Browsing by Issue Date, starting with "2013-09-13"

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Comment on "Giant Plasticity of a Quantum Crystal"
(2013-09-13)
Zhou, C.
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Reichhardt, C.
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Graf, M. J.
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Su, J. -J.
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Balatsky, A. V.
Recognition of hydrogen isotopomers by an open-cage fullerene
(2013-09-13)
Murata, Yasujiro
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Chuang, Shih-Ching
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Tanabe, Fumiyuki
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Murata, Michihisa
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Komatsu, Koichi
We present our study on the recognition of hydrogen isotopes by an open-cage fullerene through determination of binding affinity of isotopes H-2/HD/D-2 with the open-cage fullerene and comparison of their relative molecular sizes through kinetic-isotope-release experiments. We took advantage of isotope H-2/D-2 exchange that generated an equilibrium mixture of H-2/HD/D-2 in a stainless steel autoclave to conduct high-pressure hydrogen insertion into an open-cage fullerene. The equilibrium constants of three isotopes with the open-cage fullerene were determined at various pressures and temperatures. Our results show a higher equilibrium constant for HD into open-cage fullerene than the other two isotopomers, which is consistent with its dipolar nature. D-2 molecule generally binds stronger than H-2 because of its heavier mass; however, the affinity for H-2 becomes larger than D-2 at lower temperature, when size effect becomes dominant. We further investigated the kinetics of H-2/HD/D-2 release from open-cage fullerene, proving their relative escaping rates. D-2 was found to be the smallest and H-2 the largest molecule. This notion has not only supported the observed inversion of relative binding affinities between H-2 and D-2, but also demonstrated that comparison of size difference of single molecules through non-convalent kinetic-isotope effect was applicable.
Large Magnetoresistance in Magnetically Coupled SrRuO3-CoFe2O4 Self-Assembled Nanostructures
(2013-09-14)
Liu, Heng-Jui
;
Vu-Thanh Tra
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Chen, Ying-Jiun
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Huang, Rong
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Duan, Chun-Gang
Ultrathin Limit of Exchange Bias Coupling at Oxide Multiferroic/Ferromagnetic Interfaces
(2013-09-14)
Huijben, M.
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Yu, P.
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Martin, L. W.
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Molegraaf, H. J. A.
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Chu, Y. -H.
Toward Wireless Backhaul Using Circuit Emulation Over Optical Packet-Switched Metro WDM Ring Network
(2013-09-15)
Chao, I-Fen
;
Yuang, Maria C.
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資訊工程學系
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Department of Computer Science
Optical WDM metro-ring networks have been considered to be promising solutions for wireless backhaul. In this paper, we propose an integrated traffic control scheme (ITCS), which facilitates circuit emulation service (CES) for wireless backhaul over a previously proposed experimental optical packet-switched WDM metro-ring network, HOPSMAN. The ITCS seamlessly integrates variable-bit-rate (VBR) CES wireless with connection-less best-effort data, satisfying stringent QoS requirements and retaining maximal network throughput. The ITCS ensures efficient setup of CES connections by employing a simple mean-rate-based distributed admission control followed by a novel slot-marking reservation. The total connection setup delay is comprised of the setup queueing delay and slot-marking delay. While the slot-marking delay is nearly a ring time, the mean setup queueing delay is formally computed through an accurate approximation based on an M/G/m queueing analysis. We show simulation results to demonstrate that the ITCS accommodates remarkably high CES traffic loads while satisfying a wide range of delay requirements for wireless backhaul. Taking the background best-effort traffic into account, ITCS achieves exceedingly low delay, jitter, and delay bound for CES under various traffic loads and burstiness.
Investigation of the effects of ultrasonic vibration-assisted micro-upsetting on brass
(2013-09-15)
Hung, Jung-Chung
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Tsai, Yu-Chung
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機械工程學系
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Department of Mechanical Engineering
Ultrasonic vibration is widely applied in traditional metal forming to soften material and to increase formability. However, the effects of ultrasonic vibration on miniaturized workpieces must be studied before applying its benefits to metallic micro-forming. This study investigates the effects of applying ultrasonic vibration to micro-forming, along with two other factors: specimen size and grain size. Conventional (without ultrasonic vibration) and ultrasonic vibration micro-upsetting experiments were conducted using brass (C2600). Specimens of three different dimensions (phi 3 x 4.5 mm, phi 2 x 3 mm, and phi 1 x 1.5 mm) and of three grain sizes (12 mu m, 44 mu m, and 90 mu m) were used. The conventional micro-upsetting (CMU) experiment revealed the size-effect in which flow stress decreased with the miniaturizing of the specimen. Flow stress also decreased as the grain size increased, but at a smaller magnitude than that of the size-effect. Results show that ultrasonic vibration-assisted micro-upsetting (UMU) decreased the flow stress effectively, especially in miniaturized specimens. The amount of decrease was related more to the dimension than to the grain size of the specimen. (C) 2013 Elsevier B.V. All rights reserved.
波束控制天線結構
(2013-09-16)
黃瑞彬
;
楊肅哲
;
黃獻東
一種波束控制天線結構,包括:兩個相互平行的金屬板、垂直設置於該兩個金屬板之間的天線、垂直設置於該兩個金屬板之間且輻射狀配置於天線周圍的複數個基板、以及偏壓電路。各基板上具有週期性排列的複數個金屬單元,而各金屬單元包括兩個相對設置而不相互接觸的金屬區及設置於該兩個金屬區之間用以耦接該兩個金屬區的電晶體,且各電晶體係電性連接至該偏壓電路。本發明可藉由調整基板上的電晶體的開/關來控制所述的天線結構的波束方向。
磁性奈米複合材料及其製造方法及應用
(2013-09-16)
李耀坤
;
詹富全
;
黃靜萍
本發明之一種磁性奈米複合材料,包括至少一磁性奈米粒子、一修飾層、一配位基團以及一高分子包覆層。修飾層係包括複數矽烷基團,並包覆至少部分磁性奈米粒子,且修飾層具有複數凹部。配位基團係連結於修飾層之凹部。高分子包覆層係連結修飾層。本發明另提供一種磁性奈米複合材料之製造方法以及磁性奈米複合材料應用於蛋白質之純化。
High voltage characteristics of junctionless poly-silicon thin film transistors
(2013-09-16)
Cheng, Ya-Chi
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Wu, Yung-Chun
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Chen, Hung-Bin
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Han, Ming-Hung
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Lu, Nan-Heng
The breakdown voltage (V-BD) and breakdown mechanism of junctionless (JL) poly-Si thin film transistor (TFT) were compared to the conventional inversion-mode (IM) TFT using fabricated devices and 3D quantum-corrected hydrodynamic transport device simulation. The simulated results are correspondent with experimental ones. The analyses of electric field distributions in on-state show that the channel of JL devices can equally share the voltage like a resistor, because there are no junctions formed between channel and source/drain. The JL TFT shows excellent breakdown characteristics; the off-state V-BD of 53.4V is several times larger than V-BD of 9.5V in IM TFT with same device size. JL devices have large potential for high voltage power metal-oxide-semiconductor devices and circuit applications. (C) 2013 AIP Publishing LLC.
1/f noise in micrometer-sized ultrathin indium tin oxide films
(2013-09-16)
Yeh, Sheng-Shiuan
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Hsu, Wei-Ming
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Lee, Jui-Kan
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Lee, Yao-Jen
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Lin, Juhn-Jong
We have measured the low-frequency noises of ultrathin indium tin oxide films to investigate the effect of post annealing on the noise level. The noises obtained obey an approximate 1/f law in the frequency range f approximate to 0.1-20 Hz. The microstructures and grain sizes of our films were altered by adjusting the annealing conditions. An enhancement of the noise level was observed for those samples comprising smaller grains, where numerous grain boundaries exist. This enhancement in the noise level is ascribed to atomic diffusion along grain boundaries or dynamics of two-level systems near the grain boundaries. (C) 2013 AIP Publishing LLC.
纖鋅礦結構材料之非極性晶面
(2013-09-16)
張立
;
何焱騰
本發明係有關於一種成長纖鋅礦結構之新穎非極性()面磊晶層之方法，其包括：提供一具有鈣鈦礦(Perovskite)之單晶氧化物；選擇該單晶氧化物的一平面作為一基板；在該基板上以氣相沉積法生長一具有纖鋅礦結構半導體之非極性()面磊晶層。本發明亦提供一種以前述方法成長之非極性()晶面之磊晶層。
晶圓級封裝方法與封裝結構
(2013-09-16)
陳宗麟
;
練瑞虔
本發明提供一種晶圓級封裝方法與封裝結構,用以封裝第一晶圓與第二晶圓,第一晶圓具背面與定義有微機電元件的主動面,其包含下列步驟:於第一晶圓形成兩矽通孔,再形成第一連接件與第一接合環於主動面上,前者電性連接該些矽通孔之一者,後者圍繞微機電元件並電性連接該些矽通孔之另一者。於第二晶圓上形成電性連接的第二接合環與第二連接件。接著使第二晶圓面對第一晶圓之主動面,且第二接合環與第二連接件分別連接第一接合環與第一連接件。自第一晶圓之背面施加電壓於該些矽通孔,再施加外力使第二晶圓朝向第一晶圓擠壓以完成封裝。
有機薄膜電晶體
(2013-09-16)
陳皇銘
;
季維康
;
周德綱
本發明係提供一種有機薄膜電晶體,包括:閘極;源極;汲極;介電膜;以及有機半導體層,其中,該有機半導體層具有至少一個位於源極和汲極之間的溝槽,以提升感測靈敏度。
電流限制電路裝置
(2013-09-16)
陳宗麟
;
張翼
;
成維華
;
鄭泗東
;
鄭時龍
本發明係提供一種電流限制電路裝置，係連接一氮化鎵電晶體之一閘極，該電流限制電路包含：二極體、第一電晶體、第二電晶體、第一電阻、第二電阻、第三電阻，第一電晶體之源極與汲極係耦接於二極體，第二電晶體之汲極係耦接第一電晶體之閘極，第一電阻耦接二極體以及第一電晶體之源極，第二電阻一端耦接第二電晶體之源極，第三電阻一端耦接於第四電阻以及第一電晶體之閘極，另一端係耦接第二電晶體閘極，第一電晶體之汲極耦接於氮化鎵電晶體之閘極，當氮化鎵電晶體之閘極所流出之電流高於預定值時，第一電晶體係關閉，藉由限制該氮化鎵電晶體之閘極所流出之該電流，以提高該氮化鎵電晶體之崩潰電壓。
Significant improvement in the thermoelectric properties of zwitterionic polysquaraine composite films
(2013-09-16)
Ho, Mei-Chan
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Chao, Ching-Hsun
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Lo, An-Ya
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Chen, Chun-Hua
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Wu, Ren-Jye
In this study, the polysquaraine SQI(0.1), a zwitterionic pi-conjugated polymer, was adopted as the matrix for the preparation of flexible and freestanding films; the low band gap of this semiconducting polymer made it a natural choice for use as a thermoelectric (TE) polymer. To enhance their TE applications, both single-walled carbon nanotubes (SWNTs) and mesoporous carbon (i.e., CMK-3) were integrated into the SQI(0.1)-based films and the effects of doping with iodine were also investigated. Using scanning electron microscopy, the variations in morphology of these SQI(0.1)-based films were examined. Raman spectroscopy was used to study the pi-pi interactions between iodine and the carbon materials (Le., SWNT, CMK-3); X-ray diffraction and Raman spectroscopy to investigate the intercalation of the doped iodine in the composite films; and X-ray photoelectron spectroscopy to determine the valence state of the doped iodine. The TE properties of these materials were characterized in terms of the electrical conductivity (sigma), thermal conductivity (kappa), and Seebeck coefficient (S). The TE properties of the iodine-doped composite film prepared from SWNTs, CMK-3, and SQI(0.1) included a notable value of ZT (Figure of Merit) of 4.563 x 10(-3), which was 143% of that of the corresponding iodine-doped SQI(0.1) film. (c) 2013 Elsevier B.V. All rights reserved.
微藻減碳之沼氣發電系統及其方法
(2013-09-16)
曾慶平
;
林志生
;
陳俊勳
本發明係有關於一種利用微藻減除二氧化碳之沼氣發電系統及其方法，系統中整合沼氣生產、沼氣純化、微藻類培養、發電、熱回收等單元於單一系統，並在培養微藻類過程中將沼氣中所含以及發電所產生的二氧化碳做為光合作用之碳源，減少沼氣內與發電廢氣中所含之二氧化碳，進而達到碳零釋放的目標。
上橋式驅動電路
(2013-09-16)
陳宗麟
;
張翼
;
成維華
;
鄭泗東
;
鄭時龍
本發明係提供一上橋式驅動電路適用於上橋功率電晶體驅動,其包含一自舉式電路及一電位位準轉換器。在電位位準轉換器的設計中,利用二極體來限制其中的電晶體的汲極-源極電壓差,再利用電容來承受高電壓差。因此,驅動電路中不需要具高崩潰電壓的電晶體例如LDMOS。本發明可由一般的IC製程製作具高崩潰電壓的電容,因此所設計的驅動電路可整合於積體電路中。
具有漸變含量之電洞穿隧層之發光元件
(2013-09-16)
王朝勳
;
郭浩中
一種具有漸變含量之電洞穿隧層之發光元件,包含:基板;n-型半導體層,設置在基板上,n-型半導體層具有第一部份及第二部份;具有漸變含量之電洞穿隧層,設置在n-型半導體層之第一部份上;電子阻擋層,設置在具有漸變含量之電洞穿隧層上;p-型半導體層,設置在電子阻擋層上;第一電極,設置在p-型半導體層上;以及第二電極,設置在n-型半導體層之第二部份上且與n-型導體層之第一部份上之結構電性分離,且第二電極與第一電極之電性相反,藉由具有漸變含量之電洞穿隧層做為多重量子井層,在寬能隙發光元件中,提高電洞傳遞效率,進一步的提高發光效率。
上橋驅動電路
(2013-09-16)
陳宗麟
;
張翼
;
成維華
;
鄭泗東
;
鄭時龍
本發明提供一種上橋驅動電路,其包含:功率電晶體、第一電晶體、第二電晶體、第二電容、第二二極體,以及啓動電路。其中啓動電路係耦接於一電阻與第二電容之間,用以作為一閘極驅動電路之一部分。此一電阻可以是功率電晶體的閘極等效電阻或是外加電阻。此驅動電路可以在不需浮動電源與負電壓源之情況下,使自舉電容具有足夠之時間充電,完成空乏型功率電晶體之開關切換。
撓性有機薄膜電晶體
(2013-09-16)
陳皇銘
;
季維康
;
周德綱
本發明係提供一種撓性有機薄膜電晶體,包括:撓性基板;形成於該撓性基板上之閘極;源極;汲極;形成於該閘極上之介電膜;以及形成於該介電膜上之有機半導體層。