Browsing by Issue Date, starting with "2011-11-21"

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光鉗裝置及系統
(2011-11-21)
趙昌博
;
施凱騰
;
丘祺緯
本發明提供一種光鉗，其包含一光源、一準直器以及一變焦透鏡。該光源能產生一光束，並且透過一光纖傳遞該光束。該準直器固定於該光纖之一端，用以修正該光束成為一平行光束。此外，該變焦透鏡則固定於該準直器之一表面上，用以接收該平行光束，並且將該平行光束聚焦於至少一微小樣本上。
Superior local conductivity in self-organized nanodots on indium-tin-oxide films induced by femtosecond laser pulses
(2011-11-21)
Wang, Chih
;
Wang, Hsuan-I
;
Tang, Wei-Tsung
;
Luo, Chih-Wei
;
Kobayashi, Takayoshi
Large-area surface ripple structures of indium-tin-oxide films, composed of self-organized nanodots, were induced by femtosecond laser pulses, without scanning. The multi-periodic spacing (similar to 800 nm, similar to 400 nm and similar to 200 nm) was observed in the laser-induced ripple of ITO films. The local conductivity of ITO films is significantly higher, by approximately 30 times, than that of the as-deposited ITO films, due to the formation of these nanodots. Such a significant change can be ascribed to the formation of indium metal-like clusters, which appear as budges of similar to 5 nm height, due to an effective volume increase after breaking the In-O to form In-In bonding. (C) 2011 Optical Society of America
半導體發光元件及其製作方法
(2011-11-21)
邱清華
;
黃泓文
;
郭浩中
;
盧廷昌
;
王興宗
一種半導體發光元件，包含一基板、一形成於該基板上的p型半導體層、一形成於該p型半導體層上的發光層，及一形成於該發光層上的n型半導體層；在該n型半導體層表面形成有多數個垂直於該基板方向且深度不小於0.2微米的奈米柱體。藉由加深該等奈米柱體的深度，可以改變該半導體發光元件的發光場型，而提昇該半導體發光元件的正向出光強度及發光效率。
交大e-News第106期
(2011-11-21)
Secretariat
;
國立交通大學秘書室
Direct observation of two-color pulse dynamics in passively synchronized Er and Yb mode-locked fiber lasers
(2011-11-21)
Hsiang, Wei-Wei
;
Chiao, Wei-Chih
;
Wu, Chia-Yi
;
Lai, Yinchieh
;
光電工程學系
We report direct experimental observation of interesting pulse synchronization dynamics in a cavity-combined Er and Yb mode-locked fiber lasers by measuring the relative position between the two-color pulses in the shared fiber section. The influence of the 1.03 mu m pulse on the 1.56 mu m single pulse as well as bound soliton pairs can be clearly identified as an effective phase modulation through the XPM effect with the walk-off effect taken into account. For the 1.56 mu m single pulse under synchronization, the dependence of the relative position variation and the center wavelength shift on the cavity mismatch detuning is found analogous to the typical characteristics of FM mode-locked lasers with modulation frequency detuning. Moreover, depending on the cavity mismatch, the passively synchronized 1.56 mu m bound soliton pairs are found to exhibit two different dynamical behaviors, i.e., phase-locked (in-phase) as well as non-phase-locked. The physical origins for these two kinds of bound soliton pairs are investigated experimentally by disclosing their locations with respective to the copropagating 1.03 mu m pulse. (C) 2011 Optical Society of America
Ladder-Type Nonacyclic Structure Consisting of Alternate Thiophene and Benzene Units for Efficient Conventional and Inverted Organic Photovoltaics
(2011-11-22)
Cheng, Yen-Ju
;
Chen, Chiu-Hsiang
;
Lin, Yu-Shun
;
Chang, Chih-Yu
;
Hsu, Chain-Shu
A ladder-type nonacyclic thienyl-phenylene-thienylene-phenylene-thienyl TPTPT unit, consisting of alternate interfused thiophene and benzene units, is designed and synthesized. This multifused distannyl-TPTPT monomer was polymerized with two electron-deficient acceptors, 4,7-dibromo-2,1,3-benzothiadiazole BT and 5,8-dibromo-2,3-diphenylquinoxaline QX monomers, by Stile coupling reaction to afford two alternating donor acceptor copolymers, PTPTPTBT and PTPTPTQX, respectively. Because of the covalent planarization of the conjugated framework, PTPTPTBT simultaneously possess excellent solubilities for solution-processability, low bandgaps with suitable position of HOMO/LUMO energy levels, and high hole mobilities. The devices based on the PTPTPTBT/PC(71)BM blend not only showed a promising PCE of 5.3% with conventional configuration but also achieved a high PCE of 5.9% with inverted configuration. This value is among the highest performance from the inverted solar cells incorporating a donor acceptor low bandgap polymer.
Chemically Doped and Cross-linked Hole-Transporting Materials as an Efficient Anode Buffer Layer for Polymer Solar Cells
(2011-11-22)
Sun, Ying
;
Chien, Shang-Chieh
;
Yip, Hin-Lap
;
Zhang, Yong
;
Chen, Kung-Shih
A series of cross-linkable hole-transporting materials (X-HTMs) consisting of indacenodithiophene, bithiophene, and thiophene units bookended by two triarylamine groups have been designed and synthesized to investigate their suitability as new anode buffer layer for bulk heterojunction polymer solar cells (PSCs). These X-HTMs can be thermally cross-linked at temperature between 150 and 180 C to form robust, solvent-resistant films for subsequent spin-coating of another upper layer. Energy levels of these cross-linked materials were measured by cyclic voltammetry, and the data suggest that these X-HTMs have desirable hole-collecting and electron-blocking abilities to function as an anode buffer layer for PSCs. In addition, by incorporating thiophene or fused ring units into the X-HTM backbone, it effectively improved the hole-carrier motilities. To further improve the conductivity and optical transparency for PSCs, the X-HTM films were p-doped with nitrosonium hexafluoroantimonate (NOSbF(6)). The doped X-HTM layers showed remarkably enhanced hole-current densities compared to neutral X-HTM under the same electric field bias. The properties of the doped X-HTM film as anode buffer layer has been investigated in PSCs. The resulting devices showed similar performance compared to those made using conducting polymer, poly(3,4-ethylene- dioxylenethiophene):poly(styrenesulfonate) (PEDOT:PSS), as the anode buffer layer. Moreover, a novel bilayer HTM structure consisting of a doped and a neutral layer was employed to exploit the feasibility of combining high conductivity from the doped X-HTM and good electron-blocking ability from the neutral X-HTM together. Interestingly, PSC devices based on this bilayer structure showed enhanced V(oc), J(sc), and FF compared to the devices with only a single-layer doped X-HTM. These results indicate that such X-HTMs are promising alternative materials to PEDOT:PSS as an anode buffer layer for polymer solar cells.
Branched alpha-(1,4) Glucans from Lentinula edodes (L10) in Combination with Radiation Enhance Cytotoxic Effect on Human Lung Adenocarcinoma through the Toll-like Receptor 4 Mediated Induction of THP-1 Differentiation/Activation
(2011-11-23)
Lo, Tiffany Chien-Ting
;
Hsu, Feng-Ming
;
Chang, C. Allen
;
Cheng, Jason Chia-Hsein
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生物科技學系
This work investigated the role of structure in the binding of polysaccharides from 10 regionally different strains of Lentinula edodes to Toll-like receptor 4 (TLR-4) on monocytes (THP-1) and the potential effect of this interaction on tumor cell viability. Principal component analysis and multiple linear regression identified arabinose, glucose 1 -> 4 linkage, and molecular weights about 2700 and 534 kDa as the significant determinant factors associated with TLR-4 binding activity. The branched alpha-(1,4)-glucan (L10) had the strongest ability to bind to TLR-4 and induce THP-1 cell differentiation. L10 induction of the THP-1 cell differentiation, superoxide production, and cytokine production followed the TLR-4/MyD88/IKK/NF kappa B pathway. Coculture of irradiated human lung adenocarcinoma A549 cells with L10-activated THP-1 cells resulted in significantly decreased percentage of viable A549 cells from 66 to 37% (p = 0.018), increased levels of superoxide, interleukin-8, and RANTES, and decreased levels of angiogenin and vascular endothelial growth factor. The results indicate that L10-activated monocytes have the potential to boost the antitumor immune response and antitumor activity of radiotherapy.
Nitrogen Plasma-Assisted Codoped P-type (In, N):SnO(2) Ultra-Fine Thin Films and N-ZnO/p-In:SnO(2) Core-Shell Heterojunction Diodes Fabricated by an Ultrasonic Spray Pyrolysis Method
(2011-11-24)
Chantarat, N.
;
Chen, Yu-Wei
;
Lin, Chin-Ching
;
Chiang, Mei-Ching
;
Chen, Yu-Chun
In this study, tin oxide (SnO(2)) solution mixtures containing indium (In) of 0%, 3%, 7%, 15%, and 30% were used to fabricate In- and N-codoped SnO(2) films on glass at 400 degrees C using an ultrasonic spray pyrolysis method combined with thermal annealing at 600 degrees C and post nitrogen plasma treatment. X-ray diffraction analysis demonstrated that the incorporation of elemental In in the SnO(2) film primarily induces the evolution of crystalline phases from In-doped SnO(2) to Sn-doped In(2)O(3), depending on the doping concentration. Upon exposure to N plasma, the dark current dramatically increases in proportion to the treatment duration (5-40 min); the dark current can be enhanced for the 3% and 7%-doped samples by as much as 3 orders of magnitude compared to the untreated samples. Hall measurements confirmed that hole carriers could dominate the SnO(2) host matrix to promote p-type properties at a low In content (3% and 7%) with an increase in resistance compared to undoped samples. However, samples with higher In content (15% and 30%) showed the opposite trend, due to the formation of a secondary phase of n-type In(2)O(3). X-ray photoelectron spectroscopy was used to probe the incorporation and dissociation of chemical bonds between the doped In and N atoms in the SnO(2). Moreover, depth profile measurements showed a correlation between the elemental compositions and elemental distributions of the codoped SnO(2) film. Current-voltage (I-V) characterization revealed the improved behavior of heterojunction diodes consisting of a p-type (In, N)-doped SnO(2) thin film deposited on n-type ZnO nanorod arrays.
Nitrogen Plasma-Assisted Codoped P-type (In, N):SnO2 Ultra-Fine Thin Films and N-ZnO/p-In:SnO2 Core-Shell Heterojunction Diodes Fabricated by an Ultrasonic Spray Pyrolysis Method
(2011-11-24)
Chantarat, N.
;
Chen, Yu-Wei
;
Lin, Chin-Ching
;
Chiang, Mei-Ching
;
Chen, Yu-Chun
In this study, tin oxide (SnO2) solution mixtures containing indium (In) of 0%, 3%, 7%, 15%, and 30% were used to fabricate In- and N-codoped SnO2 films on glass at 400 degrees C using an ultrasonic spray pyrolysis method combined with thermal annealing at 600 degrees C and post nitrogen plasma treatment. X-ray diffraction analysis demonstrated that the incorporation of elemental In in the SnO2 film primarily induces the evolution of crystalline phases from In-doped SnO2 to Sn-doped In2O3, depending on the doping concentration. Upon exposure to N plasma, the dark current dramatically increases in proportion to the treatment duration (5-40 min); the dark current can be enhanced for the 3% and 7%-doped samples by as much as 3 orders of magnitude compared to the untreated samples. Hall measurements confirmed that hole carriers could dominate the SnO2 host matrix to promote p-type properties at a low In content (3% and 7%) with an increase in resistance compared to undoped samples. However, samples with higher In content (15% and 30%) showed the opposite trend, due to the formation of a secondary phase of n-type In2O3. X-ray photoelectron spectroscopy was used to probe the incorporation and dissociation of chemical bonds between the doped In and N atoms in the SnO2. Moreover, depth profile measurements showed a correlation between the elemental compositions and elemental distributions of the codoped SnO2 film. Current-voltage (I-V) characterization revealed the improved behavior of heterojunction diodes consisting of a p-type (In, N)-doped SnO2 thin film deposited on n-type ZnO nanorod arrays.
VERTICAL TRANSISTOR AND A METHOD OF FABRICATING THE SAME
(2011-11-24)
Meng Hsin-Fei
;
Zan Hsiao-Wen
;
Chao Yu-Chiang
A vertical transistor and a method of fabricating the vertical transistor are provided. The vertical transistor has a substrate, a first electrode formed on the substrate, a first insulation layer formed on the first electrode, with a portion of the first electrode exposed from the first insulation layer and having a thickness greater than 50 nm and no more than 300 nm, a grid electrode formed on the first insulation layer, a semiconductor layer formed on the first electrode, and a second electrode formed on the semiconductor layer.
DYNAMIC CALIBRATION METHOD FOR SINGLE AND MULTIPLE VIDEO CAPTURE DEVICES
(2011-11-24)
CHEN I-HSIEN
;
WANG SHENG-JYH
The present invention discloses a dynamic calibration method for a single and multiple video capture devices. The present invention can acquire the variations of the pan angle and tilt angle of a single video capture device according to the displacement of the feature points between successive images. For a plurality of video capture devices, the present invention includes the epipolar-plane constraint between a plurality of video capture devices to achieve the goal of dynamical calibration. The calibration method in the present invention does not require specific calibration patterns or complicated correspondence of feature points, and can be applied to surveillance systems with wide-range coverage.
CONTEXT-BASED ADAPTIVE BINARY ARITHMETIC CODING (CABAC) DECODING DEVICE AND DECODING METHOD THEREOF
(2011-11-24)
CHANG Tian-Sheuan
;
Liao Yuan-Hsin
A context-based adaptive binary arithmetic coding (CABAC) decoding device and a coding method thereof are provided. The device comprises: a context memory address calculator, calculating an address identifying a memory location in a context model memory for storage of a context model in next cycle; a mixed context memory, in which the context model of the context memory address calculator is stored and from which the context model is read; a two-bin context adaptive binary arithmetic decoder, outputting several parameters for updating the range and offset of the context model, based on the context model of the mixed context memory and deciding several bins; and a binary syntax element comparator, judging whether a current binary sequence corresponds to the value of syntax elements, based on the bins so as to select a correct memory address.
Self-assembly of an antireflective moth-like structure using antibody-functionalized nanowires and nanopore arrays
(2011-11-25)
Chen, Yu-Shiun
;
Hung, Ning
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Chou, Li-Jen
;
Chiou, Jin-Chern
;
Hong, Meng-Yen
A novel framework to fabricate moth-like nanopillar arrays was proposed. In this scheme, nanowires were first cross-linked with anti-gold nanoparticle (GNP) antibodies and mixed with the nanopore array pre-deposited by GNP, which was then followed by centrifugation. An optimal success rate of 95% was finally obtained by choosing nanorods with an aspect ratio of 5:1 by modifying with 10 ng mL(-1) antibodies, and by inserting them into a pore array pre-deposited with 54.4 mu M GNP. The nanopillar arrays thus fabricated showed high levels of antireflective efficiency across a broad wavelength. Here we demonstrate the assembly of nanowires and nanopores into nanopillar arrays by the assistance of antibody-antigen binding. The application of bio-nano-interaction provides an economic, time-saving, and throughput approach to manipulating objects on the nanoscale.
画素駆動回路とその駆動方法
(2011-11-25)
蔡明憲
;
戴亞翔
中庸之道的東亞社會
(2011-11-27)
胡哲揚
;
Department of Communication and Technology
;
傳播與科技學系
儒家中庸思想流傳已經千年，然而當今社會是否仍適用這套古人的智慧？
國片場景　粉絲朝聖地
(2011-11-27)
胡乃文
;
Department of Communication and Technology
;
傳播與科技學系
近年來台灣國片的表現越來越好，不僅票房亮眼，也得到許多國內外獎項的肯定，不少演員更因而爆紅。除此之外，國片的熱潮也帶動觀光產業，許多電影中的場景都變成粉絲的「朝聖」之地。
失戀告解　A-Lin黃麗玲
(2011-11-27)
賴映秀
;
Department of Communication and Technology
;
傳播與科技學系
感情的每個階段，都有著不同的心情，不變的是A-Lin具有溫度與力量的嗓音，陪著熱戀的人感動，伴著失戀的人哭泣。
紅土攻防　熱戰大專盃
(2011-11-27)
許雅筑
;
Department of Communication and Technology
;
傳播與科技學系
100學年度大專棒球聯賽預賽從11月19號起，在全台各地陸續點燃戰火。球員們無不使出渾身解數，教練們也拿出經驗與智慧，希望能在預賽突破重圍，進軍下學期的決賽。
台灣水資源
(2011-11-27)
陳奕儒
;
Department of Communication and Technology
;
傳播與科技學系
台灣的雨量豐沛，但因為地形狹長，山多平原少，所以能停留在島上的水資源不多。