Browsing by Issue Date, starting with "2013-05-06"

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The mechanism of the surface morphology transformation for the carbon nanotube thin film irradiated via excimer laser
(2013-05-06)
Chien, Yun-Shan
;
Lee, I-Che
;
Yang, Po-Yu
;
Wang, Chao-Lung
;
Tsai, Wan-Lin
In this paper, the surface morphology transformation of the sprayed carbon nanotube (CNT) thin film irradiated with the excimer laser has been systematically investigated. Under the excimer-laser irradiation, two phenomena, including the annealing and ablation effects, were found to be dependent on the incident laser energy and overlapping ratios. Moreover, the extremely high protrusions would be produced in the interface between the annealing and ablation regions. The mechanism of the CNT thin film under the excimer laser irradiation was, therefore, proposed to derive the surface morphology modifications and the further reinforced crystallinity with proper laser energy densities and overlapping ratios. (C) 2013 AIP Publishing LLC.
Interface control of surface photochemical reactivity in ultrathin epitaxial ferroelectric films
(2013-05-06)
Chen, Jason
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Lu, Haidong
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Liu, Heng-Jui
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Chu, Ying-Hao
;
Dunn, Steve
Asymmetrical electrical boundary conditions in (001)-oriented Pb(Zr0.2TiO0.8)O-3 (PZT) epitaxial ultrathin ferroelectric films are exploited to control surface photochemical reactivity determined by the sign of the surface polarization charge. It is shown that the preferential orientation of polarization in the as-grown PZT layer can be manipulated by choosing an appropriate type of bottom electrode material. PZT films deposited on the SrRuO3 electrodes exhibit preferential upward polarization (C+) whilst the same films grown on the (La, Sr)CoO3-electrodes are polarized downward (C-). Photochemical activity of the PZT surfaces with different surface polarization charges has been tested by studying deposition of silver nanoparticles from AgNO3 solution under UV irradiation. PZT surfaces with preferential C+ orientation possess a more active surface for metal reduction than their C- counterparts, evidenced by large differences in the concentration of deposited silver nanoparticles. This effect is attributed to band bending at the bottom interface which varies depending on the difference in work functions of PZT and electrode materials. (C) 2013 AIP Publishing LLC.
Photonic chirped radio-frequency generator with ultra-fast sweeping rate and ultra-wide sweeping range
(2013-05-06)
Wun, Jhih-Min
;
Wei, Chia-Chien
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Chen, Jyehong
;
Goh, Chee Seong
;
Set, S. Y.
A high-performance photonic sweeping-frequency (chirped) radio-frequency (RF) generator has been demonstrated. By use of a novel wavelength sweeping distributed-feedback (DFB) laser, which is operated based on the linewidth enhancement effect, a fixed wavelength narrow-linewidth DFB laser, and a wideband (dc to 50 GHz) photodiode module for the hetero-dyne beating RF signal generation, a very clear chirped RF waveform can be captured by a fast real-time scope. A very-high frequency sweeping rate (10.3 GHz/mu s) with an ultra-wide RF frequency sweeping range (similar to 40 GHz) have been demonstrated. The high-repeatability (similar to 97%) in sweeping frequency has been verified by analyzing tens of repetitive chirped waveforms. (C) 2013 Optical Society of America
交大e-News第140期
(2013-05-06)
Secretariat
;
國立交通大學秘書室
Method for forming T-shaped gate structure
(2013-05-07)
Chang Edward Yi
;
Huang Lu-Che
;
Chang Chia-Hua
;
Lin Yueh-Chin
;
Chieng Wei-Hua
A method for forming a T-shaped gate is provided. The method includes providing a substrate. Then, a photoresist structure is formed over the substrate. The photoresist structure includes two development rates. Next, a mask with an opening is formed over the photoresist structure to pattern the photoresist structure. An angle exposure is applied to the photoresist structure, and the exposed photoresist structure is developed to form a T-shaped notch. A width of the T-shaped notch is gradually reduced from a top portion thereof to a bottom portion to expose a surface of the substrate. Then, a gate metal is deposited in the T-shaped notch. Thereafter, the patterned photoresist structure is removed to form the T-shaped gate.
Efficient Method for Recycling Silica Materials from Waste Powder of the Photonic Industry
(2013-05-07)
Lin, Liang-Yi
;
Bai, Hsunling
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環境工程研究所
;
Institute of Environmental Engineering
An efficient and economic approach is proposed for the fast and direct recovery of silica materials from photonic waste powder. Unlike the conventional alkaline fusion method for the extraction of silica from waste materials, this method possesses advantages of a rapid and low-energy-consumed process with total recovery yield. The obtained mesoporous silica material, denoted as MCM-41(DU)-F, was recovered directly from photonic waste powder at room temperature with the assistance of cationic surfactant, hydrofluoric acid, and ammonia hydroxide. The recycled MCM-41(DU)-F with a high specific surface area (788 m(2)/g), ordered mesoporous structure (4.5 nm), and large pore volume (1.1 cm(3)/g) was used as support of tetraethylenepentamine (TEPA) for the capture of CO2 from a flue gas stream. The results demonstrated that TEPA-impregnated MCM-41(DU)-F had an adsorption capacity of 120 mg of CO2/g of adsorbent This is higher than the amount adsorbed by TEPA-MCM-41(NaSi) made from pure chemicals (113 mg of CO2/g of adsorbent) and TEPA-MCM-41(AF) made from alkaline fusion (112 mg of CO2/g of adsorbent) under the same testing conditions. This novel recycling process, which can improve cost effectiveness for the mass production of valuable mesoporous silica materials from cheap and abundant resources through convenient preparation steps, is surely beneficial from the viewpoint of economical use of photonic industrial waste powder.
Static random access memory cell and method of operating the same
(2013-05-07)
Chiu Yi-Te
;
Chang Ming-Hung
;
Yang Hao-I
;
Hwang Wei
A static random access memory cell includes a latch unit. The latch unit includes a bi-inverting circuit and a switching circuit. The bi-inverting circuit has a first terminal and a second terminal. The switching circuit is electrically connected between the first terminal and the second terminal, wherein when the switching circuit is turned on, the switching circuit forms a feedback between the first terminal and the second terminal for latching the latch unit; and when the switching circuit is turned off, the feedback is removed to cause the SRAM cell to write a data bit to the latch unit.
Influences of the Non-Covalent Interaction Strength on Reaching High Solid-State Order and Device Performance of a Low Bandgap Polymer with Axisymmetrical Structural Units
(2013-05-07)
Jheng, Jyun-Fong
;
Lai, Yu-Ying
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Wu, Jhong-Sian
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Chao, Yi-Hsiang
;
Wang, Chien-Lung
A high organic field-effect transistor mobility (0.29 cm(2)V(-1)s(-1)) and bulk-heterojunction polymer solar cell performance (PCE of 6.82%) have been achieved in a low bandgap alternating copolymer consisting of axisymmetrical structural units, 5,6-difluorobenzo-2,1,3-thiadiazole. Introducing the fluorine substituents enhanced intermolecular interaction and improved the solid-state order, which consequently resulted in the highest device performances among the 2,1,3-thiadiazole-quarterthiophene based alternating copolymers.
Effect of Geometric Nanostructures on the Absorption Edges of 1-D and 2-D TiO2 Fabricated by Atomic Layer Deposition
(2013-05-08)
Chang, Yung-Huang
;
Liu, Chien-Min
;
Cheng, Hsyi-En
;
Chen, Chih
;
材料科學與工程學系
2-Dimensional (2-D) TiO2 thin films and 1-dimensional (1-D) TiO2 nanotube arrays were fabricated on Si and quartz substrates using atomic layer deposition (ALD) with an anodic aluminum oxide (AAO) template at 400 degrees C. The film thickness and the tube wall thickness can be precisely controlled using the ALD approach. The intensities of the absorption spectra were enhanced by an increase in the thickness of the TiO2 thin film and tube walls. A blue-shift was observed for a decrease in the 1-D and 2-D TiO2 nanostructure thicknesses, indicating a change in the energy band gap with the change in the size of the TiO2 nanostructures. Indirect and direct interband transitions were used to investigate the change in the energy band gap. The results indicate that both quantum confinement and interband transitions should be considered when the sizes of 1-D and 2-D TiO2 nanostructures are less than 10 nm.
職涯步步都發光：如何《作自己職場的諸葛亮》
(2013-05-08)
詹文男
;
開放教育推動中心
;
Open Education Office
課程首頁本課程是由交通大學新文藝復興閱讀計畫提供。 96 年 8 月當各大學紛紛摩拳擦掌準備迎接新生的同時，交通大學校長吳重雨則因為一則來自於七月份泰晤士報，有關於英國首相布朗公布其夏日讀書清單的新聞中，看到了他對知識的尊重。在這同時，吳重雨校長也思考著，要如何為學生準備追求知識的環境和激發他們對知識的尊重與喜愛。台積電張忠謀董事長曾陳述他 18 歲進入哈佛那一年，博覽文史哲理工經典群籍，至此奠定了他求知的基礎，並借海明威名言，將其改為「哈佛這一年為人生可帶走的盛宴。」吳重雨校長以張董事長的學習為借鏡，認為學生固然能藉由自我閱讀的方式學習到豐沛的知識，但透過名人、大師親臨現場地介紹經典書籍，更能加深學子們對於書籍的認識與興趣，這也是「新文藝復興閱讀計劃」 ( 以下簡稱 : 「經典名著選讀」 ) 活動展開籌劃的緣由。於是，吳重雨校長便積極敦請「交大通識教育委員會」，接手籌備本計劃的相關活動，而該中心也成為實際施行本計畫的策動、開課以及認證單位。至此，期許交大學子藉由閱讀、聽講來提昇人文素養、開拓視野的「新文藝復興閱讀計劃」，就此展開。
BIOLOGICAL COMPOSITE AND METHOD FOR REDUCING H2S
(2013-05-09)
TSENG Ching-Ping
;
Chen Yu-Pei
A biological composite and method for reducing H2S are disclosed. The biological composite for reducing H2S includes a carrier and Thermus sp. immobilized on the carrier. Therefore, if a sample containing H2S has contact with Thermus sp. or the carrier with Thermus sp. immobilized thereon, the amount of H2S can be reduced.
倍頻電訊號之光電調變裝置
(2013-05-11)
陳智弘
;
林俊廷
;
戴盛鵬
;
彭朋群
;
施伯宗
本發明係揭露一種倍頻電訊號之光電調變裝置，包含一混波器，其在接收第一電訊號與第二電訊號後，輸出混合資料訊號，混合資料訊號由第一相位偏移裝置接收，並在偏移其相位後，輸出第一偏移訊號，另第一電訊號亦經由第二相位偏移裝置進行同樣的處理後，輸出第二偏移訊號，光電調變器可接收一輸入光源訊號、第一偏移訊號、第二偏移訊號、混合資料訊號與第一電訊號，並藉此調變輸入光源訊號為載有第一電訊號與第二電訊號之倍頻輸出光源訊號。本發明可載送振幅偏移調變訊號與向量調變訊號，以進行光通訊傳輸服務。
八分之一波長短開路槽孔天線
(2013-05-11)
鍾世忠
;
王侑信
本發明提出一種縮小化的八分之一波長短開路槽孔天線架構。藉由在傳統四分之一波長共振的開路槽孔天線中加入兩個負載電容，可達成縮小化的功效。此負載電容可以晶片電容或是印刷式電容方式實現。利用等效電路的設計方法，能夠利用此已建立的等效電路模型，針對所欲操作的共振頻率以及阻抗匹配，取代全波模擬以微調所需要的元件值。電路等效模擬結果、全波模擬軟體模擬結果以及量測結果均相吻合。並且，可用變容器取代原本的負載電容，並能達成頻率可調的功能。本發明具有小尺寸、結構簡單、容易與電路整合的優點，適用於無線通訊產品。
Effects of bulk and interfacial charge accumulation on fill factor in organic solar cells
(2013-05-13)
Chen, Bingbing
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Qiao, Xianfeng
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Liu, Chih-Ming
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Zhao, Chen
;
Chen, Hsiu-Cheng
The effects of charge accumulation on fill factor (FF) are studied by using light intensity-dependent current-voltage and capacitance-voltage measurements based on poly-{bi(dodecyl) thiophene-thieno[ 3,4-c]pyrrole-4,6-dione}:1(3-methyloxycarbonyl)propyl-1-phenyl [6,6] (PBTTPD:PCBM) solar cells. We find that the FF of un-annealed device shows a non-monotonic dependence of light intensity: first an increase and then a decrease with increasing light intensity. This suggests that both bulk charge accumulation and recombination determine the FF before thermal annealing. Furthermore, the morphological enhancement of PBTTPD: PCBM film leads to a monotonic decrease of FF as increasing light intensity. This indicates that only surface charge accumulation plays an important role in the determination of the FF after thermal annealing. (C) 2013 AIP Publishing LLC.
Label-Free Electrical Detection of DNA Hybridization on Graphene using Hall Effect Measurements: Revisiting the Sensing Mechanism
(2013-05-13)
Lin, Cheng-Te
;
Phan Thi Kim Loan
;
Chen, Tzu-Yin
;
Liu, Keng-Ku
;
Chen, Chang-Hsiao
There is broad interest in using graphene or graphene oxide sheets as a transducer for label-free and selective electrical detection of biomolecules such as DNA. However, it is still not well explored how the DNA molecules interact with and influence the properties of graphene during the detection. Here, Hall effect measurements based on the Van der Pauw method are used to perform single-base sequence selective detection of DNA on graphene sheets, which are prepared by chemical vapor deposition. The sheet resistance increases and the mobility decreases with the addition of either complementary or one-base mismatched DNA to the graphene device. The hole carrier concentration of the graphene devices increases significantly with the addition of complementary DNA but it is less affected by the one-base mismatched DNA. It is concluded that the increase in hole carrier density, indicating p-doping to graphene, is better correlated with the DNA hybridization compared to the commonly used parameters such as conductivity change. The different electrical observations of p-doping from Hall effect measurements and n-doping from electrolyte-gated transistors can be explained by the characteristic morphology of partially hybridized DNA on graphene and the mismatch between DNA chain length and Debye length in electrolytes.
High quality factor nonpolar GaN photonic crystal nanocavities
(2013-05-13)
Wu, Tzeng-Tsong
;
Lo, Sheng-Yun
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Huang, Huei-Min
;
Tsao, Che-Wei
;
Lu, Tien-Chang
High quality factor a-plane nonpolar GaN two-dimensional photonic crystal (PC) nanocavities on r-plane sapphire substrates have been demonstrated. Nonpolar GaN PC nanocavities on a thin membrane structure were realized by using e-beam lithography to define the PC patterns and focused-ion beam milling to fabricate the suspended thin membrane. A dominant resonant mode at 388 nm with a high quality factor of approximately 4300 has been demonstrated at 77K by the micro-photoluminescence system. Moreover, the degree of polarization of the emission from the non-polar GaN PC nanocavity was measured to be 64% along the m crystalline direction. (C) 2013 AIP Publishing LLC.
Decentralized structured peer-to-peer network and load balancing methods thereof
(2013-05-14)
Hsu Chung-Yuan
;
Wang Kuochen
;
Shih Hung-Cheng
An approach is provided for reassigning and sharing loads to peers with a same identity, which is based on a threshold. The peers are configured to store indexes of a key and to share the same loading (i.e., indexes) of the key to the peers with same secondary identities in different zones. The secondary identity is derived and has a modulo relationship with a first identity of the peer. The threshold indicates maximum number of indexes stored in each peer. Therefore, the loading are distributed evenly to peers in different zones, which achieves load balance to a decentralized structured peer-to-peer network.
The effect of dielectric confinement on photoluminescence of In2O3-SiO2 nanocomposite thin films incorporated by nitrogen
(2013-05-14)
Lyu, Yang-Ru
;
Hsieh, Tsung-Eong
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材料科學與工程學系
;
Department of Materials Science and Engineering
Nanocomposite thin films containing In2O3 nanoparticles were prepared by the target-attachment sputtering utilizing the InN pellets and allowing the N-2 inlet gas flow during the deposition process. The x-ray photoelectron spectroscopy revealed that the chemical composition of In2O3 nanoparticles becomes InOxNy and the SiOxNy phase forms in the matrix of nanocomposite layer. Photoluminescence analysis indicated that the dielectric confinement effect induced by the N-incorporation tends to restrain the green emission of nanocomposite layers due to the presence of surface polarization on nanoparticles. Suppression of blue emission was also observed due to the elimination of oxygen vacancies in In2O3 nanoparticles. Furthermore, the N elements might occupy the oxygen lattice sites and generate a new defect level, N-O(-), to induce the violet emission. Analytical results confirmed the mechanisms of green and blue emissions of the nanocomposite thin films containing In2O3 nanoparticles reported previously. (C) 2013 AIP Publishing LLC.
Reappraising the relationships between physics students' mental models and predictions: An example of heat convection
(2013-05-14)
Chiou, Guo-Li
;
教育研究所
;
Institute of Education
Although prediction is claimed to be a prime function of mental models, to what extent students can run their mental models to make predictions of physical phenomena remains uncertain. The purpose of this study, therefore, was first to investigate 30 physics students' mental models of heat convection, and then to examine the relationship between their mental models and predictions of convection-related phenomena. A series of semistructured interviews was conducted to probe the participants' mental models and predictions of heat convection, and the constant comparative method was adopted for data analysis. The results reveal that the participants held a variety of mental models of heat convection, and nearly half held flawed mental models rather than a scientifically compatible one. In addition, while many participants attempted to run their mental models to make a prediction at the beginning stage of solving an interview problem, the relationship between the models and predictions became increasingly complex as the problem solving process continued. The relationships between mental models and predictions, however, could be better understood by considering the completeness of a mental model, the scale of analyzing mental models, and the retrieval of different formats of mental representations.
Dung-shen (Codonopsis pilosula) attenuated the cardiac-impaired insulin-like growth factor II receptor pathway on myocardial cells
(2013-05-15)
Tsai, Kun-Hsi
;
Lee, Nien-Hung
;
Chen, Guei-Ying
;
Hu, Wei-Syun
;
Tsai, Chen-Yen
Previous studies from our lab showed that increase in AngIl in H9c2 cells causes elevated IGFII and IGFIIR through MEK and JNK, leading to rise in intracellular calcium, calcineurin activation by PLC-beta 3 via G alpha q, insertion into mitochondrial membranes of Bad, and apoptosis via caspases 9 and 3. Codonopsis pilosula is traditionally used to lower blood pressure. The purpose of our study is to investigate if C. pilosula attenuates AngII plus Leu(27)-IGFII-induced calcium influx and apoptosis in H9c2 cardiomyoblasts. C pilosula significantly attenuated AngII induced IGFIIR promoter activity. Leu(27)-IGFII was applied to enhance the Angll effect. C pilosula also reversed Ca2+ influx, MOMP and apoptosis increased by AngIl plus Leu(27)-IGFIL Molecular markers in IGFIIR apoptotic pathway (IGFIIR, calcineurin, etc.) and IGFIIR-G alpha q association were downregulated by C pilosula. However, p-Bad(Ser136) and BcI-2 were increased. Therefore, C pilosula suppresses Angll plus Leu(27)-IGFII-induced IGFII/IGFIIR pathway in myocardial cells. (C) 2012 Elsevier Ltd. All rights reserved.