Browsing by Issue Date, starting with "2013-02-26"
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Item type:Item, Gate oxide breakdown-withstanding power switch structure(2013-02-26) ;Yang Hao-I ;Chuang Ching-TeHwang WeiThe present invention proposes a gate oxide breakdown-withstanding power switch structure, which is connected with an SRAM and comprises a first CMOS switch and a second CMOS switch respectively having different gate-oxide thicknesses or different threshold voltages. The CMOS switch, which has a normal gate-oxide thickness or a normal threshold voltage, provides current for the SRAM to wake up the SRAM from a standby or sleep mode to an active mode. The CMOS switch, which has a thicker gate-oxide thickness or a higher threshold voltage, provides current for the SRAM to work in an active mode. The present invention prevents a power switch from gate-oxide breakdown lest noise margin, stabilization and performance of SRAM be affected.Item type:Item, Single-axis-control-input gyroscope system having imperfection compensation(2013-02-26) ;Chen Tsung-Lin ;Chi Chien-YuLee Chia-WeiThe present invention proposes a single-axis-control-input gyroscope system having imperfection compensation, which comprises a gyroscope and a state observer. The gyroscope includes a mechanical structure, and the dynamic behavior of the mechanical structure is described with a plurality of system parameters and a plurality of dynamic equations. The system parameters include a mass of the gyroscope, two main-axis spring constants, a cross-axis spring constant, two main-axis damping coefficients, a cross-axis damping coefficient and an angular velocity. The mechanical imperfections cause the system parameters to deviate from the designed values and become unknown values. The gyroscope receives a single-axis control signal and outputs a plurality of gyroscopic system dynamics. The single-axis control signal includes at least two frequency signals. The state observer is coupled to the gyroscope to receive the gyroscopic system dynamics as the inputs thereof to feed back compensations to the state observer. Thereby is estimated an angular velocity.Item type:Item, Photonic crystal and method of fabricating the same(2013-02-26) ;Wu Pu-Wei ;Huang Yi-JuiLai Chun-HanA three-dimensional geometric photonic crystal and a method of fabricating the photonic crystal are disclosed. The photonic crystal includes a geometric structure having a plurality of electrophoretic self-assembled particles and the plurality of particles are periodically arranged at any cross sections of the geometric structure. The method includes preparing an electrophoresis deposition suspension, installing first and second electrodes in the electrophoresis deposition suspension with the first electrode being encircled by the second electrode, and applying a voltage to the first electrode and the second electrode to form an electric field between the first and second electrodes, such that particles in the electrophoresis deposition suspension are electrophoretic self-assembled, and a periodically arranged geometric structure is formed. A photonic crystal thus may have a three-dimensional geometric structure in any shape.Item type:Item, Bicyclic heteroaryl compounds(2013-02-26) ;Sun Chung-Ming ;Kuo Min-LiangTseng Yufeng JaneBicyclic heteroaryl compounds of formula (I) shown below are disclosed. Each variable in formula (I) is defined in the specification. Also disclosed is treatment of cancer with these compounds.Item type:Item, Structural and Electrical Properties of Conducting Diamond Nanowires(2013-02-27) ;Sankaran, Kamatchi Jothiramalingam ;Lin, Yen-Fu ;Jian, Wen-Bin ;Chen, Huang-ChinPanda, KalpataruConducting diamond nanowires (DNWs) films have been synthesized by N-2-based microwave plasma enhanced chemical vapor deposition. The incorporation of nitrogen into DNWs films is examined by C Is X-ray photoemission spectroscopy and morphology of DNWs is discerned using field-emission scanning electron microscopy and transmission electron microscopy (TEM). The electron diffraction pattern, the visible-Raman spectroscopy, and the near-edge X-ray absorption fine structure spectroscopy display the coexistence of sp(3) diamond and sp(2) graphitic phases in DNWs films. In addition, the microstructure investigation, carried out by high-resolution TEM with Fourier transformed pattern, indicates diamond grains and graphitic grain boundaries on surface of DNWs. The same result is confirmed by scanning tunneling microscopy and scanning tunneling spectroscopy (STS). Furthermore, the STS spectra of current-voltage curves discover a high tunneling current at the position near the graphitic grain boundaries. These highly conducting regimes of grain boundaries form effective electron paths and its transport mechanism is explained by the three-dimensional (3D) Mott's variable range hopping in a wide temperature from 300 to 20 K. Interestingly, this specific feature of high conducting grain boundaries of DNWs demonstrates a high efficiency in field emission and pave a way to the next generation of high-definition flat panel displays or plasma devices.Item type:Item, Fabrication of electrolyte supported micro-tubular SOFCs using extrusion and dip-coating(2013-02-27) ;Hsieh, Wen-Shuo ;Lin, Pang ;Wang, Sea-Fue ;材料科學與工程學系Department of Materials Science and EngineeringDense electrolyte supported micro tubular solid oxide fuel cells (T-SOFCs) were prepared in this study. Green Zr0.8Sc0.2O2 - delta (ScSZ) electrolyte micro-tubes with a thickness of 300 mu m were successfully prepared by extrusion at room temperature. After firing at 1400 degrees C, the bare electrolyte micro-tube with a thickness of 210 mu m, a diameter of 3.8 mm, and a length of 40 mm reached a relative density of 96.84% and a flexural strength of 202 MPa. To achieve a better sintering shrinkage match, the electrolyte micro-tubes were pre-sintered at 1100 degrees C, coated with NiO/ScSZ (60 vol.%:40 vol.%) in the inner surface of the microtubes by dip-coating method, and then co-fired at 1400 degrees C. After co-sintering, the interface of the porous anode layer and the dense electrolyte layer demonstrated good adhesion and mechanical integrity. Subsequently, a La0.8Sr0.2MnO3 - delta (LSM)/Ce0.8Gd0.2O2 - delta (GDC) (80 vol.%:20 vol.%) cathode layer was coated on the outer surface of the micro-tubes by dip-coating method and post-sintered at 1100 degrees C. The thicknesses of the anode and cathode layers read approximately 28 and 34 mu m respectively. After thermal cycling between 30 degrees C and 800 C under 97% N-2-3%H-2 on the anode and air on the cathode, the micro T-SOFCs showed no delamination and retained good adhesion based on the SEM results. The maximum power densities (MPD) of the single cell read 0.26 and 0.23 W cm(-2) respectively at 920 and 900 degrees C, and the open circuit voltage (OCV) reported the same 1.08 V. Copyright (C) 2012, Hydrogen Energy Publications, LLC. Published by Elsevier Ltd. All rights reserved.Item type:Item, 動亂紀實遺言二十年後--吳濁流的《台灣連翹》(2013-02-27) ;洪銘水 ;開放教育推動中心Open Education Office課程首頁 本課程是由交通大學新文藝復興閱讀計畫提供。 96 年 8 月當各大學紛紛摩拳擦掌準備迎接新生的同時,交通大學校長吳重雨則因為一則來自於七月份泰晤士報,有關於英國首相布朗公布其夏日讀書清單的新聞中,看到了他對知識的尊重。在這同時,吳重雨校長也思考著,要如何為學生準備追求知識的環境和激發他們對知識的尊重與喜愛。台積電張忠謀董事長曾陳述他 18 歲進入哈佛那一年,博覽文史哲理工經典群籍,至此奠定了他求知的基礎,並借海明威名言,將其改為「哈佛這一年為人生可帶走的盛宴。」吳重雨校長以張董事長的學習為借鏡,認為學生固然能藉由自我閱讀的方式學習到豐沛的知識,但透過名人、大師親臨現場地介紹經典書籍,更能加深學子們對於書籍的認識與興趣,這也是「新文藝復興閱讀計劃」 ( 以下簡稱 : 「 經典名著選讀 」 ) 活動展開籌劃的緣由。於是,吳重雨校長便積極敦請「交大通識教育委員會」,接手籌備本計劃的相關活動,而該中心也成為實際施行本計畫的策動、開課以及認證單位。至此,期許交大學子藉由閱讀、聽講來提昇人文素養、開拓視野的「新文藝復興閱讀計劃」,就此展開。Item type:Item, Dye-sensitized solar cells based on agarose gel electrolytes using allylimidazolium iodides and environmentally benign solvents(2013-02-28) ;Hsu, Hsin-Ling ;Tien, Cheng-Fang ;Yang, Ya-Ting ;Leu, Jihperng材料科學與工程學系Novel agarose gel electrolytes are prepared by allylimidazolium iodides-based ionic liquids and environmentally benign co-solvents (propylene carbonate (PC) and dimethyl sulfoxide (DMSO)) for dye-sensitized solar cells (DSSCs). Among 1-allyl-3-ethylimidadolium iodide (AEII), 1-allyl-3-propylimidazolium iodide (APII), 1-3-diallylimidazolium iodide (DAM, and 1-methyl-3-propylimidazolium iodide (MPII) ionic liquids, the agarose gel electrolyte containing AEII exhibits the best DSSC performance. The efficiency of the DSSC using the agarose gel electrolyte containing 1.5 M AEII and 0.65 wt% agarose is 5.89% with the highest I-3(-) diffusion coefficient of 7.7 x 10(-6) cm(2) s(-1). The performance of the AEII ionic liquid-based agarose gel electrolyte is comparable to the liquid electrolyte based on 3-methoxypropionitrile (MPN) (5.84%) under illumination at AM 1.5, 100 mW cm(-2). Moreover, the DSSC performance of the allylimidazolium iodides ionic liquid-based agarose electrolyte is determined by the interaction between ionic liquid and agarose, which affects the rigidity of the ion channels and the I-3(-) diffusion coefficient. (C) 2013 Elsevier Ltd. All rights reserved.Item type:Item, PRINTED FILTERING ANTENNA(2013-02-28) ;CHUNG Shyh-JongCHUANG Chao-TangA printed filtering antenna is provided. This filtering antenna comprises an antenna part and a coupled line resonator. The antenna part is directly connected to a coupled line resonator and occupies an antenna area. The coupled line resonator provides a filtering mechanism together with the antenna part. The coupled line resonator comprises a short-circuited stub and an open-circuited stub. The short-circuited stub comprises an open-circuited end and a short-circuited end connected to ground. The open-circuited stub is parallel to the short-circuited stub. The open-circuited stub comprises a first end o and a second end. The first end is connected to the feed point and is corresponding to the open-circuited end of the short-circuited stub such that the open-circuited stub is coupled to the short-circuited stub.Item type:Item, Sinter-free transferring of anodized TiO2 nanotube-array onto a flexible and transparent sheet for dye-sensitized solar cells(2013-02-28) ;Kuo, Yu-Yen ;Chien, Chao-Hsin ;電子工程學系及電子研究所Department of Electronics Engineering and Institute of ElectronicsA sinter-free method to transfer anodized TiO2 nanotube-arrays to a polyethylene terephthalate (PET) sheet is proposed. Since the anodized nanotube-array was crystallized independently before transferring to the PET, the internal charge transport resistance and the charge recombination rate are unchanged for the nanotubes on the PET sheet, and no high temperature sintering process is required. With hydrothermal treatment, the dye sensitized solar cell fabricated utilizing a low temperature bonded nanotube/PET as a photoelectrode exhibits a power conversion efficiency of 5.41%, which is only 0.87% lower than the power conversion efficiency of the solar cell using nanotubes bonded on a conductive glass through high temperature processes. (C) 2013 Elsevier Ltd. All rights reserved.Item type:Item, STRUCTURE OF HIGH ELECTRON MOBILITY TRANSISTOR GROWTH ON SI SUBSTRATE AND THE METHOD THEREOF(2013-02-28) ;YI CHANG Edward ;Tang Shih-HsuanLin Yueh-ChinA structure of high electron mobility transistor growth on Si substrate and the method thereof, in particular used for the semiconductor device manufacturing in the semiconductor industry. The UHVCVD system was used in the related invention to grow a Ge film on Si substrate then grow the high electron mobility transistor on the Ge film for the reduction of buffer layer thickness and cost. The function of the Ge film is preventing the formation of silicon oxide when growing III-V MHEMT structure in MOCVD system on Si substrate. The reason of using MHEMT in the invention is that the metamorphic buffer layer in MHEMT structure could block the penetration of dislocation which is formed because of the very large lattice mismatch (4.2%) between Ge and Si substrate.Item type:Item, RING OSCILLATOR(2013-02-28) ;HO Ying-Chieh ;Yang Yu-ShengSu Chau-ChinA ring oscillator includes (2N+1) inverting delay circuit cells, and each delay circuit cell has an input port and an output port, where N is an integer larger than zero. Each of these (2N+1) inverting delay circuit cells receives a control voltage, and all of the (2N+1) inverting delay circuit cells are electrically connected with each other in series. Furthermore, the input port of one of the (2N+1) inverting delay circuit cells is electrically connected with the output port of an adjacent delay circuit cell of the (2N+1) inverting delay circuit cells.Item type:Item, 印刷式濾波天線(2013-03-01) ;鍾世忠莊肇堂一種印刷式濾波天線,包含:天線部以及耦合線共振器。天線部與耦合線共振器直接連接。耦合線共振器與天線部結合以提供濾波作用,耦合線共振器包含:短路殘段電路以及開路殘段電路。短路殘段電路包含開路端以及接地之短路端。開路殘段電路以一間隙平行於短路殘段電路,包含第一端以及第二端。其中第一端連接於訊號饋入點,且對應於短路殘段電路之開路端,以與短路殘段電路耦合。Item type:Item, 「菲」常生活,親身體驗(國立陽明大學, 2013-03)宋紹瑜Item type:Item, A computer virus spreading model based on resource limitations and interaction costs(2013-03-01) ;Huang, Chung-Yuan ;Lee, Chun-Liang ;Wen, Tzai-Hung ;Sun, Chuen-Tsai資訊工程學系Computer viruses are major threats to Internet security and privacy, therefore many researchers are addressing questions linked to virus propagation properties, spreading models, epidemic dynamics, tipping points, and control strategies. We believe that two important factors - resource limitations and costs - are being overlooked in this area due to an overemphasis on power-law connectivity distributions of scale-free networks affecting computer virus epidemic dynamics and tipping points. The study show (a) a significant epidemic tipping point does exists when resource limitations and costs are considered, with the tipping point exhibiting a lower bound; (b) when interaction costs increase or usable resources decrease, epidemic tipping points in scale-free networks grow linearly while density curves decrease linearly; (c) regardless of whether Internet user resources obey delta, uniform, or normal distributions, they retain the same epidemic dynamics and tipping points as long as the average value of those resources remains unchanged across different scale-free networks; (d) it is possible to control the spread of a computer virus in a scale-free network if resources are restricted and if costs associated with infection events are significantly increased through the use of a throttling strategy. (C) 2012 Elsevier Inc. All rights reserved.Item type:Item, Single femtosecond laser pulse-single crystal formation of glycine at the solution surface(2013-03-01) ;Liu, Tsung-Han ;Uwada, Takayuki ;Sugiyama, Teruki ;Usman, AnwarHosokawa, YoichirohWe demonstrate femtosecond laser-induced crystallization of glycine from its supersaturated solution depending on laser tunable parameters (pulse energy and repetition rate) and focal position, and examine the crystallization probability, crystal morphology, and crystal polymorph. The generation of cavitation bubble through multiphoton absorption of water depends on input laser pulse energy and repetition rate, which strongly determine morphology and number of the obtained crystals. Significant increase in the crystallization probability is observed by irradiating the femtosecond laser pulses to the air/solution interface, and single pulse-induced single crystal formation is successfully achieved. The crystallization mechanism is discussed in view of inhomogeneous mechanical stress induced by cavitation bubble generation and molecular assembly characteristics of the surface. (C) 2012 Elsevier B.V. All rights reserved.Item type:Item, A Note on "Capability Assessment for Processes with Multiple Characteristics: A Generalization of the Popular Index Cpk"(2013-03-01) ;Pearn, W. L. ;Wu, C. H. ;Tsai, M. C. ;工業工程與管理學系Department of Industrial Engineering and ManagementThe generalized yield index C-pk(T) establishes the relationship between the manufacturing specifications and the actual process performance, which provides a lower bound on process yield for two-sided processes with multiple characteristics. The results attended are very practical for industrial application. In this article, we extended the results in cases with one-sided specification and multiple characteristics. The generalized index C-PU(T) was considered, and the asymptotic distribution of the natural estimator (C)over-cap(PU)(T) was developed. Then, we derived the lower confidence bounds as well as the critical values of index C-PU(T). We not only provided some tables but also presented an application example. Copyright (c) 2012 John Wiley & Sons, Ltd.Item type:Item, LOCATION CHOICE AND PATENT LICENSING(2013-03-01) ;Lin, Yan-Shu ;Hu, Jin-Li ;Xia, Peng-Chiao ;經營管理研究所Institute of Business and ManagementThis paper studies the patent licensing decision when firms can endogenously choose their locations. If the insider patentee is the location leader, the royalty is not necessarily the best method of licensing. No licensing can be the best method for an insider patentee with a sufficiently high degree of innovation, but fixed-fee is always the worst. However, if the non-innovating firm is the location leader, the royalty licensing is always the best method; moreover, the fixed-fee licensing (no licensing) is the second best method if the degree of innovation is relatively small (sufficiently large).Item type:Item, 附醫社區服務~促進部落健康,節制飲酒(國立陽明大學, 2013-03)張玉玲Item type:Item, Effect of surface preparation on the radiation hardness of high-dielectric constant gate dielectric(2013-03-01) ;Tsui, Bing-Yue ;Su, Ting-Ting ;Shew, Bor-Yuan ;Huang, Yang-Tung電子工程學系及電子研究所Effect of surface preparation on the radiation hardness of MOS devices with high dielectric constant gate dielectric of HfO2 and metal gate of TiN is studied using extreme ultra-violet (EUV) light as the radiation source. Three kinds of surface treatment including HF-last, chemical-oxidation, and rapid-thermal-oxidation were evaluated. Among them, chemical-oxidation exhibits the best radiation hardiness in terms of interface traps and border traps. The state-of-the-art MOSFET with a thin high-k dielectric and a high quality chemical oxide interfacial layer shows that the degradation of subthreshold swing is more severe than degradation of threshold voltage. However, the overall degradation is less than 6% even after EUV irradiation to a total dose of 580 mJ/cm(2). Off-state current degradation is observed due to the generation of oxide traps and interface traps at the isolation region. This phenomenon does not occur In the conventional optical lithography process but should be considered if EUV lithography is used. (C) 2013 Elsevier Ltd. All rights reserved.