Browsing by Issue Date, starting with "2010-07-16"

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靜態隨機存取記憶體裝置
(2010-07-16)
張牧天
;
黃柏蒼
;
黃威
本發明揭露一種靜態隨機存取記憶體單元裝置,其包括第一反向器、第二反向器、存取電晶體以及讀取緩衝器。第一反向器與第二反向器分別包括多個第一操作元件與多個第二操作元件,以儲存資料。存取電晶體分別耦接第一反向器與第二反向器,其中第一操作元件與第二操作元件為高門檻電壓操作元件,存取電晶體為低門檻電壓電晶體。讀取緩衝器則用以執行讀取操作。
Liquid crystal alignment in nanoporous anodic aluminum oxide layer for LCD panel applications
(2010-07-16)
Hong, Chitsung
;
Tang, Tsung-Ta
;
Hung, Chi-Yu
;
Pan, Ru-Pin
;
Fang, Weileun
This paper reports the implementation and integration of a self-assembled nanoporous anodic aluminum oxide (np-AAO) film and liquid crystal (LC) on an ITO-glass substrate for liquid crystal display (LCD) panel applications. An np-AAO layer with a nanopore array acts as the vertical alignment layer to easily and uniformly align the LC molecules. Moreover, the np-AAO nanoalignment layer provides outstanding material properties, such as being inorganic with good transmittance, and colorless on ITO-glass substrates. In this application, an LCD panel, with the LC on the np-AAO nanoalignment layer, is successfully implemented on an ITO-glass substrate, and its performance is demonstrated. The measurements show that the LCD panel, consisting of an ITO-glass substrate and an np-AAO layer, has a transmittance of 60-80%. In addition, the LCD panel switches from a black state to a bright state at 3 V(rms), with a response time of 62.5 ms. In summary, this paper demonstrates the alignment of LC on an np-AAO layer for LCD applications.
虛擬流道平台
(2010-07-16)
范士岡
;
陳玟蓉
一種虛擬流道平台，該虛擬流道平台包含有：二電極平板以及至少二設置於該二電極平板之間的分隔件，其中該二電極平板之間能形成電場，而該二分隔件使得該二電極平板之間形成有一平面通道，且該平面通道內注入有一主要驅動流體，而當施加不同頻率電壓於該二電極平板時，該二電極平板之間產生出電場，而電場的變化進一步驅動該主要驅動流體於該平面通道中移動。
太陽能電源管理裝置及其管理方法
(2010-07-16)
蔡同豪
;
謝維致
;
黃威
本發明係揭露一種太陽能電源管理裝置及其管理方法,太陽能電源管理裝置包含一連接充電電池與光電轉換器之太陽能控制單元,以及一電壓產生電路,此電壓產生電路連接太陽能控制單元與充電電池,太陽能控制單元根據其分別和電壓產生電路與光電轉換器之連接處的電壓大小,以決定由光電轉換器或充電電池提供該電壓產生電路所需要的輸入電壓,且控制充電電池之充放電狀態,電壓產生電路則將輸入電壓調節為至少一種電壓訊號供外部負載使用。本發明係藉由太陽能控制單元的控制機制,以增長於夜晚的使用時間。
交大e-News第075期
(2010-07-20)
Secretariat
;
國立交通大學秘書室
Green-emitting phosphors and process for producing the same
(2010-07-20)
Chen
;
Teng-Ming
;
Chiu
;
Yi-Chen
This invention relates to a green phosphor and a process for producing the same, wherein the phosphor is represented by a chemical formula: M(Tb1-xLax)4Si3O13, where M includes at least one of Ca and Sr, and 0
混合式識別碼的整合方法
(2010-07-21)
王瑞堂
;
張乃心
;
曾建超
;
劉合翰
本發明是關於一種混合式識別碼的整合方法。透過制訂一種固定格式的識別碼，該識別碼由混合式識別碼分配法則所產生，其使用兩種以上的子識別碼分配法則並加以整合。網路中的實體節點依照該混合式識別碼分配法則設定相鄰節點之識別碼，該動作會持續直到該網路內的每一個節點都含有一組識別碼或可使用之識別碼分發完畢。當網路內要從一個節點繞送封包到另一個節點時，該節點使用混合式繞送機制比對本身和目的端節點的識別碼，並藉由比對結果來決定使用某子識別碼分配法則相對的繞送機制對封包進行繞送。此外，該識別碼將會針對不同的實體分佈或需求整合各分配法則的特性。因此，可以讓不同實體分佈之網路環境，都具有合適的識別碼分配法則，達到識別碼的個別化及識別碼的最佳使用率。
平板式濕式分離器、包含此平板式濕式分離器之用於連續式採樣及分析之系統及用於將氣體吸收及氧化之設備
(2010-07-21)
蔡春進
;
林冠宇
本發明為一種高效率的平板式濕式分離器，它的氣體吸收表面主要由兩片親水性多孔性玻璃平板所組成，其表面塗敷TiO2微粒並照射UV光可進一步產生一個超親水性的表面，有利於平板表面之均勻水膜的形成及氣體吸收效率的提升。本發明可用於人工的酸鹼氣體採樣裝置，酸鹼氣體吸收控制設備，氣體-微粒分離採樣設備，並可結合離子層析儀作成半自動酸鹼氣體-微粒的分離採樣儀器。
Investigation of Conformation-Dependent Properties of L-Phenylalanine in Neutral and Radical Cations by Using a Density Functional Taking into Account Noncovalent Interactions
(2010-07-22)
Baek, K. Y.
;
Hayashi, M.
;
Fujimura, Y.
;
Lin, S. H.
;
Kim, S. K.
Conformation-dependent properties of L-phenylalanine in neutral and radical cations have been studied by using density functional theory (DFT) with a new density functional M05-2X, which is applicable to molecular systems with nonconvalent interactions. Adiabatic and vertical ionization energies and charge distributions in the cationic conformers in addition to optimized geometrical structures for both the neutral and the cationic conformers were evaluated. These results were compared with DFT (B3LYP) results. The M05-2X results can explain the correspondence between the observed and predicted conformers without ambiguity. The possibility of conformerization of neutral conformers is indicated from the results of IRC (intrinsic reaction coordinate) profiles.
Fiber sensing system with self-detection mechanism
(2010-07-22)
Chow, Chi-Wai
;
Chi, Sien
;
Wang, Chia-Hsuan
;
Shih, Fu-Yuan
;
Yeh, Chein-Hung
The present invention discloses a fiber sensing system with self-detection mechanism which utilizes a central office to control secondary ring architecture formed by fiber sensor, remote node and optical coupler primarily. The secondary ring architecture is connected serially to form a primary ring architecture. The central office has a tunable laser light source that can deliver the light source to the fiber sensor. Since the fiber sensor has reflective ability, all light source signal sent by the tunable laser light source will be detected and measured by the fiber sensor. Thus central office can detect all signals reflected by the fiber sensor and produce a spectrum for analyzing fault point locations. The present invention can greatly enhance survivability and sensing capacity of all fiber sensors, so that when a fault point caused by environmental change within the fiber, it will not effect the overall operation of the sensing mechanism. The application of fiber sensor can also reduce cost and complexity of the overall fiber network topology.
DEVICE, METHOD AND SYSTEM FOR EXCHANGE OF INFORMATION BETWEEN MULTIPLE WIRELESS NETWORK GROUPS
(2010-07-22)
Cheng, Shih-Heng
;
Huang, Ching-Yao
Exchanging information between multiple wireless network groups is implemented by a wireless channel with a wide transmission range and a wireless channel with a narrow transmission range so as to predetermine data transmission schedule of each node of the multiple wireless network groups. Hence, a drawback of the prior art, that is, reduced transmission efficiency and increased power consumption due to collisions between packets of the multiple wireless network groups, is overcome.
Site-controlled self-assembled InAs quantum dots grown on GaAs substrates
(2010-07-23)
Lin, Shih-Yen
;
Tseng, Chi-Che
;
Chung, Tung-Hsun
;
Liao, Wen-Hsuan
;
Chen, Shu-Han
Atomically-flat surfaces are obtained after thin GaAsSb buffer layer growth on GaAs substrates with regular-distributed nano-holes formed after oxide desorption of the local atomic-force-microscopy anode oxidation. Different from the samples with GaAsSb buffer layers, increasing surface root-mean-square roughness is observed for the GaAs-buffered samples with increasing GaAs buffer layer thickness. The phenomenon is attributed to the enhanced adatom migration resulting from the incorporation of Sb atoms. By using the substrates with nano-holes after buffer layer growth, site-controlled self-assembled InAs quantum dots (QDs) are observed with the deposition of a below-critical-thickness InAs coverage of 1.3 monolayer (ML).
Highly stable precursor solution containing ZnO nanoparticles for the preparation of ZnO thin film transistors
(2010-07-23)
Huang, Heh-Chang
;
Hsieh, Tsung-Eong
;
材料科學與工程學系
;
Department of Materials Science and Engineering
ZnO particles with an average size of about 5 nm were prepared via a sol-gel chemical route and the silane coupling agent, (3-glycidyloxypropyl)-trimethoxysilane (GPTS), was adopted to enhance the dispersion of the ZnO nanoparticles in ethyl glycol (EG) solution. A ZnO surface potential as high as 66 mV was observed and a sedimentation test showed that the ZnO precursor solution remains transparent for six months of storage, elucidating the success of surface modification on ZnO nanoparticles. The ZnO thin films were then prepared by spin coating the precursor solution on a Si wafer and annealing treatments at temperatures up to 500 degrees C were performed for subsequent preparation of ZnO thin film transistors (TFTs). Microstructure characterization revealed that the coalescence of ZnO nanoparticles occurs at temperatures as low as 200 degrees C to result in a highly uniform, nearly pore-free layer. However, annealing at higher temperatures was required to remove organic residues in the ZnO layer for satisfactory device performance. The 500 degrees C-annealed ZnO TFT sample exhibited the best electrical properties with on/off ratio = 10(5), threshold voltage = 17.1 V and mobility (mu) = 0.104 cm(2) V(-1) s(-1).
Molecular characterization of the PhoPQ-PmrD-PmrAB mediated pathway regulating polymyxin B resistance in Klebsiella pneumoniae CG43
(2010-07-24)
Cheng, Hsin-Yao
;
Chen, Yi-Fong
;
Peng, Hwei-Ling
;
生物科技學系
;
分子醫學與生物工程研究所
Background: The cationic peptide antibiotic polymyxin has recently been reevaluated in the treatment of severe infections caused by gram negative bacteria. Methods: In this study, the genetic determinants for capsular polysaccharide level and lipopolysaccharide modification involved in polymyxin B resistance of the opportunistic pathogen Klebsiella pneumoniae were characterized. The expressional control of the genes responsible for the resistance was assessed by a LacZ reporter system. The PmrD connector-mediated regulation for the expression of pmr genes involved in polymyxin B resistance was also demonstrated by DNA EMSA, two-hybrid analysis and in vitro phosphor-transfer assay. Results: Deletion of the rcsB, which encoded an activator for the production of capsular polysaccharide, had a minor effect on K. pneumoniae resistance to polymyxin B. On the other hand, deletion of ugd or pmrF gene resulted in a drastic reduction of the resistance. The polymyxin B resistance was shown to be regulated by the two-component response regulators PhoP and PmrA at low magnesium and high iron, respectively. Similar to the control identified in Salmonella, expression of pmrD in K. pneumoniae was dependent on PhoP, the activated PmrD would then bind to PmrA to prolong the phosphorylation state of the PmrA, and eventually turn on the expression of pmr for the resistance to polymyxin B. Conclusions: The study reports a role of the capsular polysaccharide level and the pmr genes for K. pneumoniae resistance to polymyxin B. The PmrD connector-mediated pathway in governing the regulation of pmr expression was demonstrated. In comparison to the pmr regulation in Salmonella, PhoP in K. pneumoniae plays a major regulatory role in polymyxin B resistance.
The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitor
(2010-07-26)
Trinh, H. D.
;
Chang, E. Y.
;
Wu, P. W.
;
Wong, Y. Y.
;
Chang, C. T.
The inversion behaviors of atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitors are studied by various surface treatments and postdeposition annealing using different gases. By using the combination of wet sulfide and dry trimethyl aluminum surface treatment along with pure hydrogen annealing, a strong inversion capacitance-voltage (C-V) response is observed, indicating a remarkable reduction in interface trap state density (D-it) at lower half-part of In0.53Ga0.47As band gap. This low D-it was confirmed by the temperature independent C-V stretch-out and horizontal C-V curves. The x-ray photoelectron spectroscopy spectra further confirm the effectiveness of hydrogen annealing on the reduction of native oxides. (C) 2010 American Institute of Physics. [doi:10.1063/1.3467813]
Oxygen vacancy estimation of high k metal gate using thermal dynamic model
(2010-07-26)
Chang, H. L.
;
Liang, M. S.
;
材料科學與工程學系
;
Department of Materials Science and Engineering
Oxygen vacancies are electronic defects in materials. In a metal oxide system, the distribution of such vacancies is determined by the oxygen affinity. This study predicts the oxygen vacancy concentration in a high-k/metal gate system using a developed thermal dynamic model. A system with Ti:N=2 has a 200 mV lower flat band voltage than an N rich metal. The Gibbs free energy of formation of oxygen vacancies, similar to 0.5 eV, is derived from flab band voltage shifts and created neutral oxygen vacancy. The oxygen vacancy model based on estimating thermal dynamics is proposed. (C) 2010 American Institute of Physics. [doi:10.1063/1.3473772]
Carrier dynamics in isoelectronic ZnSe(1-x)O(x) semiconductors
(2010-07-26)
Lin, Y. C.
;
Chung, H. L.
;
Chou, W. C.
;
Chen, W. K.
;
Chang, W. H.
This study explores the effects of both Oxygen and temperature on the carrier dynamics of isoelectronic ZnSe(1-x)O(x) (x=0.027 and 0.053) semiconductors using photoluminescence (PL) and time-resolved PL spectroscopy. We find that the Kohlrausch law is highly consistent with the complex decay traces induced by isoelectronic O traps, and the mechanism of carrier recombination undergoes a complicated change from trapped to free excitons with the increase in temperature. Complex recombination processes are clarified using the relaxation model based on various decay channels. These findings are consistent with the initial fall in the stretching exponent beta followed by its monotonic increase with increasing temperature. (C) 2010 American Institute of Physics. [doi:10.1063/1.3473776]
The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al(2)O(3)/n-In(0.53)Ga(0.47)As metal-oxide-semiconductor capacitor
(2010-07-26)
Trinh, H. D.
;
Chang, E. Y.
;
Wu, P. W.
;
Wong, Y. Y.
;
Chang, C. T.
The inversion behaviors of atomic-layer-deposition Al(2)O(3)/n-In(0.53)Ga(0.47)As metal-oxide-semiconductor capacitors are studied by various surface treatments and postdeposition annealing using different gases. By using the combination of wet sulfide and dry trimethyl aluminum surface treatment along with pure hydrogen annealing, a strong inversion capacitance-voltage (C-V) response is observed, indicating a remarkable reduction in interface trap state density (D(it)) at lower half-part of In(0.53)Ga(0.47)As band gap. This low D(it) was confirmed by the temperature independent C-V stretch-out and horizontal C-V curves. The x-ray photoelectron spectroscopy spectra further confirm the effectiveness of hydrogen annealing on the reduction of native oxides. (C) 2010 American Institute of Physics. [doi:10.1063/1.3467813]
Carrier dynamics in isoelectronic ZnSe1-xOx semiconductors
(2010-07-26)
Lin, Y. C.
;
Chung, H. L.
;
Chou, W. C.
;
Chen, W. K.
;
Chang, W. H.
This study explores the effects of both Oxygen and temperature on the carrier dynamics of isoelectronic ZnSe1-xOx (x=0.027 and 0.053) semiconductors using photoluminescence (PL) and time-resolved PL spectroscopy. We find that the Kohlrausch law is highly consistent with the complex decay traces induced by isoelectronic O traps, and the mechanism of carrier recombination undergoes a complicated change from trapped to free excitons with the increase in temperature. Complex recombination processes are clarified using the relaxation model based on various decay channels. These findings are consistent with the initial fall in the stretching exponent beta followed by its monotonic increase with increasing temperature. (C) 2010 American Institute of Physics. [doi:10.1063/1.3473776]
Power-rail ESD protection circuit without lock-on failure
(2010-07-27)
Ker
;
Ming-Dou
;
Yen
;
Cheng-Cheng
;
Chen
An ESD protection circuit including a discharge device, a first detection circuit, and a second detection circuit. The discharge device provides a discharge path between a first power rail and a second power rail when the discharge device is activated. The discharge device stops providing the discharge path when the discharge device is de-activated. The first detection circuit is coupled between the first and the second power rails. The first detection circuit activates the discharge device when an ESD event occurs in the first power rail. The second detection circuit de-activates the discharge device when the ESD event does not occur in the first power rail.