Browsing by Issue Date, starting with "2010-06-01"

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Light-Output-Power Enhancement of GaN-Based Light-Emitting Diodes on an n-GaN Layer Using a SiO(2) Photonic Quasi-Crystal Overgrowth
(2010-06-01)
Huang, H. W.
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Huang, J. K.
;
Lee, K. Y.
;
Lin, C. F.
;
Kuo, H. C.
GaN-based LEDs with a SiO(2) oxide PQC pattern on an n-GaN layer by nanoimprint lithography are fabricated and investigated. At a driving current of 20 mA on a Transistor-Outline-can package, the light output power of LED III (d = 1.2 mu m) was enhanced by a factor of 1.20. The internal-quantum-efficiency result offers promising potential to enhance the light output power of commercial light-emitting devices with a SiO(2) oxide PQC structure on an n-GaN layer.
Analysis of Relationship between Inorganic Gases and Fine Particles in Cleanroom Environment
(2010-06-01)
Lin, I-Kai
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Bai, Hsunling
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Wu, Bi-Jun
;
環境工程研究所
;
Institute of Environmental Engineering
The concentrations and characteristics of major components in inorganic gases and fine particles were measured at the photo and etch cleanroom areas in a Taiwan semiconductor factory. The results showed that the major inorganic gases, as expressed in terms of volume concentration, were NH(3) and HF at 7-10 and 4-6 ppbv, respectively. The average PM(2.5) mass concentration were 17.52 and 18.23 mu g/m(3) at the photo and etch areas, respectively, with species of Na(+), NH(4)(+), Cl(-) and SO(4)(2-) had the highest concentrations in the PM(2.5) mass. And the inorganic species account for 56% and 62% of the particulate mass, respectively, at the photo and etch areas. Relatively stronger correlations were observed between NH(4)(+) and SO(4)(2-) with the correlation coefficient R(2) of 0.62 and 0.82, respectively, at the photo and etch areas; this indicates their common source was possibly from the gas to particle formation process. And NH(3) was found to co-exist with HF at the etch area due to their common source as process chemicals (NH(4)OH and HF) in the wet bench. In the predominant NH(3)-rich environment, ammonia is the basic neutralizing agent to form the ammonium aerosol in a cleanroom.
Does Litigation over the Infringement of Intellectual Property Rights Hinder Enterprise Innovation? An Empirical Analysis of the Taiwan IC Industry
(2010-06-01)
Tsai, Bi-Huei
;
管理科學系
;
Department of Management Science
This paper seeks to clarify the relationship between intellectual property right (IPR) infringement lawsuits and innovation by firms through an analysis of data from eighty-seven Taiwanese integrated circuit (IC) manufacturers in the period 2001-2006. The results show that the rapid growth in patent grant is positively related to the occurrence of patent infringement lawsuits, which implies that IPR infringement litigation strengthens firms' incentives to innovate. Patent holders adopt an "aggressive strategy" that makes use of the offensive function of patents to initiate lawsuits against alleged violators. The defendants then adopt a "regressive strategy" by building up "patent walls" to;vitae the charge and defend themselves. In addition, Taiwanese IC firms are more inclined to develop patents when they are defendants rather than when they are plaintiff's. This suggests that the defensive function of patents has a more profound impact than the offensive function for Taiwanese IC firms. These firms do not possess the core technology needed in IC-related manufacturing processes, and they have in the past applied other firms technology without obtaining legal licenses. In response to accusations of infringement, Taiwanese IC firms adopt a "regressive strategy," encouraging their employees to develop patents which they then use to refute the charge of IPR infringement. In addition, it is found that stock-based bonuses are a better incentive for encouraging employees to develop patents for their firms.
Higher-kappa titanium dioxide incorporating LaAlO(3) as dielectrics for MIM capacitors
(2010-06-01)
Cheng, C. H.
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Hsu, H. H.
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Chen, P. C.
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Liou, B. H.
;
Chin, Albert
In this work, we studied a TiO(2) mixed LaAlO(3) dielectric (TLAO) for metal-insulator-metal (MIM) capacitors. The resulting capacitor characteristics showed a high capacitance density of 23.2 fF/mu m(2) and a low leakage current of 7.5 x 10(-7) A/cm(2) at -1 V. Comparing to the control samples of TiLaO (ILO), TLAO dielectrics with Al(2)O(3) doping showed lower leakage current, smaller voltage nonlinearity and better time-dependent dielectric breakdown (TDDB) performance. Therefore, the TiO(2)-based dielectrics with the introduction of Al(2)O(3) might be favorable for the improved engineering of MIM capacitors. (C) 2010 Elsevier Ltd. All rights reserved.
Analytical Model for Wireless Communication Systems
(2010-06-01)
Juan, Hung-Hui
;
Huang, ChingYao
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交大名義發表
;
National Chiao Tung University
In this paper, a user capacity model, combining both the modulation and coding scheme (MCS) distribution model and resource allocation model, is developed to analyze the system performance of wireless communication systems. From the model, we can intuitively calculate the system capacity from MCS distribution. An example based on relay networks is used to quantify the benefit of deploying relay stations.
Investigation on NMOS-based power-rail ESD clamp circuits with gate-driven mechanism in a 0.13-mu m CMOS technology
(2010-06-01)
Chen, Shih-Hung
;
Ker, Ming-Dou
;
電機學院
;
College of Electrical and Computer Engineering
NMOS-based power-rail ESD clamp circuits with gate-driven mechanism have been widely used to obtain the desired ESD protection capability. All of them are usually based on a similar circuit scheme with multiple-stage inverters to drive the main ESD clamp NMOS transistor with large device dimension. In this work, the designs with 3-stage inverter and 1-stage inverter controlling circuits have been studied to verify the optimal circuit schemes in the NMOS-based power-rail ESD clamp circuits Besides, the circuit performances among the main ESD clamp NMOS transistors drawn in different layout styles cooperated with the controlling circuit of 3-stage inverters or 1-stage inverter are compared. Among the NMOS-based power-rail ESD clamp circuits, an abnormal latch-on event has been observed under the EFT test and fast power-on condition. The root cause of this latch-on failure mechanism has been clearly explained by the emission microscope with InGaAs FPA detector. (C) 2010 Elsevier Ltd All rights reserved.
死亡的新形象與除權的技術：阿爾及利亞殖民地的例子
(國立陽明交通大學出版社, 2010-06-01)
S. M. Barkat
;
金芙安
新自由主義經濟人的生命政治：中國富商傳的企業家主體敘述
(國立陽明交通大學出版社, 2010-06-01)
李紀舍
;
黃宗儀
本文以中國近年出版的富商傳記為例，說明這類暢銷書中最重要的命題便是教導大眾如何學習成功者成為「經濟人」。全文分為兩部分，第一部分耙梳傅柯人力資本與奧地利經濟學派行為學的論述來闡發新自由主義經濟人主體型塑的概念，繼而概述三類中國富商傳的主人翁樣貌與敘事脈絡。第二部分進一步探究富商傳與文化治理的關連。一方面以詮釋學來理解規劃企業家行動的敘述能力，並討論個人行動的社會協調性與社會制度之間的協商關係。另一方面將如此推演出的文化治理邏輯與所選取的三類富商傳並讀，從而釐清富商傳代表的意義。本文指出三類富商傳中，商幫書寫的主體是掩身於商幫集體中的求利個體，社會制度常化約為叢林法則的市場；溫州敘述的主體為追求微利不遺餘力的同鄉，社會制度化身為奇幻的全球市場環境。最後，《點評》系列中的成功人士是有自我敘述技巧的主體，常以所謂創造「價值」來描述與定位市場社會。我們將三類富商傳中再現的中國新自由主義經濟人主體稱為「範式企業主義」(paradigmatic entrepreneurialism)-富商本身對當代社會具有指導的權威性。這批率先致富的企業家，其地位在鄧小平的大歷史敘述中隱然已有經典化的地位。此共同預設的歷史大敘述裡，富商傳的重點在於敘述個人具體展現獨自在市場經濟中成功的不同路徑與經驗。從富商傳裡，我們發現他們演化出一些市場活動的行為準則，這些準則不僅建立了新的市場秩序，也逐漸讓其他人接受市場機制。這即是當代中國提供生命政治治理經濟社會的核心策略之一，得以使總體人口的生命活動進入市場交換，人人皆為「經濟人」。
SAR-Controlled Adaptive Off-Time Technique Without Sensing Resistor for Achieving High Efficiency and Accuracy LED Lighting System
(2010-06-01)
Liu, Chao-Hsuan
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Hsieh, Chun-Yu
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Hsieh, Yu-Chiao
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Tai, Ting-Jung
;
Chen, Ke-Horng
A successive approximation register (SAR) is utilized to control adaptive off-time in order to regulate accurate light-emitting diode (LED) current and improve efficiency of LED driver. The proposed SAR-controlled adaptive off-time technique without the external sensing resistor can sense the current flowing through LEDs during the turning on of the N-type power MOSFET, as well as provide adaptive off-time depending on the input voltage and the numbers of LED, to obtain an accurate LED current. Experimental results show the inductor current ripple is kept within +/- 15% of the DC current. As a result, line regulation is guaranteed in this proposed design.
Design of 2xVDD-Tolerant Power-Rail ESD Clamp Circuit With Consideration of Gate Leakage Current in 65-nm CMOS Technology
(2010-06-01)
Wang, Chang-Tzu
;
Ker, Ming-Dou
;
電子工程學系及電子研究所
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Department of Electronics Engineering and Institute of Electronics
A low-leakage 2xVDD-tolerant power-rail electrostatic discharge (ESD) clamp circuit composed of the silicon-controlled rectifier (SCR) device and new ESD detection circuit, realized with only thin-oxide 1xVDD devices, has been proposed with consideration of gate leakage current. By reducing the voltage across the gate oxides of the devices in the ESD detection circuit, the whole power-rail ESD clamp circuit can achieve an ultralow standby leakage current. The new proposed circuit has successfully been verified in a 1-V 65-nm CMOS process, which can achieve 6.5-kV human-body-model and 350-V machine-model ESD levels under ESD stresses, but only consumes a standby leakage current of 0.15 mu A at room temperature under normal circuit operating conditions with 1.8-V bias.
Investigation of Cell Stability and Write Ability of FinFET Subthreshold SRAM Using Analytical SNM Model
(2010-06-01)
Fan, Ming-Long
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Wu, Yu-Sheng
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Hu, Vita Pi-Ho
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Su, Pin
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Chuang, Ching-Te
In this paper, the static noise margin (SNM) of FinFET static random access memory (SRAM) cells operating in the subthreshold region was investigated using an analytical solution of 3-D Poisson's equation. An analytical SNM model for subthreshold FinFET SRAM was demonstrated and validated by 3-D technology computer-aided design (TCAD) mixed-mode simulations. When compared with bulk SRAM, the standard 6T FinFET cell showed larger nominal READ SNM (RSNM), better variability immunity, and lesser temperature sensitivity of cell stability. Furthermore, examination of the stabilities of several novel independently controlled gate FinFET SRAM cells by using the proposed SNM model showed significant nominal RSNM improvements in these novel cells. However, the write ability is found to be degraded, which thus becomes an important concern for certain configurations in the subthreshold region. The result obtained indicates that the READ/WRITE word line voltage control technique is more effective than transistor sizing in improving the stability and write ability of the FinFET subthreshold SRAM. Furthermore, the impacts of process-induced variations on cell stability were also assessed. When compared with RSNM, it was found that WRITE SNM is more susceptible to process variations. While 6T is not a viable candidate for subthreshold SRAM, and 8T/10T cells must be used in bulk CMOS, the present analysis established the potential of 6T FinFET cells for subthreshold SRAM applications.
Modification of Hydrophilic Property of Polypropylene Films by a Parallel-Plate Nitrogen-Based Dielectric Barrier Discharge Jet
(2010-06-01)
Chiang, Ming-Hung
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Liao, Kuo-Chi
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Lin, I-Min
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Lu, Chi-Chang
;
Huang, Hao-Yuan
Modification of the hydrophilic properties of polypropylene (PP) films has been investigated using the postdischarge region of a pulsed nitrogen-based dielectric barrier discharge under atmospheric-pressure conditions. Results show that, for the stationary PP films, the contact angle (CA) decreases dramatically from 103 degrees(untreated) to less than 30 degrees (treated) with a wide range of O(2)/N(2) ratios (<1%) and treating distances (<10 mm). In addition, the CA can still be maintained at similar to 40 degrees after 24 h of the aging test. For the nonstationary PP films, a highly hydrophilic surface can only be obtained when the PP film is placed near the jet exit with O(2)/N(2) ratios of 0.06%-0.2%. Additionally, the CA can only be maintained at similar to 80 degrees-90 degrees when the moving speed is similar to 1 cm/s after 24 h of the aging test. These observations are explained through measured optical emission spectra and ozone concentration data, in which the metastable nitrogen plays a key role in breaking the surface chemical bounds and the UV emission (200-300) participates in the process of converting the ozone into oxygen radical. Furthermore, X-ray photoelectron spectroscopy analysis showed that the O/C ratio increases dramatically for improved hydrophilic surface and the incorporation of functional groups containing oxygen (e. g., C-O and C = O) is critical in increasing the aging time after plasma treatment.
Nonlinear pricing of taxi services
(2010-06-01)
Yang, Hai
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Fung, C. S.
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Wong, K. I.
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Wong, S. C.
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運輸與物流管理系註：原交通所+運管所
This paper examines the effects of nonlinear fare structures in taxi markets using an extended taxi model with an explicit consideration of perceived profitability. The expected profit, defined as the profit per unit time (inclusive of both occupied and vacant taxi times), that a taxi driver expects to receive from picking up a customer in a particular zone or location, has great impact on the taxi driver's choice of location in the search for customers. The fare structure directly governs the profitability of taxi rides of different distances originating from different locations. With these explicit considerations, the extended model is intended to look into the market effects of adopting a nonlinear fare structure with declining incremental charges. The proposed nonlinear fare structure could help restore a level-playing field for taxi operators whose businesses have been affected by some taxi drivers who resort to practices such as offering fare discounts or accepting requests for discounted fares from passengers for long-haul trips. Analysis of sensitivity of social welfare and profit gain as well as taxi/customer wait/search times is conducted with respect to the parameters in the nonlinear fare structure for the Hong Kong taxi market, and Pareto-improving nonlinear fare amendments are identified that neither disadvantage any customer nor reduce the taxi operators' profits. (C) 2010 Elsevier Ltd. All rights reserved.
On the Origin of Hole Valence Band Injection on GIFBE in PD SOI n-MOSFETs
(2010-06-01)
Dai, Chih-Hao
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Chang, Ting-Chang
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Chu, Ann-Kuo
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Kuo, Yuan-Jui
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Chen, Shih-Ching
This letter systematically investigates the mechanism of gate-induced floating-body effect (GIFBE) in advanced partially depleted silicon-on-insulator metal-oxide-semiconductor field-effect transistors. Based on different operation conditions, we found that the hole current collected by the body terminal is strongly dependent on electrons in the inversion layer under a source/drain ground. This implies that GIFBE can be attributed to anode hole injection (AHI) rather than the widely accepted mechanism of electron valence band tunneling. Moreover, GIFBE was also analyzed as a function of temperature. The results provide further evidence that the accumulation of holes in the body results from the AHI-induced direct tunneling current from the gate.
Correlation of Microstructures and Conductivities of Ferroelectric Ceramics Using Complex Impedance Spectroscopy
(2010-06-01)
Chen, Pin-Yi
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Chou, Chen-Chia
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Tseng, Tseung-Yuen
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Chen, Haydn
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電子工程學系及電子研究所
The microstructures and conductivities of lead-free ceramics [Bi(0.5)(Na(1-x)K(x))(0.5)]TiO(3) with x = 0.18 (BNKT) and lead-based ceramics of x(0.94PbZn(1/3)Nb(2/3)O(3) + 0.06BaTiO(3)) + (1 - x)PbZr(y)Ti(1-y)O(3) with x = 0.5, y = 0.52 (PBZNZT) were investigated. Experimental results show that the activation energy of grain boundary conductivity is higher than that of grain conductivity for the BNKT system, indicating that the Bi(2)O(3) evaporation of grains induces an easy conduction path through grains. However, the activation energy of grain boundary conductivity is lower than that of grain conductivity for the PBZNZT system, which might be attributed to the charged particles in the amorphous phase at grain boundaries, participating in the conduction process. A conduction model of both grain and grain boundary conductivities was proposed, and the microstructural characteristics and AC impedance data of ferroelectric ceramics correlate fairly well, suggesting that impedance spectroscopy is an efficient characterization technique for the grain boundary engineering of ferroelectric ceramics. (C) 2010 The Japan Society of Applied Physics DOI: 10.1143/JJAP.49.061505
Incremental Digital Content Object Delivering in Distributed Systems
(2010-06-01)
Chen, Lung-Pin
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Wu, I-Chen
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Chu, William
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Hong, Jhen-You
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Ho, Meng-Yuan
Deploying and managing content objects efficiently is critical for building a scalable and transparent content delivery system. This paper investigates the advanced incremental deploying problem of which the objects are delivered in a successive manner. Recently, the researchers show that the minimum-cost content deployment can be obtained by reducing the problem to the well-known network flow problem. In this paper, the maximum flow algorithm for a single graph is extended to the incremental growing graph. Based on this extension, an efficient incremental content deployment algorithm is developed in this work.
An Integrated CMOS Front-End Receiver with a Frequency Tripler for V-Band Applications
(2010-06-01)
Chen, Po-Hung
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Chen, Min-Chiao
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Ko, Chun-Lin
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Wu, Chung-Yu
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電子工程學系及電子研究所
A direct-conversion receiver integrated with the CMOS subharmonic frequency tripler (SET) for V-band applications is designed, fabricated and measured using 0.13-mu m CMOS technology. The receiver consists of a low-noise amplifier, a down-conversion mixer, an output buffer, and an SET. A fully differential SFT is introduced to relax the requirements on the design of the frequency synthesizer. Thus, the operational frequency of the frequency synthesizer in the proposed receiver is only 20 GHz. The fabricated receiver has a maximum conversion gain of 19.4 dB, a minimum single-side band noise figure of 10.2 dB, the input-referred 1-dB compression point of -20 dBm and the input third order inter-modulation intercept point of -8.3 dB. It draws only 15.8 mA from a 1.2-V power supply with a total chip area of 0.794 mm x 0.794 mm. As a result, it is feasible to apply the proposed receiver in low-power wireless transceiver in the V-band applications.
實現輸出具有三倍頻正交信號之電路及方法
(2010-06-01)
郭建男
;
陳煥昇
一種實現輸出具有三倍頻正交信號之電路與方法，係應用於相位正交之二個輸入信號，其先利用倍頻器接收該二個輸入信號並分別產生二個倍頻信號，再藉由混波器將相對應的輸入信號以及該倍頻信號進行混波，俾分別產生具有頻率為輸入信號之頻率之三倍且相位正交之二個輸出信號，藉此，無需甚大之輸入信號振幅，即可提供功率消耗較低、頻寬範圍大且可實現為任意製程上之高頻信號源之三倍頻正交信號。
Solvent effect for ruthenium porphyrin
(2010-06-01)
Iwakura, Izumi
;
Yabushita, Atshi
;
Kobayashi, Takayoshi
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電子物理學系
;
Department of Electrophysics
Relaxation of electronic excited-state and vibrational dynamics in the electronic excited state in Ru(II)(TPP)(CO) [TPP=tetraphenylporphyrin] dissolved in N(2) bubbled benzene, O(2) bubbled benzene, N(2) bubbled chloroform and N(2) bubbled acetone were clarified using a sub-5fs laser pulse. The result showed that the transition energy from the (1)Q(x) states, consisting of the (1)Q(x(1,0))(pi,pi*) state (existing at 18800 cm(-1)) and (1)Q(x(0,0))(pi,pi*) state (existing at 17800 cm(-1)), to the (1)M state of six-coordinated ruthenium complex is lower than that of the five-coordinated ruthenium complex. The intersystem crossing (1)Q(x(0,0))(pi,pi*)->(3)(d,pi*) in the five-coordinate Ru(II)(TPP)(CO) in the solution was found to take place in about 1 ps.
Graduate students' self-reported perspectives regarding peer feedback and feedback from writing consultants
(2010-06-01)
Chen, Cheryl Wei-yu
;
英語教學研究所
;
Institute of Teaching English to speakers of other Languages
This study reported how ten Taiwanese Master's students perceived their experiences of receiving feedback given by their peers and writing consultants to revise a shortened version of their thesis proposals. Collected over the course of one semester, data included students' writing portfolios and interviews with them. Analysis of the data revealed three major themes: (1) The participants felt quite positive about providing and receiving peer feedback, although they seemed cautious toward language-related peer comments; (2) they generally had positive experience with the writing consultants, although the perceived usefulness of the consultants' feedback varied with individual consultants and (3) the two types of comments served different functions for students, and questions arose from the peer editing process could serve as prompts for writing consultation sessions. Possible future research directions as well as pedagogical implication are outlined to conclude the paper.