Browsing by Issue Date, starting with "2011-01-16"

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分心腦波量測分析方法及其應用系統
(2011-01-16)
林進燈
;
柯立偉
;
陳世安
;
邱添丁
;
王俞凱
本發明提供一種分心腦波量測分析方法及其應用系統，其係透過腦波量測與分析系統取得車輛駕駛者的數個腦波訊號，再使用主成分分析法(PCA)、獨立成分分析法(ICA)與傅立葉轉換對數個腦波訊號進行演算分析，以獲得一腦波誘發電位與/或觀測事件相關頻譜擾動(ERSP)圖表，分析腦波誘發電位與/或觀測事件相關頻譜擾動圖表是否有能量改變，如果是，則表示受測者正處於分心狀態，則由回饋系統提醒受測者，以避免受測者因分心所可能產生的反應延遲；以及如果否，則表示受測者無分心，繼續受測者的腦波量測與分析。
自我對準薄膜電晶體之製造方法及其結構
(2011-01-16)
周政偉
;
冉曉雯
;
蔡娟娟
一種自我對準薄膜電晶體之製造方法，首先提供具有相對的第一面與第二面之透明基板，並且依序沉積一氧化物閘極、介電層、及光阻層於透明基板的第一面上。接著，對基板的第二面照射紫外光，以對光阻層進行曝光，其中以氧化物閘極製成的閘極係做為光罩，並吸收照射至對應於氧化物閘極之光阻層的紫外光。接著移除曝光之光阻層，並沉積一透明導電層於未曝光之光阻層及介電層上。對透明導電層執行圖案化製程，以形成源極與汲極，並形成主動層覆蓋於源極、汲極、及介電層上，以完成一自我對準薄膜電晶體結構。
應用於大眾運輸系統中的網路連結建立方法
(2011-01-16)
曾建超
;
李勇昇
;
張又仁
;
陳世揚
揭露一種應用於大眾運輸系統中的網路連結建立實施方法範例。預先建立一主代理器與一大眾運輸載具間之一第一通道。預先建立該主代理器與一拜訪代理器間之一第二通道。在該主代理器的協助下，該拜訪代理器預先授權給該大眾運輸載具，並分配該大眾運輸載具可用的一網路資源。在該主代理器的協助下，該大眾運輸載具預先得知該拜訪代理器所配置的該網路資源，而且，該大眾運輸載具預先完成對該拜訪代理器的一連結設定。當該大眾運輸載具移入一拜訪網路時，依預先完成的該連結設定，該大眾運輸載具與該拜訪代理器間建立網路連線。
通訊系統接收器及其解碼方法
(2011-01-16)
黃崇榮
;
宋志晟
;
李大嵩
針對K-Best演算法的缺失，提出一個適用於大型積體電路架構的高效率球型K-best解碼器。透過複數平面星座圖的規律特性來簡化星座點之搜尋，以及提出一高速平行比較之架構，省卻大量的資料排序動作及節點的運算量，藉以提供一高效率，低功率消耗且具有固定吞吐量的K-best解碼器。更進一步地，透過結合部份最大可能決策器與所提出的高效率搜尋演算法，使得在相同的環境及K值下，該系統能提供接近於最大可能搜尋之性能，且較傳統的K-Best接收機有更低的運算量。
包括奈米鑽石的載體及其製備的方法和用途
(2011-01-16)
趙瑞益
;
陳清漂
;
鄭嘉良
本發明提供一種包含奈米鑽石(ND)顆粒以及連接子的載體，其中，該奈米鑽石和該連接子係彼此共價鍵結，且該連接子係如式-R1-O(R2)m-Q-所示。此外，本發明進一步提供具有活性單元以共價鍵結的方式與該連接子結合的載體，其中，該活性單元為藥物、維生素或生物分子。
照護裝置
(2011-01-16)
蕭子健
;
林錫慶
;
林筱涵
;
趙志峰
本發明係提供一種照護裝置，其主要係利用訊號擷取模組感測人體的生理反應以產生訊號資料，接著，由具有運算判斷規則單元之處理模組將該訊號資料進行篩選與分析以降低該訊號資料之複雜度，並持續透過該運算判斷規則單元訓練及產生相應之特徵資訊，之後，再將該處理模組所產生之該特徵資訊傳送至照護平台，使照護平台能即時監視被照護者的狀態，並且可做為被照護者與他人溝通的重要背景資訊。藉此，透過本發明之照護裝置可過濾及消除非必要的資料或雜訊，並擷取對應該訊號資料之特徵資訊，俾有效縮減資料量。
角度量測陀螺儀系統及角度估算方法
(2011-01-16)
陳宗麟
;
紀建宇
一種角度量測陀螺儀系統，包含一包括一質量塊的陀螺儀、一感測模組，及一包括一狀態觀察器與一角度計算器的計算模組。該感測模組根據該質量塊的移動產生一組感測信號。該狀態觀察器根據一組估計參數計算一組估計信號，並得到一增益，且根據該陀螺儀的動態方程式、該增益、該組感測信號及該組估計信號更新該組估計參數。該組估計參數與包括該質量塊的位置與速度、該感測模組的感測誤差，及該陀螺儀的轉動角速度之一組系統參數對應。該角度計算器根據該組估計參數中對應位置與速度的參數，及該陀螺儀的剛性係數，計算該陀螺儀的轉動角度。
Constant voltage stress induced charge trapping and detrapping characteristics of the Si3N4 uniaxial strained n-channel metal-oxide-semiconductor field-effect-transistor with fluorinated HfO2/SiON gate stack
(2011-01-17)
Chen, Yung-Yu
;
Hsieh, Chih-Ren
;
Chiu, Fang-Yu
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Charge trapping and detrapping characteristics of Si3N4 contact etch stop layer (SiN CESL) uniaxial strained n-channel metal-oxide-semiconductor field-effect-transistor (nMOSFET) with fluorinated HfO2/SiON gate stack have been investigated for the first time. Smaller threshold voltage shift can consequently obtain for the SiN CESL strained nMOSFET with fluorinated HfO2/SiON gate stack, primarily due to passivation of oxygen vacancies and dangling bonds by either nitrogen or fluorine atoms. However, the SiN CESL strained nMOSFET with fluorinated gate stack inevitably exhibits less charge detrapping ratio, which means greater part of stress-induced charges would remain in the gate stack after nitrogen or fluorine incorporation, respectively. (c) 2011 American Institute of Physics. [doi:10.1063/1.3541878]
Constant voltage stress induced charge trapping and detrapping characteristics of the Si(3)N(4) uniaxial strained n-channel metal-oxide-semiconductor field-effect-transistor with fluorinated HfO(2)/SiON gate stack
(2011-01-17)
Chen, Yung-Yu
;
Hsieh, Chih-Ren
;
Chiu, Fang-Yu
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Charge trapping and detrapping characteristics of Si(3)N(4) contact etch stop layer (SiN CESL) uniaxial strained n-channel metal-oxide-semiconductor field-effect-transistor (nMOSFET) with fluorinated HfO(2)/SiON gate stack have been investigated for the first time. Smaller threshold voltage shift can consequently obtain for the SiN CESL strained nMOSFET with fluorinated HfO(2)/SiON gate stack, primarily due to passivation of oxygen vacancies and dangling bonds by either nitrogen or fluorine atoms. However, the SiN CESL strained nMOSFET with fluorinated gate stack inevitably exhibits less charge detrapping ratio, which means greater part of stress-induced charges would remain in the gate stack after nitrogen or fluorine incorporation, respectively. (c) 2011 American Institute of Physics. [doi:10.1063/1.3541878]
Accelerated quark and holography for confining gauge theory
(2011-01-18)
Ghoroku, Kazuo
;
Ishihara, Masafumi
;
Kubo, Kouki
;
Taminato, Tomoki
;
電子物理學系
We show a constantly accelerated quark as a string solution of the Nambu-Goto action, which is embedded in the bulk background dual to the N = 2 supersymmetric confining Yang-Mills theory. The induced metric of the world sheet for this string solution has an event horizon specified by the fifth coordinate. By an extended Rindler transformation proposed by Xiao, we move to the comoving frame of the accelerated quark string. Then we find that this horizon is transferred to the event horizon of the bulk and the causal part of the accelerated quark is transformed to a static free quark in the Rindler coordinate. As a result, the confinement of the Minkowski vacuum is lost in the Rindler vacuum. This point is assured also by studying the potential between the quark and antiquark. However, the remnants of the original confining force are seen in various thermal quantities. We also discuss the consistency of our results and the claim that the Green's functions will not be changed by the Rindler transformation.
First-principles calculations of engineered surface spin structures
(2011-01-18)
Lin, Chiung-Yuan
;
Jones, B. A.
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
The engineered spin structures recently built and measured in scanning tunneling microscope experiments are calculated using density functional theory. By determining the precise local structure around the surface impurities, we find that the Mn atoms can form molecular structures with the binding surface, behaving like surface molecular magnets. The spin structures are confirmed to be antiferromagnetic, and the exchange couplings are calculated within 8% of the experimental values simply by collinear-spin generalized gradient approximation +U calculations. We can also explain why the exchange couplings significantly change with different impurity binding sites from the determined local structure. The bond polarity is studied by calculating the atomic charges with and without the Mn adatoms. In addition, we study a second adatom, Co. We study the surface Kondo effect of Co by calculating the surrounding local density of states and the on-site Coulomb U and compare and contrast the behavior of Co and Mn. Finally, our calculations confirm that the Mn and Co spins of these structures are 5/2 and 3/2, respectively, as also measured indirectly by scanning tunneling microscope.
Heterogeneous and Homogeneous Nucleation of Epitaxial NiSi(2) in [110] Si Nanowires
(2011-01-20)
Chou, Yi-Chia
;
Wu, Wen-Wei
;
Lee, Chung-Yang
;
Liu, Chun-Yi
;
Chen, Lih-Juann
We report here both heterogeneous and homogeneous nucleation of epitaxial suicide of NiSi(2) in Si nanowires grown in [110] direction by in situ observation in high-resolution transmission electron microscopy (TEM). Owing to the excellent lattice match between Si and NiSi(2), a giant epitaxial step of 2-8 nm wide forms at the interface between Si and NiSi(2) during the growth of the latter. The step formation results in two suicide/Si interfaces parallel to each other in TEM observations. Heterogeneous nucleation of NiSi(2) occurs at the intersection where the step meets the interfaces. However, we have also observed the epitaxial growth of NiSi(2) having a single interface with the Si, i.e., without a giant step. Homogeneous nucleation of NiSi(2) occurs on the single interface. Incubation time of heterogeneous nucleation of NiSi(2) has been measured by high-resolution video to be much shorter than that of homogeneous nucleation. The overall growth rate of NiSi(2) for the case of heterogeneous nucleation is faster than that for the case of homogeneous nucleation. Kinetic analysis of both types of nucleation is presented for a direct comparison in order to have a better understanding of the nucleation events.
Heterogeneous and Homogeneous Nucleation of Epitaxial NiSi2 in [110] Si Nanowires
(2011-01-20)
Chou, Yi-Chia
;
Wu, Wen-Wei
;
Lee, Chung-Yang
;
Liu, Chun-Yi
;
Chen, Lih-Juann
We report here both heterogeneous and homogeneous nucleation of epitaxial suicide of NiSi2 in Si nanowires grown in [110] direction by in situ observation in high-resolution transmission electron microscopy (TEM). Owing to the excellent lattice match between Si and NiSi2, a giant epitaxial step of 2-8 nm wide forms at the interface between Si and NiSi2 during the growth of the latter. The step formation results in two suicide/Si interfaces parallel to each other in TEM observations. Heterogeneous nucleation of NiSi2 occurs at the intersection where the step meets the interfaces. However, we have also observed the epitaxial growth of NiSi2 having a single interface with the Si, i.e., without a giant step. Homogeneous nucleation of NiSi2 occurs on the single interface. Incubation time of heterogeneous nucleation of NiSi2 has been measured by high-resolution video to be much shorter than that of homogeneous nucleation. The overall growth rate of NiSi2 for the case of heterogeneous nucleation is faster than that for the case of homogeneous nucleation. Kinetic analysis of both types of nucleation is presented for a direct comparison in order to have a better understanding of the nucleation events.
自己整合薄膜トランジスタの製造方法とその構造体
(2011-01-20)
周政偉
;
冉暁▲ブン▼
;
蔡娟娟
【課題】自己整合薄膜トランジスタ（ＴＦＴ）の製造方法を提供する。【解決手段】先ず、透明基板の第１表面上に酸化物ゲート、誘電体層、及びフォトレジスト層を順に堆積する。次に、該透明基板の第１表面と反対側の第２表面に紫外光を照射することで、該フォトレジスト層を露光する。この時、該酸化物ゲートからなるゲートはマスクとして働き、該フォトレジスト層の該酸化物ゲートに対応する部分に照射される紫外光を吸収する。次に、該露光されたフォトレジスト層を除去し、該フォトレジスト層の未露光部分と該誘電体層との上に透明導電層を堆積する。次に、該透明導電層にパターン形成プロセスを実行して、ソースとドレインとを形成し、ソース、ドレイン、及び誘電体層を覆うようアクティブ層を形成して、自己整合ＴＦＴ構造体が完成する。【選択図】図１
Drug Delivery Nanodevice, its Preparation Method and Uses Thereof
(2011-01-20)
Chen, San-Yuan
;
Hu, Shang-Hsiu
;
Liu, Dean-Mo
;
Kuo, Kun-Ting
Nanodevice and method for in vivo monitoring and release of drugs are provided. The disclosed nanodevice is characterized in having a drug-loaded nanosphere that is capable of releasing the encapsulated drugs upon magnetically stimulation. The nanodevice may also be used as a contrast agent for in vivo imaging and monitoring the concentration and distribution of the released drugs and/or active compounds injected separately into a target site of a subject.
Direct spectroscopic evidence of charge reversal at the Pb(Zr(0.2)Ti(0.8))O(3)/La(0.7)Sr(0.3)MnO(3) heterointerface
(2011-01-21)
Wu, Chung-Lin
;
Lee, Pei-Wei
;
Chen, Yi-Chun
;
Chang, Lo-Yueh
;
Chen, Chia-Hao
At the heterointerface of a top ferroelectric Pb(Zr(0.2)Ti(0.8))O(3) (PZT) ultrathin film and a bottom La(0.7)Sr(0.3)MnO(3) (LSMO) electrode, we used continuous synchrotron-radiation photoelectron spectroscopy to probe in situ and demonstrated that the interfacial charges are reversible and their affected valence-band barrier height becomes modulated upon switching the polarization in the top layer. By monitoring the core-level shifting of the buried LSMO layer under continuous illumination of synchrotron radiation, we directly observed a temporal screening of polarization induced by the photon-generated carriers in the top PZT layer. This dynamic characterization of the core-level shifting of the buried layer demonstrates an effective method to probe the electric conduction and ferroelectric polarization of an ultrathin ferroelectric oxide thin film.
Direct spectroscopic evidence of charge reversal at the Pb(Zr0.2Ti0.8)O-3/La0.7Sr0.3MnO3 heterointerface
(2011-01-21)
Wu, Chung-Lin
;
Lee, Pei-Wei
;
Chen, Yi-Chun
;
Chang, Lo-Yueh
;
Chen, Chia-Hao
At the heterointerface of a top ferroelectric Pb(Zr0.2Ti0.8)O-3 (PZT) ultrathin film and a bottom La0.7Sr0.3MnO3 (LSMO) electrode, we used continuous synchrotron-radiation photoelectron spectroscopy to probe in situ and demonstrated that the interfacial charges are reversible and their affected valence-band barrier height becomes modulated upon switching the polarization in the top layer. By monitoring the core-level shifting of the buried LSMO layer under continuous illumination of synchrotron radiation, we directly observed a temporal screening of polarization induced by the photon-generated carriers in the top PZT layer. This dynamic characterization of the core-level shifting of the buried layer demonstrates an effective method to probe the electric conduction and ferroelectric polarization of an ultrathin ferroelectric oxide thin film.
Solute-solvent intermolecular vibronic coupling as manifested by the molecular near-field effect in resonance hyper-Raman scattering
(2011-01-21)
Shimada, Rintaro
;
Hamaguchi, Hiro-o
;
應用化學系
;
應用化學系分子科學碩博班
;
Department of Applied Chemistry
Vibronic coupling within the excited electronic manifold of the solute all-trans-beta-carotene through the vibrational motions of the solvent cyclohexane is shown to manifest as the "molecular near-field effect," in which the solvent hyper-Raman bands are subject to marked intensity enhancements under the presence of all-trans-beta-carotene. The resonance hyper-Raman excitation profiles of the enhanced solvent bands exhibit similar peaks to those of the solute bands in the wavenumber region of 21 700-25 000 cm(-1) (10 850-12 500 cm(-1) in the hyper-Raman exciting wavenumber), where the solute all-trans-beta-carotene shows a strong absorption assigned to the 1A(g) -> 1B(u) transition. This fact indicates that the solvent hyper-Raman bands gain their intensities through resonances with the electronic states of the solute. The observed excitation profiles are quantitatively analyzed and are successfully accounted for by an extended vibronic theory of resonance hyper-Raman scattering that incorporates the vibronic coupling within the excited electronic manifold of all-trans-beta-carotene through the vibrational motions of cyclohexane. It is shown that the major resonance arises from the B-term (vibronic) coupling between the first excited vibrational level (v = 1) of the 1B(u) state and the ground vibrational level (v = 0) of a nearby A(g) state through ungerade vibrational modes of both the solute and the solvent molecules. The inversion symmetry of the solute all-trans-beta-carotene is preserved, suggesting the weak perturbative nature of the solute-solvent interaction in the molecular near-field effect. The present study introduces a new concept, " intermolecular vibronic coupling," which may provide an experimentally accessible/theoretically tractable model for understanding weak solute-solvent interactions in liquid. (C) 2011 American Institute of Physics. [doi:10.1063/1.3512923]
空時編碼／正交分頻多工系統中合併通道估計與資料偵測方法
(2011-01-21)
古孟霖
;
黃家齊
本發明係以最佳化方法合併通道估計及資料偵測，利用資料子載波與稀疏領航子載波追蹤通道變化；其特徵在於使用牛頓法及資料子載波達到合併通道估計及資料偵測之最佳化，並利用稀疏領航子載波所形成之最大相似函數之一階部分微分方向向量做為通道估計器追蹤通道變化之初始參考方向以得到更好的通道估計。本發明在高車行速度及大通道延遲環境下具有良好系統效能表現。
交大e-News第087期
(2011-01-21)
Secretariat
;
國立交通大學秘書室