) values renders the a phase highly competitive in the rate of nucleation at low temperatures but much less so at high temperatures as compared to the beta phase. The higher sigma(e,beta) value is also consistent with the observation that the beta phase is more responsive to externally added heterogeneous nucleation agents.