Browsing by Issue Date, starting with "2011-08-15"

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Preparation of organic/inorganic hybrid nanocomposites by ultraviolet irradiation and their packaging applications for organic optoelectronic devices
(2011-08-15)
Chung, Ming-Hua
;
Lin, Jian-Shian
;
Hsieh, Tsung-Eong
;
Chen, Nien-Po
;
Juang, Fuh-Shyang
By ultraviolet (UV)-assisted synthetic procedure, we have successfully prepared several UV curable organic/inorganic hybrid nanocomposites with excellent gas barrier capabilities, moderate hardness, and good adhesive strength. The experimental results reveal that the physical properties of nanocomposites depend on their chemical structures. Therefore, introduction of silicone and polyurethane (PU) into the Acrylics backbone dramatically raises the adhesive strength as well as refractive index and lowers the gas penetration. Furthermore, we have also applied lab-made nanocomposite g for the encapsulation of organic optoelectronic devices such as OLEDs, flexible OLEDs, and organic solar cells. With the package of lab-made nanocomposite g, the organic optoelectronic devices effectively resist the entry of moisture and oxygen in the air, extending the lifetimes. (C) 2011 Elsevier B.V. All rights reserved.
One-dimensional photonic crystal nanobeam lasers on a flexible substrate
(2011-08-15)
Lu, Tsan-Wen
;
Chiu, Li-Hsun
;
Lin, Pin-Tso
;
Lee, Po-Tsung
;
光電工程學系
We demonstrate a one-dimensional (1D) photonic crystal (PhC) nanocavity laser composed of hybrid PhC mirrors on a suspended nanobeam (NB) with very small device footprint of 8.5 x 0.57 mu m(2). The 0th-order mode lasing action with low threshold of 280 mu W is observed. Via the optical glue stamping process, the devices are directly transferred onto a flexible polypropylene substrate. Single mode lasing action with effective threshold of 17 mu W is achieved. The robust lasing properties of the device with different bending radii R from infinity to 2.5 mm are obtained. Via finite-element method, we also theoretically address that the lasing wavelength is almost invariant when R> 1.0 mm. This flexible 1D PhC NB laser will be a good candidate for efficient nanolaser in future flexible photonic integrated circuits with ultrahigh component density. (C) 2011 American Institute of Physics. [doi:10.1063/1.3626592]
Effects of GaAsSb capping layer thickness on the optical properties of InAs quantum dots
(2011-08-15)
Hsu, Wei-Ting
;
Liao, Yu-An
;
Hsu, Feng-Chang
;
Chiu, Pei-Chin
;
Chyi, Jen-Inn
The optical properties of GaAsSb-capped InAs quantum dots (QDs) with different capping layer thickness are investigated. Both the emission energy and the recombination lifetime are found to be correlated with the capping layer thicknesses. Theoretical calculations indicate that the quantum confinement and the wave function distribution of hole states are sensitive to the GaAsSb capping layer thickness. The Sb induced change in QD size also plays a role in the optical properties of GaAsSb-capped QDs. Controlling the GaAsSb capping layer thickness is a feasible way to tailor the InAs QDs for long-wavelength applications. (C) 2011 American Institute of Physics. [doi:10.1063/1.3624464]
Achromatic design in the illumination system for a mini projector with LED light source
(2011-08-15)
Pan, Jui-Wen
;
Lin, Sheng-Han
;
光電系統研究所
;
生醫電子轉譯研究中心
;
Institute of Photonic System
We provide a novel achromatic design in the illumination system for a mini projector with an LED light source. The lateral color aberration at the corners of the DMD active area can be reduced to 0.48 mu m by our compact ATIR prism. The total prism size is 4091 mm(3). The spot sizes at the corner and the edge are also controlled under 198 mu m. Moreover, we use a light pipe for color uniformity at the center of the DMD active area. Under the two components for color uniformity, the Delta u' v' is well controlled under 0.016 by a 20 mm length of light pipe. The illuminance uniformity at the active area of the DMD chip is higher than 92.8%. The optical efficiency of the light pipe is 94.1%. (C) 2011 Optical Society of America
Highly efficient femtosecond pulse stretching by tailoring cavity dispersion in erbium fiber lasers with an intracavity short-pass edge filter
(2011-08-15)
Chen, Nan-Kuang
;
Liu, Feng-Zhou
;
Chuang, Hsiu-Po
;
Lai, Yinchieh
;
Yang, Shang-Da
We demonstrate highly efficient pulse stretching in Er(3+)-doped femtosecond mode-locked fiber lasers by tailoring cavity dispersion using an intracavity short-pass edge filter. The cavity dispersion is preset at around zero to obtain the shortest pulsewidth. When the cutoff wavelength of the short-pass edge filter is thermo-optically tuned to overlap the constituting spectral components of mode-locked pulses, large negative waveguide dispersion is introduced by the steep cutoff slope and the total cavity dispersion is moved to normal dispersion regime to broaden the pulsewidth. The time-bandwidth product of the mode-locked pulse increases with the decreasing temperature at the optical liquid surrounding the short-pass edge filter. Pulse stretch ratio of 3.53 (623.8fs/176.8fs) can be efficiently achieved under a temperature variation of 4 degrees C. (C) 2011 Optical Society of America
Bipolar conductivity in amorphous HfO2
(2011-08-15)
Islamov, D. R.
;
Gritsenko, V. A.
;
Cheng, C. H.
;
Chin, A.
;
交大名義發表
This study calculates the contribution of electrons and holes to HfO2 conductivity in Si/HfO2/Ni structures using experiments on injection of minority carriers from n- and p-type silicon. Results show that electrons and holes contribute to the conductivity of HfO2, allowing HfO2 to exhibit two-band conductivity. (C) 2011 American Institute of Physics. [doi:10.1063/1.3626599]
Bipolar conductivity in amorphous HfO(2)
(2011-08-15)
Islamov, D. R.
;
Gritsenko, V. A.
;
Cheng, C. H.
;
Chin, A.
;
交大名義發表
This study calculates the contribution of electrons and holes to HfO(2) conductivity in Si/HfO(2)/Ni structures using experiments on injection of minority carriers from n- and p-type silicon. Results show that electrons and holes contribute to the conductivity of HfO(2), allowing HfO(2) to exhibit two-band conductivity. (C) 2011 American Institute of Physics. [doi:10.1063/1.3626599]
Parallel QoS Scheduling for WDM Optical Interconnection System Using a New Ranked Hopfield Neural Network
(2011-08-15)
Tien, Po-Lung
;
Ke, Bo-Yu
;
電機工程學系
;
Department of Electrical and Computer Engineering
In this paper, we propose a parallel QoS scheduler for a WDM optical interconnection system (WOPIS), using a new ranked Hopfield neural-network (RHNN). The WOPIS contains a set of Clos-like optical switches and a handful of output FDL-based optical buffers. The RHNN scheduler determines an optimal set of neurons (I/O paths) to be enabled, achieving maximal system throughput and priority differentiation subject to the switch- and buffer-contention-free constraints. Structured with ranked neurons, the RHNN allows higher-rank neurons (higher-priority and/or lower-delay paths) to disable lower-rank neurons that have been enabled during previous iterations. Ranking the neurons unfortunately gives rise to a convergence problem. We present two theorems that give the sufficient conditions for the RHNN scheduler to converge to the optimal solution. We demonstrate via simulation results that, with the computation time within one system slot time, the RHNN scheduler achieves near 100% throughput and multi-level prioritized scheduling.
Nanomechanical characteristics of annealed Si/SiGe superlattices
(2011-08-15)
Wu, Ming-Jhang
;
Wen, Hua-Chiang
;
Wu, Shyh-Chi
;
Yang, Ping-Feng
;
Lai, Yi-Shao
In this study, the nanomechanical damage was investigated on the annealed Si/SiGe strained-layer superlattices (SLSs) deposited using an ultrahigh-vacuum chemical vapor deposition (UHVCVD). Nanoscratch, nanoindenter, atomic force microscopy (AFM), and transmission electron microscopy (TEM) techniques were used to determine the nanomechanical behavior of the SiGe films. With a constant force applied, greater hardness number and larger coefficients of friction (mu) were observed on the samples that had been annealed at 600 degrees C, suggesting that annealing of the Si/SiGe SLSs can induce greater shear resistance. AFM morphological studies of the Si/SiGe SLSs revealed that pile-up phenomena occurred on both sides of each scratch, with the formation of some pellets and microparticles. The Si/SiGe SLSs that had been subjected to annealing under various conditions exhibited significantly different features in their indentation results. Indeed, the TEM images reveal slight dislocation propagation in the microstructures. Thus, the hardness and elastic modulus can be increased slightly after annealing treatment because the existence of comparatively unstable microstructures. It is suggested that cracking phenomena dominate the damage cause of Si/SiGe SLSs. (C) 2011 Elsevier B. V. All rights reserved.
The Heterostructure Photonic Crystal Waveguide Splitter
(2011-08-15)
Pei, Ting-Hang
;
Huang, Yang-Tung
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
We propose a two-dimensional heterostructure photonic crystal (PhC) waveguide splitter composed of different air-hole radii in the core and claddings. Two PhCs in the core and claddings are treated as two effective homogeneous media in the first photonic band. By using a triangular coupler in the input port, light can be efficiently coupled from the conventional waveguide into the PhC waveguide splitter. Total internal reflections take place at outer interfaces and confine light in the PhC waveguide very well. Finally, incident light is divided into three parts, and each of them couples to output waveguides with total transmission more than 90%.
Rayleigh Backscattering Circumvention in Ring-Based Access Network Using RSOA-ONU
(2011-08-15)
Chow, C. W.
;
Yeh, C. H.
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Wu, Y. F.
;
Lin, Y. H.
;
Shih, F. Y.
We propose and demonstrate a Rayleigh backscattering (RB) interferometric beat noise circumvention architecture for the ring-based wavelength-division-multiplexed (WDM) access networks. RB can be significantly avoided since the RB and the upstream signal are traveling in opposite directions. We also analyze the performance of the proposed scheme for upgrading to 40 Gb/s and the influence of wavelength-drift at the remote node (RN).
Silica materials recovered from photonic industrial waste powder: Its extraction, modification, characterization and application
(2011-08-15)
Lin, Liang-Yi
;
Kuo, Jien-Ting
;
Bai, Hsunling
;
環境工程研究所
;
Institute of Environmental Engineering
This study explored the possibility of recovering waste powder from photonic industry into two useful resources, sodium fluoride (NaF) and the silica precursor solution. An alkali fusion process was utilized to effectively separate silicate supernatant and the sediment. The obtained sediment contains purified NaF (>90%), which provides further reuse possibility since NaF is widely applied in chemical industry. The supernatant is a valuable silicate source for synthesizing mesoporous silica material such as MCM-41. The MCM-41 produced from the photonic waste powder (PWP), namely MCM-41(PWP), possessed high specific surface areas (1082 m(2)/g), narrow pore size distributions (2.95 nm) and large pore volumes (0.99 cm(3)/g). The amine-modified MCM-41 (PWP) was further applied as an adsorbent for the capture of CO2 greenhouse gas. Breakthrough experiments demonstrated that the tetraethylenepentamine (TEPA) functionalized MCM-41(PWP) exhibited an adsorption capacity (82 mg CO(2)/g adsorbent) of only slightly less than that of the TEPA/MCM-41 manufactured from pure chemical (97 mg CO(2)/g adsorbent), and its capacity is higher than that of TEPA/ZSM-5 zeolite (43 mg CO(2)/g adsorbent). The results revealed both the high potential of resource recovery from the photonic solid waste and the cost-effective application of waste-derived mesoporous adsorbent for environmental protection. (C) 2011 Elsevier B.V. All rights reserved.
Improving the photoluminescence properties of self-assembled InAs surface quantum dots by incorporation of antimony
(2011-08-15)
Chiang, C. H.
;
Wu, Y. H.
;
Hsieh, M. C.
;
Yang, C. H.
;
Wang, J. F.
This study investigates the effects of surfactant and segregation from InAs surface quantum dots (SQDs) by incorporating antimony (Sb) into the QD layers. The Sb surfactant effect extends planar growth and suppresses dot formation. Incorporating Sb can reduce the density of SQDs by more than two orders of magnitude. Photoluminescence (PL) reveals enhancement in the optical properties of InAs SQDs as the Sb beam equivalent pressure (BEP) increases. This improvement is caused by the segregation of Sb on the surface of SQDs, which reduces non-radiative recombination and suppresses carrier loss. The dark line at the SQDs surface in the transmission electron microscopic image suggests that the incorporated Sb probably segregates close to the surface of the SQDs. These results indicate a marked Sb segregation effect that can be exploited to improve the surface-sensitive properties of SQDs for biological sensing. Crown Copyright (C) 2011 Published by Elsevier B. V. All rights reserved.
Thermal emission at near-infrared wavelengths from three-dimensional copper photonic crystals
(2011-08-15)
Wu, Shich-Chuan
;
Yang, Yu-Lin
;
Huang, Wen-Hsien
;
Huang, Yang-Tung
;
電子工程學系及電子研究所
A three-dimensional copper photonic crystal was fabricated with the high compatibility process, damascene copper interconnections technique. The reflectance and transmittance spectra of this structure were measured with the Fourier-transform infrared spectroscopy and simulated with the 3 D finite-difference time-domain method. From the experiment data, it is shown that this structure exhibits a large photonic bandgap from mid-infrared regime to lambda = 1.95 mu m. At a heating temperature of 420 degrees C, it is observed that thermal emission is enhanced near the bandedge lambda = 1.71 mu m and suppressed in the bandgap region. This is attributed to the enhancement of photonic density of states near the bandedge. (C) 2011 American Institute of Physics. [doi:10.1063/1.3625263]
Volume polarization holographic recording in thick phenanthrenequinone-doped poly(methyl methacrylate) photopolymer
(2011-08-15)
Lin, Shiuan Huei
;
Chen, Po-Lin
;
Chuang, Chun-I
;
Chao, Yu-Faye
;
Hsu, Ken Y.
Volume polarization holographic recording in phenanthrenequinone-doped poly (methyl methacrylate) photopolymer is obtained. Photoinduced birefringence in a 2mm thick sample is measured by a phase-modulated ellipsometry. The birefringence induced in this material by linearly polarized beam at 514nm reaches 1.2 x 10(-5). In addition, ability for recording volume polarization grating using two different polarization configurations is demonstrated and compared. The experimental results show that the diffraction efficiency of the hologram reaches to similar to 40% by using two orthogonal circularly polarized beams. (C) 2011 Optical Society of America
次臨界多埠暫存器
(2011-08-16)
楊仕祺
;
楊皓義
;
黃威
本發明為一種次臨界多埠暫存器，利用多重暫存器庫(Multi-bank)的架構達到多重埠(Multi-port)的效果，並且支援數個同時存取及撞處理，其中，各位元胞(cell)係包含兩個高臨界電壓的電晶體，使其在次臨界電壓仍可操作並增加抗雜訊能力；一負電壓寫入機制及位元線電壓偵測機制確保在次臨界電壓操作下，提高將資料寫入位元胞的機率；在讀取機制方面，係使用一皆以NMOS電晶體構成的讀取緩衝器以及一可控制的預充電路對位元胞進行讀取，如此可消除不必要的漏電，提高讀取成功的機率。
腹式呼吸訓練裝置、腹式呼吸訓練系統及其方法
(2011-08-16)
蕭子健
;
徐如欣
;
謝岱凌
本發明提出一種腹式呼吸訓練裝置、腹式呼吸訓練系統及其方法。所述之腹式呼吸訓練裝置適用於訓練使用者以進行腹式呼吸，並包括訓練單元、感測單元、資訊擷取與轉換單元及顯示單元，而訓練單元產生訓練波形及指示。感測單元鄰接於使用者的腹部，並量測使用者的腹部呼吸訊號。資訊擷取與轉換單元電性耦接至感測單元及訓練單元，並根據所量測的腹部呼吸訊號而產生使用者腹部呼吸波形。顯示單元電性耦接至訓練單元，並顯示訓練波形及指示給使用者，而使用者跟著顯示單元上的訓練波形以進行腹式呼吸。
Method of forming thin-film structure by oblique-angle deposition
(2011-08-16)
Chang Chia-Hua
;
Yang Chin-Sheng
;
Chiu Ching-Hua
;
Yu Pei-Chen
;
Kuo Hao-Chung
A method of forming thin-film structure by oblique-angle deposition is provided. The method includes the steps of: evaporating target source in a chamber by an electron beam evaporation system, and introducing process gas into the chamber and adjusting tilt angle of the evaporation substrate and controlling temperature in the chamber during evaporation to form thin-film on a evaporation substrate by oblique-angle deposition, and then annealing the evaporation substrate to form a thin-film having porous nanorod microstructure.
用於顯示器之彩色畫素
(2011-08-16)
范士岡
;
邱誠樸
;
陳世強
一種用於顯示器之彩色畫素，包含：至少三個子畫素，每一個子畫素含有一個上載體、一個下載體、一個固定至該上載體之上電極、一個固定至該下載體之下電極、一個設置在該上及下電極之間的溶液，及多數個設置在該溶液內之粒子；其中，該等子畫素之粒子會在一特定驅動頻率下被電極化，且該等子畫素在顯示時可具有不同色彩；及該等子畫素之色彩分別透過該等子畫素之上載體、該等下載體、該等溶液或是該等粒子所提供。本發明之彩色畫素在應用至顯示器時，可顯示多樣且穩定的色彩變化。
具有負載平衡的可動態重組異質處理器架構以及動態配置方法
(2011-08-16)
鍾崇斌
;
楊惠親
;
陳逸麒
本發明係揭露一種具有負載平衡的可動態重組異質處理器架構以及動態配置方法，係利用工作控制邏輯單元偵測各微處理器的暫存區飽和程度，以分析各微處理器工作量的比例，以動態配置可動態重組異質處理器輔助各個微處理器執行指令運算，來平均每一微處理器的工作比例。此外，本發明的設計將只需增加極少的額外硬體成本，即可有效達到提升整體微處理器執行效能的功效。