Browsing by Issue Date, starting with "2013-07-04"

Now showing 1 - 20 of 31194

CURRENT STIMULATOR
(2013-07-04)
Lin Chun-Yu
;
Li Yi-ju
;
Ker Ming-Dou
The disclosure relates to a current stimulator, which comprises a high voltage output module, a voltage control module and a charge pump module. The high voltage output module includes a plurality of stacked transistors, and receives an input control signal able to turn on/off the current stimulator and a first voltage. A second voltage is generated by adding the voltages output by all the transistors to the first voltage and then output to the voltage control module. The voltage control module outputs a voltage control signal able to stabilize the stimulus current for the load according to the second voltage and the load impedance variation. The charge pump regulates the first voltage according to the voltage control signal, and outputs the regulated first voltage to the high voltage output module. Thereby, the current stimulator can adaptively stabilize the stimulus current, responding to load impedance variation.
METHOD FOR IMPROVING IMAGING RESOLUTION OF ELECTRICAL IMPEDANCE TOMOGRAPHY
(2013-07-04)
Choi Charles Tak Ming
;
Sun Shu-Hai
The present disclosure provides a method for improving imaging resolution of electrical impedance tomography (EIT). More specifically, the present disclosure forms virtual electrode(s) using an electric current steering technique, which is used to improve imaging resolution of an EIT system without physically increasing a number of conducting electrodes. The EIT system of the present disclosure may includes a plurality of conducting electrodes, at least one signal generator, at least one signal receiver and at least one electric current steering device. In other words, the present disclosure applies both the electric current steering technique and the virtual electrode technique to EIT. Consequently, imaging resolution of EIT can be improved without physically increasing the number of conducting electrodes.
Integrated Circuit Device
(2013-07-04)
Chen Kuan-Neng
;
Lai Ming-Fang
;
Chen Hung-Ming
An integrated circuit device includes: a first chip including a first substrate and a main circuit formed on said first chip; a second chip stacked on the first substrate and including a second substrate that is independent from the first substrate, and a protective circuit for protecting the main circuit; and a conductive channel unit extending from the protective circuit and electrically connected to the main circuit.
BIOLOGICAL DETECTION DEVICE AND DETECTING METHOD
(2013-07-04)
LIN Yi-Hsin
;
Chu Wei-Lin
;
Wu Li-Ching
The present invention discloses a biological detection device and a detecting method. The biological detection device comprises a substrate, an electric field unit, a liquid crystal/polymer composite film (LCPCF), a power supply, a processing unit, and an image sensor. Because of the electrically tunable orientations of the liquid crystal (LC) director anchored among the polymer grains, the wettability of the LCPCF changes with an applied electric field. As a result, we can manipulate a blood droplet on the LCPCF by a wettability gradient owing to the distribution of LC directors on the LCPCF. The motion states of the blood droplet can be related to the various qualities of the blood, and finally determines the health of the test sample. The change of contact angle of blood on LCPCF and the blood droplet motion on LCPCF indicate the concentration of TG and the concentration of HDL.
Sound Wave Propagation Anisotropy in Silver Nanoprisms: Characterization of Photoinduced Multiple Modes Using the Symmetric Molecular Dynamics Method
(2013-07-04)
Ng, Ming-Yaw
;
Yu, Pyng
;
Tang, Jau
;
Chang, Yia-Chung
;
光電工程學系
We present both theoretical and experimental studies of the sound velocity anisotropy and laser-induced multiple acoustic phonon oscillations in silver nanoprisms. A large-scale simulation method based on molecular dynamics and group theory for nanoprisms with C-3v symmetry was developed. We observed the most prominent planar modes and the less studied vertical modes and found that the anisotropic vibrational properties of silver nanoprisms strongly depend on the particle's aspect ratio (bisector length over thickness). For the case of a smaller aspect ratio, we identified these modes as the A, modes with a larger in phase radial atomic displacement These modes can be classified into three main types: breathing modes and totally symmetric modes which are planar modes and thickness-related vertical modes. Due to the strong coupling with laterally confined modes, a broad band of thickness-related modes is found (in contrast to a single sharp peak for thin films), which leads to a fast decaying component in the oscillation spectrum. The calculated results and the sound velocity anisotropy along different crystal axes are in good agreement with our transient optical absorption experiments.
METHOD FOR REMOVING GERMANIUM SUBOXIDE
(2013-07-04)
Liu Po-Tsun
;
Huang Chen-Shuo
A method for removing germanium suboxide between a germanium (Ge) substrate and a dielectric layer made of metal oxide includes causing a supercritical fluid composition that includes a supercritical carbon dioxide fluid and an oxidant to diffuse into the germanium suboxide such that metal residues in the dielectric layer, the germanium suboxide and the oxidant are subjected to a redox reaction so as to reduce the germanium suboxide into germanium.
Realistic quantum design of silicon quantum dot intermediate band solar cells
(2013-07-05)
Hu, Weiguo
;
Igarashi, Makoto
;
Lee, Ming-Yi
;
Li, Yiming
;
Samukawa, Seiji
A highly periodical Si nanodisk superlattice has been fabricated by our top-down process. Based on the realistic structure, a 3D simulation program using the finite element method is developed to calculate energy band structure, optical and electrical properties, as well as the intermediate band solar cell operation. Both the experiments and simulations reveal that miniband formation enhances the optical and electrical collections. Consequently, detailed electronic structure and conversion efficiency are examined to guide the optimal design of minibands. A theoretically predicted maximal efficiency of the explored Si nanodisk superlattice is 50.3%, which is promising, compared with well-known complicated Si tandem solar cells.
交大e-News第144期
(2013-07-05)
Secretariat
;
國立交通大學秘書室
Platinum-graphene counter electrodes for dye-sensitized solar cells
(2013-07-07)
Cheng, Cheng-En
;
Lin, Chi-Yuan
;
Shan, Chien-Hsun
;
Tsai, Shang-Yi
;
Lin, Ko-Wei
This paper describes the photovoltaic performance of dye-sensitized solar cells (DSSCs) containing graphene-incorporated counter electrodes (CEs). The location and thickness of graphene in CEs are optimized to improve the photovoltaic performance of DSSCs, compared with typical Pt CEs. The DSSC, with a Pt/few-layer graphene (FLG) CE, achieved 8% in short-circuit current density and 13% in power conversion efficiency (PCE). Electrochemical impedance spectroscopy shows that the DSSC, with a Pt/FLG CE, exhibits a series resistance lower than that with a Pt CE. The lower series resistance is attributed to the contact resistance at the interface of platinum and fluorine doped tin oxide. The contact resistance is reduced by the formation of the thin platinum-carbon composite layer. It is demonstrated that the consumption of Pt could be reduced with a Pt/FLG CE. However, graphene/Pt CEs resulted in a slow charge-transfer process and consequently a worse photovoltaic performance of DSSCs. (C) 2013 AIP Publishing LLC.
Abnormal sub-threshold swing degradation under dynamic hot carrier stress in HfO2/TiN n-channel metal-oxide-semiconductor field-effect-transistors
(2013-07-08)
Tsai, Jyun-Yu
;
Chang, Ting-Chang
;
Lo, Wen-Hung
;
Chen, Ching-En
;
Ho, Szu-Han
This work finds abnormal sub-threshold swing (S.S.) degradation under dynamic hot carrier stress (HCS) in n-channel metal-oxide-semiconductor field-effect-transistors with high-k gate dielectric. Results indicate that there is no change in S.S. after dynamic HCS due to band-to-band hot hole injection at the drain side which acts to diminish the stress field. Moreover, the impaired stress field causes the interface states to mainly distribute in shallow states. This results in ON state current and transconductance decreases, whereas S.S. degradation is insignificant after dynamic HCS. The proposed model is confirmed by one-side charge pumping measurement and gate-to-drain capacitance at varying frequencies. (C) 2013 AIP Publishing LLC.
Unraveling the origins of electromechanical response in mixed-phase bismuth ferrite
(2013-07-08)
Vasudevan, R. K.
;
Okatan, M. B.
;
Liu, Y. Y.
;
Jesse, S.
;
Yang, J. -C.
The origin of giant electromechanical response in a mixed-phase rhombohedral-tetragonal BiFeO3 thin film is probed using subcoercive scanning probe microscopy based multiple-harmonic measurements. Significant contributions to the strain arise from a second-order harmonic response localized at the phase boundaries. Strain and dissipation data, backed by thermodynamic calculations, suggest that the source of the enhanced electromechanical response is the motion of phase boundaries. These findings elucidate the key role of labile phase boundaries, both natural and artificial, in achieving thin films with giant electromechanical properties.
Adiabatically driven Brownian pumps
(2013-07-08)
Rozenbaum, Viktor M.
;
Makhnovskii, Yurii A.
;
Shapochkina, Irina V.
;
Sheu, Sheh-Yi
;
Yang, Dah-Yen
We investigate a Brownian pump which, being powered by a flashing ratchet mechanism, produces net particle transport through a membrane. The extension of the Parrondo's approach developed for reversible Brownian motors [Parrondo, Phys. Rev. E 57, 7297 (1998)] to adiabatically driven pumps is given. We demonstrate that the pumping mechanism becomes especially efficient when the time variation of the potential occurs adiabatically fast or adiabatically slow, in perfect analogy with adiabatically driven Brownian motors which exhibit high efficiency [Rozenbaum et al., Phys. Rev. E 85, 041116 (2012)]. At the same time, the efficiency of the pumping mechanism is shown to be less than that of Brownian motors due to fluctuations of the number of particles in the membrane.
Self-assembly of hierarchical MoSx/CNT nanocomposites (2 < x < 3): towards high performance anode materials for lithium ion batteries
(2013-07-09)
Shi, Yumeng
;
Wang, Ye
;
Wong, Jen It
;
Tan, Alex Yuan Sheng
;
Hsu, Chang-Lung
Two dimension (2D) layered molybdenum disulfide (MoS2) has emerged as a promising candidate for the anode material in lithium ion batteries (LIBs). Herein, 2D MoSx (2 <= x <= 3) nanosheet-coated 1D multiwall carbon nanotubes (MWNTs) nanocomposites with hierarchical architecture were synthesized via a high-throughput solvent thermal method under low temperature at 2006 degrees C. The unique hierarchical nanostructures with MWNTs backbone and nanosheets of MoSx have significantly promoted the electrode performance in LIBs. Every single MoSx nanosheet interconnect to MWNTs centers with maximized exposed electrochemical active sites, which significantly enhance ion diffusion efficiency and accommodate volume expansion during the electrochemical reaction. A remarkably high specific capacity (i.e., >1000 mAh/g) was achieved at the current density of 50 mA g(-1), which is much higher than theoretical numbers for either MWNTs or MoS2 along (similar to 372 and similar to 670 mAh/g, respectively). We anticipate 2D nanosheets/1D MWNTs nanocomposites will be promising materials in new generation practical LIBs.
Flexible micro-system and fabrication method thereof
(2013-07-09)
Chao Tzu-Yuan
;
Liang Chia-Wei
;
Cheng Yu-Ting
A fabrication method for integrating chip(s) onto a flexible substrate in forming a flexible micro-system. The method includes a low-temperature flip-chip and a wafer-level fabrication process. Using the low-temperature flip-chip technique, the chip is bonded metallically onto the flexible substrate. To separate the flexible substrate from the substrate, etching is used to remove the sacrificial layer underneath the flexible substrate. The instant disclosure applies standardized micro-fabrication process for integrating chip(s) onto the flexible substrate. Without using special materials or fabrication procedures, the instant disclosure offers a cost-effective fabrication method for flexible micro-systems.
Wetted wall venturi scrubber with a 2-stage venturi throat
(2013-07-09)
Tsai Chuen-Jinn
A venturi scrubber which avoids clogging in the throat by dust particles is developed. The scrubber includes a venturi tube, two scrubbing fluid conduits and a storage tank. The venturi tube has a converging section, a diverging section and a throat section which is connected between the converging section and the diverging section. The scrubbing fluid conduit has a top end connected with the bottom end of the converging section of the venturi tube, and a bottom end extending into the storage tank. Thereby, scrubbing fluid can be guided directly into the storage tank without passing through the throat section. As a result, the clogging of dust particles on the converging section of the venturi throat can be minimized and the abnormal increase in the pressure drop of the air flow through the throat can also be avoided.
Self-assembly of hierarchical MoSx/CNT nanocomposites (2<x<3): towards high performance anode materials for lithium ion batteries
(2013-07-09)
Shi, Yumeng
;
Wang, Ye
;
Wong, Jen It
;
Tan, Alex Yuan Sheng
;
Hsu, Chang-Lung
Two dimension (2D) layered molybdenum disulfide (MoS2) has emerged as a promising candidate for the anode material in lithium ion batteries (LIBs). Herein, 2D MoSx (2 <= x <= 3) nanosheet-coated 1D multiwall carbon nanotubes (MWNTs) nanocomposites with hierarchical architecture were synthesized via a high-throughput solvent thermal method under low temperature at 2006 degrees C. The unique hierarchical nanostructures with MWNTs backbone and nanosheets of MoSx have significantly promoted the electrode performance in LIBs. Every single MoSx nanosheet interconnect to MWNTs centers with maximized exposed electrochemical active sites, which significantly enhance ion diffusion efficiency and accommodate volume expansion during the electrochemical reaction. A remarkably high specific capacity (i.e., >1000 mAh/g) was achieved at the current density of 50 mA g(-1), which is much higher than theoretical numbers for either MWNTs or MoS2 along (similar to 372 and similar to 670 mAh/g, respectively). We anticipate 2D nanosheets/1D MWNTs nanocomposites will be promising materials in new generation practical LIBs.
Method for face recognition and synthesis
(2013-07-09)
Lee Ping-Han
;
Hung Yi-Ping
A method of recognizing an object in an image is provided, the method comprises the following steps. The image having the object is provided, and principal traits of the object are encoded in order to generate a first trait code. The first trait code is compared with data stored in a database so as to obtain a plurality of differences. A minimum of the plurality of differences is found. This method can be applied to synthesize human faces.
Sensing element integrating silicon nanowire gated-diodes, manufacturing method and detecting system thereof
(2013-07-09)
Sheu Jeng-Tzong
;
Chen Chen-Chia
The invention disclosed a sensing element integrating silicon nanowire gated-diodes with microfluidic channel, a manufacturing method and a detecting system thereof. The sensing element integrating silicon nanowire gated-diodes with a microfluidic channel includes a silicon nanowire gated-diode, a plurality of reference electrodes, a passivation layer and a microfluidic channel. The reference electrodes are formed on the silicon nanowire gated-diodes, and the passivation layer having a surface decorated with chemical materials is used for covering the silicon nanowire gated-diodes, and the microfluidic channel is connected with the passivation layer. When a detecting sample is connected or absorbed on the surface of the passivation layer, the sensing element integrating silicon nanowire gated-diodes with the microfluidic channel can detect an electrical signal change.
靴帶式驅動電路
(2013-07-11)
何盈杰
;
張家齊
;
蘇朝琴
本發明係關於一種能利用其所具有之回授機制來抑制反轉電流以提升其資料傳輸速率，並降低其所消耗之功率的靴帶式驅動電路。其包括：一包含一前端輸入端、一第一反相器、一第二反相器、一第一PMOS電晶體、一第一NMOS電晶體、一第二PMOS電晶體、一第二NMOS電晶體、一第一電容、一第二電容及一前端輸出端的第一級升降壓電路；以及一包含一後端輸入端及一後端輸出端的後端CMOS反相器驅動電路。其中，前端輸出端除了連接至第二PMOS電晶體之汲極與第二NMOS電晶體之汲極以外，更連接至第一PMOS電晶體之閘極與第一NMOS電晶體之閘極，以形成一回授機制抑制反轉電流。
HIGH ELECTRON MOBILITY GaN-BASED TRANSISTOR STRUCTURE
(2013-07-11)
CHANG EDWARD YI
;
CHANG CHIA-HUA
;
LIN YUEH-CHIN
;
CHEN YU KONG
;
LIU SHIH-CHIEN
A high electron mobility GaN-based transistor structure comprises a substrate, an epitaxial GaN layer formed on the substrate, at least one ohmic contact layer formed on the epitaxial GaN layer, a metallic gate layer formed on the epitaxial GaN layer, and a diffusion barrier layer interposed between the metallic gate layer and the epitaxial GaN layer. The diffusion barrier layer hinders metallic atoms of the metallic gate layer from diffusing into the epitaxial GaN layer, whereby are improved the electric characteristics and reliability of the GaN-based transistor.