Browsing by Issue Date, starting with "2011-08-16"
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Item type:Item, 次臨界多埠暫存器(2011-08-16) ;楊仕祺 ;楊皓義黃威本發明為一種次臨界多埠暫存器,利用多重暫存器庫(Multi-bank)的架構達到多重埠(Multi-port)的效果,並且支援數個同時存取及撞處理,其中,各位元胞(cell)係包含兩個高臨界電壓的電晶體,使其在次臨界電壓仍可操作並增加抗雜訊能力;一負電壓寫入機制及位元線電壓偵測機制確保在次臨界電壓操作下,提高將資料寫入位元胞的機率;在讀取機制方面,係使用一皆以NMOS電晶體構成的讀取緩衝器以及一可控制的預充電路對位元胞進行讀取,如此可消除不必要的漏電,提高讀取成功的機率。Item type:Item, 腹式呼吸訓練裝置、腹式呼吸訓練系統及其方法(2011-08-16) ;蕭子健 ;徐如欣謝岱凌本發明提出一種腹式呼吸訓練裝置、腹式呼吸訓練系統及其方法。所述之腹式呼吸訓練裝置適用於訓練使用者以進行腹式呼吸,並包括訓練單元、感測單元、資訊擷取與轉換單元及顯示單元,而訓練單元產生訓練波形及指示。感測單元鄰接於使用者的腹部,並量測使用者的腹部呼吸訊號。資訊擷取與轉換單元電性耦接至感測單元及訓練單元,並根據所量測的腹部呼吸訊號而產生使用者腹部呼吸波形。顯示單元電性耦接至訓練單元,並顯示訓練波形及指示給使用者,而使用者跟著顯示單元上的訓練波形以進行腹式呼吸。Item type:Item, Method of forming thin-film structure by oblique-angle deposition(2011-08-16) ;Chang Chia-Hua ;Yang Chin-Sheng ;Chiu Ching-Hua ;Yu Pei-ChenKuo Hao-ChungA method of forming thin-film structure by oblique-angle deposition is provided. The method includes the steps of: evaporating target source in a chamber by an electron beam evaporation system, and introducing process gas into the chamber and adjusting tilt angle of the evaporation substrate and controlling temperature in the chamber during evaporation to form thin-film on a evaporation substrate by oblique-angle deposition, and then annealing the evaporation substrate to form a thin-film having porous nanorod microstructure.Item type:Item, 用於顯示器之彩色畫素(2011-08-16) ;范士岡 ;邱誠樸陳世強一種用於顯示器之彩色畫素,包含:至少三個子畫素,每一個子畫素含有一個上載體、一個下載體、一個固定至該上載體之上電極、一個固定至該下載體之下電極、一個設置在該上及下電極之間的溶液,及多數個設置在該溶液內之粒子;其中,該等子畫素之粒子會在一特定驅動頻率下被電極化,且該等子畫素在顯示時可具有不同色彩;及該等子畫素之色彩分別透過該等子畫素之上載體、該等下載體、該等溶液或是該等粒子所提供。本發明之彩色畫素在應用至顯示器時,可顯示多樣且穩定的色彩變化。Item type:Item, 具有負載平衡的可動態重組異質處理器架構以及動態配置方法(2011-08-16) ;鍾崇斌 ;楊惠親陳逸麒本發明係揭露一種具有負載平衡的可動態重組異質處理器架構以及動態配置方法,係利用工作控制邏輯單元偵測各微處理器的暫存區飽和程度,以分析各微處理器工作量的比例,以動態配置可動態重組異質處理器輔助各個微處理器執行指令運算,來平均每一微處理器的工作比例。此外,本發明的設計將只需增加極少的額外硬體成本,即可有效達到提升整體微處理器執行效能的功效。Item type:Item, 含有一揮發性液體之裝置之供液體容置單元及其製法(2011-08-16) ;范士岡 ;邱誠樸許青翔一種含有一揮發性液體之裝置之供液體容置單元包含:一下載體;一設置在該下載體上方之圍壁,其中,該圍壁與該下載體界定一供容納該揮發性液體之腔室;一覆蓋或包覆該揮發性液體之固態保護層;及一設置在該圍壁上方且覆蓋該腔室之上載體。本發明之供液體容置單元除了可讓該揮發性液體穩定存在並執行其既定功能之外,更可有效延長裝置之使用壽命。Item type:Item, 太陽能集電電源管理系統(2011-08-16) ;吳俊毅 ;謝維致黃威本發明係揭露一種太陽能集電電源管理系統,用於管理太陽能光伏電池模組產生的電能,包含:一最大功率追蹤電路模組、一充電電路及一電壓轉換模組;用於管理光伏電池模組的電能轉換、供給外界使用及儲存於儲電池。其中,最大功率追蹤電路模組可調整光伏電池模組的輸出電流,以使光伏電池在輸出極限範圍內可以輸出最大的功率,提升太陽能轉換效率。其中,電壓轉換模組則可以將光伏電池模組產生的電能轉變成不同需求的電壓格式供外界使用,如直流5.6V、1.0V、0.6~0.3V低電壓或-1.2V負電壓的輸出格式。由於該電源管理系統電路結構簡單,可設計成系統晶片(SoC),除降低成本外,可使應用更為廣泛。Item type:Item, Load balancing apparatus and method in wireless network hotspots(2011-08-16) ;Tsao Shiao-Li ;Hsu Chih-ChienYu Tai-XingDisclosed is a load balancing apparatus and method in wireless network hotspots, which comprises a resource allocation module and a load balancer. The resources reallocation module establishes the resources module and the relationship between access points (APs) and STAs in the wireless network hotspots, and seeks possible load balance shift paths (LBSPs). From these possible LBSPs, an LBSP is selected. Based on the selected LBSP, the load balancer reallocates network resources and dynamically arranges the load among the APs in the wireless network hotspots. This invention can be applicable to a centralized or a decentralized wireless communication system.Item type:Item, A relational perspective of attribute reduction in rough set-based data analysis(2011-08-16) ;Fan, Tuan-Fang ;Liau, Churn-Jung ;Liu, Duen-Ren ;資訊管理與財務金融系 註:原資管所+財金所Department of Information Management and FinanceAttribute reduction is very important in rough set-based data analysis (RSDA) because it can be used to simplify the induced decision rules without reducing the classification accuracy. The notion of reduct plays a key role in rough set-based attribute reduction. In rough set theory, a reduct is generally defined as a minimal subset of attributes that can classify the same domain of objects as unambiguously as the original set of attributes. Nevertheless, from a relational perspective, RSDA relies on a kind of dependency principle. That is, the relationship between the class labels of a pair of objects depends on component-wise comparison of their condition attributes. The larger the number of condition attributes compared, the greater the probability that the dependency will hold. Thus, elimination of condition attributes may cause more object pairs to violate the dependency principle. Based on this observation, a reduct can be defined alternatively as a minimal subset of attributes that does not increase the number of objects violating the dependency principle. While the alternative definition coincides with the original one in ordinary RSDA, it is more easily generalized to cases of fuzzy RSDA and relational data analysis. (C) 2010 Elsevier B.V. All rights reserved.Item type:Item, On Modulating the Self-Assembly Behaviors of Poly(styrene-b-4-vinylpyridine)/Octyl Gallate Blends in Solution State via Hydrogen Bonding from Different Common Solvents(2011-08-16) ;Chen, Shih-Chien ;Kuo, Shiao-Wei ;Chang, Feng-Chih ;應用化學系Department of Applied ChemistryWe have investigated the complexation-induced phase behavior of the mixtures of poly(styrene-b-4-vinylpyridine) (PS-b-P4VP) and octyl gallate (OG) due to hydrogen bonding in different solvents. The Fourier transform infrared spectroscopic result indicates that the hydrogen-bonding was formed between the P4VP blocks and OG in both THF and DMF, implying the P4VP blocks can bind to OG. For PS-b-P4VP/OG mixture in chloroform, the morphological transitions were induced from the unimer configuration to swollen aggregate and complex-micelles by adding OG. Interestingly, the complex-micelles can lead the formation of the honeycomb structure from chloroform solution. The PS-b-P4VP/OG mixture in THF, behaving an amphiphilic diblock copolymer in solution state, exhibited a series of morphological transitions from sphere, pearl-necklace-liked rod, worm-liked rod, vesicle, to core shell-corona aggregates by increasing the OG content. In contrast, the PS-b-P4VP/OG mixture in DMF maintained the unimer configuration upon adding OG. Therefore, the complexation-induced morphology of the mixtures of PS-b-P4VP and OG can be mediated by adopting different common solvents to affect the self-assembly behavior.Item type:Item, 高速升壓之充電汞電路(2011-08-16) ;陳建廷 ;趙昌博邵啟意在此揭露一種充電汞電路(charge pump circuit),其包含輸入訊號、二極體、第一控制開關、第二控制開關與充電元件。二極體用於控制輸入訊號的正向充電而防止該控制訊號的逆向漏電。當輸入訊號為第一電壓位準時,第一控制開關為關閉(close),而當輸入訊號為第二電壓位準時,第一控制開關為開啟(open)。當輸入訊號為第一電壓位準時,第二控制開關為開啟(open),而當輸入訊號為第二電壓位準時,第二控制開關為關閉(close)。每個充電元件電性連接該二極體,當輸入訊號為第一電壓位準時,電元件為充電狀態,而當輸入訊號為第二電壓位準時,充電元件為放電狀態。此充電汞電路可在一工作週期內完成升壓輸出電壓N倍的工作,大幅縮短升壓的時間。Item type:Item, 超晶格結構的太陽能電池(2011-08-16)張俊彥本發明提供一種高效率新型a-Si/c-Si之薄膜太陽能電池,其使用選自於由超晶格層、a-SiGe層、a-Si與μc-Si之混合層、及a-Si與poly-Si之混合層所構成的群組之至少一者來作為具有固定能隙之過渡層,或者是使用選自於由超晶格層、a-SiGe層、a-Si漸變為μc-Si之層、及a-Si漸變為poly-Si之層所構成的群組之至少一者來形成具有漸變能隙之過渡層,來取代習知的多接面串疊型太陽電池中之n+/TCO/p+接面,使太陽能電池的整體能隙更平滑而降低載子被再結合的機率,其中藉由在成膜期間調整製程氣體中之氫含量來形成a-Si與μc-Si之混合層、a-Si與poly-Si之混合層、a-Si漸變為μc-Si之層、或a-Si漸變為poly-Si之層。此外,藉由在a-Si/c-Si二層光吸收層結構中增加作為第3層光吸收層之μc-Ge層而成為a-Si/c-Si/μc-Ge三層光吸收層結構,能吸收太陽光譜中之長波長光,提升光吸收效果。Item type:Item, Real-Time Vibrational Dynamics in Chlorophyll a Studied with a Few-Cycle Pulse Laser(2011-08-17) ;Du, Juan ;Teramoto, Takahiro ;Nakata, Kazuaki ;Tokunaga, EijiKobayashi, TakayoshiWe use a 6.8-fs laser as the light source for broad-band femtosecond pump-probe real-time vibrational spectroscopy to investigate both electronic relaxation and vibrational dynamics of the Q(y)-band of Chl-a at 293 K. More than 25 vibrational modes coupled to the Q(y) transition are observed. Eleven of them have been clarified predominantly due to the excited state, and six of them are concluded to be nearly exclusively resulting from the ground-state wave-packet motion. Moreover, thanks to the broad-band detection over 5000 cm(-1), the modulated signals due to the excited state vibrational coherence are observed on both sides of the 0-0 transition with equal separation. The corresponding nonlinear process has been studied using a three-level model, from which the probe wavelength dependence of the phase of the periodic modulation can be calculated. The probe wavelength dependence of the vibrational amplitude is interpreted in terms of the interaction between the "pump" or "laser," Stokes, and anti-Stokes field intermediated by the molecular vibrations. In addition, an excited state absorption peak at similar to 709 nm has been observed. To the best of our knowledge, this is the first study of broad-band real-time vibrational spectroscopy in Chl-a.Item type:Item, 周波数逓倍器装置及びその操作方法(2011-08-18) ;郭 建男顏 子超【課題】本発明は、従来の周波数逓倍器による悪い高調波抑圧比を改善し、又、周波数逓倍器からの発振周波数は、他の高調波に妨害されにくいため、周波数逓倍器装置及びその操作方法を提供することを目的とする。【解決手段】本発明の周波数逓倍器装置は、高調波発生器、高調波抑制器及び特定高調波応用装置を含んでいる。前記高調波発生器は、基本周波数を有する入力信号を受信して、第一高調波信号成分及び第二高調波信号成分を含む高調波信号を発生させる。前記高調波抑制器は、前記高調波信号を受信して、前記第一高調波信号成分を抑制し、前記第二高調波信号成分を高める。前記周波数逓倍器装置は、高められた前記第二高調波信号成分を受信する。【選択図】図3(b)Item type:Item, ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT(2011-08-18) ;Ker Ming-Dou ;Lin Chun-YuWang Chang-TzuAn electrostatic discharge (ESD) protection circuit, suitable for an input stage circuit including a first N channel metal oxide semiconductor (NMOS) transistor, is provided. The ESD protection circuit includes an P channel metal oxide semiconductor (PMOS) transistor and an impedance device, in which the PMOS transistor has a source coupled to a gate of the first NMOS transistor, and a drain coupled to a source of the first NMOS transistor, and the impedance device is coupled between a gate of the PMOS transistor and a first power rail to perform a initial-on ESD protection circuit. The ESD protection circuit formed by the PMOS transistor and the resistor is capable of increasing the turn-on speed of the ESD protection circuit and preventing the input stage circuit from a CDM ESD event.Item type:Item, THIN FILM SOLAR CELL WITH GRADED BANDGAP STRUCTURE(2011-08-18)CHANG Chun-YenA thin film solar cell with a graded bandgap structure comprises a front contact, a first light absorption layer, a transition layer, a second light absorption layer and a back contact. The first light absorption layer is formed on the front contact, the transition layer is formed on the first light absorption layer, the second light absorption layer is formed on the transition layer, and the back contact is formed on the second light absorption layer, wherein the transition layer has a graded bandgap, which is made by alternating a layer of the first superlattice layers, having a first bandgap, with a layer of the second superlattice layers, having a second bandgap, in a tandem arrangement, based on the condition that the thickness of each layer of the first and the second superlattice layers is varied increasing, decreasing or increasing first and then decreasing.Item type:Item, Red and Green Fluorosulfide Phosphor, Preparation Method and White-Light Emitting Diodes(2011-08-18) ;Chen Teng-MingWu Yun-ChenNovel red and green fluorosulfide phosphors have a chemical formula of (A1-x-yCexBy)SF, wherein A and B are both trivalent metal ions, 0Item type:Item, COLOR DISPLAY DEVICE(2011-08-18) ;Fan Shih-Kang ;Chiu Cheng-PuChen Shih-ChiangA color display device includes a plurality of pixel display elements and a driving circuit. Each of the pixel display elements includes a plurality of sub-pixel display elements. Each of the sub-pixel display elements includes first and second supports, first and second electrodes attached to inner faces of the first and second supports, respectively, a solution disposed between the first and second electrodes, and particles dispersed in the solution. The particles of the sub-pixel display elements of a same one of the pixel display elements are electrically polarizable by voltage signals supplied by the driving circuit, the voltage signals having the same predetermined driving frequency.Item type:Item, Enhanced Nucleation and Growth of Diamond Film on Si by CVD Using a Chemical Precursor(2011-08-18) ;Tiwari, Rajanish N. ;Tiwari, Jitendra N. ;Chang, Li ;Yoshimura, M.材料科學與工程學系Nucleation of diamond is of great importance for its growth, and a detailed understanding of the nucleation process is, therefore, desired for Many applications. The pretreatment of the substrate surface may impact the initial growth period. This study demonstrates the synthesis of diamond films by microwave plasma chemical vapor deposition on a Pt/SiO(2)/Si substrate. The Pt particles were deposited on the SiO(2)/Si surface at room temperature, Whereas adamantane was seeded on the SiO(2)/Si surface by ultrasonic treatment:The Pt particles on the SiO(2) surface behave as a catalyst, which adsorb hydrocarbons from adamantane contained plasma and give distinct features of carbon in the early stage deposition The adamantane transforms not only in the nanodiamond phase but also in other carbon phases, which can then act as nuclei for diamond growth. These kinds of phases enhanced the diamond density at partially low temperature deposition. The presence of an oxide intermediate layer betweeen Pt and Si prevents silicidation as well as SiC in diamond deposition.Item type:Item, 邊射型高功率雷射二極體結構(2011-08-21) ;盧廷昌陳瓊華一種邊射型高功率雷射二極體結構,其係具有啁啾(chirp)型周期性分佈之複數模態延展子層,其近場光型會呈現L形,且光場強度高的部分與多重量子井重疊良好,因此可獲得良好的光侷限因子,而且,光場強度低的部分會盡量往n型披覆層延伸,如此可降低邊射型高功率雷射二極體鏡面的光功率密度,並降低垂直發散角,增加此邊射型高功率雷射二極體的壽命。