Browsing by Issue Date, starting with "2011-08-11"
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Item type:Item, 光纖光柵感測器(2011-08-11) ;黃安斌高聖傑一種光纖光柵感測器,其包括:一圓形彈性薄板;及一或二個光纖光柵,設於圓形彈性薄板底面,且其兩端與傳輸訊號的一光纖連接。本發明之光纖光柵感測器的讀數不受溫度變化影響,可應用之產品包括:大面積或大量使用之分佈式應力計、拉力計、壓力計及位移計。Item type:Item, SOLAR POWER MANAGEMENT SYSTEM(2011-08-11) ;WU CHUN-YI ;HSIEH WEI-CHIHHWANG WEIA solar power management system is provided for managing electric energy conversion by a photovoltaic cell module, supplying the converted electric energy to an external load, and storing the converted electric energy in a battery. The solar power management system comprises a multiphase maximum power tracking (MPT) module, a charging circuit, and a voltage conversion module. The multiphase MPT module regulates output current of the photovoltaic cell module to output maximum power within the high limit thereof and obtain improved solar energy conversion efficiency. The voltage conversion module converts the electric energy generated by the photovoltaic cell module into different voltage formats, such as 5.6V DC, 1.0V DC, 0.6˜0.3V DC low voltage, or −1.2V DC negative voltage, to meet different external load requirements. The solar power management system has simple circuitry and can be configured as a system on chip (SoC) at reduced cost while provides very wide applications.Item type:Item, Microencapsulated liquid device and method for making the same(2011-08-11) ;Fan Shih-Kang ;Chiu Cheng-PuHsu Ching-HsiangA microencapsulated liquid device includes: a substrate; a droplet liquid disposed on the substrate; a protecting layer covering the droplet liquid, the protecting layer being made from an encapsulating liquid that is immiscible with the droplet liquid, that has a surface energy lower than that of the droplet liquid, and that is solidified to form the protecting layer; and a cover plate covering the protecting layer. A method for making the microencapsulated liquid device is also disclosed.Item type:Item, Orientation-Dependent Room-Temperature Ferromagnetism of FeSi Nanowires and Applications in Nonvolatile Memory Devices(2011-08-11) ;Hung, Shih-Wei ;Wang, Terry Tai-Jui ;Chu, Li-Wei ;Chen, Lih-Juann材料科學與工程學系Self-catalyzed growth of FeSi nanowires has been achieved via a spontaneous chemical reaction method. The room-temperature ferromagnetism behavior compared to that of bulk FeSi at 4 K is attributed to the enhancement of magnetic coupling behavior correlated to different crystalline orientations. The resistivity of the single-stem FeSi nanowire was determined to be 2650 mu Omega.cm. The fabricated memory devices based on FeSi nanowires showed significant C-V hysteresis, exhibiting the memory effect. The strong memory effect can be accounted for by the presence of defects or dangling bonds on the surface of the FeSi nanowires embedded in the SiO(2) layer, which enhances the trapping density for nonvolatile memory applications.Item type:Item, DYNAMIC RECONFIGURABLE HETEROGENEOUS PROCESSOR ARCHITECTURE WITH LOAD BALANCING AND DYNAMIC ALLOCATION METHOD THEREOF(2011-08-11) ;CHUNG Chung-Ping ;Yang Hui-ChinChen Yi-ChiA dynamic reconfigurable heterogeneous processor architecture with load balancing and dynamic allocation method thereof is disclosed. The present invention uses a work control logic unit to detect load imbalance between different types of processors, and employs a number of dynamically reconfigurable heterogeneous processors to offload the heavier loaded processors. Hardware utilization of such design can be enhanced, and variation in computation needs among different computation phases can be better handled. To design the dynamic reconfigurable heterogeneous processors, a method of how to choose the basic building blocks and place the routing components is included. With the present invention, performance can be maximized at a minimal hardware cost. Hence the dynamic reconfigurable heterogeneous processor(s) so constructed and the load balancing and dynamic allocation method together will have the best performance at least cost.Item type:Item, ABDOMINAL BREATHING TRAINING APPARATUS, ABDOMINAL BREATHING TRAINING SYSTEM AND METHOD THEREOF(2011-08-11) ;Hsiao Tzu-Chien ;Hsu Ru-ShinHsieh Dai-LingAn abdominal breathing training apparatus, an abdominal breathing training system and the method thereof are provided. The abdominal breathing training apparatus is adapted for training a trainee how to perform an abdominal breathing and includes a trainer unit, a sensor unit, a data acquisition and conversion unit and a display unit. The trainer unit generates training waveforms and indications. The sensor unit directly measures abdominal movement signals from the trainee, and is positioned adjacent to the abdominal portion of the trainee. The data acquisition and conversion unit is coupled to the sensor unit and generates a trainee abdominal movement waveform according to the measured abdominal movement signals of the trainee. The display unit is coupled to the trainer unit, and displays the training waveforms and the indications to the trainee, who follows the training waveforms on the display unit to perform the abdominal breathing.Item type:Item, Drawn k-in-a-row games(2011-08-12) ;Chiang, Sheng-Hao ;Wu, I-Chen ;Lin, Ping-Hung ;資訊工程學系Department of Computer ScienceWu and Huang (2005) [12] and Wu et al. (2006) [13] presented a generalized family of k-in-a-row games, called Connect(m, n, k, p, q). Two players, Black and White, alternately place p stones on an m x n board in each turn. Black plays first, and places q stones initially. The player who first gets k consecutive stones of his/her own horizontally, vertically, or diagonally wins. Both tie the game when the board is filled up with neither player winning. A Connect(m, n, k, p, q) game is drawn if neither has any winning strategy. Given p, this paper derives the value k(draw)(p), such that Connect(m, n, k, p, q) games are drawn for all k >= k(draw)(p), m >= 1, n >= 1, 0 <= q <= p, as follows. (1) k(draw)(p) = 11. (2) For all p >= 3, k(draw)(p) = 3p + 3d - 1, where d is a logarithmic function of p. So, the ratio k(draw)(P)/P is approximately 3 for sufficiently large p. The first result was derived with the help of a program. To our knowledge, our k(draw)(p) values are currently the smallest for all 2 <= p <= 1000. (C) 2011 Elsevier B.V. All rights reserved.Item type:Item, Tight complexity analysis of the relocation problem with arbitrary release dates(2011-08-12) ;Sevastyanov, Sergey V. ;Lin, Bertrand M. T. ;Huang, Hsiao-Lan ;資訊管理與財務金融系 註:原資管所+財金所Department of Information Management and FinanceThe paper considers makespan minimization on a single machine subject to release dates in the relocation problem, originated from a resource-constrained redevelopment project in Boston. Any job consumes a certain amount of resource from a common pool at the start of its processing and returns to the pool another amount of resource at its completion. In this sense, the type of our resource constraints extends the well-known constraints on resumable resources, where the above two amounts of resource are equal for each job. In this paper, we undertake the first complexity analysis of this problem in the case of arbitrary release dates. We develop an algorithm, based on a multi-parametric dynamic programming technique (when the number of parameters that undergo enumeration of their values in the DP-procedure can be arbitrarily large). It is shown that the algorithm runs in pseudo-polynomial time when the number m of distinct release dates is bounded by a constant. This result is shown to be tight: (1) it cannot be extended to the case when m is part of the input, since in this case the problem becomes strongly NP-hard, and (2) it cannot be strengthened up to designing a polynomial time algorithm for any constant m > 1, since the problem remains NP-hard for m = 2. A polynomial-time algorithm is designed for the special case where the overall contribution of each job to the resource pool is nonnegative. As a counterpart of this result, the case where the contributions of all jobs are negative is shown to be strongly NP-hard. (C) 2011 Elsevier B.V. All rights reserved.Item type:Item, One-to-one disjoint path covers on k-ary n-cubes(2011-08-12) ;Shih, Yuan-Kang ;Kao, Shin-Shin ;資訊工程學系Department of Computer ScienceThe k-ary n-cube, Q(n)(k) is one of the most popular interconnection networks. Let n >= 2 and k >= 3. It is known that Q(n)(k) is a nonbipartite (resp. bipartite) graph when k is odd (resp. even). In this paper, we prove that there exist r vertex disjoint paths {P(i) vertical bar 0 <= i <= r - 1} between any two distinct vertices u and v of Q(n)(k) when k is odd, and there exist r vertex disjoint paths {R(i) vertical bar 0 <= i <= r - 1} between any pair of vertices to and b from different partite sets of Q(n)(k) when k is even, such that boolean OR(r-1)(i=0) P(i) or boolean OR(r-1)(i=0) R(i) covers all vertices of Q(n)(k) for 1 <= r <= 2n. In other words, we construct the one-to-one r-disjoint path cover of Q(n)(k) for any r with 1 <= r <= 2n. The result is optimal since any vertex in Q(n)(k) has exactly 2n neighbors. (C) 2011 Elsevier B.V. All rights reserved.Item type:Item, Logarithmic temperature dependence of Hall transport in granular metals(2011-08-12) ;Zhang, Yu-Jie ;Li, Zhi-Qing ;Lin, Juhn-Jong ;電子物理學系物理研究所We have measured the Hall coefficient R-H and the electrical conductivity sigma of a series of ultrathin indium-tin-oxide films between 2 and 300 K. A robust R-H proportional to ln T law is observed in a considerably wide temperature range of 2 and similar to 120 K. This ln T dependence is explained as originating from the electron-electron interaction effect in the presence of granularity as theoretically predicted. Furthermore, we observed sigma proportional to ln T law from 3 K up to several tens K, which also arose from the Coulomb interaction effect in inhomogeneous systems. These results provide strong experimental support for the current theoretical concepts for charge transport in granular metals with intergrain tunneling conductivity g(T) >> 1.Item type:Item, Preparation of organic/inorganic hybrid nanocomposites by ultraviolet irradiation and their packaging applications for organic optoelectronic devices(2011-08-15) ;Chung, Ming-Hua ;Lin, Jian-Shian ;Hsieh, Tsung-Eong ;Chen, Nien-PoJuang, Fuh-ShyangBy ultraviolet (UV)-assisted synthetic procedure, we have successfully prepared several UV curable organic/inorganic hybrid nanocomposites with excellent gas barrier capabilities, moderate hardness, and good adhesive strength. The experimental results reveal that the physical properties of nanocomposites depend on their chemical structures. Therefore, introduction of silicone and polyurethane (PU) into the Acrylics backbone dramatically raises the adhesive strength as well as refractive index and lowers the gas penetration. Furthermore, we have also applied lab-made nanocomposite g for the encapsulation of organic optoelectronic devices such as OLEDs, flexible OLEDs, and organic solar cells. With the package of lab-made nanocomposite g, the organic optoelectronic devices effectively resist the entry of moisture and oxygen in the air, extending the lifetimes. (C) 2011 Elsevier B.V. All rights reserved.Item type:Item, One-dimensional photonic crystal nanobeam lasers on a flexible substrate(2011-08-15) ;Lu, Tsan-Wen ;Chiu, Li-Hsun ;Lin, Pin-Tso ;Lee, Po-Tsung光電工程學系We demonstrate a one-dimensional (1D) photonic crystal (PhC) nanocavity laser composed of hybrid PhC mirrors on a suspended nanobeam (NB) with very small device footprint of 8.5 x 0.57 mu m(2). The 0th-order mode lasing action with low threshold of 280 mu W is observed. Via the optical glue stamping process, the devices are directly transferred onto a flexible polypropylene substrate. Single mode lasing action with effective threshold of 17 mu W is achieved. The robust lasing properties of the device with different bending radii R from infinity to 2.5 mm are obtained. Via finite-element method, we also theoretically address that the lasing wavelength is almost invariant when R> 1.0 mm. This flexible 1D PhC NB laser will be a good candidate for efficient nanolaser in future flexible photonic integrated circuits with ultrahigh component density. (C) 2011 American Institute of Physics. [doi:10.1063/1.3626592]Item type:Item, Effects of GaAsSb capping layer thickness on the optical properties of InAs quantum dots(2011-08-15) ;Hsu, Wei-Ting ;Liao, Yu-An ;Hsu, Feng-Chang ;Chiu, Pei-ChinChyi, Jen-InnThe optical properties of GaAsSb-capped InAs quantum dots (QDs) with different capping layer thickness are investigated. Both the emission energy and the recombination lifetime are found to be correlated with the capping layer thicknesses. Theoretical calculations indicate that the quantum confinement and the wave function distribution of hole states are sensitive to the GaAsSb capping layer thickness. The Sb induced change in QD size also plays a role in the optical properties of GaAsSb-capped QDs. Controlling the GaAsSb capping layer thickness is a feasible way to tailor the InAs QDs for long-wavelength applications. (C) 2011 American Institute of Physics. [doi:10.1063/1.3624464]Item type:Item, Achromatic design in the illumination system for a mini projector with LED light source(2011-08-15) ;Pan, Jui-Wen ;Lin, Sheng-Han ;光電系統研究所 ;生醫電子轉譯研究中心Institute of Photonic SystemWe provide a novel achromatic design in the illumination system for a mini projector with an LED light source. The lateral color aberration at the corners of the DMD active area can be reduced to 0.48 mu m by our compact ATIR prism. The total prism size is 4091 mm(3). The spot sizes at the corner and the edge are also controlled under 198 mu m. Moreover, we use a light pipe for color uniformity at the center of the DMD active area. Under the two components for color uniformity, the Delta u' v' is well controlled under 0.016 by a 20 mm length of light pipe. The illuminance uniformity at the active area of the DMD chip is higher than 92.8%. The optical efficiency of the light pipe is 94.1%. (C) 2011 Optical Society of AmericaItem type:Item, Highly efficient femtosecond pulse stretching by tailoring cavity dispersion in erbium fiber lasers with an intracavity short-pass edge filter(2011-08-15) ;Chen, Nan-Kuang ;Liu, Feng-Zhou ;Chuang, Hsiu-Po ;Lai, YinchiehYang, Shang-DaWe demonstrate highly efficient pulse stretching in Er(3+)-doped femtosecond mode-locked fiber lasers by tailoring cavity dispersion using an intracavity short-pass edge filter. The cavity dispersion is preset at around zero to obtain the shortest pulsewidth. When the cutoff wavelength of the short-pass edge filter is thermo-optically tuned to overlap the constituting spectral components of mode-locked pulses, large negative waveguide dispersion is introduced by the steep cutoff slope and the total cavity dispersion is moved to normal dispersion regime to broaden the pulsewidth. The time-bandwidth product of the mode-locked pulse increases with the decreasing temperature at the optical liquid surrounding the short-pass edge filter. Pulse stretch ratio of 3.53 (623.8fs/176.8fs) can be efficiently achieved under a temperature variation of 4 degrees C. (C) 2011 Optical Society of AmericaItem type:Item, Bipolar conductivity in amorphous HfO2(2011-08-15) ;Islamov, D. R. ;Gritsenko, V. A. ;Cheng, C. H. ;Chin, A.交大名義發表This study calculates the contribution of electrons and holes to HfO2 conductivity in Si/HfO2/Ni structures using experiments on injection of minority carriers from n- and p-type silicon. Results show that electrons and holes contribute to the conductivity of HfO2, allowing HfO2 to exhibit two-band conductivity. (C) 2011 American Institute of Physics. [doi:10.1063/1.3626599]Item type:Item, Bipolar conductivity in amorphous HfO(2)(2011-08-15) ;Islamov, D. R. ;Gritsenko, V. A. ;Cheng, C. H. ;Chin, A.交大名義發表This study calculates the contribution of electrons and holes to HfO(2) conductivity in Si/HfO(2)/Ni structures using experiments on injection of minority carriers from n- and p-type silicon. Results show that electrons and holes contribute to the conductivity of HfO(2), allowing HfO(2) to exhibit two-band conductivity. (C) 2011 American Institute of Physics. [doi:10.1063/1.3626599]Item type:Item, Parallel QoS Scheduling for WDM Optical Interconnection System Using a New Ranked Hopfield Neural Network(2011-08-15) ;Tien, Po-Lung ;Ke, Bo-Yu ;電機工程學系Department of Electrical and Computer EngineeringIn this paper, we propose a parallel QoS scheduler for a WDM optical interconnection system (WOPIS), using a new ranked Hopfield neural-network (RHNN). The WOPIS contains a set of Clos-like optical switches and a handful of output FDL-based optical buffers. The RHNN scheduler determines an optimal set of neurons (I/O paths) to be enabled, achieving maximal system throughput and priority differentiation subject to the switch- and buffer-contention-free constraints. Structured with ranked neurons, the RHNN allows higher-rank neurons (higher-priority and/or lower-delay paths) to disable lower-rank neurons that have been enabled during previous iterations. Ranking the neurons unfortunately gives rise to a convergence problem. We present two theorems that give the sufficient conditions for the RHNN scheduler to converge to the optimal solution. We demonstrate via simulation results that, with the computation time within one system slot time, the RHNN scheduler achieves near 100% throughput and multi-level prioritized scheduling.Item type:Item, Nanomechanical characteristics of annealed Si/SiGe superlattices(2011-08-15) ;Wu, Ming-Jhang ;Wen, Hua-Chiang ;Wu, Shyh-Chi ;Yang, Ping-FengLai, Yi-ShaoIn this study, the nanomechanical damage was investigated on the annealed Si/SiGe strained-layer superlattices (SLSs) deposited using an ultrahigh-vacuum chemical vapor deposition (UHVCVD). Nanoscratch, nanoindenter, atomic force microscopy (AFM), and transmission electron microscopy (TEM) techniques were used to determine the nanomechanical behavior of the SiGe films. With a constant force applied, greater hardness number and larger coefficients of friction (mu) were observed on the samples that had been annealed at 600 degrees C, suggesting that annealing of the Si/SiGe SLSs can induce greater shear resistance. AFM morphological studies of the Si/SiGe SLSs revealed that pile-up phenomena occurred on both sides of each scratch, with the formation of some pellets and microparticles. The Si/SiGe SLSs that had been subjected to annealing under various conditions exhibited significantly different features in their indentation results. Indeed, the TEM images reveal slight dislocation propagation in the microstructures. Thus, the hardness and elastic modulus can be increased slightly after annealing treatment because the existence of comparatively unstable microstructures. It is suggested that cracking phenomena dominate the damage cause of Si/SiGe SLSs. (C) 2011 Elsevier B. V. All rights reserved.Item type:Item, The Heterostructure Photonic Crystal Waveguide Splitter(2011-08-15) ;Pei, Ting-Hang ;Huang, Yang-Tung ;電子工程學系及電子研究所Department of Electronics Engineering and Institute of ElectronicsWe propose a two-dimensional heterostructure photonic crystal (PhC) waveguide splitter composed of different air-hole radii in the core and claddings. Two PhCs in the core and claddings are treated as two effective homogeneous media in the first photonic band. By using a triangular coupler in the input port, light can be efficiently coupled from the conventional waveguide into the PhC waveguide splitter. Total internal reflections take place at outer interfaces and confine light in the PhC waveguide very well. Finally, incident light is divided into three parts, and each of them couples to output waveguides with total transmission more than 90%.