Browsing by Issue Date, starting with "2013-08-21"
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Item type:Item, 可用於顯示器的光電元件(2013-08-21) ;范士岡 ;邱誠樸陳世強本發明提供一種可用於顯示器的光電元件,包含:一上電極板單元;一下電極板單元;一液體,受限制於該上與下電極板單元之間;以及複數第一核殼粒子與複數第二核殼粒子,均勻分散於該液體內。該等第一核殼粒子具有一第一顏色,該等第二核殼粒子具有與該第一顏色不同之一第二顏色。該等第一核殼粒子具有分別對應第一與第二操作頻率的兩個極化率為零的零交叉點,該等第二核殼粒子具有分別對應第三與第四操作頻率的兩個極化率為零的零交叉點。該第二操作頻率與該第四操作頻率係幾乎相等,且該第一與第三操作頻率係不相等。Item type:Item, 陀螺儀控制方法(2013-08-21) ;陳宗麟 ;紀建宇李嘉緯本發明係關於一種陀螺儀控制方法,其係藉由包括有一陀螺儀本體模組、一感測模組、以及一控制模組之一微機電陀螺儀配合一待測物而控制陀螺儀本體模組並運算出微機電陀螺儀所依附之待測物的一旋轉角度,其無需執行離線校正程序,便可線上補償其感測電路瑕疵及機械結構瑕疵所造成的誤差,且無需積分程序來達成,並且陀螺儀本體模組具有複數個系統參數,感測模組與陀螺儀本體模組耦合,以感測陀螺儀本體模組之一系統動態,以及控制模組係分別與陀螺儀本體模組及感測模組耦合,以接受感測模組所感測出之該系統動態。Item type:Item, 靜電放電保護裝置(2013-08-21) ;柯明道 ;許哲綸 ;周業甯 ;林耿立黃曄仁一種靜電放電保護裝置,包括一第一放電單元、一第二放電單元、一第一觸發單元以及一第二觸發單元。第一及第二放電單元串聯於一第一接觸墊與一第二接觸墊之間,用以釋放一靜電放電電流。當一靜電放電事件發生時,第一觸發單元觸發第一放電單元。當第一放電單元被觸發時,第二觸發單元觸發第二放電單元。Item type:Item, 語音辨識裝置及其辨識方法(2013-08-21) ;胡竹生 ;李明唐 ;王庭昭楊佳興本發明係揭露一種語音辨識裝置及其語音辨識方法,其係接收至少一關鍵詞以進行辨識,此關鍵詞包括至少一關鍵字。首先,接收關鍵字之一聲源訊號,以產生複數聲音訊號,進而將其轉換至頻域,形成複數聲頻訊號。接著,藉聲頻訊號擷取出一空間頻譜及其角度估測值。再來,利用空間頻譜定義至少一空間特徵參數輸出之,並依據角度估測值與聲頻訊號進行擷取與評估,輸出一巴塔恰里雅距離。最後,接收上述特徵與距離,以利用與其對應之檢測門檻值判斷關鍵詞之正確性,如此便可在極低訊噪比之環境下,仍達成相當強健的語音辨識率。Item type:Item, 靜電放電防護裝置及靜電放電防護電路(2013-08-21) ;柯明道 ;許哲綸 ;陳穩義 ;周業甯黃曄仁一種靜電放電防護裝置,包括基底、第一井區、第二井區、第一、第二、第三及第四擴散區、本體、第一及第二閘極。基底具有第一導電型。第一及第二井區具有第二導電型,並形成於基底之中。第一擴散區具有第三導電型,並形成於第一井區之中。本體具有第一導電型,並形成於基底、第一及第二井區之中。第二擴散區具有第三導電型,並形成於本體之中。第一閘極控制第一擴散區與本體之電性連接。第三擴散區具有第四導電型,並形成於本體之中。第四擴散區具有第四導電型,並形成於第二井區之中。第二閘極控制第三與第四擴散區之電性連接。Item type:Item, Cobalt magnetism in a superstructured metallic antiferromagnet Na0.825CoO2(2013-08-22) ;Young, Ben-Li ;Chu, P-Y. ;Juang, J. Y. ;Shu, G. J.Chou, F. C.The Na atomic ordering and the local Co magnetism, in a metallic antiferromagnet made of Na0.825CoO2, are investigated by nuclear magnetic-resonance (NMR) techniques. Multiple well-resolved NMR peaks of Na-23 and Co-59 are observed, which suggests a superlattice structure forming in this Na-vacant cobaltate. Examining clues from published x-ray data, we refine the lattice superstructure so as to obtain the best description for the peaks seen in our NMR data. Magnetic Co ions are found to form a striped structure, which produces nontrivial magnetism. Analyzing the NMR frequency shift for each peak, we observe a frequency-shift anomaly, i.e., the breakdown of linearity between the NMR shift (that is, the local susceptibility) and the bulk susceptibility. We find that the shift anomaly can be described by an additional susceptibility component emerging at similar to 60 K. Slow spin dynamics are observed near a metamagnetic transition where the spins flip between the antiferromagnetic and ferromagnetic orders. Unlike in ordinary spin glasses, this glassy behavior is induced by a magnetic field, which causes competition between the in-plane ferromagnetic and out-of-plane antiferromagnetic interactions, in a magnetic-frustrated triangular lattice.Item type:Item, Artificial Retinal System and Retinal Implant Chip Thereof(2013-08-22) ;WU Chun-Yu ;LIN Po-Kang ;CHIAO Chuan-Chin ;Pan Jui-WenYANG Wen-ChiaAn artificial retinal system includes an external optical device having an image generator and a background light generator, and a retinal implant chip having a solar cell and a stimulus generator. The stimulus generator is disposed to receive a target image projected by the image generator and a background light provided by the background light generator, and receives the electrical power from the solar cell. The stimulus generator includes an image sensing stimulator operable to convert the target image into electrical stimuli, and a contrast enhancer for reducing effect of the background light on the electrical stimuli.Item type:Item, Automatic event-triggered call-forwarding mechanism for mobile phones(2013-08-25) ;Lin, Yi-Bing ;Liou, Ren-Huang ;Chen, Yuan-Kai ;Wu, Zheng-Han資訊工程學系Call forwarding is a traditional telecom service that allows a user to forward incoming calls to another telephone number. call-forwarding algorithm (CFA) for mobile phones. By installing a software in a smartphone, call forwarding is automatically triggered (e.g., when the phone is plugged in a charger or is turned off) or disabled (e.g., when the phone is unplugged from the charger or is turned on). We investigate the performance of the CFA through analytic analysis, simulation, and measurement. Our study indicates that CFA is very feasible for commercial usage. Copyright (c) 2011 John Wiley & Sons, Ltd.Item type:Item, Periodic elastic nanodomains in ultrathin tetragonal-like BiFeO3 films(2013-08-26) ;Luo, Zhenlin ;Chen, Zuhuang ;Yang, Yuanjun ;Liu, Heng-JuiHuang, ChuanweiWe present a synchrotron grazing incidence x-ray diffraction analysis of the domain structure and polar symmetry of highly strained BiFeO3 (BFO) thin films grown on LaAlO3 substrate. We reveal the existence of periodic elastic nanodomains in the pure tetragonal-like BFO ultrathin films down to a thickness of 6 nm. A unique shear strain-accommodation mechanism is disclosed. We further demonstrate that the periodicity of the nanodomains increases with film thickness but deviates from the classical square root law in the ultrathin thickness regime (6-30 nm). Temperature-dependent experiments further reveal the disappearance of periodic modulation above similar to 90 degrees C due to a M-C-M-A structural phase transition.Item type:Item, Universal scaling of nonlinear conductance in the two-channel pseudogap Anderson model: Application for gate-tuned Kondo effect in magnetically doped graphene(2013-08-26) ;Lee, Tsung-Han ;Zhang, Kenneth Yi-Jie ;Chung, Chung-Hou ;Kirchner, Stefan電子物理學系Based on the noncrossing approximation, we calculate both the linear and nonlinear conductance within the two-lead two-channel single-impurity Anderson model where the conduction electron density of states vanishes in a power-law fashion proportional to vertical bar omega - mu(F)vertical bar(r) with r = 1 near the Fermi energy, appropriate for a hexagonal system. For given gate voltage, we address the universal crossover from a two-channel Kondo phase, argued to occur in doped graphene, to an unscreened local moment phase. We extract universal scaling functions in conductance governing charge transfer through the two-channel pseudogap Kondo impurity and discuss our results in the context of a recent scanning tunneling spectroscopy experiment on Co-doped graphene.Item type:Item, Synthesis of Neisseria meningitidis Serogroup W135 Capsular Oligosaccharides for Immunogenicity Comparison and Vaccine Development(2013-08-26) ;Wang, Chia-Hung ;Li, Shiou-Ting ;Lin, Tzu-Lung ;Cheng, Yang-YuSun, Tsung-HsienItem type:Item, Ultra-thin titanium nanolayers for plasmon-assisted enhancement of bioluminescence of chloroplast in biological light emitting devices (vol 103, 063703, 2013)(2013-08-26) ;Su, Yen Hsun ;Hsu, Chia-Yun ;Chang, Chung-Chien ;Tu, Sheng-LungShen, Yun-HweiItem type:Item, The metal grating design of plasmonic hybrid III-V/Si evanescent lasers(2013-08-26) ;Hsu, Min-Hsiang ;Lin, Chien-Chung ;Kuo, Hao-Chung ;光電系統研究所Institute of Photonic SystemA hybrid III-V/silicon laser design with a metal grating layer inserted in between is proposed and numerically studied. The metal grating layer is buried in a silicon ridge waveguide surrounded by silicon dioxide, and its structural parameters such as periodicity, width and depth can be varied for optimization purpose. The plasmonic effect originated from the grating layer can manage optical fields between III-V and silicon layers in hopes of dimension reduction. The substrate is planarized to minimize the bonding failure. A numerical algorithm with various combinations of metal grating and waveguide structural parameters was created and the optimal design with 730 nm grating period and 600 nm of buried waveguide ridge height was obtained by minimizing the corresponding laser threshold. With top AlInGaAs quantum wells and optimized design of hybrid metal/silicon waveguide, a 0.6 mu m(-1) threshold gain can be achieved. (C)2013 Optical Society of AmericaItem type:Item, Electrical stimulation method and apparatus to stimulate nerve fibers(2013-08-27) ;Choi Charles Tak-MingLee Yi-HsuanThe present invention provides an electrical stimulation method and apparatus to stimulate nerve fibers, turning on suitable combination of adjacent electrodes simultaneously to form virtual channels based on predetermined rules, so that the stimulation signal will generate or evoke a nerve response spectrum that matches the original signal spectrum presented as the input sound. The method includes the steps of receiving a sound signal by a receiving unit; dividing the received sound signal into a plurality of frequency bands by a processing unit; extracting a spectral peak from each of the frequency bands and determining a stimulation sequence of frequency bands by the processing unit; and selectively driving a plurality of electrode groups in a plurality of cycles based on the stimulation sequence of frequency bands and a determination rule by the processing unit, so that the nerve response that matches the original signal will be generated.Item type:Item, III-V metal-oxide-semiconductor device(2013-08-27) ;Chang Edward YiLin Yueh-ChinA hafnium oxide layer, between a III-V semiconductor layer and a metal oxide layer is used to prevent interaction between the III-V semiconductor layer and the metal oxide layer.Item type:Item, Linking hydrophobicity and hydrodynamics by the hybrid fluctuating hydrodynamics and molecular dynamics methodologies(2013-08-27) ;Voulgarakis, Nikolaos K. ;Shang, Barry Z. ;Chu, Jhih-Wei ;生物科技學系生物資訊及系統生物研究所The development of a hybrid fluctuating hydrodynamics (FHD) and molecular dynamics (MD) simulation method that combines the molecular dynamics of moving particles with the fluctuating hydrodynamics of solvent fields on Eulerian grid cells is presented. This method allows resolution of solute-solvent interfaces and realization of excluded volumes of particles in the presence of hydrodynamic coupling. With these capabilities, we show that the ubiquitous forces mediated by the solvent, hydrophobicity and hydrodynamics, can be linked in a mesoscopic simulation. The strategies we devise to overcome the numerical issues of mixing variables in the Eulerian and Lagrangian coordinate systems, i.e., using a pair of auxiliary fluids to realize the excluded volumes of particles and assigning collocating gridding systems on solutes to interface with solvent fields, are also presented. Simulation results show that the hybrid FHD and MD method can reproduce the solvation free energies and scaling laws of particles dynamics for hydrophobes of different sizes. The collapse of two hydrophobic particles was also simulated to illustrate that the hybrid FHD and MD method has the potential to be generally applied to study nanoscale self-assembly and dynamics-structure-function relationships of biomolecules.Item type:Item, Infrared absorption of 3-propenonyl (center dot CH2CHCO) radical generated upon photolysis of acryloyl chloride [CH2CHC(O)Cl] in solid para-H-2(2013-08-28) ;Das, Prasanta ;Lee, Yuan-Pern ;應用化學系 ;應用化學系分子科學碩博班Department of Applied ChemistryIrradiation at 193 nm of a p-H-2 matrix containing acryloyl chloride CH2CHC(O)Cl at 3.2 K yielded infrared absorption lines at 3143.6 (nu(1)), 3057.0 (nu(2)), 3048.0 (nu(3)), 2103.1 (nu(4)), 1461.0 (nu(5)), 1349.8 (nu(6)), 1223.7 (nu(11)+nu(12) or 2 nu(12)), 1092.8 (nu(8)), 918.1 (nu(9)), 691.0 (nu(10)), 624.3 (nu(11)), and 597.1 (nu(12)) cm (1) that are assigned to the 3-propenonyl (center dot CH2CHCO) radical. The assignments are based on the photolytic behavior and a comparison of observed vibrational wavenumbers and infrared intensities with those predicted with the B3PW91/aug-cc-pVDZ method. The observation is consistent with a major radical formation channel CH2CHCO + Cl followed by escape of the Cl atom from the original p-H-2 cage. The observation of 3-propenonyl (center dot CH2CHCO) radical but not 3-propenalyl (s-cis- or s-trans-CH2CH(C) over dotO) radical indicates that the former is the most stable isomer and that the barrier heights for conversion from s-cis- or s-trans-CH2CH(C) over dotO to center dot CH2CHCO are small. (C) 2013 AIP Publishing LLC.Item type:Item, Electronic contribution to the enhancement of the ferromagnetic ordering temperature by Si substitution in Gd-5(SixGe1-x)(4)(2013-08-29) ;Tseng, Y. C. ;Paudyal, D. ;Mudryk, Ya ;Pecharsky, V. K.Gschneidner, K. A., Jr.By using a combination of x-ray spectroscopic and diffraction measurements at high pressures together with density functional theory (DFT) calculations, we show that the increase in Curie temperature T-C, induced by Si substitutions in Gd-5(SixGe1-x)(4) giant magnetocaloric materials is predominately electronically driven as opposed to lattice driven. Whereas, a lattice contraction with applied pressure increases the strength of exchange (magnetic) interactions between Gd spins, leading to a modest increase in T-C at a rate of 1.2 K/angstrom(3), much larger enhancements in T-C are obtained with Si doping for the same volume reduction (13.5 K/angstrom(3)), indicating that volume (lattice) effects are secondary. Similarly, an orthorhombic [O(II)] to monoclinic (M) structural phase transition is observed to take place with applied pressure in the paramagnetic state of a Gd-5(Si0.125Ge0.875)(4) sample at room temperature at a much smaller volume than needed to drive the same structural transition with Si doping, indicating that, even in the absence of magnetic order, electronic effects with Si doping dominate the energetics of structural transformations over lattice (volume) effects. DFT calculations show that the electronic mechanism behind this effect is a stronger Si 3p-Gd 5d than Ge 4p-Gd 5d hybridization, a critical ingredient in mediating indirect exchange interactions between localized Gd 4f spins. The results highlight the strong sensitivity of the magnetic ordering temperature to the nature of p-d hybridization, opening opportunities for tailoring the magnetocaloric properties of these compounds by substituting other p and rare-earth elements at the Si/Ge and Gd sites, respectively.Item type:Item, SRAM based on 6 transistor structure including a first inverter, a second inverter, a first pass-gate transistor, and a second pass-gate transistor(2013-08-29) ;CHUANG Ching-Te ;Jou Shyh-Jye ;Hwang Wei ;Lin Yi-WeiTsai Ming-ChienThe present invention provides a 6T SRAM including a first inverter, a second inverter, a first pass-gate transistor, and a second pass-gate transistor. The first inverter zs a first pull-up transistor and a first pull-down transistor. The second inverter includes a second pull-up transistor and a second pull-down transistor. The gate of the second pull-up transistor is coupled with the gate of the second pull-down transistor, and the drain of the second pull-up transistor is coupled with the drain of the second pull-down transistor. The SRAM can measure the trip voltage, the read disturb voltage, and the write margin by controlling the first bit line, the second bit line, the GND, the first word line, and the voltage source without changing of the physic parameter of the SRAM.Item type:Item, Oscillator based on a 6T SRAM for measuring the Bias Temperature Instability(2013-08-29) ;Chuang Ching-Te ;Jou Shyh-Jye ;Hwang Wei ;Tsai Ming-ChienLin Yi-WeiThe present invention provides an oscillator which is based on a 6T SRAM for measuring the Bias Temperature Instability. The oscillator includes a first control unit, a first inverter, a second control unit, and a second inverter. The first control unit is coupled with the first inverter. The second control unit is coupled with the second inverter. The first control unit and the second control unit is used to control the first inverter and the second inverter being selected, biased, and connected respectively, so that the NBTI and the PBTI of the SRAM can be measured separately, and the real time stability of the SRAM can be monitored immediately.