Browsing by Issue Date, starting with "2013-02-11"

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具有氣泡之微流體系統及其氣體放電方法與氣體反應方法
(2013-02-11)
范士岡
;
蔡鈴濱
一種具有氣泡之微流體系統，包括：一第一電極板，其具有一第一基板及一第一電極層，該第一電極層包括多個連續鄰接的傳動電極；一第二電極板，其具有一第二基板及一第二電極層，該第一電極板與該第二電極板之間形成一空間；以及至少一種可移動地儲存於該空間內的液體，該液體中更形成一個密閉腔體，該密閉腔體中填充有一反應氣體以形成一氣泡；液體可受電場控制而移動，致以驅動氣泡移動，並可施加崩潰電壓，使氣泡中的氣體產生氣體放電。
Role of the cAMP-Dependent Carbon Catabolite Repression in Capsular Polysaccharide Biosynthesis in Klebsiella pneumoniae
(2013-02-11)
Lin, Ching-Ting
;
Chen, Yu-Ching
;
Jinn, Tzyy-Rong
;
Wu, Chien-Chen
;
Hong, Yi-Ming
K. pneumoniae is the predominant pathogen isolated from liver abscesses of diabetic patients in Asian countries. Although elevated blood glucose levels cause various immune problems, its effects on K. pneumoniae virulence are unknown. This study investigated the regulation of capsular polysaccharide (CPS) biosynthesis, a major determinant for K. pneumoniae virulence, in response to exogenous glucose. We found that K. pneumoniae produce more CPS in glucose-rich medium via reduction in cyclic AMP (cAMP) levels. Individual deletion of cyaA or crp, which respectively encode adenylate cyclase and cAMP receptor protein in K. pneumoniae, markedly increased CPS production, while deletion of cpdA, which encodes cAMP phosphodiesterase, decreased CPS production. These results indicate that K. pneumoniae CPS biosynthesis is controlled by the cAMP-dependent carbon catabolite repression (CCR). To investigate the underlying mechanism, quantitative real-time PCR and promoter-reporter assays were used to verify that the transcription of CPS biosynthesis genes, which are organized into 3 transcription units (orf1-2, orf3-15, and orf16-17), were activated by the deletion of crp. Sequence analysis revealed putative CRP binding sites located on Porf3-15 and Porf16-17, suggesting direct CRP-cAMP regulation on the promoters. These results were then confirmed by electrophoretic mobility shift assay. In addition, we found putative CRP binding sites located in the promoter region of rcsA, which encodes a cps transcriptional activator, demonstrating a direct repression of CRP-cAMP and P-rcsA. The deletion of rcsA in mutation of crp partially reduced CPS biosynthesis and the transcription of orf1-2 but not of orf3-15 or orf16-17. These results suggest that RcsA participates in the CRP-cAMP regulation of orf1-2 transcription and influences CPS biosynthesis. Finally, the effect of glucose and CCR proteins on CPS biosynthesis also reflects bacterial resistance to serum killing. We here provide evidence that K. pneumoniae increases CPS biosynthesis for successful infection in response to exogenous glucose via cAMP-dependent CCR.
產生可移除外殼之包覆式液滴的微流體系統及方法
(2013-02-11)
范士岡
;
許耀文
;
陳俊勳
一種產生可移除外殼之包覆式液滴的微流體系統，包括：兩電極板及設置於兩電極板之間的分隔結構，其中一個電極板具有三個儲液電極及多個流道電極，三個儲液電極分別用以置放一外殼液體、一內核液體及一可移除外殼液體的去殼液體，而流道電極用以聯絡三個儲液電極。藉此，該微流體系統可產生定量的外殼液滴及內核液滴，然後合併兩者以形成包覆式液滴。此外，包覆式液滴的外殼液滴可混合去殼液體而移除之。本發明另提出一種產生可移除外殼之包覆式液滴的方法。
Influence of structural anisotropy to anisotropic electron mobility in a-plane InN
(2013-02-11)
Ahn, H.
;
Chia, J. -W.
;
Lee, H. -M.
;
Gwo, S.
;
光電工程學系
This study reports on the anisotropic electron transport properties and a correlation between the electron mobility (mu) and the stacking faults (SFs) in the a-plane InN film. Electron mobilities measured by terahertz time-domain spectroscopy and Hall effect measurement along the in-plane [(1) over bar 100] (c(perpendicular to)) orientation were much higher than those of the in-plane [0001] (c(parallel to)) orientation. This result shows a sharp contrast to higher defect density for the c(perpendicular to) orientation as measured by x-ray diffraction. The electrons transporting through the planar SFs aligned along the c(perpendicular to) direction are expected to experience more scattering by defects, resulting in lower mu for the c(parallel to) orientation. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4792209]
以水溶液製備金屬氧化物薄膜之方法
(2013-02-11)
林偉祺
;
張立
本發明揭露一種以水溶液製備金屬氧化物薄膜之方法，可製備包含氧化鋅、氧化鋅摻雜鎂元素、氧化鋅摻雜銦元素、氧化鋁或其他金屬氧化物之薄膜。此方法包含將可溶於水之有機金屬或無機金屬化合物溶於去離子水中以形成第一金屬鹽水溶液；加入非離子型界面活性劑並攪拌均勻以得到澄清及穩定之第二金屬鹽水溶液；將此第二金屬鹽水溶液沉積於一基板層上；以適當溫度進行預烤及退火即得到此金屬氧化物薄膜。相較於習知技術在成長金屬氧化物薄膜製程中所使用之有機溶劑、安定劑及強酸等，本發明所提供之方法可減少金屬氧化物薄膜製程中對人體及環境有害物質之使用、降低製程成本且提升產業應用價值。
High performance InGaZnO thin film transistor with InGaZnO source and drain electrodes
(2013-02-11)
Wu, Hung-Chi
;
Chien, Chao-Hsin
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
This work demonstrates In-Ga-Zn-O (IGZO) as source and drain electrodes in IGZO-thin film transistors (TFTs). The fabricated TFT depicts excellent electrical properties; its mobility is 18.02 (cm(2)/V s), threshold voltage (Vth) is 0.3 (V), on/off ratio is 1.63 x 10(8) and subthreshold swing (S. S.) is 239 (mV/decade). We find using rapid thermal annealing treatment can convert IGZO into an effective conductor, and the transparency of IGZO remained almost unchanged. We also find sufficient thermal budget is needed for getting stable transfer curve and output characteristic; otherwise, current fluctuation in on-state can be easily observed. With IGZO electrodes, fully transparent IGZO-TFTs can be thus realized on a glass substrate. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4789997]
Stable and wavelength-tunable silicon-micro-ring-resonator based erbium-doped fiber laser
(2013-02-11)
Yang, L. G.
;
Yeh, C. H.
;
Wong, C. Y.
;
Chow, C. W.
;
Tseng, F. G.
In this work, we propose and demonstrate a stable and wavelength-tunable erbium-doped fiber (EDF) ring laser. Here, a silicon-on-insulator (SOI)-based silicon-micro-ring-resonator (SMRR) is used as the wavelength selective element inside the fiber ring cavity. A uniform period grating coupler (GC) is used to couple between the SMRR and single mode fiber (SMF) and serves also as a polarization dependent element in the cavity. The output lasing wavelength of the proposed fiber laser can be tuned at a tuning step of 2 nm (defined by the free spectral range (FSR) of the SMRR) in a bandwidth of 35.2 nm (1532.00 to 1567.20 nm), which is defined by the gain of the EDF. The optical-signal-to-noise-ratio (OSNR) of each lasing wavelength is larger than 42.0 dB. In addition, the output stabilities of power and wavelength are also discussed. (C) 2013 Optical Society of America
電容式觸控面板
(2013-02-11)
陳建廷
;
趙昌博
;
阮俊堯
一種電容式觸控面板，其利用導電圖案設計使上下層電極之電容值不會互相干擾，以進行三維電容偵測，進而達到雙面使用，並可在大尺寸觸控面板仍具有高靈敏度。
Optical cavity modes of a single crystalline zinc oxide microsphere
(2013-02-11)
Moirangthem, Rakesh Singh
;
Cheng, Pi-Ju
;
Chien, Paul Ching-Hang
;
Buu Trong Huynh Ngo
;
Chang, Shu-Wei
A detailed study on the optical cavity modes of zinc oxide microspheres under the optical excitation is presented. The zinc oxide microspheres with diameters ranging from 1.5 to 3.0 mu m are prepared using hydrothermal growth technique. The photoluminescence measurement of a single microsphere shows prominent resonances of whispering gallery modes at room temperature. The experimentally observed whispering gallery modes in the photoluminescence spectrum are compared with theoretical calculations using analytical and finite element methods in order to clarify resonance properties of these modes. The comparison between theoretical analysis and experiment suggests that the dielectric constant of the ZnO microsphere is somewhat different from that for bulk ZnO. The sharp resonances of whispering gallery modes in zinc oxide microspheres cover the entire visible window. They may be utilized in realizations of optical resonators, light emitting devices, and lasers for future chip integrations with micro/nano optoelectronic circuits, and developments of optical biosensors. (C) 2013 Optical Society of America
單電感多輸出電源轉換器及其控制方法
(2013-02-11)
陳科宏
;
黃銘信
一種單電感多輸出電源轉換器及其控制方法，包括一電感具有第一端及第二端，該電感的第一端連接該電源轉換器的輸入端，該電感的第二端在該電源轉換器的多個輸出端、該電源轉換器的輸入端及一接地端之間做切換。
Multilevel resistive switching memory with amorphous InGaZnO-based thin film
(2013-02-11)
Hsu, Ching-Hui
;
Fan, Yang-Shun
;
Liu, Po-Tsun
;
光電工程學系
;
顯示科技研究所
Multi-level storage capability of resistive random access memory (RRAM) using amorphous indium-gallium-zinc-oxide (InGaZnO) thin film is demonstrated by the TiN/Ti/InGaZnO/Pt device structure under different operation modes. The distinct four-level resistance states can be obtained by varying either the trigger voltage pulse or the compliance current. In addition, the RRAM devices exhibit superior characteristics of programming/erasing endurance and data retention for the application of multi-level nonvolatile memory technology. Physical transport mechanisms for the multi-level resistive switching characteristics are also deduced in this study. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4792316]
MEMS gyroscope
(2013-02-12)
Chen Tsung-Lin
;
Chi Chien-Yu
;
Lee Chia-Wei
An MEMS gyroscope is disclosed, capable of computing the rotating angle of a DUT being attached thereto without the need to execute an off-line calibration process, of precluding the execution of an integration process, and of executing an on-line compensation process for the error introduced by the sensing circuit defect and by the mechanical structure defect of its gyroscope module. The disclosed MEMS gyroscope comprises: a gyroscope module, a sensing module coupled with the gyroscope module, and a control module couple with the gyroscope module and the sensing module, respectively. The control module receives the system dynamic of the gyroscope module sensed by the sensing module, and applies a gyroscope control method for controlling the gyroscope module and computing the rotating angle of the DUT. Moreover, the control module outputs a control signal including two extra frequency signals, to the gyroscope module, for driving the gyroscope module into operation.
On-chip inductor structure and method for manufacturing the same
(2013-02-12)
Chao Tzu-Yuan
;
Hsu Ming-Chieh
;
Cheng Yu-Ting
;
Chen Chih
;
Lin Chien-Min
The present invention relates to a an on-chip inductor structure and a method for manufacturing the same. The an on-chip inductor structure according to the present invention comprises a substrate, a porous layer, a plurality of conductors, and an inductor. The porous layer is disposed on the substrate and has a plurality of voids; each of the plurality of conductors is disposed in the plurality of voids, respectively; and the inductor is disposed on the porous layer. Because the plurality of conductors is used as the core of the inductor, the inductance is increased effectively and the area of the an on-chip inductor is reduced. Besides the manufacturing method according to the present invention is simple and compatible with the current CMOS process, the manufacturing cost can be lowered.
WETTED WALL VENTURI SCRUBBER WITH A 2-STAGE VENTURI THROAT
(2013-02-14)
TSAI Chuen-Jinn
A venturi scrubber, which avoids clogging in the throat by dust particles, includes a venturi tube, two scrubbing fluid conduits and a scrubbing fluid tank. The venturi tube has a converging section, a diverging section and a throat section which is connected between the converging section and the diverging section. The scrubbing fluid conduit has a top end connected with the bottom end of the converging section of the venturi tube, and the scrubbing fluid conduit is connected with the scrubbing fluid tank. Thereby, scrubbing fluid can be guided directly into the scrubbing fluid tank without passing through the throat section. As a result, the clogging of dust particles on the converging section of the venturi throat can be minimized and the abnormal increase of the pressure drop of the throat can also be avoided.
METHOD FOR EXTRACTING THE FEATURE OF AN ABDOMINAL BREATHING AND A SYSTEM USING THE SAME
(2013-02-14)
Hsiao Tzu-Chien
;
Hsu Ju-Hsin
A method for extracting the feature of an abdominal breathing is disclosed, capable of extracting the feature of an abdominal breathing, without the requirement of a standard model of an abdominal breathing and the execution of a learning process being executed prior to the method for extracting the feature of an abdominal breathing. By means of computing a plurality of intrinsic mode functions corresponding to the abdominal breathing signal received, an Euler angle function and an instantaneous frequency function of each of the plurality of intrinsic mode functions, and comparing the plurality of instantaneous frequency function with a pre-determined zero-point threshold region, the method for extracting the feature of an abdominal breathing defines one of the plurality of instantaneous frequency function as an abdominal breathing feature function, which contains the feature of the abdominal breathing. In this way, the feature of an abdominal breathing is extracted.
TIME-TO DIGITAL CONVERTER AND DIGITAL-CONTROLLED CLOCK GENERATOR AND ALL-DIGITAL CLOCK GENERATOR
(2013-02-14)
Hsu Terng-Yin
;
Liao Yuan-Te
;
Su Kai-Shu
An all-digital clock generator includes a digitally-controlled clock generator and a processing unit. The digitally-controlled clock generator generates a clock signal in response to an enable signal and a digital signal. The processing unit has a frequency multiplier and a reference signal having a period, digitizes the period to generate a quantized signal, generates the digital signal according to the quantized signal and the frequency multiplier, and generates the enable signal according to the reference signal, the clock signal and the frequency multiplier.
METHOD FOR INHIBITING GROWTH OF INTERMETALLIC COMPOUNDS
(2013-02-14)
CHEN Chih
;
TU King-Ning
;
HSIAO Hsiang-Yao
The present invention relates to a method for inhibiting growth of intermetallic compounds, comprising the steps of: (i) preparing a substrate element including a substrate on which at least one layer of metal pad is deposited, wherein at least one thin layer of solder is deposited onto the layer of metal pad, and then carry out reflowing process; and (ii) further depositing a bump of solder with an appropriate thickness on the substrate element, characterized in that a thin intermetallic compound is formed by the reaction of the thin solder layer and the metal in the metal pad after appropriate heat treatment of the thin solder layer. In the present invention, the formation of a thin intermetallic compound is able to slow the growth of the intermetallic compound and to prevent the transformation of the intermetallic compounds.
MULTI-FILTER PM 10-PM 2.5 SAMPLER
(2013-02-14)
Tsai Chuen-Jinn
;
Liu Chun-Nan
A multi-filter PM 10-PM 2.5 sampler which enable the simultaneous collection of four PM 10 and four PM 2.5 samples is disclosed. The sampler is provided with a PM 10 impactor to remove coarse particles and operates at 33.4 L/min. After the PM 10 impactor, the aerosol flow is divided by half by a branch pipe. Half of the flow is directed into four PM 10 cassettes, while the other half is directed into four PM 2.5 cassettes after the aerosols are further classified by a PM 2.5 impactor. To ensure the aerosol flow uniformly passes through each of the four PM 10 or four PM 2.5 cassettes, an orifice plate is assembled behind each of the filter cassettes to increase the pressure drop, such that the flow rates of eight sampling lines are nearly equal.
MOVEMENT PREDICTING METHOD
(2013-02-14)
LIN Yi-Bing
;
Huang-Fu Chien-Chun
A movement predicting method is disclosed. The method utilizes at least one phone communicating in and moving between neighboring cells of base stations to predict population movement in a prediction interval. Firstly, obtain the traffic volumes in the cells generated by the phone and the handover information generated by the phone moving between the cells in a day. Next, calculate the traffic volumes and the handover information to obtain a movement probability for the population moving between the cells and an average residence time that the population stays in the region of each cell in the different periods of the day. Finally, according to the data obtained, predict an appearance probability that the population appears in each region at the end point of the prediction interval.
Delay Cell and Digitally Controlled Oscillator
(2013-02-14)
LEE Chen-Yi
;
YU Chien-Ying
;
YU Chia-Jung
A delay cell includes a first inverted transistor pair, a second inverted transistor pair and a plurality of delay units. The first inverted transistor pair is used to receive an input signal. The second inverted transistor pair is electrically cross-coupled to the first inverted transistor pair and cross-controlled by the first inverted transistor pair. The delay units are cascaded between the first inverted transistor pair and between the second inverted transistor pair, thereby providing a plurality of signal propagation delays sequentially, wherein the input signal is delayed for a pre-determined time by the first inverted transistor pair, the second inverted transistor pair and the delay units which are operated sequentially, thereby creating an output signal corresponding to the pre-determined time. A digitally controlled oscillator including the aforementioned delay cells is provided.