Browsing by Issue Date, starting with "2012-08-21"

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一種噻吩衍生物高分子與其製備方法
(2012-08-21)
韋光華
;
張耀德
本發明係提供一種噻吩衍生物高分子與其製備方法，其特徵在於該噻吩衍生物高分子的至少一側鏈含有己基－菲基－1,3－二氮雜茂基團，其末端則具有至少一己基官能基。此噻吩衍生物高分子在太陽能電池的應用上與[6,6]－苯基－C61－丁酸甲酯([6,6]－phenyl－C61－butyric acid methyl ester,PCBM)掺混，可提升高分子的溶解度及高分子之電荷快速分離，有效提高光電轉換效率。
Document processing system and method thereof
(2012-08-21)
Lee Chia-Hoang
;
Liao Zan-Wei
In a document processing system and a document processing method, the document processing method includes the steps of: obtaining a document and dividing the document into a plurality of terms and giving a syntactic index to each of the terms; dividing the document into a plurality of sentences; selecting a key syntactic index from the syntactic indexes, and transforming each of the sentences into a preliminary key terms sequence which includes a preliminary key term corresponding to the key syntactic indexes according to the key syntactic indexes; selectively expanding the preliminary key term of a representative sentence of the document into an advanced key term; and determining at least one core candidate sentence among the sentences to generate a core abstract of the document according to the preliminary key terms and the advanced key term.
基於位置影像資料與位置資訊之查詢系統、查詢方法及建立方法
(2012-08-21)
曹孝櫟
;
林政龍
;
林冠儒
;
陳薪中
本發明係揭露一種基於位置影像資料與位置資訊之資料查詢系統及查詢方法，其係包括一行動擷取裝置與一遠端伺服裝置。其中，行動擷取裝置透過一傳輸模組以提供一空間參數及一鏡頭參數予遠端伺服裝置。遠端伺服裝置以此空間參數及鏡頭參數決定出一查詢空間範圍，並查詢出物件空間位置參數位於該查詢空間範圍之物件資料，於該行動擷取裝置顯示的影像資料上標記物件資料，以便利使用者選取決定欲觀看之物件，進一步查詢物件資料及相關影像資料。同時，本發明再提供一種基於位置影像資料及位置資訊的資料建立方法，本方法利用至少一第一建立資料與一第二建立資料。根據該些建立資料所提供之空間參數及鏡頭參數之交集，建立一對應之物件資料。
Probing the bulk electronic states of Bi2Se3 using nuclear magnetic resonance
(2012-08-21)
Young, Ben-Li
;
Lai, Zong-Yo
;
Xu, Zhijun
;
Yang, Alina
;
Gu, G. D.
We report a nuclear magnetic resonance (NMR) study of Bi2Se3 single crystals grown by three different methods. All the crystals show nine well-resolved peaks in their Bi-209 NMR spectra of the nuclear quadrupolar splitting, albeit with an intensity anomaly. Spectra at different crystal orientations confirm that all the peaks are purely from the nuclear quadrupolar effect, with no other hidden peaks. We identify the short nuclear transverse relaxation time (T-2) effect as the main cause of the intensity anomaly. We also show that the Bi-209 signal originates exclusively from bulk, while the contribution from the topological surface states is too weak to be detected by NMR. However, the bulk electronic structure in these single crystals is not the same, as identified by the NMR frequency shift and nuclear spin-lattice relaxation rate (1/T-1). The difference is caused by the different structural defect levels. We find that the frequency shift and 1/T-1 are smaller in samples with fewer defects and a lower carrier concentration. Also, the low-temperature power law of the temperature-dependent 1/T-1 (proportional to T-alpha) changes from the Korringa behavior alpha = 1 in a highly degenerate semiconductor (where the electrons obey Fermi statistics) to alpha < 1 in a less degenerate semiconductor (where the electrons obey Boltzmann statistics).
Planar antenna and electromagnetic band gap structure thereof
(2012-08-21)
Chung Shyh-Jong
;
Ling Ching-Wei
;
Yang Tzu-Hsien
An electromagnetic band-gap structure includes a circuit board, a ground plane and a plurality of electromagnetic band-gap units. The circuit board includes a first side and a second surface, and the ground plane disposed on the first side. The plurality of electromagnetic band-gap units are located on both the first surface and the second surface and connected to each other along an edge of the ground plane. Every electromagnetic band-gap unit includes a first strip line, a second strip line and a via. The first strip line is located on the first side, including a first relative long strip line and a first relative short strip line connected to the ground. The second strip line is located on the second side. The second strip line is connected to the first strip line of the adjacent electromagnetic band-gap unit through the via.
Study of InN epitaxial films and nanorods grown on GaN template by RF-MOMBE
(2012-08-21)
Chen, Wei-Chun
;
Kuo, Shou-Yi
;
Wang, Wei-Lin
;
Tian, Jr-Sheng
;
Lin, Woei-Tyng
This paper reports on high-quality InN materials prepared on a GaN template using radio-frequency metalorganic molecular beam epitaxy. We also discuss the structural and electro-optical properties of InN nanorods/films. The X-ray diffraction peaks of InN(0002) and InN(0004) were identified from their spectra, indicating that the (0001)-oriented hexagonal InN was epitaxially grown on the GaN template. Scanning electron microscopic images of the surface morphology revealed a two-dimensional growth at a rate of approximately 0.85 mu m/h. Cross-sectional transmission electron microscopy images identified a sharp InN/GaN interface and a clear epitaxial orientation relationship of [0001](InN) // [0001](GaN) and ((2) over bar 110)(InN) // ((2) over bar 110)(GaN). The optical properties of wurtzite InN nanorods were determined according to the photoluminescence, revealing a band gap of 0.77 eV.
多載波系統之通道估計方法
(2012-08-21)
洪崑健
;
林大衛
本發明係提供一種多載波系統之通道估計方法，係利用有限領航訊號取得導引子載波之通道響應，接著利用內插法運算解出資料子載波通道，藉此，更快速地估算出資料子載波的通道響應。本發明係用少數領航訊號進行通道估計，以更低運算量之方法精確地估算出各種通道延遲參數(如：初始延遲、平均延遲及均方根延遲擴散)，且本方法適用性廣，不需要配合特定功率延遲輪廓(power delay profile，PDP)，亦適用導引子載波配置不規則之通道。
Method for manufacturing optoelectronic memory device
(2012-08-21)
Wei Kung-Hwa
;
Sheu Jeng-Tzong
;
Chen Chen-Chia
;
Chiu Mao-Yuan
The present invention provides an optoelectronic memory device, the method for manufacturing and evaluating the same. The optoelectronic memory device according to the present invention includes a substrate, an insulation layer, an active layer, source electrode and drain electrode. The substrate includes a gate, and the insulation layer is formed on the substrate. The active layer is formed on the insulation layer, and more particularly, the active layer is formed of a composite material comprising conjugated conductive polymers and quantum dots. Moreover, both of the source and the drain are formed on the insulation layer, and electrically connected to the active layer.
THREE-DIMENSIONAL OBLIQUE MICROSTRUCTURE WITH PRESS DOWN AND ENGAGEMENT MECHANISMS
(2012-08-23)
Chiu Yi
;
Shih Hsi-Fu
;
Lin Chen-An
A three-dimensional oblique microstructure with press down and engagement mechanisms. A pair of corresponding first lugs is disposed on the both sides of the oblique body, and the bottom part of the oblique body has a first push pad. A pair of corresponding second lugs respectively disposed on the inner sides of the two supports of the α-shaped supporting rack, a second push pad is disposed on the bottom part of the U-shaped supporting rack. Thus, by pressing down the first and the second push pad, the oblique body rotates through the first twist bar and the U-shaped supporting rack rotates through the second twist bar so as to engage the first lugs with the second lugs, such that the three-dimensional microstructures with different angles can be packed to satisfy the needs of varied optical platform applications, and simplify semiconductor fabrication for higher production efficiency and product yield.
OPTICAL PICKUP HEAD
(2012-08-23)
CHIU Yi
;
Shih Hsi-Fu
;
Lin Chen-An
An optical pickup head is provided, which includes a silicon substrate, in which an aperture and an objective lens are disposed on the silicon substrate; and a laser diode (LD), a 135-degree tilted reflector, and a 135-degree tilted holographic reflector are disposed on the silicon substrate. The two 135-degree tilted reflectors and a holographic optical element (HOE) are fabricated on a slant face structure of an optical platform using a semiconductor process, so all the elements are disposed at a straight zone, and then in combination with bonding of the LD and an optical sensor element, an miniaturization objective is achieved and an optical path is shortened.
Observation of Raman Optical Activity by Heterodyne-Detected Polarization-Resolved Coherent Anti-Stokes Raman Scattering
(2012-08-24)
Hiramatsu, Kotaro
;
Okuno, Masanari
;
Kano, Hideaki
;
Leproux, Philippe
;
Couderc, Vincent
We report the first observation of Raman optical activity (ROA) by coherent anti-Stokes Raman scattering. Thanks to the more freedom of polarization configurations in coherent anti-Stokes Raman scattering than in spontaneous Raman spectroscopy, the contrast ratio of the chiral signal to the achiral background has been improved markedly. For (-)-beta-pinene, it is 2 orders of magnitude better than that in the reported spontaneous ROA measurement. This is also the first measurement of ROA signal using a pulsed laser source.
Circular Permutation Prediction Reveals a Viable Backbone Disconnection for Split Proteins: An Approach in Identifying a New Functional Split Intein
(2012-08-24)
Lee, Yun-Tzai
;
Su, Tz-Hsiang
;
Lo, Wei-Cheng
;
Lyu, Ping-Chiang
;
Sue, Shih-Che
Split-protein systems have emerged as a powerful tool for detecting biomolecular interactions and reporting biological reactions. However, reliable methods for identifying viable split sites are still unavailable. In this study, we demonstrated the feasibility that valid circular permutation (CP) sites in proteins have the potential to act as split sites and that CP prediction can be used to search for internal permissive sites for creating new split proteins. Using a protein ligase, intein, as a model, CP predictor facilitated the creation of circular permutants in which backbone opening imposes the least detrimental effects on intein folding. We screened a series of predicted intein CPs and identified stable and native-fold CPs. When the valid CP sites were introduced as split sites, there was a reduction in folding enthalpy caused by the new backbone opening; however, the coincident loss in entropy was sufficient to be compensated, yielding a favorable free energy for self-association. Since split intein is exploited in protein semi-synthesis, we tested the related protein trans-splicing (PTS) activities of the corresponding split inteins. Notably, a novel functional split intein composed of the N-terminal 36 residues combined with the remaining C-terminal fragment was identified. Its PTS activity was shown to be better than current reported two-piece intein with a short N-terminal segment. Thus, the incorporation of in silico CP prediction facilitated the design of split intein as well as circular permutants.
Nanosurface design of dental implants for improved cell growth and function
(2012-08-24)
Pan, Hsu-An
;
Hung, Yao-Ching
;
Chiou, Jin-Chern
;
Tai, Shih-Ming
;
Chen, Hsin-Hung
A strategy was proposed for the topological design of dental implants based on an in vitro survey of optimized nanodot structures. An in vitro survey was performed using nanodot arrays with dot diameters ranging from 10 to 200 nm. MG63 osteoblasts were seeded on nanodot arrays and cultured for 3 days. Cell number, percentage undergoing apoptotic-like cell death, cell adhesion and cytoskeletal organization were evaluated. Nanodots with a diameter of approximately 50 nm enhanced cell number by 44%, minimized apoptotic-like cell death to 2.7%, promoted a 30% increase in microfilament bundles and maximized cell adhesion with a 73% increase in focal adhesions. An enhancement of about 50% in mineralization was observed, determined by von Kossa staining and by Alizarin Red S staining. Therefore, we provide a complete range of nanosurfaces for growing osteoblasts to discriminate their nanoscale environment. Nanodot arrays present an opportunity to positively and negatively modulate cell behavior and maturation. Our results suggest a topological approach which is beneficial for the design of dental implants.
Quasi-nonvolatile storage in Ru-doped Bi12SiO20 crystals by two-wavelength holography
(2012-08-27)
Marinova, Vera
;
Liu, Ren Chung
;
Lin, Shiuan Huei
;
Hsu, Ken Yuh
;
電子物理學系
Prolonged read-out process of a hologram recorded at near infrared with simultaneous green light exposure is measured in Ru-doped Bi12SiO20 crystal. The experimental results are confirmed by numerical simulations, suggesting two different traps involved in the space-charge transport mechanism. In addition, quasi-permanent holographic recording of image with fast updating speed by using two-wavelength recording is demonstrated. (C) 2012 Optical Society of America
An experimental investigation of electrically induced-birefringence of Kerr effect in polymer-stabilized blue phase liquid crystals resulting from orientations of liquid crystals
(2012-08-27)
Chen, Hung-Shan
;
Ni, Shih-Ya
;
Lin, Yi-Hsin
;
光電工程學系
;
Department of Photonics
The electrically induced-birefringence (EIB) of Kerr effect of polymer-stabilized blue phase liquid crystals (PSBP-LCs) is experimentally investigated by discussing the orientations of liquid cryastal (LC) molecules. The results show that the EIB of Kerr effect of PSBP-LCs mainly results from the orientations of LC molecules when the voltage is larger than the voltage of disappearance of the lattice deformation; otherwise, lattice deformation is also involved in the contribution of EIB besides the orientations of LC molecules. This study proves that the orientations of liquid crystals indeed play roles in the EIB of Kerr effect in PSBP-LCs. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4748117]
High output current in vertical polymer space-charge-limited transistor induced by self-assembled monolayer
(2012-08-27)
Zan, Hsiao-Wen
;
Hsu, Yuan-Hsuan
;
Meng, Hsin-Fei
;
Huang, Chian-Hao
;
Tao, Yu-Tai
We present a promising solution-processed vertical transistor which exhibits high output current, high on/off current ratio, and low operation voltage. Numerous poly(3-hexylthiophene) vertical channels are embedded in vertical nanometer pores. Treating the sidewalls of pores by self-assemble monolayer with long alkyl chains enhances the pore-filling and inter-chain order of poly (3-hexylthiophene). The channel current is therefore greatly increased. A grid metal inside the porous template controls the channel potential profile to turn on and turn off the vertical transistor. Finally, the transistor delivers an output current density as 50-110 mA/cm(2) at 2V with an on/off current ratio larger than 10 000. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4748284]
Imbalanced initial populations between dark and bright states in semiconductor quantum dots
(2012-08-27)
Lin, Sheng-Di
;
Fu, Ying-Jhe
;
Cheng, Chun
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
We present the observation and analysis of long-lived exciton in individual InAs quantum dots (QDs). The general model considering the interplay between dark and bright states reveals the two key factors responsible for the long decay time: the shortened spin-flip time at elevated temperature and the imbalanced initial populations between the dark and bright states. The later one plays a key role in the unusual phenomena and leads to the possibility of spin-dependent relaxation process in QDs. (C) 2012 Optical Society of America
Determination of optimal converting point of color temperature conversion complied with ANSI C78. 377 for indoor solid-state lighting and display applications
(2012-08-27)
Hsieh, Yao-Fang
;
Ou-Yang, Mang
;
Huang, Ting-Wei
;
Lee, Cheng-Chung
;
電機資訊學士班
In recent years, displays and lighting require color temperature (CT) conversion function because observers have different preferences. This paper proposes effective methods to determine the optimal converting point of CT conversion for display and lighting application. For display application, the concepts of center of gravity and isotemperature line are applied to determine the optimal converting point. The maximal enhancement of luminance between the optimal and average is 18%. For lighting application, this paper proposes two methods to determine the optimal converting point in the CT quadrangle which complies with ANSI C78. 377. The enhancement of luminance in two CT modes (5700K and 6500K) are 14.2% and 23.6%, respectively. (C) 2012 Optical Society of America
Sub-wavelength GaN-based membrane high contrast grating reflectors
(2012-08-27)
Wu, Tzeng Tsong
;
Syu, Yu Cheng
;
Wu, Shu Hsien
;
Chen, Wei Ting
;
Lu, Tien Chang
The GaN-based membrane high contrast grating (HCG) reflectors have been fabricated and investigated. The structural parameters including grating periods, grating height, filling factors and air-gap height were calculated to realize high reflectivity spectra with broad bandwidth by the rigorous coupled-wave analysis and finite-difference time-domain method. Based on the optimized simulation results, the GaN-based membrane HCGs were fabricated by e-beam lithography and focused-ion beam process. The fabricated GaN-based membrane HCG reflectors revealed high reflectivity at 460 nm band with large stopband width of 60 nm in the TE polarization measured by using the micro-reflectivity spectrometer. The experimental results also showed a good agreement with simulated ones. We believe this study will be helpful for development of the GaN-based novel light emitting devices in the blue or UV region. (C) 2012 Optical Society of America
Infrared absorption of trans-1-chloromethylallyl and trans-1-methylallyl radicals produced in photochemical reactions of trans-1,3-butadiene and Cl-2 in solid para-hydrogen
(2012-08-28)
Bahou, Mohammed
;
Wu, Jen-Yu
;
Tanaka, Keiichi
;
Lee, Yuan-Pern
;
應用化學系
The reactions of chlorine and hydrogen atoms with trans-1,3-butadiene in solid para-hydrogen (p-H-2) were investigated with infrared (IR) absorption spectra. When a p-H-2 matrix containing Cl-2 and trans-1,3-butadiene was irradiated with ultraviolet light at 365 nm, intense lines at 650.3, 809.0, 962.2, 1240.6 cm(-1), and several weaker ones due to the trans-1-chloromethylallyl radical, center dot(CH2CHCH)CH2Cl, appeared. Observed wavenumbers and relative intensities agree with the anharmonic vibrational wavenumbers and IR intensities predicted with the B3PW91/6-311++g(2d,2p) method. That the Cl atom adds primarily to the terminal carbon atom of trans-1,3-butadiene is in agreement with the path of minimum energy predicted theoretically, but in contrast to the reaction of Cl + propene in solid p-H-2 [J. Amicangelo and Y.-P. Lee, J. Phys. Chem. Lett. 1, 2956 (2010)] in which the addition of Cl to the central C atom is favored, likely through steric effects in a p-H-2 matrix. A second set of lines, intense at 781.6, 957.9, 1433.6, 2968.8, 3023.5, 3107.3 cm(-1), were observed when the UV-irradiated Cl-2/trans-1,3-butadiene/p-H-2 matrix was further irradiated with IR light from a SiC source. These lines are assigned to the trans-1-methylallyl radical, center dot(CH2CHCH)CH3, produced from reaction of 1,3-butadiene with a H atom resulted from the reaction of Cl atoms with solid p-H-2 exposed to IR radiation. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4745075]