Browsing by Issue Date, starting with "2010-08-01"

Now showing 1 - 20 of 45632

Parallel-RC Feedback Low-Noise Amplifier for UWB Applications
(2010-08-01)
He, Kuang-Chi
;
Li, Ming-Tsung
;
Li, Chen-Ming
;
Tarng, Jenn-Hwan
;
電信工程研究所
A two-stage 3.1- to 10.6-GHz ultrawideband CMOS low-noise amplifier (LNA) is presented. In our design, a parallel resistance-capacitance shunt feedback with a source inductance is proposed to obtain broadband input matching and to reduce the noise level effectively; furthermore, a parallel inductance-capacitance network at drain is drawn to further suppress the noise, and a very low noise level is achieved. The proposed LNA is implemented by the Taiwan Semiconductor Manufacturing Company 0.18-mu m CMOS technology. Measured results show that the noise figure is 2.5-4.7 dB from 3.1 to 10.6 GHz, which may be the best result among previous reports in the 0.18-mu m CMOS 3.1- to 10.6-GHz ultrawideband LNA. The power gain is 10.9-13.9 dB from 3.1 to 10.6 GHz. The input return loss is below -9.4 dB from 3.1 to 15 GHz. It consumes 14.4 mW from a 1.4-V supply voltage and occupies an area of only 0.46 mm(2).
Prediction of small non-coding RNA in bacterial genomes using support vector machines
(2010-08-01)
Chang, Tzu-Hao
;
Wu, Li-Ching
;
Lin, Jun-Hong
;
Huang, Hsien-Da
;
Liu, Baw-Jhiune
Small non-coding RNA genes have been shown to play important regulatory roles in a variety of cellular processes, but prediction of non-coding RNA genes is a great challenge, using either an experimental or a computational approach, due to the characteristics of sRNAs, which are that sRNAs are small in size, are not translated into proteins and show variable stability. Most known sRNAs have been identified in Escherichia coli and have been shown to be conserved in closely related organisms. We have developed an integrative approach that searches highly conserved intergenic regions among related bacterial genomes for combinations of characteristics that have been extracted from known E. coli sRNA genes. Support vector machines (SVM) were then used with these characteristics to predict novel sRNA genes. (c) 2010 Elsevier Ltd. All rights reserved.
The flipping puzzle on a graph
(2010-08-01)
Huang, Hau-wen
;
Weng, Chih-wen
;
應用數學系
;
Department of Applied Mathematics
Let S be a connected graph which contains an induced path of n - 1 vertices, where n is the order of S. We consider a puzzle on S. A configuration of the puzzle is simply an n-dimensional column vector over {0, 1} with coordinates of the vector indexed by the vertex set S. For each configuration u with a coordinate u(s) = 1, there exists a move that sends u to the new configuration which flips the entries of the coordinates adjacent to s in u. We completely determine if one configuration can move to another in a sequence of finite steps. (C) 2010 Published by Elsevier Ltd
Particular Failure Mechanism of GaN-Based Alternating Current Light-Emitting Diode Induced by GaOx Oxidation
(2010-08-01)
Yen, Hsi-Hsuan
;
Kuo, Hao-Chung
;
Yeh, Wen-Yung
;
光電工程學系
;
光電工程研究所
This investigation describes the unique failure mechanism of the Wheatstone bridge circuit-type alternating current light-emitting diode (WB AC-LED). The micro-LEDs in WB AC-LED rectifying branches were reverse biased, and therefore, positive charges (holes) accumulated in the n-type GaN layer under the active region and combined with the GaN material and OH- ions to generate GaOx oxidation grains. The GaOx generation speed was fast with high reverse voltage applied to micro-LEDs, and the expansion of GaOx dimensions degraded the opto-electrical characteristics and eventually caused failure of the WB AC-LED. The root-mean-square reverse voltage dropped across each micro-LED from -13.1 to -6.7 V with different micro-LEDs array arrangements extended the WB AC-LED life-time from being less than 650 h to more than 1600 h, respectively.
Ultrasensitive semiconductor biochip for cancer marker detection
(2010-08-01)
Ko, Fu-Hsiang
;
Chuang, Cheng-Keng
;
Pang, See-Tong
;
Pan, Tung-Ming
;
材料科學與工程學系
An interactive optimization system for the location of supplementary recycling depots
(2010-08-01)
Lin, Hung-Yueh
;
Chen, Guan-Hwa
;
Lee, Pei-Hao
;
Lin, Chun-Hsu
;
環境工程研究所
In order to increase participation in residential recycling, convenient access to recycling depots is essential. Currently, most vendors have established various take-back systems in local retail shops. The integration of the recycling depots established by local authorities with these private facilities can significantly improve access for residents. As a response to this need, an integrated system capable of providing optimization analysis and geographical information system functions has been designed to assist local authorities in identifying the regions where supplementary recycling depots need to be located to improve access to. A customized program which allows online optimization analysis has been developed and embedded in an integrated system. Through a user-friendly interface, users can interactively locate the supplementary depots within the desired regions. The interactive process improves the flexibility of the integrated system and avoids the shortcomings of impractical locations for recycling depots. A case study of battery recycling in central Taiwan is presented to demonstrate the effectiveness of the integrated system. By using the proposed integrated system to analyze the existing conditions, the locations of supplementary points to improve access to the existing regional recycling collection points can be determined. In short, the proposed methodology provides local authorities with an uncomplicated and streamlined system with which to determine the number and locations of supplementary recycling points. (C) 2009 Elsevier B.V. All rights reserved.
Molecular hosts for triplet emitters in organic light-emitting diodes and the corresponding working principle
(2010-08-01)
Mi BaoXiu
;
Gao ZhiQiang
;
Liao ZhangJin
;
Huang Wei
;
Chen, Chin Hsin
This paper summarizes the mechanism and routes for excitation of triplet emitters in dopant emission based phosphorescent organic light-emitting diodes (PhOLEDs), providing a comprehensive overview of recent progress in molecular hosts for triplet emitters in PhOLEDs. Particularly, based on the nature of different hosts, e.g., hole transporting, electron transporting or bipolar materials, in which the dopant emitters can be hosted to generate phosphorescence, the respective device performances are summarized and compared. Highlights are given to the relationships among the molecular structure, thermal stability, triplet energy, carrier mobility, molecular orbital energy level and their corresponding device performances.
Diamond plates on dome-like particles: preparation, characterization and field emission properties
(2010-08-01)
Tiwari, Rajanish N.
;
Chen, Wei-Chun
;
Tiwari, Jitendra N.
;
Wang, Wei-Lin
;
Chang, Li
Thin diamond microplates have been grown on dome-like/hemispherical carbon particles on titanium carbide by a microwave plasma chemical vapour deposition (MPCVD) method using a gas mixture of methane and hydrogen. The diamond microplates have a thickness of about 200 nm. A thin (300 nm) film of titanium carbide was formed during carburization of sputtered titanium on an Si(100) substrate in MPCVD. The hemispherical carbon particles were covered with diamond microplates. The diamond microplates are isolated electron-emitting spherules and exhibit a low threshold (50 V mu m (1)) and high current density (0.92 mA cm(-2)) in their field emission properties. A possible mechanism for the formation of the diamond microplates and hemispherical carbon particles is presented.
Applying jump-diffusion processes to liquidate and convert venture capital
(2010-08-01)
Lin, Tyrone T.
;
Ko, Chuan-Chuan
;
Chang, Chia-Wen
;
經營管理研究所
;
Institute of Business and Management
This study attempts to apply real options and expand the model designed by Lin and Huang [Lin, T.T., Huang, Y.T.: J. Technol. Manage. 8(3), 59-78 (2003)], which helps venture capital (VC) companies to optimize project exit decisions. The expected discounted factor and a jump-diffusion process combine to assess the value of a start-up company, and determine the threshold of the exit timing of liquidation or convertibility for establishing the optimal disinvestment evaluation model for VC companies. When the project value is below V(L)*, the VC company carries out liquidation, but when the project value exceeds V(C)*, the VC company performs convertibility. The project value is ranging between (V(L)*, V(C)*), and the best choice is holding the decision and waiting to carry out the rights of liquidation and convertibility next time. Besides, this work attempts to identify the expected discounted time in terms of the investment time for VC companies.
Implementation of a transient adaptive sub-cell module for the parallel-DSMC code using unstructured grids
(2010-08-01)
Su, C. C.
;
Tseng, K. C.
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Cave, H. M.
;
Wu, J. S.
;
Lian, Y. Y.
A method of transient adaptive sub-cells (TAS) suitable for unstructured grids that is modified from the existing one for the structured grids of DSMC is Introduced. The TAS algorithm is implemented within the framework of a parallelized DSMC code (PDSC). Benchmarking tests are conducted for steady driven cavity flow, steady hypersonic flow over a two-dimensional cylinder, steady hypersonic flow over a cylinder/flare and the unsteady vortex shedding behind a two-dimensional cylinder The use of TAS enables a reduction in the computational expense of the simulation since larger sampling cells and less simulation particles can be employed. Furthermore, the collision quality of the simulation is maintained or improved and the preservation of property gradients and vorticity at the scale of the sub-cells enables correct unsteady vortex shedding frequencies to be predicted The use of TAS in a parallel-DSMC code allows simulations of unsteady processes at a level to be carried out efficiently, accurately and with acceptable computational time (C) 2010 Elsevier Ltd All rights reserved
平面天線
(2010-08-01)
鍾世忠
;
王思本
;
凌菁偉
本發明係揭露一種平面天線,其包含一基板、一接地面以及一饋入線,接地面設置於基板之一側,且接地面具有一鏤空部,饋入線用以饋入一訊號,且設置於該基板之另一側,對應該鏤空部。本發明亦揭露一種平面天線,其包含一基板、一接地面以及一饋入線,接地面設置於基板之一側,且接地面具有一第一鏤空部和一第二鏤空部,饋入線用以饋入一訊號,並設置於該基板之另一側,該饋入線具有一第一分支饋入部和一第二分支饋入部,且該第一分支饋入部和該第二分支饋入部分別對應該第一鏤空部和該第二鏤空部。
Using fast adaptive neural network classifier for mutual fund performance evaluation
(2010-08-01)
Wang, Kehluh
;
Huang, Szuwei
;
資訊管理與財務金融系註：原資管所+財金所
;
Department of Information Management and Finance
Application of financial information systems requires instant and fast response for continually changing market conditions. The purpose of this paper is to construct a mutual fund performance evaluation model utilizing the fast adaptive neural network classifier (FANNC), and to compare its performance in classification and forecasting with those from a backpropagation neural network (BPN) model. FANNC is a newly-developed model which combines features of adaptive resonance theory and field theory. In our experiment, the FANNC approach requires much less time than the BPN approach to evaluate mutual fund performance. RMS is also superior for FANNC. These results hold for both classification problems and for prediction problems, making FANNC ideal for financial applications which require massive volumes of data and routine updates. Consequently, an on-line evaluation system can be established to provide real-time mutual fund performance for investors. (C) 2010 Elsevier Ltd. All rights reserved.
Fracture prediction of dissimilar thin film materials in Cu/low-k packaging
(2010-08-01)
Lee, Chang-Chun
;
Lee, Chien-Chen
;
Yang, Ya-Wen
;
生物科技學系
;
Department of Biological Science and Technology
For current semiconductor technology, interfacial crack in stacked thin films of Cu/low-k damascene integration is a critical reliability issue that needs to be urgently resolved. In addition to the measurement of 4-point bending test, how to precisely estimate the adhesion energy between dissimilar films through simulation, based on fracture mechanics is important while designing robust interconnect structures as well as developing next-generation low-k materials. Distinct from the former studies, this research proposes a novel tie-release crack prediction technique based on finite element calculations in order to consider the stress-induced impacts on the thermo-mechanical reliability of the microelectronic package with a low-k chip during the different cracking length of film interfaces. To ensure the correctness and feasibility of the presented technique, a plastic ball array (PBGA) package with stacked Cu/low-k interconnects is implemented as test vehicle to validate actual testing data of experiments and evaluate the variation of interfacial cracking energy while silicon chip becomes thinner. Through the combination of J-integral approach with the technique of global-local sub-modeling, all the predicted results for the forgoing referred cases reveal a good agreement with the physical behaviors of devices. Therefore, it can be concluded that the proposed methodology is highly reliable in estimating the occurrence opportunities of interfacial crack.
Morphology and optical properties of single- and multi-layer InAs quantum dots
(2010-08-01)
Hsu, Chiung-Chih
;
Hsu, Ray-Quen
;
Wu, Yue-Han
;
機械工程學系
;
材料科學與工程學系
An understanding of the structural and optical properties of quantum dots (QDs) is critical for their use in optical communication devices. In this study, single- and multi-layer self-organized InAs QDs grown on (001) GaAs substrates by molecular beam epitaxy (MBE) were investigated. High-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) images show that the lateral size of multi-layer InAs QDs are larger and flatter than single-layer InAs QDs, which are oval-shaped. The change in shape and size may be attributed to the presence of InGaAs spacer layers in multi-layer InAs QDs. Reciprocal spacer mapping and fast Fourier transformation images clearly show that InGaAs spacer layers present in the multi-layer InAs QDs structures help to release the strain originally existing in the QDs. In addition, the photoluminescence peak of the multi-layer InAs QDs is broader than QD in the single-layer one, which implies that the multi-layer InAs QDs size variation is more random than the single-layer one and this corresponds with the HAADF-STEM images. These results prove that spacer layers release strain influencing the morphology and optical properties of the QDs.
Applying jump-diffusion processes to liquidate and convert venture capital
(2010-08-01)
Lin, Tyrone T.
;
Ko, Chuan-Chuan
;
Chang, Chia-Wen
;
經營管理研究所
;
Institute of Business and Management
This study attempts to apply real options and expand the model designed by Lin and Huang [Lin, T.T., Huang, Y.T.: J. Technol. Manage. 8(3), 59-78 (2003)], which helps venture capital (VC) companies to optimize project exit decisions. The expected discounted factor and a jump-diffusion process combine to assess the value of a start-up company, and determine the threshold of the exit timing of liquidation or convertibility for establishing the optimal disinvestment evaluation model for VC companies. When the project value is below V(L)*, the VC company carries out liquidation, but when the project value exceeds V(C)*, the VC company performs convertibility. The project value is ranging between (V(L)*, V(C)*), and the best choice is holding the decision and waiting to carry out the rights of liquidation and convertibility next time. Besides, this work attempts to identify the expected discounted time in terms of the investment time for VC companies.
64-Bit and 128-bit DX random number generators
(2010-08-01)
Deng, Lih-Yuan
;
Lu, Henry Horng-Shing
;
Chen, Tai-Been
;
統計學研究所
;
Institute of Statistics
Extending 32-bit DX generators introduced by Deng and Xu (ACM Trans Model Comput Simul 13:299-309, 2003), we perform an extensive computer search for classes of 64-bit and 128-bit DX generators of large orders. The period lengths of these high resolution DX generators are ranging from 10(1915) to 10(58221). The software implementation of these generators can be developed for 64-bit or 128-bit hardware. The great empirical performances of DX generators have been confirmed by an extensive battery of tests in the TestU01 package. These high resolution DX generators can be useful to perform large scale simulations in scientific investigations for various computer systems.
Integrating independent component analysis and support vector machine for multivariate process monitoring
(2010-08-01)
Hsu, Chun-Chin
;
Chen, Mu-Chen
;
Chen, Long-Sheng
;
運輸與物流管理系註：原交通所+運管所
;
Department of Transportation and Logistics Management
This study aims to develop an intelligent algorithm by integrating the independent component analysis (ICA) and support vector machine (SVM) for monitoring multivariate processes. For developing a successful SVM-based fault detector, the first step is feature extraction. In real industrial processes, process variables are rarely Gaussian distributed. Thus, this study proposes the application of ICA to extract the hidden information of a non-Gaussian process before conducting SVM. The proposed fault detector will be implemented via two simulated processes and a case study of the Tennessee Eastman process. Results demonstrate that the proposed method possesses superior fault detection when compared to conventional monitoring methods, including PCA, ICA, modified ICA, ICA-PCA and PCA-SVM. Crown Copyright (C) 2010 Published by Elsevier Ltd. All rights reserved.
An analysis of the formability of aluminum/copper clad metals with different thicknesses by the finite element method and experiment
(2010-08-01)
Tseng, Huang-Chi
;
Hung, Chinghua
;
Huang, Chin-Chuan
;
交大名義發表
;
機械工程學系
In this research, the possibility of applying forming limit diagrams to the formability and fracture prediction of clad metal sheets is examined. The forming limits of clad metal sheets with different thickness combinations (e.g., A1050 1.0, 1.5, 2.0 mm/C1100 1.0 mm) are investigated via forming limits test (punch stretching tests). The true stress-strain curves of Al/Cu clad metal sheets are obtained through tensile tests. Using the experimental forming limit diagrams and the stress-strain curves, the fracture prediction of clad metal sheets are simulated by finite element analysis. Moreover, deep drawing tests are carried out to compare the experimental with the numerical results. These results can verify the accuracy of finite element model. Finally, significant differences in formability are found, and comparisons of the fracture prediction of clad metals with different initial thickness ratios are analyzed both numerically and experimentally.
A Multi-Voting Enhancement for Newborn Screening Healthcare Information System
(2010-08-01)
Hsieh, Sung-Huai
;
Cheng, Po-Hsun
;
Chen, Chi-Huang
;
Huang, Kuo-Hsuan
;
Chen, Po-Hao
The clinical symptoms of metabolic disorders during neonatal period are often not apparent. If not treated early, irreversible damages such as mental retardation may occur, even death. Therefore, practicing newborn screening is essential, imperative to prevent neonatal from these damages. In the paper, we establish a newborn screening model that utilizes Support Vector Machines (SVM) techniques and enhancements to evaluate, interpret the Methylmalonic Acidemia (MMA) metabolic disorders. The model encompasses the Feature Selections, Grid Search, Cross Validations as well as multi model Voting Mechanism. In the model, the predicting accuracy, sensitivity and specificity of MMA can be improved dramatically. The model will be able to apply to other metabolic diseases as well.
Transient Device Simulation of Floating Gate Nonvolatile Memory Cell With a Local Trap
(2010-08-01)
Watanabe, Hiroshi
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
The single-electron general-purpose device simulator is improved to carry out a wide-range transient analysis from 1 ps to 10 years. We apply this simulator to a floating gate (FG) nonvolatile memory cell in order to simulate a degradation mode of data retention owing to the direct tunneling enhanced by the fixed charge stored by a local trap in an interpoly dielectric. The scaling impact of ideal high-K interpoly dielectric FG nonvolatile memory cell is also investigated.