Browsing by Issue Date, starting with "2013-09-23"

Now showing 1 - 20 of 30638

Highly efficient poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)/Si hybrid solar cells with imprinted nanopyramid structures
(2013-09-23)
Chen, Jheng-Yuan
;
Yu, Ming-Hung
;
Chang, Shun-Fa
;
Sun, Kien Wen
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應用化學系
High-efficiency hybrid solar cells based on nanostructured silicon and poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate), which were fabricated via a simple nanoimprint fabrication process, demonstrated an excellent power conversion efficiency of 10.86%. The complex and costly high-temperature photolithography and masking steps were replaced by techniques that are low-cost and capable of mass production. The nanopyramid structures fabricated on the silicon surface provided an antireflective effect and have a radial junction architecture that enhanced the light absorption and carrier collection efficiency. The short-circuit current density (J(sc)) of the hybrid solar cell with nanopyramid structures was greatly improved from 24.5 mA/cm(2) to 32.5 mA/cm(2) compared with that of a flat surface device. The highest solar cell efficiency was achieved on a 525 mu m-thick 2.3 Omega cm n-type Czochralski process (CZ) Si substrate with a designated area of 4 cm(2). (C) 2013 AIP Publishing LLC.
交大e-News第148期
(2013-09-23)
Secretariat
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國立交通大學秘書室
Temperature-dependent characteristics of junctionless bulk transistor
(2013-09-23)
Han, Ming-Hung
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Chen, Hung-Bin
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Yen, Shiang-Shiou
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Shao, Chi-Shen
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Chang, Chun-Yen
The temperature-dependent performance, including drain current (I-d) and gate capacitance (C-gg) of multi-gate junctionless (JL) bulk transistor for temperature (T) ranging from 150 K to 500 K, was investigated using 3D thermodynamic quantum-corrected device simulation. The combination effect of impurity scattering and phonon scattering is observed owing to the different temperature-dependent of mobility at low and high temperature. Since the C-gg of the JL device consists of a series combination of oxide capacitance (C-ox) and semiconductor channel capacitance (C-S) due to bulk conduction of the current, the C-gg at on-state (V-g = 1 V) shows much sensitive to the temperature than a conventional inversion-mode transistor. (C) 2013 AIP Publishing LLC.
Method for smoothing group III nitride semiconductor substrate
(2013-09-24)
Lee Wei-I
;
Chen Kuei-Ming
;
Wu Yin-Hao
;
Yeh Yen-Hsien
The invention discloses a smoothing method to decrease bowing of group III nitride semiconductor substrate. The certain face of group III nitride semiconductor substrates is etched under the appropriate etching recipe and time, the certain morphology such as rod-type and other structures are appeared at the certain face. And such structures releases the compressive stresses at these certain faces, resulting in clearly increasing the bowing radius of the group III nitride semiconductor substrates, finally decreasing the bowing phenomenon of the group III nitride semiconductor substrate.
The effect of coenzyme Q10 included by gamma-cyclodextrin on the growth of fission yeast studied by microscope Raman spectroscopy
(2013-09-24)
Nishida, Tatsuro
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Kaino, Tomohiro
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Ikarashi, Ryo
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Nakata, Daisuke
;
Terao, Keiji
The inclusion complex of coenzyme Q10 (CoQ10) by gamma-cyclodextrin (gamma-CD), CoQ10-CD complex, was recently developed. The addition of the CoQ10-CD complex recovered the growth of a fission yeast mutant strain, Delta dps1, which otherwise cannot grow well due to the lack of coenzyme Q producing ability. However, the oxygen consumption rate of this strain was not restored by the addition of the CoQ10-CD complex. The addition of two other anti-oxidative reagents, glutathione and ascorbic acid, also recovered the growth of the Delta dps1 strain as well. These results indicated that the recovery of the growth of Delta dps1 was brought about by the anti-oxidative property of CoQ10. The intensity of Raman spectra of Delta dps1 at 1602 cm(-1), which is prominently observed for the wild type of the fission yeast, was compared between before and after addition of the CoQ10-CD complex. The signal was very weakly observed for Delta dps1 and did not increase in intensity by the addition of the CoQ10-CD complex. These results suggested the recovery of the growth of Delta dps1 was brought about not by the restoration of respiration function of Delta dps1 but by the anti-oxidative property of CoQ10 to result in the decrease in the oxidative stress. (c) 2013 Elsevier B.V. All rights reserved.
Biomedical sensor device
(2013-09-24)
Chen Yu-Han
;
Liao Lun-De
;
Chao Paul C.-P.
;
Lin Chin-Teng
A biomedical sensor device includes a light source, a probe array, and a photo detector. The light source is configured for emitting infrared radiation. The probe array is contacted to a user's skin to detect an electric wave signal transmitted through the probe array from the skin. The probe array includes a substrate and a plurality of probes mounted on the substrate, wherein the substrate and the probes are non-opaque so that the infrared radiation may be transmitted through the probe array into the skin. The photo detector is configured to detect an infrared signal by measuring the infrared radiation absorption by the skin.
Oscillatory and sign-alternating behaviors of the Seebeck coefficients in carbon monatomic junctions
(2013-09-24)
Hsu, Bailey C.
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Yao, Hsuan-Te
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Liu, Wei-Lin
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Chen, Yu-Chang
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交大名義發表
In the framework of density functional theory combined with the Lippmann-Schwinger formalism in scattering approaches, we calculate the Seebeck coefficients for carbon atom chains sandwiched between aluminum electrodes from first principles. The most striking feature is that the Seebeck coefficients are length dependent, and can be negative (n type) or positive (p type) for odd- or even-numbered carbon atom chains. Alternating n-type and p-type material properties of carbon atom chains are due to the full-and half-filled pi* -orbital states near the chemical potential.
Method and non-transitory computer readable medium thereof for thermal analysis modeling
(2013-09-24)
Chen Chien-Chang
;
Cheng Yu-Ting
A method and a non-transitory computer readable medium thereof for thermal analysis modeling are provided. The method includes establishing an electrothermal network π model on the basis of electronic modules of an electronic system to define a heat source, propagation paths and a common base of the electronic system. Observation points in the electronic system are defined, in which each observation point is located at an isothermal surface enclosing a volume surrounding a reference point, and where the reference point is the heat source or one observation point. A heat conduction temperature difference and a heat convection temperature difference are calculated according to a power density function, a thermal conductivity coefficient and a distance vector between the reference point and each observation point. A temperature distribution is established according to the heat conduction and the heat convection temperature difference and a defined temperature of the common base.
DIGITAL SENSING APPARATUS AND DIGITAL READOUT MODULE THEREOF
(2013-09-26)
LAI Kelvin Yi-Tse
;
LEE Chen-Yi
A digital sensing apparatus includes a sensing unit capable of providing a sensing response associated with an environmental parameter, and a digital readout module including a reading unit for generating a pulse signal having a pulse width as sociated with the sensing response, and a converting unit. The converting unit includes a clock signal generator for generating a variable-frequency clock signal, and a counter operable to count a width value of the pulse width of the pulse signal using the clock signal, so as to generate a digital sensing code. The frequency of the clock signal from the clock signal generator is adjustable to adjust resolution of the width value of the pulse width of the pulse signal.
Structure of native oligomeric Sprouty2 by electron microscopy and its property of electroconductivity
(2013-09-27)
Chen, Feng-Jung
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Lee, Kuan-Wei
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Lai, Chun-Chieh
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Lee, Sue-Ping
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Shen, Hsiao-Hsuian
Receptor tyrosine kinases (RTKs) regulate many cellular processes, and Sprouty2 (Spry2) is known as an important regulator of RTK signaling pathways. Therefore, it is worth investigating the properties of Spry2 in more detail. In this study, we found that Spry2 is able to self-assemble into oligomers with a high-affinity KD value of approximately 16 nM, as determined through BIAcore surface plasmon resonance analysis. The three-dimensional (3D) structure of Spry2 was resolved using an electron microscopy (EM) single-particle reconstruction approach, which revealed that Spry2 is donut-shaped with two lip-cover domains. Furthermore, the method of energy dispersive spectrum obtained through EM was analyzed to determine the elements carried by Spry2, and the results demonstrated that Spry2 is a silicon- and iron-containing protein. The silicon may contribute to the electroconductivity of Spry2, and this property exhibits a concentration-dependent feature. This study provides the first report of a silicon- and iron-containing protein, and its 3D structure may allow us (1) to study the potential mechanism through the signal transduction is controlled by switching the electronic transfer on or off and (2) to develop a new type of conductor or even semiconductor using biological or half-biological hybrid materials in the future. (C) 2013 Elsevier Inc. All rights reserved.
Fisher information metric for the Langevin equation and least informative models of continuous stochastic dynamics
(2013-09-28)
Haas, Kevin R.
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Yang, Haw
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Chu, Jhih-Wei
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生物科技學系
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生物資訊及系統生物研究所
The evaluation of the Fisher information matrix for the probability density of trajectories generated by the over-damped Langevin dynamics at equilibrium is presented. The framework we developed is general and applicable to any arbitrary potential of mean force where the parameter set is now the full space dependent function. Leveraging an innovative Hermitian form of the corresponding Fokker-Planck equation allows for an eigenbasis decomposition of the time propagation probability density. This formulation motivates the use of the square root of the equilibrium probability density as the basis for evaluating the Fisher information of trajectories with the essential advantage that the Fisher information matrix in the specified parameter space is constant. This outcome greatly eases the calculation of information content in the parameter space via a line integral. In the continuum limit, a simple analytical form can be derived to explicitly reveal the physical origin of the information content in equilibrium trajectories. This methodology also allows deduction of least informative dynamics models from known or available observables that are either dynamical or static in nature. The minimum information optimization of dynamics is performed for a set of different constraints to illustrate the generality of the proposed methodology. (C) 2013 AIP Publishing LLC.
Abnormal threshold voltage shift under hot carrier stress in Ti1-xNx/HfO2 p-channel metal-oxide-semiconductor field-effect transistors
(2013-09-28)
Tsai, Jyun-Yu
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Chang, Ting-Chang
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Lo, Wen-Hung
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Ho, Szu-Han
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Chen, Ching-En
This work investigates the channel hot carrier (CHC) effect in HfO2/Ti1-xNx p-channel metal oxide semiconductor field effect transistors (p-MOSFETs). Generally, the subthreshold swing (S. S.) should increase during CHC stress (CHCS), since interface states will be generated near the drain side under high electric field due to drain voltage (V-d). However, our experimental data indicate that S. S. has no evident change under CHCS, but threshold voltage (V-th) shifts positively. This result can be attributed to hot carrier injected into high-k dielectric near the drain side. Meanwhile, it is surprising that such V-th degradation is not observed in the saturation region during stress. Therefore, drain-induced-barrier-lowering (DIBL) as a result of CHC-induced electron trapping is proposed to explain the different V-th behaviors in the linear and saturation regions. Additionally, the influence of different nitrogen concentrations in HfO2/Ti1-xNx p-MOSFETs on CHCS is also investigated in this work. Since nitrogen diffuses to SiO2/Si interface induced pre-N-it occurring to degrades channel mobility during the annealing process, a device with more nitrogen shows slightly less impact ionization, leading to insignificant charge trapping-induced DIBL behavior. (C) 2013 AIP Publishing LLC.
Simulation study of type-II Ge/Si quantum dot for solar cell applications
(2013-09-28)
Hu, Weiguo
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Rahman, Mohammad Maksudur
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Lee, Ming-Yi
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Li, Yiming
;
Samukawa, Seiji
The electronic structure, miniband formation conditions, and required process parameters of type-II Ge/Si quantum dots are calculated using a 3D finite element method. We further estimate the device conversion efficiency and optimize the appropriate operation conditions. By using the crystalline silicon as the matrix, the explored intermediate band solar cell (IBSC) may not be suitable for 1 sun application, but it is a great value under concentration application. By considering an appropriate H-passivation treatment on amorphous silicon, the type II Ge/Si IBSC can achieve 44.0% conversion efficiency under 1 sun application. (C) 2013 AIP Publishing LLC.
Interface and thickness tuning for blade coated small-molecule organic light-emitting diodes with high power efficiency
(2013-09-28)
Chang, Yu-Fan
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Chiu, Yu-Chian
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Chang, Hao-Wen
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Wang, Yi-Siang
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Shih, Yi-Lun
We developed a general method based on fluorescence microscopy to characterize the interface dissolution in multi-layer organic light-emitting diodes (OLEDs) by blade coating. A sharp bi-layer edge was created before blade coating, with the bottom layer being insoluble and top layer soluble. After blade coating, fluorescence images showed that the edge of the top layer shifted when the layer dissolved completely, whereas the bottom layer's edge remained in place as a positioning mark. The dissolution depth was determined to be 15-20 nm when the emissive-layer host of 2,6-bis (3-(9H-carbazol-9-yl) phenyl) pyridine (26DCzPPy) was coated on the hole-transport layer of N, N'-bis(naphthalen-1-yl)-N, N'-bis(phenyl)-benzidine(NPB), which was consistent with a sudden drop in efficiency of orange OLEDs with layer thickness below 20 nm. Thus, the layer thickness of OLEDs was optimized to stay more than 20 nm for blade coating. For a two-color white OLED with the structure TCTA/26DCzPPy:PO-01-TB:FIrpic/TPBI, efficiency was 24 cd/A and 8.5 lm/W at 1000 cd/m(2). For a three-color white OLED with Os(fptz)(2)(dhpm) added as the emitter, the efficiency was 12.3 cd/A and 3.7 lm/W at 1000 cd/m(2). For a green device with the structure TCTA/26DCzPPy: Ir(mppy)(3)/TPBI, the efficiency was 41.9 cd/A and 23.4 lm/W at 1000 cd/m(2). VC 2013 AIP Publishing LLC.
夢　是解放還是束縛
(2013-09-29)
張薇
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Department of Communication and Technology
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傳播與科技學系
《戲夢巴黎》為兩千零三年上映的法國電影，背景設定為一九六零年代學生運動興盛的巴黎。屏棄上街遊行、政治家演講等俗套的表現方式，而將焦點放在三位年輕學生的日常生活，藉此重現當年法國的社會情況與思想。
女朋友男朋友　她愛他愛他
(2013-09-29)
林凱元
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Department of Communication and Technology
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傳播與科技學系
這是一部名為愛與青春的詩篇，卻因現實與妥協而缺頁。它探討著愛的形狀，它希望我們靜靜的思考那些被遺忘的初衷。楊雅喆導演藉由三位主角微妙的互動呈現出他獨有的影視語言。
最怕清白當事人　下流正義
(2013-09-29)
彭士捷
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Department of Communication and Technology
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傳播與科技學系
由導演布萊德費曼所主導的《下流正義》之中，從身為律師的主角與代表正義的檢察官及法官之間的交鋒，佐以主角內心深處的掙扎與懊悔，可以一窺所謂的「正義」到底為何物。
追夢不晚　八十歲環島之旅
(2013-09-29)
陳彥文
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Department of Communication and Technology
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傳播與科技學系
大眾經常將「老」與「無用」劃上等號，認為老人只能夠被照顧，導演華天灝用《不老騎士——歐兜邁環台日記》告訴大家，老人不只是老人，也可以向大學生一樣熱血環島！
千甲農場上　快樂的一族
(2013-09-29)
陳祥豪
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Department of Communication and Technology
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傳播與科技學系
一群家園遭受八八風災侵襲的原住民，因為故鄉已經沒辦法生存而紛紛往都市另尋落腳地，但缺乏經濟基礎卻讓生活十分辛苦。去年引進社區供給農場的模式，才讓居民的生活漸趨穩定，也可以負擔下一代更好的生活環境。
千年陰陽師　祖孫同飆戲
(2013-09-29)
江岱燕
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Department of Communication and Technology
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傳播與科技學系
結城光流以安倍晴明的孫子為主角寫出了《少年陰陽師》，同樣以陰陽師為題材的《陰陽師》系列也是這方面很受好評的作品，究竟在不同作者的筆下，陰陽師們會以那些不同的面貌呈現在讀者面前呢？