Browsing by Issue Date, starting with "2013-02-28"

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Dye-sensitized solar cells based on agarose gel electrolytes using allylimidazolium iodides and environmentally benign solvents
(2013-02-28)
Hsu, Hsin-Ling
;
Tien, Cheng-Fang
;
Yang, Ya-Ting
;
Leu, Jihperng
;
材料科學與工程學系
Novel agarose gel electrolytes are prepared by allylimidazolium iodides-based ionic liquids and environmentally benign co-solvents (propylene carbonate (PC) and dimethyl sulfoxide (DMSO)) for dye-sensitized solar cells (DSSCs). Among 1-allyl-3-ethylimidadolium iodide (AEII), 1-allyl-3-propylimidazolium iodide (APII), 1-3-diallylimidazolium iodide (DAM, and 1-methyl-3-propylimidazolium iodide (MPII) ionic liquids, the agarose gel electrolyte containing AEII exhibits the best DSSC performance. The efficiency of the DSSC using the agarose gel electrolyte containing 1.5 M AEII and 0.65 wt% agarose is 5.89% with the highest I-3(-) diffusion coefficient of 7.7 x 10(-6) cm(2) s(-1). The performance of the AEII ionic liquid-based agarose gel electrolyte is comparable to the liquid electrolyte based on 3-methoxypropionitrile (MPN) (5.84%) under illumination at AM 1.5, 100 mW cm(-2). Moreover, the DSSC performance of the allylimidazolium iodides ionic liquid-based agarose electrolyte is determined by the interaction between ionic liquid and agarose, which affects the rigidity of the ion channels and the I-3(-) diffusion coefficient. (C) 2013 Elsevier Ltd. All rights reserved.
PRINTED FILTERING ANTENNA
(2013-02-28)
CHUNG Shyh-Jong
;
CHUANG Chao-Tang
A printed filtering antenna is provided. This filtering antenna comprises an antenna part and a coupled line resonator. The antenna part is directly connected to a coupled line resonator and occupies an antenna area. The coupled line resonator provides a filtering mechanism together with the antenna part. The coupled line resonator comprises a short-circuited stub and an open-circuited stub. The short-circuited stub comprises an open-circuited end and a short-circuited end connected to ground. The open-circuited stub is parallel to the short-circuited stub. The open-circuited stub comprises a first end o and a second end. The first end is connected to the feed point and is corresponding to the open-circuited end of the short-circuited stub such that the open-circuited stub is coupled to the short-circuited stub.
Sinter-free transferring of anodized TiO2 nanotube-array onto a flexible and transparent sheet for dye-sensitized solar cells
(2013-02-28)
Kuo, Yu-Yen
;
Chien, Chao-Hsin
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A sinter-free method to transfer anodized TiO2 nanotube-arrays to a polyethylene terephthalate (PET) sheet is proposed. Since the anodized nanotube-array was crystallized independently before transferring to the PET, the internal charge transport resistance and the charge recombination rate are unchanged for the nanotubes on the PET sheet, and no high temperature sintering process is required. With hydrothermal treatment, the dye sensitized solar cell fabricated utilizing a low temperature bonded nanotube/PET as a photoelectrode exhibits a power conversion efficiency of 5.41%, which is only 0.87% lower than the power conversion efficiency of the solar cell using nanotubes bonded on a conductive glass through high temperature processes. (C) 2013 Elsevier Ltd. All rights reserved.
STRUCTURE OF HIGH ELECTRON MOBILITY TRANSISTOR GROWTH ON SI SUBSTRATE AND THE METHOD THEREOF
(2013-02-28)
YI CHANG Edward
;
Tang Shih-Hsuan
;
Lin Yueh-Chin
A structure of high electron mobility transistor growth on Si substrate and the method thereof, in particular used for the semiconductor device manufacturing in the semiconductor industry. The UHVCVD system was used in the related invention to grow a Ge film on Si substrate then grow the high electron mobility transistor on the Ge film for the reduction of buffer layer thickness and cost. The function of the Ge film is preventing the formation of silicon oxide when growing III-V MHEMT structure in MOCVD system on Si substrate. The reason of using MHEMT in the invention is that the metamorphic buffer layer in MHEMT structure could block the penetration of dislocation which is formed because of the very large lattice mismatch (4.2%) between Ge and Si substrate.
RING OSCILLATOR
(2013-02-28)
HO Ying-Chieh
;
Yang Yu-Sheng
;
Su Chau-Chin
A ring oscillator includes (2N+1) inverting delay circuit cells, and each delay circuit cell has an input port and an output port, where N is an integer larger than zero. Each of these (2N+1) inverting delay circuit cells receives a control voltage, and all of the (2N+1) inverting delay circuit cells are electrically connected with each other in series. Furthermore, the input port of one of the (2N+1) inverting delay circuit cells is electrically connected with the output port of an adjacent delay circuit cell of the (2N+1) inverting delay circuit cells.
印刷式濾波天線
(2013-03-01)
鍾世忠
;
莊肇堂
一種印刷式濾波天線,包含:天線部以及耦合線共振器。天線部與耦合線共振器直接連接。耦合線共振器與天線部結合以提供濾波作用,耦合線共振器包含:短路殘段電路以及開路殘段電路。短路殘段電路包含開路端以及接地之短路端。開路殘段電路以一間隙平行於短路殘段電路,包含第一端以及第二端。其中第一端連接於訊號饋入點,且對應於短路殘段電路之開路端,以與短路殘段電路耦合。
「菲」常生活，親身體驗
(國立陽明大學, 2013-03)
宋紹瑜
A computer virus spreading model based on resource limitations and interaction costs
(2013-03-01)
Huang, Chung-Yuan
;
Lee, Chun-Liang
;
Wen, Tzai-Hung
;
Sun, Chuen-Tsai
;
資訊工程學系
Computer viruses are major threats to Internet security and privacy, therefore many researchers are addressing questions linked to virus propagation properties, spreading models, epidemic dynamics, tipping points, and control strategies. We believe that two important factors - resource limitations and costs - are being overlooked in this area due to an overemphasis on power-law connectivity distributions of scale-free networks affecting computer virus epidemic dynamics and tipping points. The study show (a) a significant epidemic tipping point does exists when resource limitations and costs are considered, with the tipping point exhibiting a lower bound; (b) when interaction costs increase or usable resources decrease, epidemic tipping points in scale-free networks grow linearly while density curves decrease linearly; (c) regardless of whether Internet user resources obey delta, uniform, or normal distributions, they retain the same epidemic dynamics and tipping points as long as the average value of those resources remains unchanged across different scale-free networks; (d) it is possible to control the spread of a computer virus in a scale-free network if resources are restricted and if costs associated with infection events are significantly increased through the use of a throttling strategy. (C) 2012 Elsevier Inc. All rights reserved.
Single femtosecond laser pulse-single crystal formation of glycine at the solution surface
(2013-03-01)
Liu, Tsung-Han
;
Uwada, Takayuki
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Sugiyama, Teruki
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Usman, Anwar
;
Hosokawa, Yoichiroh
We demonstrate femtosecond laser-induced crystallization of glycine from its supersaturated solution depending on laser tunable parameters (pulse energy and repetition rate) and focal position, and examine the crystallization probability, crystal morphology, and crystal polymorph. The generation of cavitation bubble through multiphoton absorption of water depends on input laser pulse energy and repetition rate, which strongly determine morphology and number of the obtained crystals. Significant increase in the crystallization probability is observed by irradiating the femtosecond laser pulses to the air/solution interface, and single pulse-induced single crystal formation is successfully achieved. The crystallization mechanism is discussed in view of inhomogeneous mechanical stress induced by cavitation bubble generation and molecular assembly characteristics of the surface. (C) 2012 Elsevier B.V. All rights reserved.
A Note on "Capability Assessment for Processes with Multiple Characteristics: A Generalization of the Popular Index Cpk"
(2013-03-01)
Pearn, W. L.
;
Wu, C. H.
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Tsai, M. C.
;
工業工程與管理學系
;
Department of Industrial Engineering and Management
The generalized yield index C-pk(T) establishes the relationship between the manufacturing specifications and the actual process performance, which provides a lower bound on process yield for two-sided processes with multiple characteristics. The results attended are very practical for industrial application. In this article, we extended the results in cases with one-sided specification and multiple characteristics. The generalized index C-PU(T) was considered, and the asymptotic distribution of the natural estimator (C)over-cap(PU)(T) was developed. Then, we derived the lower confidence bounds as well as the critical values of index C-PU(T). We not only provided some tables but also presented an application example. Copyright (c) 2012 John Wiley & Sons, Ltd.
LOCATION CHOICE AND PATENT LICENSING
(2013-03-01)
Lin, Yan-Shu
;
Hu, Jin-Li
;
Xia, Peng-Chiao
;
經營管理研究所
;
Institute of Business and Management
This paper studies the patent licensing decision when firms can endogenously choose their locations. If the insider patentee is the location leader, the royalty is not necessarily the best method of licensing. No licensing can be the best method for an insider patentee with a sufficiently high degree of innovation, but fixed-fee is always the worst. However, if the non-innovating firm is the location leader, the royalty licensing is always the best method; moreover, the fixed-fee licensing (no licensing) is the second best method if the degree of innovation is relatively small (sufficiently large).
附醫社區服務~促進部落健康，節制飲酒
(國立陽明大學, 2013-03)
張玉玲
Effect of surface preparation on the radiation hardness of high-dielectric constant gate dielectric
(2013-03-01)
Tsui, Bing-Yue
;
Su, Ting-Ting
;
Shew, Bor-Yuan
;
Huang, Yang-Tung
;
電子工程學系及電子研究所
Effect of surface preparation on the radiation hardness of MOS devices with high dielectric constant gate dielectric of HfO2 and metal gate of TiN is studied using extreme ultra-violet (EUV) light as the radiation source. Three kinds of surface treatment including HF-last, chemical-oxidation, and rapid-thermal-oxidation were evaluated. Among them, chemical-oxidation exhibits the best radiation hardiness in terms of interface traps and border traps. The state-of-the-art MOSFET with a thin high-k dielectric and a high quality chemical oxide interfacial layer shows that the degradation of subthreshold swing is more severe than degradation of threshold voltage. However, the overall degradation is less than 6% even after EUV irradiation to a total dose of 580 mJ/cm(2). Off-state current degradation is observed due to the generation of oxide traps and interface traps at the isolation region. This phenomenon does not occur In the conventional optical lithography process but should be considered if EUV lithography is used. (C) 2013 Elsevier Ltd. All rights reserved.
歷史的肉身化與心靈的歷史化－編輯室的話
(國立陽明交通大學出版社, 2013-03-01)
劉紀蕙
「所有的惡臭都是疾病」：論迪更斯《荒涼山莊》的衛生論述與道德經濟
(國立陽明交通大學出版社, 2013-03-01)
陳重仁
迪更斯擅以城市地景為寫作素材，透過描繪社會底層卑微求生的日常生活，呈現城市貧民窟的擁擠與污穢，藉此揉入他的批判與關懷。本文企圖比對迪更斯的小說《荒涼山莊》與同時期查德維克引領的衛生改造運動，分析何以公共衛生政策首重通風、明亮、乾爽的居住環境，何以迪更斯的小說揭櫫正常化政治的權力運作，又何以醫學寫實與都會醫學大量導入監視生活習慣與管理環境衛生的操作，成為國家醫學中規訓日常生活操作的監視政治。迪更斯揭示日常生活經驗中所「見」所「聞」的瑣碎細節，藉由檢視環境污染與疾病傳染，建立標準、排斥異常根絕疾病、強化健康的醫學正常化機制：日常生活中種種不潔的環境因素不再僅是建立健康城市的參照標準，也是城市居民可感之、可探之且可避之的感染源。
章太炎的「神經病」作為生存位置與革命知識情感動能
(國立陽明交通大學出版社, 2013-03-01)
劉人鵬
1906年，章太炎（1869-1936）在日本〈東京留學生歡迎會演說辭〉中，提出「神經病」作為召喚革命感情與學問事業的重要動能。本文試圖提供一種理解章太炎生命與學術的方式，是重新思考章太炎的「神經病」作為一種經驗立場，以及經常被忽略掉的作為革命知識與感情的重要動能。本文大略追究了19世紀晚期到20世紀初期「神經病」一詞的源流與多重語義，並且從兩個脈絡閱讀章太炎的「神經病」，一是「革命者」，一是有「腦病」的人。透過這二個線索的閱讀，本文一方面試圖將「神經病」的具體血肉經驗清晰化，另一方面也將章太炎的「神經病」闡釋為一種論述位置，亦即一個說話的位置，在這個位置上，凝聚了章太炎經驗、政治、社會以及知識立場。
Edge-colorings of K-m,K-n which Forbid Multicolored Cycles
(2013-03-01)
Fu, Hung-Lin
;
Lo, Yuan-Hsun
;
Pei, Ryo-Yu
;
應用數學系
;
Department of Applied Mathematics
A subgraph in an edge-colored graph is multicolored if all its edges receive distinct colors. In this paper, we study the proper edge-colorings of the complete bipartite graph K-m,K-n which forbid multicolored cycles. Mainly, we prove that (1) for any integer k >= 2, if n >= 5k - 6, then any properly n-edge-colored K-k,K-n contains a multicolored C-2k, and (2) determine the order of the properly edge-colored complete bipartite graphs which forbid multicolored C-6.
Fast-Yet-Accurate Statistical Soft-Error-Rate Analysis Considering Full-Spectrum Charge Collection
(2013-03-01)
Huang, Hsuan-Ming
;
Wen, Charles H. -P.
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交大名義發表
;
傳播研究所
;
電機資訊學士班
Achieving Arbitrary Multiplexing Rates for MIMO-OFDM Systems by Hybrid Cyclic Delay Diversity
(2013-03-01)
Chang, Hsien-Wen
;
Wang, Li-Chun
;
電機資訊學士班
;
Undergraduate Honors Program of Electrical Engineering and Computer Science
This paper proposes a new hybrid cyclic delay diversity (HCDD) scheme for multiple input multiple output (MIMO) orthogonal frequency division multiplexing (OFDM) systems. Unlike the existing double space time transmit diversity (DSTTD) and stacked cyclic delay diversity (SCDD) schemes that are suitable for integer multiplexing rates, the proposed HCDD scheme can achieve arbitrary non-integer multiplexing rates. Our results demonstrate that the HCDD scheme can provide flexibility in selecting the required number of transmitting antennas and in adjusting diversity and multiplexing gains to match various users requirements. The advantages of the proposed HCDD, including the flexible rate assignment and less complex receivers, are presented in applications of scalable video broadcasting (SVB).
Enhanced lateral heat dissipation packaging structure for GaN HEMTs on Si substrate
(2013-03-01)
Cheng, Stone
;
Chou, Po-Chien
;
Chieng, Wei-Hua
;
Chang, E. Y.
;
機械工程學系
This work presents a technology for packaging AlGaN/GaN high electron mobility transistors (HEMTs) on a Si substrate. The GaN HEMTs are attached to a V-groove copper base and mounted on a TO-3P leadframe. The various thermal paths from the GaN gate junction to the case are carried out for heat dissipation by spreading to protective coating; transferring through the bond wires; spreading in the lateral device structure through the adhesive layer, and vertical heat spreading of silicon chip bottom. Thermal characterization showed a thermal resistance of 13.72 degrees C/W from the device to the TO-3P package. Experimental tests of a 30 mm gate-periphery single chip packaged in a 5 x 3 mm V-groove Cu base with a 100 V drain bias showed power dissipation of 22 W. (c) 2012 Elsevier Ltd. All rights reserved.