Browsing by Issue Date, starting with "2011-08-21"

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邊射型高功率雷射二極體結構
(2011-08-21)
盧廷昌
;
陳瓊華
一種邊射型高功率雷射二極體結構，其係具有啁啾(chirp)型周期性分佈之複數模態延展子層，其近場光型會呈現L形，且光場強度高的部分與多重量子井重疊良好，因此可獲得良好的光侷限因子，而且，光場強度低的部分會盡量往n型披覆層延伸，如此可降低邊射型高功率雷射二極體鏡面的光功率密度，並降低垂直發散角，增加此邊射型高功率雷射二極體的壽命。
Effect of high-pressure H2O treatment on elimination of interfacial GeOX layer between ZrO2 and Ge stack
(2011-08-22)
Huang, Chen-Shuo
;
Liu, Po-Tsun
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光電工程學系
;
顯示科技研究所
;
光電工程研究所
This investigation demonstrates the effect of high-pressure H2O treatment on the elimination of the interfacial germanium suboxide (GeOX) layer between ZrO2 and Ge. The formation of GeOX interlayer increases the gate-leakage current and worsen the controllability of the gate during deposition or thermal cycles. X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy reveal that high-pressure H2O treatment eliminates the interfacial GeOX layer. The physical mechanism involves the oxidation of non-oxidized Zr with H2O and the reduction of GeOX by H-2. Treatment with H2O reduces the gate-leakage current of a ZrO2/Ge capacitor by a factor of 1000. (C) 2011 American Institute of Physics. [doi:10.1063/1.3627187]
Effect of high-pressure H(2)O treatment on elimination of interfacial GeO(X) layer between ZrO(2) and Ge stack
(2011-08-22)
Huang, Chen-Shuo
;
Liu, Po-Tsun
;
光電工程學系
;
顯示科技研究所
;
Department of Photonics
This investigation demonstrates the effect of high-pressure H(2)O treatment on the elimination of the interfacial germanium suboxide (GeO(X)) layer between ZrO(2) and Ge. The formation of GeO(X) interlayer increases the gate-leakage current and worsen the controllability of the gate during deposition or thermal cycles. X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy reveal that high-pressure H(2)O treatment eliminates the interfacial GeO(X) layer. The physical mechanism involves the oxidation of non-oxidized Zr with H(2)O and the reduction of GeO(X) by H(2). Treatment with H(2)O reduces the gate-leakage current of a ZrO(2)/Ge capacitor by a factor of 1000. (C) 2011 American Institute of Physics. [doi:10.1063/1.3627187]
交大e-News第100期
(2011-08-22)
Secretariat
;
國立交通大學秘書室
Group authentication method
(2011-08-23)
Chen Yu-Wen
;
Wang Jui-Tang
;
Tseng Chien-Chao
A group authentication method adaptable to a communication system is disclosed. The communication system includes a user group, a serving network, and a home network. The user group includes at least one mobile station. The home network pre-distributes a group authentication key to itself and all the mobile stations in the same user group and generates a mobile station authentication key for each mobile station. The home network generates a group list for recording related information of the user group. The home network has a database for recording the group list. The serving network has a database for recording the group list and a group authentication data received from the home network. The group authentication method includes following steps. The serving network performs an identification action to a mobile station. The communication system performs a full authentication action or a local authentication action according to the result of the identification action.
Evidence for s-wave superconductivity in noncentrosymmetric Re24Nb5 from Nb-93 NMR measurements
(2011-08-25)
Lue, C. S.
;
Su, T. H.
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Liu, H. F.
;
Young, Ben-Li
;
電子物理學系
We report a Nb-93 nuclear magnetic resonance (NMR) study on the noncentrosymmetric superconductor Re24Nb5. Below the superconducting temperature T-c(H), the spin susceptibility probed by the Nb-93 NMR Knight shift gradually decreases with lowering temperature, accompanied by the broadening of the resonance spectrum. Such behavior is commonly observed in the BCS-type superconductors. The Nb-93 NMR spin-lattice relaxation rate (1/T-1) shows a well-defined coherence peak just below T-c(H), followed by a marked decrease with further decreasing temperature. Moreover, the 1/T-1 data in the superconducting state were found to obey a single exponential expression, yielding a nodeless gap Delta/kB = 10.3 K. This value gives the ratio of 2 Delta/kBT(c)(H) = 3.55, that is almost identical with the value of 3.5 predicted from BCS theory. On these bases, we conclude that the noncentrosymmetric Re24Nb5 compound can be characterized as a weakly coupled BCS-type superconductor.
Evidence for s-wave superconductivity in noncentrosymmetric Re(24)Nb(5) from (93)Nb NMR measurements
(2011-08-25)
Lue, C. S.
;
Su, T. H.
;
Liu, H. F.
;
Young, Ben-Li
;
電子物理學系
We report a (93)Nb nuclear magnetic resonance (NMR) study on the noncentrosymmetric superconductor Re(24)Nb(5). Below the superconducting temperature T(c)(H), the spin susceptibility probed by the (93)Nb NMR Knight shift gradually decreases with lowering temperature, accompanied by the broadening of the resonance spectrum. Such behavior is commonly observed in the BCS-type superconductors. The (93)Nb NMR spin-lattice relaxation rate (1/T(1)) shows a well-defined coherence peak just below T(c)(H), followed by a marked decrease with further decreasing temperature. Moreover, the 1/T(1) data in the superconducting state were found to obey a single exponential expression, yielding a nodeless gap Delta/kB = 10.3 K. This value gives the ratio of 2 Delta/kBT(c)(H) = 3.55, that is almost identical with the value of 3.5 predicted from BCS theory. On these bases, we conclude that the noncentrosymmetric Re(24)Nb(5) compound can be characterized as a weakly coupled BCS-type superconductor.
Novel approach towards 2-substituted aminobenzimidazoles on imidazolium ion tag under focused microwave irradiation
(2011-08-26)
Chanda, Kaushik
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Maiti, Barnali
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Chung, Wen-Sheng
;
Sun, Chung-Ming
;
應用化學系
We have developed an efficient, parallel synthesis of 2-substituted aminobenzimidazoles via intramolecular ring closing reactions of imidazolium ion tag immobilized o-phenylenediamine with various isothiocyanates. The methodology is based on the attachment of 4-fluoro-3-nitro benzoic acid into the imidazolium ion tag, which enables the S(N)Ar reactions with different amines followed by neutral reduction to furnish o-phenylenediamines under microwave irradiation. The substituted isothiocyanates are reacted with o-phenylenediamines to form monothiourea, which is further activated by methyl iodide to undergo desulfurization in one pot manner. The ionic liquid bound 2-substituted aminobenzimidazoles were finally cleaved from the support with sodium methoxide to generate target compounds in good yields and high purities with two points of structural diversity. This synthetic protocol has promising features of extremely short reaction time, operational simplicity, good yields, as well as widespread applications, leading to a facile and straightforward admittance to structurally diverse 2-substituted aminobenzimidazole analogues with potential bioactivities. (C) 2011 Elsevier Ltd. All rights reserved.
Photoactivation studies of zinc protoporphyrin-myoglobin system and its application for light-chemical energy conversion
(2011-08-28)
Wu, Tung-Kung
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生物科技學系
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Department of Biological Science and Technology
Genotoxicity of safrole oxide in HEPG2 cells and in mice
(2011-08-28)
Chiang, S.
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Lee, P.
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Shen, L.
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Huang, H.
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Chung, W.
Organic photovoltaics incorporating new fulleroisoquinolinones and fulleroindolines as n-type materials: Syntheses and performance studies
(2011-08-28)
Chuang, Shih-Ching
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Chen, Chih-Ping
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應用化學系
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Department of Applied Chemistry
Three-component and alpha-Michael reaction of phosphines with En-ynes and aldehydes: Formation of gamma-lactones featuring alpha-phosphorus ylides
(2011-08-28)
Deng, Jie-Cheng
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Chuang, Shih-Ching
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應用化學系
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Department of Applied Chemistry
Assembling and crystallization of amino acids and proteins by intense laser irradiation in solution
(2011-08-28)
Masuhara, Hiroshi
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Sugiyama, Teruki
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Yuyama, Ken-ichi
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Uwada, Takayuki
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Miura, Atsushi
Exploring combinatorial potential of K-252c biosynthesis by precursor-directed enzyme-coupling reactions
(2011-08-28)
Chiu, Hsien-Tai
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Chen, Yi-Lin
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Lin, Yu-Chin
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Lee, Meng-Na
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生物科技學系
Investigation for coexistence of dual resistive switching characteristics in DyMn(2)O(5) memory devices
(2011-08-29)
Tsai, Yu-Ting
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Chang, Ting-Chang
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Huang, Wei-Li
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Huang, Chih-Wen
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Syu, Yong-En
Dual bipolar resistive switching characteristics were observed in the Pt/DyMn(2)O(5)/TiN memory devices. The typical switching effect could be attributed to the formation and rupture of the conducting filament in DyMn(2)O(5) films. The parasitic switching behavior can be observed in the specific operation condition. Dual bipolar resistance switching behaviors of filament-type and interface-type can coexist in the devices by appropriate voltage operation. The operating current can be significantly decreased (100 times) by parasitic switching operation for portable electronic product application. In addition, the relationship between filament-type and interface-type switching behaviors were studied in this paper. (C) 2011 American Institute of Physics. [doi:10.1063/1.3629788]
Cost-effective 33-Gbps intensity modulation direct detection multi-band OFDM LR-PON system employing a 10-GHz-based transceiver
(2011-08-29)
Hsu, Dar-Zu
;
Wei, Chia-Chien
;
Chen, Hsing-Yu
;
Li, Wei-Yuan
;
Chen, Jyehong
We develop a dynamic multi-band OFDM subcarrier allocation scheme to fully utilize the available bandwidth under the restriction of dispersion-and chirp-related power fading. The experimental results successfully demonstrate an intensity-modulation-direct-detection 34.78-Gbps OFDM signal transmissions over 100-km long-reach (LR) passive-optical networks (PONs) based on a cost-effective 10-GHz EAM and a 10-GHz PIN. Considering 0-100-km transmission bandwidth of a 10-GHz EAM, the narrowest bandwidth is theoretically evaluated to occur at similar to 40 km, instead of 100 km. Consequently, the performances of 20-100-km PONs are experimentally investigated, and at least 33-Gbps capacity is achieved to support LR-PONs of all possible 20-100-km radii. (C) 2010 Optical Society of America
Investigation for coexistence of dual resistive switching characteristics in DyMn2O5 memory devices
(2011-08-29)
Tsai, Yu-Ting
;
Chang, Ting-Chang
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Huang, Wei-Li
;
Huang, Chih-Wen
;
Syu, Yong-En
Dual bipolar resistive switching characteristics were observed in the Pt/DyMn2O5/TiN memory devices. The typical switching effect could be attributed to the formation and rupture of the conducting filament in DyMn2O5 films. The parasitic switching behavior can be observed in the specific operation condition. Dual bipolar resistance switching behaviors of filament-type and interface-type can coexist in the devices by appropriate voltage operation. The operating current can be significantly decreased (100 times) by parasitic switching operation for portable electronic product application. In addition, the relationship between filament-type and interface-type switching behaviors were studied in this paper. (C) 2011 American Institute of Physics. [doi:10.1063/1.3629788]
Detailed balance model for intermediate band solar cells with photon conservation
(2011-08-29)
Lin, Chien-chung
;
Liu, Wei-Ling
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Shih, Ching-Yu
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光電系統研究所
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Institute of Photonic System
We developed a comprehensive detailed balance model of intermediate band solar cell (IBSC). The key feature of our model is based on the conservation of photons in solar spectrum. Together with parametric analysis of carrier partition, we calculated the power conversion efficiency and found an enhancement of 1.5 times in wide band gap material IBSC (such as GaN). On the other hand, this model can also explain the inferior performance of GaAs-based IBSC through the degradation of open-circuit voltages, which can be attributed to the strong non-radiative recombination and the increased photo-generated carriers. The resulting maximum efficiency is complied with the classical Shockley-Queisser limit, and should be considered for the future IBSC design. (C) 2011 Optical Society of America
Holographic information recording and reproducing apparatus for the same
(2011-08-30)
Hsieh Mei Li
;
Lin Shiuan Huei
;
Wang Jui Hsin
;
Hsu Ken Yuh
;
Chiang Don Yau
In a holographic information recording and reproducing apparatus, an optical fiber guides a reference beam toward a recording medium for holographic recording, and a precision rotator is turned, so that the reference beam is incident on the recording medium at different angles and interferes with a data-carrying signal beam to complete the recording of holographic information on the recording medium. To reproduce the holographic information, the optical fiber guides a reading beam, and the reading beam is incident on the recording medium at an angle the same as the reference beam for the recording to reproduce the holographic information stored on the recording medium. With the optical fiber and the precision rotator, a simplified light path system and a wide range of incident angles for the reference and reading beams may be achieved, and the transmissive, reflective, and 90-degree holographic storage techniques may be integrated in one single apparatus.
Soluble phenanthrenyl imidazole for photo-electrical conversion of solar cell
(2011-08-30)
Wei Kung-Hwa
;
Chang Yao-Te
A novel material of phenanthrenyl imidazole is applied to a solar cell. A phenanthrenyl-imidazole moiety is introduced to reduce a power band of a polymer, so that a photocurrent and an optoelectrical transformation efficiency are improved. Thus, a polymer having the novel material is very suitable to be used in a solar cell to acquire a high optoelectrical transformation efficiency.