Browsing by Issue Date, starting with "2009-07-16"

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SILICON CONTROLLED RECTIFIER
(2009-07-16)
Ker, Ming-Dou
;
Lin, Chun-Yu
;
Wang, Chang-Tzu
A silicon controlled rectifier structure of polygonal layouts is provided. The polygonal first conductive type doped region is located in the middle of the polygonal second conductive type well. The first conductive type well shaped as a polygonal ring surrounds the second conductive type well and the second conductive type doped region is located within the first conductive type well and shaped as a polygonal ring concentric to the first conductive type well.
Automotive virtual surround audio system
(2009-07-16)
Bai, Ming-Sian
;
Lee, Chih-Chung
;
Chen, Hui-Wen
An automotive virtual surround audio system is implemented in an automobile to receive left- and right-channel audio sources. A synthesizer receives the left- and right-channel audio sources to extend the sources into temporary rear-left and rear-right audio sources. A weighting device receives the left- and right-channel audio sources to perform a weighting operation and produce temporary front-left and front-right audio sources. A first filter receives the temporary front-left and front-right audio sources to perform a filtering operation and produce virtual front-left and front-right audio sources. A second filter receives the temporary rear-left and rear-right audio sources to perform a filtering operation and produce virtual rear-left and rear-right audio sources. Thus, the virtual audio image position is reproduced.
螢光材料與發光裝置
(2009-07-16)
陳登銘
;
戴筱萍
本發明提供一系列螢光材料,其化學通式如下:Am(Ba1-xEux^2+)nPyOz;其中A係選自由Li、Na及K所組成之族群至少其中之一;且0<m<10;0<n<10;0<y<10;m+n+y=3/4 z;0.001<x<0.8。
製造奈米結構材料的方法
(2009-07-16)
陳智
;
楊慶榮
;
王舜民
;
謝嘉民
一種製造奈米結構材料的方法,應用於形成一維奈米材料。上述方法包括下列步驟:形成一金屬層於一基底上並對金屬層進行陽極化處理步驟以形成一具有複數個奈米孔洞的金屬化物模板,之後再沉積一源材料於奈米孔洞中及金屬化物模板上。最後依序移除金屬化物模板上之源材料及金屬化物模板以形成一維奈米材料。上述步驟中利用了陽極氧化鋁作為模板與原子層化學氣相沉積法沉積源材料,可縮短製造時間並控制材料的品質。
汽車虛擬環繞音響系統
(2009-07-16)
白明憲
;
李志中
;
陳暉文
本發明係有關於一種汽車虛擬環繞音響系統,其設置於汽車上以接收一二聲道音源。一空間合成器接收二聲道音源之左聲道音源及右聲道音源,並擴展為一暫時後左聲道音源及一暫時後右聲道音源。一加權裝置接收二聲道音源之左聲道及右聲道音源,經加權運算產生一暫時前左聲道音源及一暫時前右聲道音源。一第一濾波器接收暫時前左聲道及暫時前右聲道音源,經濾波而產生虛擬前左聲道音源及虛擬前右聲道音源。一第二濾波器接收暫時後左聲道音源及暫時後右聲道音源,經濾波而產生一虛擬後左聲道音源及一虛擬後右聲道音源。藉此,俾重現虛擬音像位置。
VERTICAL ORGANIC TRANSISTOR
(2009-07-16)
Meng, Hsin-Fei
;
Horng, Sheng-Fu
;
Chao, Yu-Chiang
A vertical organic transistor and a method for fabricating the same are provided, wherein an emitter, a grid with openings and a collector are sequentially arranged above a substrate. Two organic semiconductor layers are interposed respectively between the emitter and the grid with openings and between the grid with openings and the collector. The channel length is simply decided by the thickness of the organic semiconductor layers. The collector current depends on the space-charge-limited current contributed by the potential difference between the emitter and the openings of the grid. And the grid voltage can thus effectively control the collector current. Further, the fabrication process of the vertical organic transistor of the present invention is simple and exempt from using the photolithographic process.
產生揚聲器共振式音箱參數之系統
(2009-07-16)
白明憲
;
張寰生
;
陳榮亮
一種產生揚聲器共振式音箱參數之系統,該系統係藉由定義一低頻延伸頻率、一質量比及一出音孔的半徑,並固定一機械系統的共振頻率及一機械系統質量,取得一頻率比、一導音管長度及一腔體容積等參數,以製作該揚聲器共振式音箱。
Dye-less color filter fabricated by roll-to-roll imprinting for liquid crystal display applications
(2009-07-20)
Lin, Hui-Hsiung
;
Lee, Chi-Hung
;
Lu, Mao-Hong
;
光電工程學系
;
Department of Photonics
A diffractive grating is promising for color separation to effectively replace conventional absorptive dye color filter in liquid crystal displays. In this paper, we demonstrated a color separation module consisting of an aspheric-lenticular lens array and a blazed grating to substitute for the dye color filter. Each component was designed to match the recent fabrication ability of our roll-to-roll imprinting. The measurement results of a prototype module showed a gain factor of transmission efficiency three times more than that of conventional color filters. (C) 2009 Optical Society of America
Synthesis and Phase Width of Quaternary Selenides Pb(4)In(x)M(6-x)Se(13) (M = Bi, x=2.1-2.8; Sb, x=2)
(2009-07-20)
Wang, Ming-Fang
;
Huang, Wen-Hen
;
Lee, Chi-Shen
;
應用化學系
;
Department of Applied Chemistry
Quaternary selenides of Pb(4)In(x)M(6-x)Se(13) (M = Bi, x = 2.1-2.8; Sb, x = 2) were synthesized by solid-state methods, and their structures were determined from X-ray diffraction of single crystals. These compounds are isostructural with Pb(4)In(2)Bi(4)S(13) and crystallize in orthorhombic space group Pbam (No. 55) with Z = 4; the structure features a three-dimensional framework consisting of Z-shaped ribbon units and corner-sharing infinite one-dimensional [InSe(4)](proportional to) chains running parallel to the c-axis, which are connected by Pb atoms to form a three-dimensional structure. Calculations of the band structure and measurements of Seebeck coefficient, electrical conductivity, and diffuse reflectance spectra confirm that these compounds are semiconductors with a narrow band gap. All compounds show semiconducting properties; the Seebeck coefficient of Pb(4)In(2.5)Bi(3.5)Se(13) is -180 mu V/K at 295 K.
交大e-News第052期
(2009-07-20)
Secretariat
;
國立交通大學秘書室
Synthesis and Phase Width of Quaternary Selenides Pb4InxM6-xSe13 (M = Bi, x=2.1-2.8; Sb, x=2)
(2009-07-20)
Wang, Ming-Fang
;
Huang, Wen-Hen
;
Lee, Chi-Shen
;
應用化學系
;
Department of Applied Chemistry
Quaternary selenides of Pb4InxM6-xSe13 (M = Bi, x = 2.1-2.8; Sb, x = 2) were synthesized by solid-state methods, and their structures were determined from X-ray diffraction of single crystals. These compounds are isostructural with Pb4In2Bi4S13 and crystallize in orthorhombic space group Pbam (No. 55) with Z = 4; the structure features a three-dimensional framework consisting of Z-shaped ribbon units and corner-sharing infinite one-dimensional [InSe4](proportional to) chains running parallel to the c-axis, which are connected by Pb atoms to form a three-dimensional structure. Calculations of the band structure and measurements of Seebeck coefficient, electrical conductivity, and diffuse reflectance spectra confirm that these compounds are semiconductors with a narrow band gap. All compounds show semiconducting properties; the Seebeck coefficient of Pb4In2.5Bi3.5Se13 is -180 mu V/K at 295 K.
Study of electrical characterization of 2-methyl-9, 10-di(2-naphthyl)anthracene doped with tungsten oxide as hole-transport layer
(2009-07-20)
Hsieh, Ming-Ta
;
Ho, Meng-Huan
;
Lin, Kuan-Heng
;
Chen, Jenn-Fang
;
Chen, Teng-Ming
An efficient p-doped transport layer composed of an ambipolar material, 2-methyl-9,10-di(2-naphthyl)anthracene (MADN) and tungsten oxide (WO(3)) has been developed. The admittance spectroscopy studies show that the incorporation of WO(3) into MADN can greatly improve the hole injection and the conductivity of the device. Moreover, when this p-doped layer was incorporated in the tris(8-quinolinolato)aluminum-based device, it achieved a current efficiency of 4.0 cd/A and a power efficiency of 2.4 lm/W at 20 mA/cm(2). This work paves the way to simplify the fabrication of future p-i-n organic light-emitting devices with a single common ambipolar MADN material.
Ultracompact backlight-reversed concentration optics
(2009-07-20)
Chien, Ming-Chin
;
Tung, Yu Lung
;
Tien, Chung-Hao
;
光電工程學系
;
顯示科技研究所
We demonstrate a concentration scheme based on a reversed tracing concept utilizing a conventional sidelit backlighting configuration. The optical arrangement consists of a groove sheet and a wedge plate without any coating or surface treatment. The proposed layout simultaneously exhibits two main features: coupling the collimated solar radiance into a wedge plate and guiding the flux to the exit plane of the wedge plate for use in direct daylight. The measurement revealed an optical efficiency of 52% in conjunction with an inverse aspect ratio of 9.51. In addition to the two-dimensional sidelit scheme, the proposed structure can also be rotationally convolved and extended to a three-dimensional solar concentrator with a high concentration ratio, which will certainly have an impact on solar energy and other optical functions because of its simplicity and versatility (C) 2009 Optical Society of America
Results from parallel observations of superconducting and absolute gravimeters and GPS at the Hsinchu station of Global Geodynamics Project, Taiwan
(2009-07-21)
Hwang, Cheinway
;
Kao, Ricky
;
Cheng, Ching-Chung
;
Huang, Jiu-Fu
;
Lee, Chiung-Wu
The Hsinchu (HS) superconducting gravimeter (SG, serial T48) station is a newly established site in the Global Geodynamics Project (GGP). Simultaneous observations of T48, three FG5 absolute gravimeters, and GPS at four stations are studied. GPS shows few mm a(-1) of horizontal and vertical motions around HS. The calibration factor and drifting rate of T48 are -75.96 +/- 0.07 mu Gal V(-1) and 0.2 +/- 0.7 mu Gal a(-1) (1 mu Gal = 10(-8) m s(-2)). Both the SG and absolute gravity records contain trends of about 2-3 mu Gal a(-1). The ocean tide gravity effects (OTGEs) were estimated from NAO. 99b, FES2004, and CSR4.0, and their amplitudes agree with the SG observations at the submicroGal level, but their phases differ from the observations up to 10 degrees. The Newtonian effect of ocean tide contributes 20% to the total OTGE at HS, and it is larger at islands in the Taiwan Strait. The inelastic body tide model of Dehant et al. (1999) is more consistent with the SG observations than the elastic model. Modeled gravity-atmosphere admittances based on an exponential distribution of air mass explain well the observed admittances. The average gravity-atmosphere admittance during typhoons is 30% larger than that in a nontyphoon time. A list of coseismic gravity changes from T48 caused by earthquakes over 2006-2007 is given for potential studies of fault parameters. The modeled effects of atmospheric pressure, groundwater, soil moisture, and polar motion explain the FG5 observed gravity trend to 1.1 mu Gal a(-1). Seasonally, the groundwater-induced gravity change contributes the most to the SG residual gravity, but its phase leads the latter by 63 days.
The structural and optical properties of InN nanodots grown with various V/III ratios by metal-organic chemical vapor deposition
(2009-07-22)
Fu, S. F.
;
Wang, S. M.
;
Lee, L.
;
Chen, C. Y.
;
Tsai, W. C.
Self-assembled InN nanodots have been prepared at 650 degrees C with various V/III ratios from 500 to 30 000 by metal-organic chemical vapor deposition (MOCVD). It is found that the dot density and morphological size as well as the optical properties all display drastic changes at V/III = 12000. Generally, denser and smaller InN nanodots with higher emission energy and narrower linewidth were obtained when growth was conducted at V/III ratios slightly lower than 12 000 as compared to those at higher V/III ratios. The physical properties of our MOCVD-grown InN nanodots are sensitive to the surface structure and the morphology is very similar to molecular beam epitaxially grown GaN and InN films, which may be used as a guide to optimize the InN growth.
Resonant X-Ray Scattering and Absorption for the Global and Local Structures of Cu-modified Metallothioneins in Solution
(2009-07-22)
Li, Meiyi
;
Huang, Yu-Shan
;
Jeng, U-Ser
;
Hsu, I-Jui
;
Wu, YewChung Sermon
With Cd and Zn metal ions removed from the native rabbit-liver metallothionein upon unfolding, Cu-modified metallothioneins (Cu-MTs) were obtained during refolding in solutions containing Cu(I) or Cu(II) ions. X-ray absorption near-edge spectroscopic results confirm the respectively assigned oxidation states of the copper ions in Cu(I)-MT and Cu(II)-MT. Global and local structures of the Cu-MTs were subsequently characterized by anomalous small-angle x-ray scattering (ASAXS) and extended x-ray absorption fine structure. Energy-dependent ASAXS results indicate that the morphology of Cu(II)-MT resembles that of the native MT, whereas Cu(I)-MT forms oligomers with a higher copper content. Both dummy-residue simulation and model-shape fitting of the ASAXS data reveal consistently rodlike morphology for Cu(II)-MT. Clearly identified Cu-S, Cu-O, and Cu-Cu contributions in the extended x-ray absorption fine structure analysis indicate that both Cu(I) and Cu(II) ions are bonded with O and S atoms of nearby amino acids in a four-coordination environment, forming metal clusters smaller than metal thiolate clusters in the native MT. It is demonstrated that a combination of resonant x-ray scattering and x-ray absorption can be particularly useful in revealing complementary global and local structures of metalloproteins due to the atom specific characteristics of the two techniques.
TRANSIENT DETECTION CIRCUIT FOR ESD PROTECTION
(2009-07-23)
Ker, Ming-Dou
;
Yen, Cheng-Cheng
;
Liao, Chi-Sheng
;
Chen, Tung-Yang
A transient detection circuit including a detecting unit, a setting unit, and a memory unit. The transient detection circuit provides an information signal to an external instrument when an electrostatic discharge (ESD) event occurs. The detecting unit is coupled between a first power line and a second power line for detecting the ESD event. The setting unit sets a level of a first node according to the detection result. The memory unit controls the information signal according to the level of the first node. The information signal is at a first level when the ESD event occurs in the first power line.
Intercrossed Sheet-Like Ga-Doped ZnS Nanostructures with Superb Photocatalytic Actvitiy and Photoresponse
(2009-07-23)
Lu, Ming-Yen
;
Lu, Ming-Pei
;
Chung, Yao-An
;
Chen, Ming-Jer
;
Wang, Zhong Lin
Intercrossed ZnS nanostructures doped with Ga (ZnS:Ga nanowalls) have been synthesized in high yield from mixed powders in a vacuum furnace. ZnS:Ga nanowalls were grown vertically on the substrate with the size in the range of several micrometers and the thickness down to similar to 15 nm and have very rough edges. Due to the high surface area and distinctive morphology of ZnS:Ga nanowalls, the photocatalytic activity and the photoresponse show superior properties compared to ZnS:Ga films. The increased conductivity of metal-semiconductor-metal (Ag-ZnS:Ga nanowalls-Ag) Schottky photodetectors under light illumination is attributed to the photogenerated electron-hole pairs, the desorption of oxygen molecules on the ZnS:Ga surface, and the lowering of the Schottky barrier height. The results indicate that ZnS:Ga nanowalls are promising candidate materials for photocatalysts and applicable as photodetectors, optical switches, and sensors in the visible light region.
Developments of Raman spectroscopy in the past 40 years: from a molecule to a living cell
(2009-07-25)
Hamaguchi, Hiro-o
;
應用化學系
;
應用化學系分子科學碩博班
;
Department of Applied Chemistry
;
Institute of Molecular science
This article is based on the opening lecture 'Raman spectroscopy at Tokyo: past 40 years and future' delivered at the symposium entitled '80 years of Raman effect: reflections and the future' held at Bangalore from 8 to 10 December 2008. It reviews four research subjects, including (1) anomalous depolarization ratios in resonance Raman scattering, (2) one- way photoisomerization of retinal by nanosecond time-resolved Raman spectroscopy, (3) dynamic polarization model of photoisomerization of stilbene by picosecond time-resolved Raman spectroscopy, and (4) discovery of the 'Raman spectroscopic signature of life' by timeand space-resolved Raman spectroscopy. The future possibilities of Raman spectroscopy are also briefly addressed.
Preparation of phosphated Zr-doped TiO(2) exhibiting high photocatalytic activity through calcination of ligand-capped nanocrystals
(2009-07-25)
Chang, Sue-min
;
Hou, Chieh-yao
;
Lo, Pin-han
;
Chang, Chen-tuan
;
環境工程研究所
We incorporated phosphate and pyrophosphate species into the surface lattice of Zr-doped TiO(2) via calcination (>550 degrees C) of triocylphosphine oxide (TOPO)-capped nanocrystals that had been prepared using a non-hydrolytic sol-gel method. The phosphated Zr-doped TiO(2) calcined at 550-750 degrees C exhibited 2.88-5.28-fold higher photocatalytic activities for decomposition of bisphenol A (BPA) than did P25. Moreover, the sample prepared through calcination at 950 degrees C performed an extraordinary activity which was 40.3 times higher than that of P25. The high surface reactivities were resulted from co-doing of TiO(2) surface with Zr(4+) and phosphate/pyrophosphate species. Calcination enhanced the reactivity at elevated temperatures because it changed the microstructures and surface properties of phosphated Zr-doped TiO(2). The average crystallite size increased dramatically from 10.2-10.8 to 16.1 nm when the temperature increased from 750 to 950 degrees C. This change was associated with the formation of pyrophosphate species through condensation of the concentrated phosphate species. Dehydration resulted in substantial amounts of oxygen vacancies (O(M)/M(S) = 1.38) and Ti(3+) ions in the surface layers of the phosphated Zr-doped TiO(2) calcined at 950 degrees C. The dehydrated TiO(2) displayed high affinity toward BPA with a maximum adsorption capacity of 5.35 mg/g. The appearance of signals for Ti(4+)-O(2)(-) in the EPR spectrum of the modified TiO(2) in the dark indicated its high capability for the chemisorption of O(2). In addition, the remarkable decrease in the intensities of trapped electrons in the sample under an O(2) atmosphere revealed that efficient charge transfer occurred from the trapped sites to the electron scavenger. Thus, the phosphated Zr-doped TiO(2) calcined at high temperatures exhibit improved adsorbability toward reactants and enhanced interfacial charge transfer, resulting in outstanding photocatalytic activity. (C) 2009 Elsevier B.V. All rights reserved.