Browsing by Issue Date, starting with "2010-03-03"

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Adaptive Kernel Principal Component Analysis (KPCA) for Monitoring Small Disturbances of Nonlinear Processes
(2010-03-03)
Cheng, Chun-Yuan
;
Hsu, Chun-Chin
;
Chen, Mu-Chen
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運輸與物流管理系註：原交通所+運管所
;
Department of Transportation and Logistics Management
The Tennessee Eastman (TE) process, created by Eastman Chemical Company, is a complex nonlinear process. Many, previous studies focus on the detectability of monitoring a multivariate process by using TE process as an example. Principal component analysis (PCA) is a widely used dimension-reduction tool for monitoring multivariate linear process. Recently, the kernel principal component analysis (KPCA) has emerged as all effective method to tackling the problem of nonlinear data. Nevertheless, the conventional KPCA used the sum of squares of latest observations is the monitoring statistics and hence failed to detect small disturbance of the process. To enhance the delectability of the KPCA-based monitoring method, an adaptive KPCA-based monitoring statistic is proposed in this paper. The basic idea of the proposed method is first adopting the multivariate exponentially moving average to predict the process mean shifts and then combining the estimated mean shifts with the extracted components by KPCA to construct the adaptive monitoring statistic. The efficiency of the proposed monitoring scheme is implemented in a simulated nonlinear system and in the TE process. The experimental results indicate that the proposed method outperforms the traditional PCA and KPCA monitoring schemes.
STRUCTURE OF POLARIZING TERAHERTZ WAVE DEVICE
(2010-03-04)
CHAO, Ru-Pin
;
Pan, Ci-Ling
;
Hsieh, Cho-Fan
;
Lai, Yu-Chien
The Terahertz Polarizer structure of the present invention comprises of: A pair of parallel quartz layers for forming a rectangular cube with internal space, then a birefringent liquid crystal is placed in the internal space and sealed, and a pair of permanent magnets with reverse polarities are placed at both sides of the pair of fused silica layers.
OPTOELECTRONIC MEMORY DEVICE AND METHOD FOR MANUFACTURING AND MEASURING THE SAME
(2010-03-04)
WEI, Kung-Hwa
;
SHEU, Jeng-Tzong
;
CHEN, Chen-Chia
;
CHIU, Mao-Yuan
The present invention provides an optoelectronic memory device, the method for manufacturing and evaluating the same. The optoelectronic memory device according to the present invention includes a substrate, an insulation layer, an active layer, source electrode and drain electrode. The substrate includes a gate, and the insulation layer is formed on the substrate. The active layer is formed on the insulation layer, and more particularly, the active layer is formed of a composite material comprising conjugated conductive polymers and quantum dots. Moreover, both of the source and the drain are formed on the insulation layer, and electrically connected to the active layer.
Etching of GaN by microwave plasma of hydrogen
(2010-03-04)
Tiwari, Rajanish N.
;
Chang, Li
;
材料科學與工程學系
;
Department of Materials Science and Engineering
An etching process for GaN on a sapphire substrate using a microwave plasma of hydrogen has been studied. Scanning electron microscopy observations of the surface morphology show that the etching of GaN with H(2) plasma can lead to the formation of etch pits in hexagonal shape. The average size of hexagonal pits is greater than 200 nm. The effects of processing pressure and etching time are demonstrated.
Wide duty cycle range synchronous mirror delay designs
(2010-03-04)
Sheng, D.
;
Chung, C. -C.
;
Lee, C. -Y.
;
電機工程學系
;
Department of Electrical and Computer Engineering
A wide duty cycle range and small static phase error synchronous mirror delay (SMD) for system-on-chip (SoC) applications is presented. The conventional SMD accepts only the pulsed clock signal and has large static phase error. The proposed SMD uses the edge-trigger mirror delay cell to enlarge the input duty cycle range and the blocking edge-trigger scheme to ensure functionality and performance. Moreover, phase error can be reduced by the proposed delay-matching structure and fine-tuning delay line with a high-resolution delay cell. Simulation results of SMD show that the input clock duty cycle range is from 20 to 80% and the worst static phase error under different process, voltage, and temperature conditions can achieve 18 ps at 400 MHz.
Surface modification of nano-porous anodic alumina membranes and its use in electroosmotic flow
(2010-03-04)
Chen, Yu-Feng
;
Hu, Yi-Hsin
;
Chou, Yen-I
;
Lai, Shih-Ming
;
Wang, Chi-Chuan
This study examines the surface-modification effects of porous anodic alumina membranes (PAAMs) on the performance of electroosmotic (EO) pumping. The modifications include using H(2)O(2)-pretreated, and followed by 3-aminopropyltriethoxysilane (APS) or 3-mercaptopropyl trimethoxysilane (MPTS) sol-gel solutions to functionalize the surface of PAAM for achieving higher surface charge density. The surface-modified membranes are analyzed by average pore size, contact angle, and FTIR measurements. The results show that APS and MPTS are successfully coated on the surface of PAAMs. The characteristics (e.g., total current, maximum pressure, and normalized flow rate) of the EO pumps with these surfacemodified PAAMs are investigated. The comparison results of total current at zero time confirmed that the surface charge density of the surface-modified PAAM has been increased. Consequently, the maximum normalized flow rate of EO pump with the APS- and MPTS-coated PAAM are higher than that with the bare PAAM in DI water but without buffer control methods. The convection current of EO flow is also investigated, and the results show that its contribution to total current is around 11% and thus cannot be ignored for EO flow with nano-size channels. (C) 2009 Elsevier B.V. All rights reserved.
交大e-News第066期
(2010-03-05)
Secretariat
;
國立交通大學秘書室
In Vivo Resonance Raman Detection of Ferrous Cytochrome c from Mitochondria of Single Living Yeast Cells
(2010-03-05)
Onogi, Chikao
;
Hamaguchi, Hiro-o
;
應用化學系
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應用化學系分子科學碩博班
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Department of Applied Chemistry
Raman spectra of mitochondria in living budding yeast cells (zygote of Saccharonlyces cerevisiae and Saccharomyces bayanus) have been recorded with 532 nm excitation. Strong and sharp Raman bands are observed at 1584, 1315, 1129, 749, and 601 cm(-1), in addition to known phospholipid bands. These Raman bands are not observed in the corresponding Raman spectrum of mitochondria obtained with 632.8 nm excitation. Their peak positions and relative intensities agree excellently with the reported resonance-enhanced Raman bands of ferrous cylochrome c, which has a Q-band absorption at 520 nm. We have thus succeeded in detecting ferrous cytochrome c, one of the key intermediates in the electron-transport chain in mitochondria, in vivo without any pretreatment. In vivo resonance Raman detection of ferrous cytochrome c opens up new possibilities for real-time and quantitative tracing of respiration dynamics in mitochondria in a single living cell.
Deep Red Emission of Ca(19)Ce(PO(4))(14):Mn(2+) Phosphor for Fluorescent Lamp and PDP Applications
(2010-03-05)
Kuo, Te-Wen
;
Chung, Hsiu-Pei
;
Chen, Teng-Ming
;
應用化學系
;
Department of Applied Chemistry
The unprecedented deep red-emitting phosphor, Ca(19)Ce(PO(4))(14):Mn(2+), has been fabricated by a convenient solid-state method. A strong red emission centered at 637 nm corresponding to the 4T1(4G) -> 6A1(6S) transition of Mn(2+) is observed under 130-300 nm excitation. The chromaticity coordinates of optimized phosphor were found to be (0.69, 0.29). In addition, we have also made an attempt to observe strong red emission displayed by this phosphor for use as coating material on compact fluorescent lamps (CFLs). It is a promising candidate for application in CFLs as a red-emitting color converter.
Simulation of characteristic variation in 16 nm gate FinFET devices due to intrinsic parameter fluctuations
(2010-03-05)
Li, Yiming
;
Hwang, Chih-Hong
;
Han, Ming-Hung
;
傳播研究所
;
電機工程學系
High-kappa/metal-gate and vertical channel transistors are well-known solutions to continue the device scaling. This work extensively explores the physics and mechanism of the intrinsic parameter fluctuations in nanoscale fin-type field-effect transistors by using an experimentally validated three-dimensional quantum-corrected device simulation. The dominance fluctuation sources in threshold voltage, gate capacitance and cutoff frequency have been found. The emerging fluctuation source, workfunction fluctuation, shows significant impacts on DC characteristics; however, its impact is reduced in AC characteristics due to the screening effect of the inversion layer. Additionally, the channel discrete dopant may enhance the electric field and therefore make the averaged cutoff frequency of fluctuated devices larger than the nominal value of cutoff frequency.
Electronic and Vibrational Coherence Dynamics in a Cyanine Dye Studied Using a Few-Cycle Pulsed Laser
(2010-03-05)
Wang, Ying
;
Kobayashi, Takayoshi
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電子物理學系
;
Department of Electrophysics
We report the relaxation times of electronic and vibrational coherence in the cyanine dye 1,1',3,3,3',3'-hexamethyl-4,4',5,5'-dibenzo-2,2'-indotricarbocyanine, measured using a 7.1 fs pulsed laser. The vibrational phase relaxation times are found to be between 380 and 680 fs in the ground and lowest excited singlet states. The vibrational dephasing times of the 294, 446, and 736 cm(-1) modes are relatively long among the six modes associated with excited-state wave packets. The slower relaxations are explained in terms of a coupled triplet of vibrational modes, which preserves coherence by forming a tightly bound group to satisfy the condition of circa conservation of vibrational energy. Using data from the negative-time range (i.e., when the probe pulse precedes the pump pulse), the electronic phase relaxation time is found to be 31 +/- 1 fs. The dynamic vibrational mode in the excited state (1171 cm(-1)), detected in the positive-time range, is also studied from the negative-time traces under the same experimental conditions.
Deep Red Emission of Ca19Ce(PO4)(14):Mn2+ Phosphor for Fluorescent Lamp and PDP Applications
(2010-03-05)
Kuo, Te-Wen
;
Chung, Hsiu-Pei
;
Chen, Teng-Ming
;
應用化學系
;
Department of Applied Chemistry
The unprecedented deep red-emitting phosphor, Ca19Ce(PO4)(14):Mn2+, has been fabricated by a convenient solid-state method. A strong red emission centered at 637 nm corresponding to the 4T1(4G) -> 6A1(6S) transition of Mn2+ is observed under 130-300 nm excitation. The chromaticity coordinates of optimized phosphor were found to be (0.69, 0.29). In addition, we have also made an attempt to observe strong red emission displayed by this phosphor for use as coating material on compact fluorescent lamps (CFLs). It is a promising candidate for application in CFLs as a red-emitting color converter.
A New Poly(amide urethane) Solid State Electrolyte Containing Supramolecular Structure
(2010-03-09)
Yen, Ying-Chieh
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Cheng, Chih-Chia
;
Kuo, Shiao-Wei
;
Chang, Feng-Chih
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應用化學系
Transient to digital converters
(2010-03-09)
Ker
;
Ming-Dou
;
Yen
;
Cheng-Cheng
;
Liao
A digital converter including a first adjustment unit and a first transient detection unit. The first adjustment unit adjusts amplitude of an electrostatic discharge (ESD) pulse to generate a first adjustment signal when an ESD event occurs in a first power line and a second power line is at a complementary level. The first transient detection unit generates a first digital code according to the first adjustment signal.
Neutral Dissociation of Superexcited Oxygen Molecules in Intense Laser Fields
(2010-03-11)
Song, Di
;
Azarm, Ali
;
Kamali, Yousef
;
Liu, Kai
;
Xia, Andong
Superexcited States (SESs) of oxygen molecules and their neutral dissociation processes have been studied both experimentally and theoretically using intense femtosecond laser. We find that at the laser Intensity of similar to 2 x 10(14) W/cm(2), ultrashort laser pulse causes neutral dissociation of oxygen molecule by way of SESs. The dissociation products are the excited neutral oxygen atoms, which are observed that fluorescence,Spectroscopy. Laser power dependence of the fluorescence intensity shows that each molecule effectively absorbs ill average of tell laser photons. The total energy absorbed is sufficient to stimulate the molecule to many of the SESs The effect is equivalent to single photon excitation in the extreme-ultraviolet (XUV) region by synchrotron radiation (SR). Morse potential energy curves (PECs). are constructed for the SESs of O(2) molecules. In light of the PECs, predissociation mechanism is proposed for the neutral dissociation. Quasi-classical trajectroy (QCT) calculations show that the predissociation time is as short as 100 fs, which is consistent with our experimental measurement using ultrafast pump-probe technique
內儲存無關項控制之階層式搜尋線
(2010-03-11)
張書瑋
;
張銘宏
;
黃威
;
黃柏蒼
本發明提供一種內儲存無關項控制之階層式搜尋線，其係在內容可定址記憶體中區分出複數區塊，每一區塊包含複數區域搜尋線、一總體搜尋線、一緩衝器及一記憶單元，將資料依照前置內容的長短依序儲存於區塊中，其中具有最長前置內容者儲存於最底部，並以其內無關項之狀態值做為緩衝器之控制訊號，控制總體搜尋線尚之資料是否被傳遞到區域搜尋線，而區域搜尋線再將值傳送到記憶單元中。本發明無須複雜的控制電路及額外之儲存單元，且由於控制訊號係直接取自於無關項之狀態值，故可有效降低搜尋線之功率消耗而不增加搜尋延遲時間。
PHPIT and fabrication thereof
(2010-03-11)
Wei, Kung-Hwa
;
Chang, Yao-Te
The present invention provides PHPIT and fabrication thereof. PHPIT has a side-chain-tethered with hexylphenanthrenyl-imidazole polythiophene. The visible light absorption of the PHPIT/PCBM blend is enhanced by the presence of the electron-withdrawing hexylphenanthrenyl-imidazole. The PHPIT/PCBM blend experienced more-balanced electron and hole mobilities and solvability.
低密度高強度高韌性合金材料
(2010-03-11)
劉增豐
;
李堅瑋
本發明係關於一種低密度、高強度、高韌性之合金材料及其製法。該合金材料其主要包含15~33重量百分比之錳、6~10重量百分比之鋁、0.6~1.2重量百分比之碳、0.1~1.0重量百分比之矽及其餘比例以鐵為基材之合金材料，其具有6.6~6.9 g/cm3的密度、25~70%的延伸率或100~190ksi的抗拉強度等極佳的性質，故使得該合金材料可達到高強度、低密度、高延展性及優異表面性質之高爾夫桿頭設計目的，且該合金材料更可降低高爾夫桿頭在電鍍過程中所產生的孔蝕孔洞及缺陷的發生，因此大幅降低產品的不良率及成本。
RESOURCE ALLOCATION METHOD FOR MULTI-USERS MULTIPLE INPUT MULTIPLE OUTPUT ORTHOGONAL FREQUENCY DIVISION MULTIPLEXING SYSTEM AND APPARAUS THEREOF
(2010-03-11)
Wang, Li-Chun
;
Yeh, Chu-Jung
The present invention is direct to the resource allocation method for MU-MIMO-OFDM system and the apparatus thereof. The MU-MIMO-OFDM system has a plurality of users and a plurality of sub-channels. The sub-channels are assigned to the users according to the capacity ratio constraints and a scheduling rule, and then the power of the user is determined according to the limit power of the MU-MIMO-OFDM system. Wherein the values of power of the sub-channels assigned to the user are the same, the scheduling rule may be Max-Min or Max Sum-Rate rule, and the allocation of the sub-channels may be user-oriented or sub-channel oriented.
VOLTAGE-CONTROLLED OSCILLATOR
(2010-03-11)
Chen, Wei-Zen
;
Wu, Chung-Yu
;
Yu, Chi-Yao
A voltage-controlled oscillator comprises a variable inductor, a negative impedance circuit, an operating voltage source and a ground point. The variable inductor comprises a transformer and a transistor switch, the transformer comprising a primary side coil and a secondary side coil, the primary side coil comprising a first coil and a second coil, and the secondary side coil comprising a third coil and a fourth coil. The transistor switch is connected in parallel with the primary side coil to adjust an inductance value of the variable inductor based on a gate voltage. The negative impedance circuit is connected in parallel with the secondary side coil to compensate the power consumption of the voltage-controlled oscillator during oscillation. The operating voltage source is electrically connected between the third coil and the fourth coil, and the ground point is electrically connected between the first coil and the second coil.