Browsing by Issue Date, starting with "2012-12-10"

Now showing 1 - 20 of 34709

Improved current distribution in resistive memory on flexible substrate using nitrogen-rich TaN electrode
(2012-12-10)
Zheng, Zhi-Wei
;
Cheng, Chun-Hu
;
Chou, Kun-I
;
Liu, Ming
;
Chin, Albert
Narrow current distribution, good endurance, and low 28 mu W switching power are successfully achieved in Ni/GeOx/TiOy/TaN resistive random access memory devices. The good distribution and endurance are attributed to the nitrogen-rich TaN to increase the oxidation resistance and decrease the TaON and oxygen vacancies formation from x-ray photoelectron spectroscopy measurements, where such oxygen vacancies are related to current conduction at high resistance state. In addition, the devices on the flexible polyimide substrate exhibit excellent mechanical endurance upon repeated bending tests, showing their high potential for low-cost flexible memory application. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4772003]
Tailoring thermopower of single-molecular junctions by temperature-induced surface reconstruction
(2012-12-10)
Hsu, Bailey C.
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Lin, Chiung-Yuan
;
Hsieh, Yau-Shian
;
Chen, Yu-Chang
;
電子物理學系
Recent experiments revealed that surface reconstruction occurs at around 300-400 K in the interface of C-60 adsorbed on Cu(111) substrate by scanning tunneling microscope techniques. To understand effects of such reconstruction on thermopower, we investigate the Seebeck coefficients of C-60 single-molecular junctions without and with surface reconstruction as a function of temperature at different tip-to-molecule heights from first-principles. Our calculations show that surface reconstruction can enhance or suppress Seebeck coefficients according to junctions at different tip heights. We further observe that the Seebeck coefficient of the junction at d = 3.4 angstrom may change from p- to n-type under surface reconstruction. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4769814]
Current induced localized domain wall oscillators in NiFe/Cu/NiFe submicron wires
(2012-12-10)
Chang, L. J.
;
Lin, Pang
;
Lee, S. F.
;
材料科學與工程學系
;
Department of Materials Science and Engineering
We experimentally demonstrate domain wall (DW) oscillators excited by in-plane ac current through permalloy based pseudo-spin valve wires, which contain one pair of artificial protrusions. By measuring the spin-transfer-torque induced resonance of a pinned antiparallel transverse DW, under transverse external fields, we show that the antiparallel transverse DW oscillates with a resonance frequency as high as 2.92 GHz, depending on the widths of protrusions. For DW oscillations induced by injection of dc currents, the observed peaks in dV/dI associated with the reversible change of magnetoresistance are attributed to the reversible motions of the DW. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4770306]
Lande subtraction method with finite integration limits and application to strong-field problems
(2012-12-11)
Jiang, Tsin-Fu
;
Jheng, Shih-Da
;
Lee, Yun-Min
;
Su, Zheng-Yao
;
物理研究所
The Lande subtraction method has been widely used in Coulomb problems, but the momentum coordinate p is an element of (0,infinity) is assumed. In past applications, a very large range of p was used for accuracy. We derive the supplementary formulation with p is an element of (0, p(max)) at reasonably small p(max) for practical calculations. With the recipe, accuracy of the hydrogenic eigenspectrum is dramatically improved compared to the ordinary Lande formula by the same momentum grids. We apply the present formulation to strong-field atomic above-threshold ionization and high-order harmonic generations. We demonstrate that the proposed momentum space method can be another practical theoretical tool for atomic strong-field problems in addition to the existing methods. DOI:10.1103/PhysRevE.86.066702
Synthesis, Molecular and Photovoltaic Properties of Donor-Acceptor Conjugated Polymers Incorporating a New Heptacylic Indacenodithieno[3,2-b]thiophene Arene
(2012-12-11)
Chang, Huan-Hsuan
;
Tsai, Che-En
;
Lai, Yu-Ying
;
Chiou, De-Yang
;
Hsu, So-Lin
We have developed a new multifused indacenodithieno[3,2-b]thiophene arene (IDTT) unit where the central phenylene is covalently fastened with the two outer thieno[3,2-b]thiophene (TT) rings, forming two cyclopentadiene rings embedded in a heptacyclic structure. This rigid and coplanar IDTT building block was copolymerized with electron-deficient acceptors, 4,7-dibromo-2,1,3-benzothiadiazole (BT), 4,7-dibromo-5,6-difluoro-2,1,3-benzothiadiazole (FBT) and 1,3-dibromo-thieno[3,4-c]pyrrole-4,6-dione (TPD) via Stifle polymerization, respectively. Because the higher content of the thienothiophene moieties in the fully coplanar IDTT structure facilitates pi-electron delocalization, these new polymers show much improved light-harvesting abilities and enhanced charge mobilities compared to PDITTBT copolymer using hexacyclic diindenothieno[3,2-b]thiophene (DITT) as the donor moieties. The device using PIDTTBT:PC71BM (1:4, w/w) exhibited a decent power conversion efficiency (PCE) of 3.8%. Meanwhile, the solar cell using PIDTTFBT:PC71BM (1:4 in wt %) blend exhibited a greater V-oc value of 0.9 V and a larger J(sc) of 10.08 mA/cm(2), improving the PCE to 4.2%. The enhanced V-oc is attributed to the lower-lying of HOMO energy level of PIDTTFBT as a result of fluorine withdrawing effect on the BT unit. A highest PCE of 4.3% was achieved for the device incorporating PIDTTTPD:PC71BM (1:4 in wt %) blend.
Universal brain systems for recognizing word shapes and handwriting gestures during reading
(2012-12-11)
Nakamura, Kimihiro
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Kuo, Wen-Jui
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Pegado, Felipe
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Cohen, Laurent
;
Tzeng, Ovid J. L.
Do the neural circuits for reading vary across culture? Reading of visually complex writing systems such as Chinese has been proposed to rely on areas outside the classical left-hemisphere network for alphabetic reading. Here, however, we show that, once potential confounds in cross-cultural comparisons are controlled for by presenting handwritten stimuli to both Chinese and French readers, the underlying network for visual word recognition may be more universal than previously suspected. Using functional magnetic resonance imaging in a semantic task with words written in cursive font, we demonstrate that two universal circuits, a shape recognition system (reading by eye) and a gesture recognition system (reading by hand), are similarly activated and show identical patterns of activation and repetition priming in the two language groups. These activations cover most of the brain regions previously associated with culture-specific tuning. Our results point to an extended reading network that invariably comprises the occipitotemporal visual word-form system, which is sensitive to well-formed static letter strings, and a distinct left premotor region, Exner's area, which is sensitive to the forward or backward direction with which cursive letters are dynamically presented. These findings suggest that cultural effects in reading merely modulate a fixed set of invariant macroscopic brain circuits, depending on surface features of orthographies.
多車道車輛偵測裝置
(2012-12-11)
莊晴光
;
張繼禾
本發明提供一種車輛偵測裝置，其採遠端交通微波偵測方式，可用於進行多車道之偵測。藉由本發明之設計，偵測裝置所偵測到之回波能量並不因車輛所在位置的遠近而產生明顯變化，因而本發明之車輛偵測裝置能夠在不同的目標距離下仍維持相當之偵測準確度，可實現現有微波偵測方式之偵測裝置所無法達到的多車道準確偵測。
暫態偵測電路
(2012-12-11)
柯明道
;
顏承正
;
廖期聖
;
陳東暘
一種暫態偵測電路，耦接於一第一電源線以及一第二電源線之間。該暫態偵測電路包括，一第一控制單元、一設定單元以及一穩壓單元。第一控制單元產生一第一控制信號。當一靜電放電事件發生時，該第一控制信號為一第一位準。當該靜電放電事件未發生時，該第一控制信號為一第二位準。設定單元用以設定一第一節點。當該第一控制信號為該第一位準，該第一節點被設定成該第二位準。穩壓單元用以維持該第一節點之位準。當該第一控制信號為該第二位準時，該第一節點被維持在該第二位準。
於矽基板上形成三族氮化物半導體磊晶層的方法
(2012-12-11)
張俊彥
;
楊宗熺
;
張哲榮
;
辜瑞泰
;
沈詩國
本發明為一種於矽基板上形成三族氮化物半導體磊晶層的方法，首先以氫氟酸溶液去除矽基板氧化物，再以高溫去除氟離子及污染物，產生平坦及重構之矽表面。接著以低溫沉積鋁原子層於矽基板上。在適當條件下，利用低射頻功率、低溫梯度變化等單一步驟同時形成單晶氮化矽絕緣層及氮化鋁成核層。且在富含鎵的條件下，以高溫成長氮化鎵層。
Address generation apparatus and method for quadratic permutation polynomial interleaver de-interleaver
(2012-12-11)
Lee Shuenn-Gi
;
Wang Chung-Hsuan
;
Sheen Wern-Ho
An address generation apparatus for a quadratic permutation polynomial (QPP) interleaver is provided. It comprises a basic recursive unit, and L recursive units represented by first recursive unit up to Lth recursive units. The apparatus inputs a plurality of configurable parameters according to a QPP function Π(i)=(f1i+f2i2) mod k, generates a plurality of interleaver addresses in serial via the basic recursive unit, and generates L groups of corresponding interleaver addresses via the first up to the Lth recursive units, wherein Π(i) is the i-th interleaver address generated by the apparatus, f1 and f2 are QPP coefficients, and k is information block length of an input sequence, 0≦i≦k−1.
Method for tracking and processing image
(2012-12-11)
Wu Bing-Fei
;
Chen Chao-Jung
;
Kao Chih-Chung
;
Chung Meng-Liang
;
Chiu Chung-Cheng
The invention relates to a method for image processing, which can be used to calibrate the background quickly. When the external environment is changed due to the switch of light, the color of background is calibrated quickly, and the background can be updated together. The method not only is used to update the background, but also can be used to eliminate the convergence of background again.
半導體電路與微探針感測元件的整合結構及其製造方法
(2012-12-11)
邱俊誠
;
張志瑋
一種半導體電路與微探針感測元件的整合結構及其製造方法，係於半導體基板一面製作半導體電路，另一面則直接蝕刻出供生理訊號感測之用的微探針構造，再利用沉積方法於微探針表面依序沉積絕緣層與導電層，最後，再使用導電材料電性連接半導體電路之電性連接墊與導電層，從而在同一片半導體基板兩面完成電路與微探針感測元件之整合，且解決了電性阻絕的問題，微探針所感測到的生理訊號準位將不會影響到半導體電路的正常工作。
Liquid crystal lens structure and method of driving same
(2012-12-11)
Lin Yi-Hsin
;
Lin Hung-Chun
A liquid crystal (LC) lens structure and a method of driving same are disclosed. The LC lens structure includes an upper substrate, a lower substrate, a liquid crystal and polymer composite film, and an LC layer. The upper substrate is provided with a first conducive layer and a first alignment layer; and the lower substrate is provided with a second conductive layer and a second alignment layer. The liquid crystal and polymer composite film is arranged at one side of the first alignment layer to form a first lens, and the LC layer is arranged between the liquid crystal and polymer composite film and the second alignment layer to form a second lens. By building the liquid crystal and polymer composite film in the LC lens structure, it is able to realize an LC lens with low operating voltage and large focusing range.
Mapping Band Alignment across Complex Oxide Heterointerfaces
(2012-12-12)
Huang, Bo-Chao
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Chiu, Ya-Ping
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Huang, Po-Cheng
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Wang, Wen-Ching
;
Vu Thanh Tra
In this study, direct observation of the evolution of electronic structures across complex oxide interfaces has been revealed in the LaAlO3/SrTiO3 model system using cross-sectional scanning tunneling microscopy and spectroscopy. The conduction and valence band structures across the LaAlO3/SrTiO3 interface are spatially resolved at the atomic level by measuring the local density of states. This study directly maps out the electronic reconstructions and a built-in electric field in the polar LaAlO3 layer. Results also clearly reveal the band bending and the notched band structure in the SrTiO3 adjacent to the interface. DOI: 10.1103/PhysRevLett.109.246807
A novel technique to fabricate 28 nm p-MOSFETs possessing gate oxide integrity on an embedded SiGe channel without silicon surface passivation
(2012-12-12)
Yu, M. H.
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Liao, M. H.
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Huang, T. C.
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Wang, L. T.
;
Lee, T. L.
A novel technique to create a suspending stacked gate oxide and subsequently to fill in an embedded SiGe channel (ESC) between the gate oxide and the underlying silicon substrate is proposed for the first time to fabricate 28 nm p-metal-oxide-semiconductor field-effect transistors (p-MOSFET). Without Si surface passivation on the ESC, such an ESC structure could achieve a p-FET transconductance (G(m)) gain of 26% higher and a better I-on-I-off performance gain of 8% than that of conventional strained Si p-FETs with the source/drain (S/D) SiGe. Better S/D resistance (R-sd) in the resistance versus gate length plot and improved swing slope of the I-d-V-gs plot indicates higher mobility in the ESC devices. Moreover, the off-state gate current of the ESC structure is also comparable to the conventional ones. From the x-ray photoelectron spectrum analysis, only the Si-O bonding, and no Ge-O bonding at the SiGe/SiO2 interface could account for this superior gate oxide integrity for the ESC and strained Si structure. Therefore, such a novel technique with an ESC structure is very promising for the 28 nm p-MOSFET devices era.
穿越時代變遷的見證：吳濁流的《無花果》
(2012-12-12)
洪銘水
;
開放教育推動中心
;
Open Education Office
課程首頁本課程是由交通大學新文藝復興閱讀計畫提供。 96 年 8 月當各大學紛紛摩拳擦掌準備迎接新生的同時，交通大學校長吳重雨則因為一則來自於七月份泰晤士報，有關於英國首相布朗公布其夏日讀書清單的新聞中，看到了他對知識的尊重。在這同時，吳重雨校長也思考著，要如何為學生準備追求知識的環境和激發他們對知識的尊重與喜愛。台積電張忠謀董事長曾陳述他 18 歲進入哈佛那一年，博覽文史哲理工經典群籍，至此奠定了他求知的基礎，並借海明威名言，將其改為「哈佛這一年為人生可帶走的盛宴。」吳重雨校長以張董事長的學習為借鏡，認為學生固然能藉由自我閱讀的方式學習到豐沛的知識，但透過名人、大師親臨現場地介紹經典書籍，更能加深學子們對於書籍的認識與興趣，這也是「新文藝復興閱讀計劃」 ( 以下簡稱 : 「經典名著選讀」 ) 活動展開籌劃的緣由。於是，吳重雨校長便積極敦請「交大通識教育委員會」，接手籌備本計劃的相關活動，而該中心也成為實際施行本計畫的策動、開課以及認證單位。至此，期許交大學子藉由閱讀、聽講來提昇人文素養、開拓視野的「新文藝復興閱讀計劃」，就此展開。
HIGH EFFICIENCY BUCK-BOOST POWER CONVERTER
(2012-12-13)
CHEN KE-HORNG
;
WU WEI-QUAN
;
HO HSIN-HSIN
A buck-boost power converter switches the switches thereof with a novel sequence and extends the switching periods of the switches to reduce the switching loss and conduction loss when the input voltage thereof approaches the output voltage thereof. The influence of the load current of the power converter on the duty thereof is taken into account to switch the power converter between modes at correct time points, so as to prevent the output voltage from being affected by the mode switching.
HETEROSTRUCTURE CONTAINING IC AND LED AND METHOD FOR FABRICATING THE SAME
(2012-12-13)
CHEN KUAN-NENG
;
KO CHENG-TA
;
LO WEI-CHUNG
A heterostructure contains an IC and an LED. An IC and an LED are initially provided. The IC has at least one first electric-conduction block and at least one first connection block. The IC electrically connects with the first electric-conduction block. The first face of the LED has at least one second electric-conduction block and at least one second connection block. The LED electrically connects to the second electric-conduction block. Subsequently, the first electric-conduction block and the first connection block are respectively joined to the second electric-conduction block and the second connection block. The first electric-conduction block is electrically connected with the second electric-conduction block and forms a heterostructure. The system simultaneously provides functions of heat radiation and electric communication for the IC and LED resulting in a high-density, multifunctional heterostructure.
Whole-genome sequencing and identification of Morganella morganii KT pathogenicity-related genes
(2012-12-13)
Chen, Yu-Tin
;
Peng, Hwei-Ling
;
Shia, Wei-Chung
;
Hsu, Fang-Rong
;
Ken, Chuian-Fu
Background: The opportunistic enterobacterium, Morganella morganii, which can cause bacteraemia, is the ninth most prevalent cause of clinical infections in patients at Changhua Christian Hospital, Taiwan. The KT strain of M. morganii was isolated during postoperative care of a cancer patient with a gallbladder stone who developed sepsis caused by bacteraemia. M. morganii is sometimes encountered in nosocomial settings and has been causally linked to catheter-associated bacteriuria, complex infections of the urinary and/or hepatobiliary tracts, wound infection, and septicaemia. M. morganii infection is associated with a high mortality rate, although most patients respond well to appropriate antibiotic therapy. To obtain insights into the genome biology of M. morganii and the mechanisms underlying its pathogenicity, we used Illumina technology to sequence the genome of the KT strain and compared its sequence with the genome sequences of related bacteria. Results: The 3,826,919-bp sequence contained in 58 contigs has a GC content of 51.15% and includes 3,565 protein-coding sequences, 72 tRNA genes, and 10 rRNA genes. The pathogenicity-related genes encode determinants of drug resistance, fimbrial adhesins, an IgA protease, haemolysins, ureases, and insecticidal and apoptotic toxins as well as proteins found in flagellae, the iron acquisition system, a type-3 secretion system (T3SS), and several two-component systems. Comparison with 14 genome sequences from other members of Enterobacteriaceae revealed different degrees of similarity to several systems found in M. morganii. The most striking similarities were found in the IS4 family of transposases, insecticidal toxins, T3SS components, and proteins required for ethanolamine use (eut operon) and cobalamin (vitamin B-12) biosynthesis. The eut operon and the gene cluster for cobalamin biosynthesis are not present in the other Proteeae genomes analysed. Moreover, organisation of the 19 genes of the eut operon differs from that found in the other non-Proteeae enterobacterial genomes. Conclusions: This is the first genome sequence of M. morganii, which is a clinically relevant pathogen. Comparative genome analysis revealed several pathogenicity-related genes and novel genes not found in the genomes of other members of Proteeae. Thus, the genome sequence of M. morganii provides important information concerning virulence and determinants of fitness in this pathogen.
Time-dependent universal conductance fluctuations in IrO2 nanowires
(2012-12-13)
Lin, Yong-Han
;
Wang, Lu-Yao
;
Lin, Juhn-Jong
;
電子物理學系
;
物理研究所
Single-crystalline iridium dioxide nanowires show the time-dependent universal conductance fluctuations (TUCFs) at cryogenic temperatures. The conductance fluctuations persist up to temperature T as high as nearly 10 K. The root-mean-square TUCF magnitudes increase with decreasing T, reaching approximately 0.1 e (2) / h at 1.7 K. We ascribe these conductance fluctuations to originating from the conduction electrons scattering upon mobile defects (moving scattering centers). Our measured TUCF characteristics are satisfactorily explained in terms of the existing TUCF theory in its three-dimensional form. The extracted electron dephasing length L (phi) (1.7 K) a parts per thousand integral 90 nm is smaller than the diameter (a parts per thousand 180 nm) of our nanowires.