Browsing by Issue Date, starting with "2011-08-29"

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Investigation for coexistence of dual resistive switching characteristics in DyMn(2)O(5) memory devices
(2011-08-29)
Tsai, Yu-Ting
;
Chang, Ting-Chang
;
Huang, Wei-Li
;
Huang, Chih-Wen
;
Syu, Yong-En
Dual bipolar resistive switching characteristics were observed in the Pt/DyMn(2)O(5)/TiN memory devices. The typical switching effect could be attributed to the formation and rupture of the conducting filament in DyMn(2)O(5) films. The parasitic switching behavior can be observed in the specific operation condition. Dual bipolar resistance switching behaviors of filament-type and interface-type can coexist in the devices by appropriate voltage operation. The operating current can be significantly decreased (100 times) by parasitic switching operation for portable electronic product application. In addition, the relationship between filament-type and interface-type switching behaviors were studied in this paper. (C) 2011 American Institute of Physics. [doi:10.1063/1.3629788]
Cost-effective 33-Gbps intensity modulation direct detection multi-band OFDM LR-PON system employing a 10-GHz-based transceiver
(2011-08-29)
Hsu, Dar-Zu
;
Wei, Chia-Chien
;
Chen, Hsing-Yu
;
Li, Wei-Yuan
;
Chen, Jyehong
We develop a dynamic multi-band OFDM subcarrier allocation scheme to fully utilize the available bandwidth under the restriction of dispersion-and chirp-related power fading. The experimental results successfully demonstrate an intensity-modulation-direct-detection 34.78-Gbps OFDM signal transmissions over 100-km long-reach (LR) passive-optical networks (PONs) based on a cost-effective 10-GHz EAM and a 10-GHz PIN. Considering 0-100-km transmission bandwidth of a 10-GHz EAM, the narrowest bandwidth is theoretically evaluated to occur at similar to 40 km, instead of 100 km. Consequently, the performances of 20-100-km PONs are experimentally investigated, and at least 33-Gbps capacity is achieved to support LR-PONs of all possible 20-100-km radii. (C) 2010 Optical Society of America
Investigation for coexistence of dual resistive switching characteristics in DyMn2O5 memory devices
(2011-08-29)
Tsai, Yu-Ting
;
Chang, Ting-Chang
;
Huang, Wei-Li
;
Huang, Chih-Wen
;
Syu, Yong-En
Dual bipolar resistive switching characteristics were observed in the Pt/DyMn2O5/TiN memory devices. The typical switching effect could be attributed to the formation and rupture of the conducting filament in DyMn2O5 films. The parasitic switching behavior can be observed in the specific operation condition. Dual bipolar resistance switching behaviors of filament-type and interface-type can coexist in the devices by appropriate voltage operation. The operating current can be significantly decreased (100 times) by parasitic switching operation for portable electronic product application. In addition, the relationship between filament-type and interface-type switching behaviors were studied in this paper. (C) 2011 American Institute of Physics. [doi:10.1063/1.3629788]
Detailed balance model for intermediate band solar cells with photon conservation
(2011-08-29)
Lin, Chien-chung
;
Liu, Wei-Ling
;
Shih, Ching-Yu
;
光電系統研究所
;
Institute of Photonic System
We developed a comprehensive detailed balance model of intermediate band solar cell (IBSC). The key feature of our model is based on the conservation of photons in solar spectrum. Together with parametric analysis of carrier partition, we calculated the power conversion efficiency and found an enhancement of 1.5 times in wide band gap material IBSC (such as GaN). On the other hand, this model can also explain the inferior performance of GaAs-based IBSC through the degradation of open-circuit voltages, which can be attributed to the strong non-radiative recombination and the increased photo-generated carriers. The resulting maximum efficiency is complied with the classical Shockley-Queisser limit, and should be considered for the future IBSC design. (C) 2011 Optical Society of America
Holographic information recording and reproducing apparatus for the same
(2011-08-30)
Hsieh Mei Li
;
Lin Shiuan Huei
;
Wang Jui Hsin
;
Hsu Ken Yuh
;
Chiang Don Yau
In a holographic information recording and reproducing apparatus, an optical fiber guides a reference beam toward a recording medium for holographic recording, and a precision rotator is turned, so that the reference beam is incident on the recording medium at different angles and interferes with a data-carrying signal beam to complete the recording of holographic information on the recording medium. To reproduce the holographic information, the optical fiber guides a reading beam, and the reading beam is incident on the recording medium at an angle the same as the reference beam for the recording to reproduce the holographic information stored on the recording medium. With the optical fiber and the precision rotator, a simplified light path system and a wide range of incident angles for the reference and reading beams may be achieved, and the transmissive, reflective, and 90-degree holographic storage techniques may be integrated in one single apparatus.
Soluble phenanthrenyl imidazole for photo-electrical conversion of solar cell
(2011-08-30)
Wei Kung-Hwa
;
Chang Yao-Te
A novel material of phenanthrenyl imidazole is applied to a solar cell. A phenanthrenyl-imidazole moiety is introduced to reduce a power band of a polymer, so that a photocurrent and an optoelectrical transformation efficiency are improved. Thus, a polymer having the novel material is very suitable to be used in a solar cell to acquire a high optoelectrical transformation efficiency.
基督新教與西拉雅族的第一次接觸：論荷蘭亞米紐斯主義者在福爾摩莎的傳教事工（1627-1643）
(國立陽明交通大學出版社, 2011-09-01)
張孝慧
為了發展在中國、日本與東南亞的貿易，聯合東印度公司於西元1624年登陸大員（今台南安平）。荷蘭人原本的目的只是以大員為貿易據點，無意統治福爾摩莎全島。然而，入主大員之後，福爾摩莎肥沃的土地、豐盛的漁獲量及鹿產，吸引聯合東印度公司著手經營福爾摩莎。經營此島的首要工作就是與靠近大員一帶的原住民－西拉雅族－維繫友好關係，同時培養人力。這份任務落在由聯合東印度公司派遣至福爾摩莎的傳教士肩上，基督新教因此傳入福爾摩莎。受歐洲宗教改革的影響，荷蘭本國於17世紀仍有許多基督教義之爭；其中亞米紐斯主義與加爾文主義的爭論深深影響傳教士在福爾摩莎的傳教事工。1627至1643年赴福爾摩莎的傳教士多為亞米紐斯主義者。此一時期，傳教士認為自己必須學習原住民的語言，為他們創造一套羅馬拼音的文字，進而帶領他們認識基督信仰。在學習文字的同時，西拉雅族閱讀了基督教義文本，接受基督信仰的人口比例不斷提高，甚至有全村受浸成為基督徒的案例。筆者將分別考察荷蘭人與西拉雅族的宗教與文化背景，分析其中異同，並且輔以漢人為參照對象，探究原住民歸信基督教的過程以及在17世紀的福爾摩莎形成的一種原－荷融合的文化。
Critical-Trunk-Based Obstacle-Avoiding Rectilinear Steiner Tree Routings and Buffer Insertion for Delay and Slack Optimization
(2011-09-01)
Lin, Yen-Hung
;
Chang, Shu-Hsin
;
Li, Yih-Lang
;
交大名義發表
;
National Chiao Tung University
For modern designs, delay optimization significantly facilitates success in design closure owing to its more realistic metric than wirelength in routing. Obstacle-avoiding rectilinear Steiner tree (OARST) construction is an essential routing problem. With the trends toward Internet protocol-block-based system-on-chip designs, OARST with buffer insertion has been surveyed to diminish the delay of long wires. Previous works on performance-driven (PD) OARST without and with buffer insertion can only handle small circuits. This paper develops a novel routing algorithm in obstacle-avoiding spanning graph to construct OARST with optimized delay efficiently. The proposed multisource single-target maze routing is first employed to identify the critical trunks, and the critical-trunk-based tree growth mechanism connects the unconnected pins to critical trunks under delay constraints of every sink. We apply the proposed critical-trunk-based tree growth mechanism to solve PD and slack-driven (SD) OARST problems. The proposed algorithms are extended to consider buffer insertion during PD and SD OARST constructions. Experimental results demonstrate that the proposed algorithms achieve an average 25.84% improvement in the maximum delay over obstacle-avoiding rectilinear Steiner minimal tree in the PD OARST problem and successfully solve 66.67% worst negative slack violations in the SD OARST problem. Compared to the simultaneous routing and buffer insertion approach, the proposed buffer-aware (BA) algorithm generates satisfactory timing results with almost identical wire length (WL). Moreover, the proposed BA SD OARST algorithm utilizes less WL than the BA rectilinear Steiner tree construction does by 17.99% on average. The runtime comparison with previous works shows the efficiency and scalability of this paper.
Bargaining framework for competitive green supply chains under governmental financial intervention
(2011-09-01)
Sheu, Jiuh-Biing
;
運輸與物流管理系註：原交通所+運管所
;
Department of Transportation and Logistics Management
This work investigates the problem of negotiations between producers and reverse-logistics (RL) suppliers for cooperative agreements under government intervention. Utilizing the asymmetrical Nash bargaining game with uncertainties, this work seeks equilibrium negotiation solutions to player agendas. Analytical results indicate that financial intervention by a government generates a significant effect on the relative bargaining power of green supply chain members in negotiations. Over intervention by a government may result in adverse effects on chain members' profits and social welfare. Furthermore, a bargaining framework underlying the duopoly-oligopoly context may contribute to a negotiation outcome most profitable for green supply chain members. (C) 2011 Elsevier Ltd. All rights reserved.
Geometrically induced stress singularities in a piezoelectric body of revolution
(2011-09-01)
Huang, C. S.
;
Hu, C. N.
;
土木工程學系
;
Department of Civil Engineering
An eigenfunction expansion approach is combined with a power series solution technique to establish the asymptotic solutions for geometrically induced electroelastic singularities in a piezoelectric body of revolution, with its direction of polarization not parallel to the axis of revolution. The asymptotic solutions are obtained by directly solving the three-dimensional equilibrium and Maxwell's equations in terms of displacement components and electric potential. When the direction of polarization is not along the axis of revolution, the assumption of axisymmetric deformation that is often made in the published literature is not valid, and the direction of polarization and the circular coordinate variable can substantially affect the singularities. The numerical results related to singularity orders are shown in graphical form for bodies of revolution that comprise a single material (PZT-4 or PZT-5H) or bonded piezo/piezo (PZT-4/PZT-5H) or piezo/isotropic elastic (PZT-4/Al or PZT-5H/Al) materials. This is the first study to present results for the direction of polarization not along the axis of revolution. (C) 2011 Elsevier Ltd. All rights reserved.
Using differential SAR interferometry to map land subsidence: a case study in the Pingtung Plain of SW Taiwan
(2011-09-01)
Hsieh, Chia-Sheng
;
Shih, Tian-Yuan
;
Hu, Jyr-Ching
;
Tung, Hsin
;
Huang, Mong-Han
Synthetic aperture radar (SAR) interferometry (InSAR) is a geodetic tool widely applied in the studies of earth-surface deformation. This technique has the benefits of high spatial resolution and centimetre-scale accuracy. Differential SAR interferometry (DInSAR) is used to measure ground deformation with repeat-pass SAR images. This study applied DInSAR and persistent scatterers InSAR (PSInSAR) for detecting land subsidence in the Pingtung Plain, southern Taiwan, between 1995 and 2000. In recent years, serious land subsidence occurred along coastal regions of Taiwan as a consequence of over-pumping of underground water. Results of this study revealed that the critical subsidence region is located on the coast near the estuary of Linpien River. It is also found that subsidence was significantly higher during the dry season than the wet season. The maximum annual subsidence rate of the dry season is up to -11.51 cm/year in critical subsidence region and the vertical land movement rate is much slower during the wet season. The average subsidence rates in wet and dry seasons are -0.31 and -3.37 cm/year, respectively. As a result, the subsidence rate in dry seasons is about 3 cm larger than in wet seasons.
污名的比較：殘障與性
(國立陽明交通大學出版社, 2011-09-01)
海澀愛
影像式指向方向之偵測系統及方法
(2011-09-01)
傅智銘
;
黃仲陵
;
簡敬宇
本發明提供一種影像式指向方向之偵測系統及方法，其係以兩台或以上之影像擷取器擷取使用者之數張指向媒介物之影像，如徒手手臂或原子筆之長條狀物體，並以一處理器對擷取之數張指向媒介物影像進行影像處理，機率運算，以穩定的定位出空間中目標位置的三維座標。本發明不需使用任何定位手套或標記手套即可偵測出使用者指向空間中之任意目標點，並且可於工作空間中任意走動也可保持高辨析度及高穩定度，可應用於簡報系統中，作為取代雷射筆或滑鼠之人機介面，或使用於空間中家用電器之指向使用。
Committee Independence and Financial Institution Performance during the 2007-08 Credit Crunch: Evidence from a Multi-country Study
(2011-09-01)
Yeh, Yin-Hua
;
Chung, Huimin
;
Liu, Chih-Liang
;
資訊管理與財務金融系註：原資管所+財金所
;
Department of Information Management and Finance
Manuscript Type: Empirical Research Question/Issue: Using the data of the 20 largest financial institutions from G8 countries, we explore whether the performance is higher for financial institutions with more independent directors on different committees during the 2007-08 financial crisis. We also examine the moderating effect of a country-level civil law dummy and firm-level excessive risk-taking behaviors on the independence-performance relationships. Research Findings/Insights: The empirical evidence shows that the performance during the crisis period is higher for financial institutions with more independent directors on auditing and risk committees. The influence of committee independence on the performance is particularly stronger for civil law countries. In addition, the independence-performance relationships are more significant in financial institutions with excessive risk-taking behaviors. Theoretical/Academic Implications: Our findings complement existing works to partially resolve the independence-performance relationship controversies by exploring the independence of different committees. The moderating effects of civil law countries and excessive risk-taking firms further address the governance environment's role in the effectiveness of director independence. Practitioner/Policy Implications: Our results provide important policy implications for financial institutions. The regulation authorities should enhance regulation compliance to improve director independence, particularly for auditing and risk committees in banking industry. Independent directors in the banking industry are supposed to put more emphasis on excessive risk-taking behaviors, as the financial institutions profit from risk-bearing earnings.
Optimizing hole-injection in organic electroluminescent devices by modifying CuPc/NPB interface
(2011-09-01)
Jiang, Meng-Dan
;
Lee, Pei-Yu
;
Chiu, Tien-Lung
;
Lin, Hong-Cheu
;
Lee, Jiun-Haw
This investigation discusses the performance of an organic light-emitting device (OLED) with ultraviolet (UV) illuminated and remote pulsed Ar plasma (RPAP), treated copper phthalcyanine (CuPc) thin film on an indium tin oxide anode as the hole-blocking layer. UV treatment increased the driving voltage, the current efficiency decreased at the same time due to the poor sticking probability of NPB on the CuPc surface. By contrast, the driving voltage reduction and current efficiency enhancement were achieved at the same time for the OLED with the RPAP treated CuPc. Besides this, in such device, the thickness of CuPc affects seldom the current density-voltage-luminance characteristics. The surface characteristics of these processed CuPc thin films were investigated by using atomic force microscope, contact angle and X-ray photoelectron spectroscopy measurements, which showed the CuPc/, N,N'-bis-(1-naphthyl)-N,N'-dipheny1-1,1'-bipheny1-4,4'-diamine (NPB) interface was crucial to not only the interface energy barrier, but also the following NPB growth, mode. (C) 2011 Elsevier B.V. All rights reserved.
Nitric Acid Oxidized ZrO2 as the Tunneling Oxide of Cobalt Silicide Nanocrystal Memory Devices
(2011-09-01)
Hu, Chih-Wei
;
Chang, Ting-Chang
;
Tu, Chun-Hao
;
Chen, Yang-Dong
;
Lin, Chao-Cheng
In this study, ZrO2 formed by the nitric acid oxidation method is proposed to be the tunneling oxide for nonvolatile memory device applications. The sputtered Zr thin film was oxidized by immersing in the nitric acid solution (HNO3:H2O = 1:10) for 60 s at room temperature. The quality of the formed ZrO2 was also extracted by the capacitance-voltage and current density-voltage measurements. Then, X-ray photoelectron spectroscopy has been used to confirm that the deposited Zr can be oxidized completely after the oxidation process. Moreover, a CoSi2 thin film was deposited on the nitric acid oxidized ZrO2 as the self-assembled layer of the memory device. After the device fabrication, the electrical and material characteristics of the CoSi2 nanocrystal memory devices have also been demonstrated and discussed.
Regression Analysis for Recurrent Events Data under Dependent Censoring
(2011-09-01)
Hsieh, Jin-Jian
;
Ding, A. Adam
;
Wang, Weijing
;
統計學研究所
;
Institute of Statistics
Recurrent events data are commonly seen in longitudinal follow-up studies. Dependent censoring often occurs due to death or exclusion from the study related to the disease process. In this article, we assume flexible marginal regression models on the recurrence process and the dependent censoring time without specifying their dependence structure. The proposed model generalizes the approach by Ghosh and Lin (2003, Biometrics 59, 877-885). The technique of artificial censoring provides a way to maintain the homogeneity of the hypothetical error variables under dependent censoring. Here we propose to apply this technique to two Gehan-type statistics. One considers only order information for pairs whereas the other utilizes additional information of observed censoring times available for recurrence data. A model-checking procedure is also proposed to assess the adequacy of the fitted model. The proposed estimators have good asymptotic properties. Their finite-sample performances are examined via simulations. Finally, the proposed methods are applied to analyze the AIDS linked to the intravenous experiences cohort data.
2011年寒假宜蘭南澳口衛隊
(國立陽明大學, 2011-09)
何昕
;
謝秉舟
作為論壇的艾未未
(國立陽明交通大學出版社, 2011-09-01)
徐明瀚
New Low-Leakage Power-Rail ESD Clamp Circuit in a 65-nm Low-Voltage CMOS Process
(2011-09-01)
Ker, Ming-Dou
;
Chiu, Po-Yen
;
電機學院
;
College of Electrical and Computer Engineering
A new low-leakage power-rail electrostatic discharge (ESD) clamp circuit designed with consideration of the gate leakage issue has been proposed and verified in a 65-nm low-voltage CMOS process. Consisting of the new low-leakage ESD-detection circuit and the ESD clamp device of a substrate-triggered silicon-controlled rectifier, the new proposed power-rail ESD clamp circuit realized with only thin-oxide (1-V) devices has a very low leakage current of only 116 nA at room temperature (25 degrees C) under the power-supply voltage of 1 V. Moreover, the new proposed power-rail ESD clamp circuit can achieve ESD robustness of over 8 kV, 800 V, and over 2 kV in human-body-model, machine-model, and charged-device-model ESD tests, respectively.