Browsing by Issue Date, starting with "2010-12-28"

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Design of Artificial Hollow Moth-Eye Structures Using Anodic Nanocones for High-Performance Optics
(2010-12-28)
Wu, Chia-Tien
;
Lin, Chun-Hung
;
Cheng, Chieh
;
Wu, Chung-Shu
;
Ting, Huai-Chen
We demonstrated an innovative approach for the fabrication of self-organized, hollow-to-solid nanocone arrays, using a decoupling two-step anodization of an Al/Ta interlayer on a substrate. The porosity of the hollow nanostructures was tunable by the deposited thickness of Ta film. We also employed subwavelength nanocone arrays as Moth-eye structures for high-performance antireflection coatings. These oxide nanostructures greatly suppressed reflectance over a large range of wavelengths and angles of incidence and displayed a good mechanical stability. When a corresponding porosity was designed, these nanostructures could be applied to various substrates for an effective antireflection coating. In addition, we were able to customize antireflection coatings for various types of substrates or materials of interest based on the suitable coating of initial Ta thickness.
《失去的地平線》縱橫談
(2010-12-29)
達瓦才仁
;
開放教育推動中心
;
Open Education Office
課程首頁本課程是由交通大學新文藝復興閱讀計畫提供。 96 年 8 月當各大學紛紛摩拳擦掌準備迎接新生的同時，交通大學校長吳重雨則因為一則來自於七月份泰晤士報，有關於英國首相布朗公布其夏日讀書清單的新聞中，看到了他對知識的尊重。在這同時，吳重雨校長也思考著，要如何為學生準備追求知識的環境和激發他們對知識的尊重與喜愛。台積電張忠謀董事長曾陳述他 18 歲進入哈佛那一年，博覽文史哲理工經典群籍，至此奠定了他求知的基礎，並借海明威名言，將其改為「哈佛這一年為人生可帶走的盛宴。」吳重雨校長以張董事長的學習為借鏡，認為學生固然能藉由自我閱讀的方式學習到豐沛的知識，但透過名人、大師親臨現場地介紹經典書籍，更能加深學子們對於書籍的認識與興趣，這也是「新文藝復興閱讀計劃」 ( 以下簡稱 : 「經典名著選讀」 ) 活動展開籌劃的緣由。於是，吳重雨校長便積極敦請「交大通識教育委員會」，接手籌備本計劃的相關活動，而該中心也成為實際施行本計畫的策動、開課以及認證單位。至此，期許交大學子藉由閱讀、聽講來提昇人文素養、開拓視野的「新文藝復興閱讀計劃」，就此展開。
Reproducible resistance switching of a relatively thin FeO(x) layer produced by oxidizing the surface of a FePt electrode in a metal-oxide-metal structure
(2010-12-30)
Feng, Li-Wei
;
Chang, Yao-Feng
;
Chang, Chun-Yen
;
Chang, Ting-Chang
;
Wang, Shin-Yuan
In this study, reproducible resistance switching effects were demonstrated on a relatively thin FeO(x) layer in the TiN/SiO(2)/FeO(x)/FePt structure produced by oxidizing the surface of a FePt electrode during a plasma-enhanced tetraethyl orthosilicate oxide deposition process. Characteristics of the non-stoichiometric FeO(x) transition layer were examined by Auger electron spectroscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy analyses. In addition, characteristics of the forming process as well as the current transport characteristics after forming process in the TiN/SiO(2)/FeO(x)/FePt structure were discussed. Moreover, the role of the silicon oxide layer was also experimentally demonstrated to act as an additional supplier of oxygen ions for the switching requirement by biasing high voltage bias conditions. (C) 2010 Elsevier B.V. All rights reserved.
INTELLIGENT CLASSIFICATION METHOD OF VOCAL SIGNAL
(2010-12-30)
BAI, MINGSIAN R.
;
CHEN, MENG-CHUN
An intelligent classification method is proposed. The method extracts vocal features from the temporal domain, spectral domain and statistical features for measuring the vocal signal. The measured result is grouped by comparing with the trained data with single voiced source, and then different voices can be separated from the vocal signal to be classified. The vocal features are evaluated from temporal domain and spectral domain and the statistical features, and the method can improve the accuracy of the voice classification.
Effect of the Medium on Intramolecular H-Atom Tunneling: Cis-Trans Conversion of Formic Acid in Solid Matrixes of Noble Gases
(2010-12-30)
Trakhtenberg, Leonid I.
;
Fokeyev, Anatoly A.
;
Zyubin, Alexander S.
;
Mebel, Alexander M.
;
Lin, S. H.
Intramolecular tunneling of a hydrogen atom in formic acid at low temperatures has been studied theoretically on the basis of quantum-chemical modeling of HCOOH@Nb(12) clusters. Three noble matrixes (Ar, Kr, and Xe) are considered. Energetic and geometric parameters as well as vibrational frequencies for the formic acid in cis and trans configurations surrounded by 12 Nb atoms are calculated within the frame of the MP2 approach with extended basis sets. The rate constant of HCOOH cis-trans conversion is analyzed by taking into account matrix reorganization and the change of HCOOH position in the cluster. The matrix reorganization is considered within the Debye model of lattice vibrations, whereas the external motion of HCOOH in the cluster is treated using the Einstein model of solids. It has been shown that the literature experimental data on the cis to trans tunneling reaction in the formic acid can be accounted for within the proposed mechanism, which describes the matrix reorganization and the change of the HCOOH position in the noble gas matrix, with fitting parameters of the suggested theoretical model attaining reasonable values.
Ab Initio Chemical Kinetics for SiH(3) Reactions with Si(x)H(2x+2) (x=1-4)
(2010-12-30)
Raghunath, P.
;
Lin, M. C.
;
應用化學系分子科學碩博班
;
Institute of Molecular science
Gas-phase kinetics and mechanisms of SiH(3) reactions with SiH(4), Si(2)H(6), Si(3)H(8), and Si(4)H(10), processes of relevance to a-Si thin-film deposition, have been investigated by ab initio molecular orbital and transition-state theory (TST) calculations. Geometric parameters of all the species involved in the title reactions were optimized by density functional theory at the B3LYP and BH&HLYP levels with the 6-311++G(3df,2p) basis set. The potential energy surface of each reaction was refined at the CCSD(T)/6-311++G(3df,2p) level of theory. The results show that the most favorable low energy pathways in the SiH3 reactions with these silanes occur by H abstraction, leading to the formation of SiH(4) + Si(x)H(2x+1)(silanyl) radicals. For both Si(3)H(8) and n-Si(4)H(10) reactions, the lowest energy barrier channels take place by secondary Si-H abstraction, yielding SiH(4) + s-Si(3)H(7) and SiH(4) + s-Si(4)H(9), respectively. In the i-Si(4)H(10) reaction, tertiary Si-H abstraction, has the lowest barrier producing SiH(4) + t-Si(4)H(9). In addition, direct SiH(3)-for-X substitution reactions forming Si(2)H(6) + X (X = H or silanyls) can also occur, but with significantly higher reaction barriers. A comparison of the SiH(3) reactions with the analogous CH(3) reactions with alkanes has been made. The rate constants for low-energy product channels have been calculated for the temperature range 300-2500 K by TST with Eckart tunneling corrections. These results, together with predicted heats of formation of various silanyl radicals and Si(4)H(10) isomers, have been tabulated for modeling of a-Si:H film growth by chemical vapor deposition.
Formation and nonvolatile memory characteristics of W nanocrystals by in-situ steam generation oxidation
(2010-12-30)
Chen, Shih-Cheng
;
Chang, Ting-Chang
;
Hsieh, Chieh-Ming
;
Li, Hung-Wei
;
Sze, S. M.
The authors provide the formation and memory effects of W nanocrystals nonvolatile memory in this study. The charge trapping layer of stacked a-Si and WSi(2) was deposited by low pressure chemical vapor deposition (LPCVD) and was oxidized by in-situ steam generation system to form uniform W nanocrystals embedded in SiO(2). Transmission electron microscopy analyses revealed the microstructure in the thin film and X-ray photon-emission spectra indicated the variation of chemical composition under different oxidizing conditions. Electrical measurement analyses showed the different charge storage effects because the different oxidizing conditions influence composition of trapping layer and surrounding oxide quality. Moreover, the data retention and endurance characteristics of the formed W nanocrystal memory devices were compared and studied. The results show that the reliability of the structure with 2% hydrogen and 98% oxygen at 950 degrees C oxidizing condition has the best performance among the samples. (C) 2010 Elsevier B.V. All rights reserved.
Crawford numbers of powers of a matrix
(2010-12-30)
Wang, Kuo-Zhong
;
Wu, Pei Yuan
;
Gau, Hwa-Long
;
應用數學系
;
Department of Applied Mathematics
For an n-by-n matrix A, its Crawford number c(A) (resp., generalized Crawford number C(A)) is, by definition, the distance from the origin to its numerical range W(A) (resp., the boundary of its numerical range partial derivative W(A)). It is shown that if A has eigenvalues lambda(1), ..., lambda(n) An arranged so that vertical bar lambda(1)vertical bar >= ... >= vertical bar lambda(n)vertical bar, then (lim) over bar (k) c(A(k))(1/k) (resp., (lim) over bar (k) C(A(k))(1/k))equals 0 or vertical bar lambda(n)vertical bar (resp., vertical bar lambda(j)vertical bar for some j, 1 <= j <= n). For a normal A. more can be said, namely, (lim) over bar (k) c(A(k))(1/k) = vertical bar lambda(n)vertical bar (resp., (lim) over bar (k) C(A(k))(1/k) = vertical bar lambda(j)vertical bar for some j, 3 <= j <= n). In these cases, the above possible values can all be assumed by some A. (C) 2010 Elsevier Inc. All rights reserved.
Reproducible resistance switching of a relatively thin FeOx layer produced by oxidizing the surface of a FePt electrode in a metal-oxide-metal structure
(2010-12-30)
Feng, Li-Wei
;
Chang, Yao-Feng
;
Chang, Chun-Yen
;
Chang, Ting-Chang
;
Wang, Shin-Yuan
In this study, reproducible resistance switching effects were demonstrated on a relatively thin FeOx layer in the TiN/SiO2/FeOx/FePt structure produced by oxidizing the surface of a FePt electrode during a plasma-enhanced tetraethyl orthosilicate oxide deposition process. Characteristics of the non-stoichiometric FeOx transition layer were examined by Auger electron spectroscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy analyses. In addition, characteristics of the forming process as well as the current transport characteristics after forming process in the TiN/SiO2/FeOx/FePt structure were discussed. Moreover, the role of the silicon oxide layer was also experimentally demonstrated to act as an additional supplier of oxygen ions for the switching requirement by biasing high voltage bias conditions. (C) 2010 Elsevier B.V. All rights reserved.
Ab Initio Chemical Kinetics for SiH3 Reactions with SixH2x+2 (x=1-4)
(2010-12-30)
Raghunath, P.
;
Lin, M. C.
;
應用化學系分子科學碩博班
;
Institute of Molecular science
Gas-phase kinetics and mechanisms of SiH3 reactions with SiH4, Si2H6, Si3H8, and Si4H10, processes of relevance to a-Si thin-film deposition, have been investigated by ab initio molecular orbital and transition-state theory (TST) calculations. Geometric parameters of all the species involved in the title reactions were optimized by density functional theory at the B3LYP and BH&HLYP levels with the 6-311++G(3df,2p) basis set. The potential energy surface of each reaction was refined at the CCSD(T)/6-311++G(3df,2p) level of theory. The results show that the most favorable low energy pathways in the SiH3 reactions with these silanes occur by H abstraction, leading to the formation of SiH4 + SixH2x+1(silanyl) radicals. For both Si3H8 and n-Si4H10 reactions, the lowest energy barrier channels take place by secondary Si-H abstraction, yielding SiH4 + s-Si3H7 and SiH4 + s-Si4H9, respectively. In the i-Si4H10 reaction, tertiary Si-H abstraction, has the lowest barrier producing SiH4 + t-Si4H9. In addition, direct SiH3-for-X substitution reactions forming Si2H6 + X (X = H or silanyls) can also occur, but with significantly higher reaction barriers. A comparison of the SiH3 reactions with the analogous CH3 reactions with alkanes has been made. The rate constants for low-energy product channels have been calculated for the temperature range 300-2500 K by TST with Eckart tunneling corrections. These results, together with predicted heats of formation of various silanyl radicals and Si4H10 isomers, have been tabulated for modeling of a-Si:H film growth by chemical vapor deposition.
Fine Frequency-Modulation Trigger Features of Midbrain Auditory Neurons Extracted by the Progressive Thresholding Method - A Preliminary Study
(2010-12-31)
Chang, T. R.
;
Chiu, T. W.
;
Sun, X.
;
Poon, Paul W. F.
;
生物科技學系
Spectro-temporal receptive fields (STRFs) are commonly used to characterize response properties of central auditory neurons and for visualizing 'trigger features'. However, trigger features in STRF maps typically have a blurry appearance. Therefore it is unclear what details could be embedded in them. To investigate this, we developed a new method called 'progressive thresholding' to resolve fine structures in the STRFs, and applied the method to FM responses recorded from single units at the auditory midbrain of anesthetized rats. Random FM tones of a narrow frequency range (similar to 0.5 octave) were first presented to evoked spike responses at the cell's best frequency. Perispike modulating time waveforms collected (50 msec long, n = 1,500 to 4,000 tracings) were used to generate STRF based on spike-triggered-averaging. After supra-threshold areas of pixel counts had been determined through a step of progressive thresholding in the map, those pen-spike modulating waveforms passing through each area were dejittered systematically. At what seemed to be an optimal threshold, multiple trigger features (up to a maximum of 4 fine bands) were extracted from the initially simple-looking STRF. Results show that fine FM trigger features are present in STRFs and that they can be resolved with the present method of analysis.
SIMPLE AND EFFICIENT ONE POT SYNTHETIC PROTOCOL TO CONSTRUCT MORPHOLIN-2-ONES
(2010-12-31)
Yellol, Gorakh S.
;
Mohapatra, Debendra K.
;
Gurjar, Mukund K.
;
Sun, Chung-Ming
;
應用化學系
A new one pot synthetic method to construct 3-substituted morpholine-2-one derivatives is presented. Amino acids refluxed with 1,2-dibromoethane and potassium carbonate in acetonitrile followed by treatment with benzyl bromide in same pot furnished the 3-substituted N-benzyl-morpholine-2-ones in good yields. The simplicity of the reaction conditions and versatility of resulted scaffold to generate wide variety of molecules makes this method more attractive for synthetic organic chemists.
Estimating Achievable Capacity Index based on Multiple Samples
(2011-01-01)
Wang, Tsung-Yin
;
Liou, Cheng-Hwai
;
Su, Rung-Hung
;
Yang, Dong-Yuh
;
工業工程與管理學系
This paper investigates the profitability which measures for the newsboy-type product and develops a new index "Achievable Capacity Index", denoted by I-A. It can accurately measure the profitability of newsboy-type product with normally distributed demand. Furthermore, the interrelationship between profitability and I-A is also performed. An unbiased and effective estimator is derived to estimate I-A. Practically, market information regarding demand is obtained from multiple samples rather than single sample. Then we estimate I-A based on multiple samples. Finally, a numerical result is presented to show the probability density function of the unbiased estimator of (I) over cap (A) under different groups and sample sizes. (C) 2011 Published by Elsevier Ltd. Selection and/or peer-review under responsibility of the Asia Pacific Business Innovation and Technology Management Society
Novel approach towards the synthesis of skeletally diverse benzimidazole-pyrrolo[1,2-a]quinoxaline by SNAr/Pictet-Spengler reaction under focused microwave irradiation
(2011-01-01)
Maiti, Barnali
;
Sun, Chung-Ming
;
應用化學系
;
Department of Applied Chemistry
In a study aimed at developing a novel concise approach to the benzimidazole-pyrrolo-[1,2-a]quinoxaline core of medicinal interest, a Pictet-Spengler reaction has been identified that gives direct access to the target compound on soluble polymer support under focused microwave irradiation. The pyrrole moiety has been introduced on polymer immobilized benzimidazole derivatives by SNAr diversification which subsequently transformed to the title compounds via reduction followed by Pictet-Spengler cyclisation with various ketones in good yields and excellent purity. The work described here demonstrates the versatility of the base mediated SNAr reaction coupled with Pictet-Spengler cyclisation in the construction of novel heterocycles.
多媒體數位環境中科學概念建構之認知動態歷程：心智架構之表徵間聯結、轉換與整合
(2011)
佘曉清
;
SHE HSIAO-CHING
;
國立交通大學教育研究所
許多研究指出因科學概念的本質是微觀、抽象、動態的，而造成學生學習的困難。依據研究者過去的研究 (She, 2004a, 2004b)提出若提供給學生的的心智架構 (mental set)，若能針對概念本質的關鍵特質，則將可協助學生建構較完整的概念。而研究者認為有必要針對不同本質科學概念探討多重表徵對於心智模式的呈現的影響。學生是如何處理多重表徵訊息促進概念建構？學生究竟是如何經由所提供的最佳化心智架構之表徵間聯結、轉換、整合，進而建構概念？同時深入研究心智架構之表徵間聯結、轉換與整合的動態認知歷程與機制？除此之外，究竟在互動動態歷程中，學生如何相信該心智架構，進而形成自己的科學概念。是以未來三年的計畫將朝下列的方向進行研究。第一年：完成開發可以協助學生建構心智架構的多媒體學習內容和數位環境建置，協助學生建構科學概念。針對不同本質的科學概念的關鍵特質設計發展可協助學生建構概念之心智架構。深入探討多重表徵對不同本質科學概念之心智架構建立的訊息處理模式與學習成效。第二年：正式運用已發展完成之一系列心智架構搭配多重表徵方式呈現的數位學習內容，正式用於國高中理化、生物學習，藉以找出最佳化多重表徵呈現的心智架構。更進一步用於學生的學習，同時輔以眼動儀探討最佳化心智架構之表徵間聯結、轉換、整合的動態認知歷程對不同本質科學概念的影響，期望深入理解其機制。第三年：深入探討何以有些學生能夠經由最佳化心智架構學習模組，進而建構完整的科學概念，而有些不能。期望運用眼動儀探討其心智架構之表徵間聯結、轉換、連結動態認知歷程，得以瞭解其機制。除此之外，將深入探討學生科學概念的建構與學生信念之間的關係。相信此研究的結果，可以提供不同本質科學概念之心智架構在多重表徵組合下的訊息處理模式，與心智架構的表徵間之表徵互動、轉換、整合認知動態歷程，信念與科學概念的關係等。使我們對於科學概念建構的動態認知歷程與機制能有深入的理解，更有助於未來科學教學該如何針對不同本質科學概念提供學生最佳化的心智架構，促進科學學習。
Detecting Stability Faults in Sub-threshold SRAMs
(2011)
Lin, Chen-Wei
;
Yang, Hao-Yu
;
Huang, Chin-Yuan
;
Chen, Hung-Hsin
;
Chao, Mango C. -T.
Detecting stability faults has been a crucial task and a hot research topic for the testing of conventional super-threshold 6T SRAM in the past. When lowering the supply voltage of SRAM to the subthreshold region, the impact of stability faults may significantly change, and hence the test methods developed in the past for detecting stability faults may no longer be effective. In this paper, we first categorize the subthreshold-SRAM designs into different types according to their bit-cell structures. Based on each type, we then analyze the difference of its stability faults compared to the conventional super-threshold 6T SRAM, and discuss how the stability-fault test methods should be modified accordingly. A series of experiments are conducted to validate the effectiveness of each stability-fault test method for different types of subthreshold-SRAM designs.
Synthesis, characterization, and photovoltaic properties of a low-bandgap copolymer based on 2,1,3-benzooxadiazole
(2011-01-01)
Jiang, Jian-Ming
;
Yang, Po-An
;
Chen, Hsiu-Cheng
;
Wei, Kung-Hwa
;
材料科學與工程學系
PBDTBO, a conjugated polymer comprising benzo[1,2-b:4,5-b']dithiophene (BDT) and 5,6-bis(octyloxy) benzo[c][1,2,5]-oxadiazole (BO) units, exhibits a deep HOMO energy level of -5.27 eV and excellent solubility. A device incorporating PBDTBO and [6,6]-phenyl-C(61)-butyric acid methyl ester (1 : 1, w/w) exhibited a power conversion efficiency of 5.7%.
領域、論辯立場與論辯方式對知識探究技能與科學認識論的影響（II）
(2011)
洪瑞雲
;
HORNG RUEY-YUN
;
國立交通大學工業工程與管理學系（所）
本研究的目的在將去年對科學知識探索技能的研究延伸至科技領域，探討論辯方式（個人、兩人）、論辯立場（正方、反方）對科技知識的探索技能與認識論的影響。科技知識是應用基礎科學的發現來創造出有用的工具。科技知識的建構有賴科技思考技能的運用與對科技知識本質的認識。科技認識論的核心在於瞭解科技是人建構出來的，不是最終的真理，也不是唯一的解。科技知識須有合理的理論解釋與證據。科技學者透過論辯相互詰問，無法被證偽的知識才會被保留下來，論辯因此是科技思考的核心技能。研究中136位大學生被隨機指派至論辯方式（個人、兩人）X論辯立場（正方、反方）的4個情境中對一科技議題進行論辯練習，再以另一科技議題檢測論辯練習的效果。參與者在後測的論辯表現與無論辯練習的控制組比較後發現，雙人正方論辯的練習可提升參與者論辯時的整體反應量與評論量，主要是他們可發現較多議題中證據與論證邏輯的缺失。雙人反方的表現與雙人正方組接近，但有最高的駁斥反應；單人正方則僅在全部證據量上表現較佳，單人反方表現雖比單人正方略佳，但差異不顯著。這些發現與前一年在科學領域的發現不同，顯示人在處理科學與科技議題時知識探索的重點有差異。
探討以資訊科技為基礎之網絡組織關係品質、敏捷性與知識分享對組織績效之影響
(2011)
楊千
;
YANG CHYAN
;
國立交通大學經營管理研究所
愈來愈多研究顯示企業網絡組織的影響在過去幾年來已經是重要的研究課題。企業受到外部環境的壓力，往往需要縮短產品研發或製造時間，提早上市。如果只有企業本身的努力，沒有供應商配合，結果會影響產品開發的成效。因此，在組織關係品質的影響之下，良好的關係品質可以提升企業間合作的基礎，並且促進企業溝通與發展。另外，在這樣的緊密關係結合，也可縮短研發或生產時間，並且在資訊科技的輔助之下進行知識分享。當企業可以達到上述的目標時，通常可以提升營運績效。由於企業在面臨快速變遷的營運環境和競爭者的挑戰，如何藉由上述的觀點結合敏捷性來調整企業步伐，也是當今研究的另一個重點課題。國內對於上述議題的研究付之闕如，MIS Quarterly 在2009 年的call for paper 也呼應本研究之研究課題，就是與供應商之間的網絡組織如何達到合作與快速調整企業經營模式。本研究的目的在於瞭解國內企業與供應商之間如何藉由資訊科技的輔助進行上述活動，改善營運體質，縮短產品上市時間以爭取競爭優勢。藉由本研究的調查分析，可以提出相關的研究成果供學術界與實務界參考。
Impact of Negative-Bias-Temperature-Instability on Channel Bulk of Polysilicon TFT by Gated PIN Diode Analysis
(2011)
Huang, Chen-Shuo
;
Liu, Po-Tsun
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光電工程學系
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顯示科技研究所
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Department of Photonics
In this study, negative-bias-temperature-instability (NBTI) stress induced interface, and bulk states of polycrystalline silicon (poly-Si) film were identified by using gated poly-Si P-intrinsic-N (PIN) diodes. The generation of reverse current was proportional to the quantity of defects in the poly-Si of the gated diode device. Experimental results revealed NBTI degradation has a spatial distribution in the poly-Si film and demonstrated that the resultant generation of poly-Si bulk states causes the elevated drain leakage current of thin-film transistors (TFTs). We conclude that grain boundaries, with enriched hydrogenated silicon bonds in the bulk of poly-Si, interact electrochemically with hole-carriers. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3551463] All rights reserved.