Browsing by Issue Date, starting with "2013-10-21"

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光學讀寫頭
(2013-10-21)
邱一
;
施錫富
;
林健安
一種光學讀取頭，其包括：一矽基板，且在矽基板上設有一孔及一物鏡；一鐳射二極體，一135度傾斜反射鏡，及一135度傾斜全像反射鏡設於該矽基板上。透過二個135度傾斜反射鏡及全像光學元件以半導體製程的方法製造於光學平台的斜面結構上，使所有前述元件設置於同一直線帶上，再配合鐳射二極體及光感測元件的貼黏(bonding)設置，進而達到微型化的目的及縮短光路徑。
液晶透鏡及其製造方法
(2013-10-21)
廖凌嶢
;
黃乙白
;
林裕閔
;
謝漢萍
本發明係揭露一種液晶透鏡及其製造方法，其包含一第一基板、一第一電極、一第一配向層、一液晶層、一第二配向層、一電場均化層、至少一第二電極、一第三電極及一第二基板。第一電極設於第一基板上，第一配向層設於第一電極上，液晶層設於第一配向層上，第二配向層設於液晶層上，電場均化層設於第二配向層上，第二電極及第三電極設於電場均化層上，且第三電極設於第二電極之間。第二基板則設於第二電極及第三電極上。其中第三電極係配合第二電極產生電場梯度，並藉由電場均化層均勻影響液晶層，使液晶達到快速聚焦的效果。
Topology of conical/surface intersections among five low-lying electronic states of CO2: Multireference configuration interaction calculations
(2013-10-21)
Zhou, Bo
;
Zhu, Chaoyuan
;
Wen, Zhenyi
;
Jiang, Zhenyi
;
Yu, Jianguo
Multi-reference configuration interaction with single and double excitation method has been utilized to calculate the potential energy surfaces of the five low-lying electronic states (1)A(1), (1)A(2), (3)A(2), B-1(2), and B-3(2) of carbon dioxide molecule. Topology of intersections among these five states has been fully analyzed and is associated with double-well potential energy structure for every electronic state. The analytical potential energy surfaces based on the reproducing kernel Hilbert space method have been utilized for illustrating topology of surface crossings. Double surface seam lines between (1)A(1) and B-3(2) states have been found inside which the B-3(2) state is always lower in potential energy than the (1)A(1) state, and thus it leads to an angle bias collision dynamics. Several conical/surface intersections among these five low-lying states have been found to enrich dissociation pathways, and predissociation can even prefer bent-geometry channels. Especially, the dissociation of O(P-3) + CO can take place through the intersection between B-3(2) and B-1(2) states, and the intersection between (3)A(2) and B-1(2) states. c 2013 AIP Publishing LLC.
擴散光學斷層掃描之影像重建方法、裝置及電腦程式產品
(2013-10-21)
徐源煌
;
方偉騏
;
桑梓賢
一種擴散光學斷層掃描之影像重建方法，包含下述步驟：(a)利用一前算模型求得一權重矩陣；(b)利用奇異分解法得到該權重矩陣的逆矩陣；(c)利用待測物的一子區域取得的接收光線訊號計算一光線強度矩陣，並將光線強度矩陣與權重矩陣之逆矩陣相乘得到組織吸收係數矩陣；(d)運算構成一全區域的各子區域之組織吸收係數矩陣；及(e)整合各子區域的組織吸收係數矩陣並對應不同顏色以得到全區域的擴散光學斷層掃描影像。本發明之功效在於使用子區域用來縮小矩陣而可減少運算量，並使用奇異分解法用於逆求解運算，有利於硬體設計以及可攜式裝置的應用。
交大e-News第150期
(2013-10-21)
Secretariat
;
國立交通大學秘書室
多群組電極陣列的電極刺激系統及其方法
(2013-10-21)
蔡德明
;
徐建華
本發明係揭露一種多群組電極陣列的電極刺激系統及其方法，多群組電極陣列的電極刺激系統包含植入本體、電極陣列及電極控制器。植入本體具有承載面，承載面設置有電極陣列。電極陣列具有多個電極群組，電極群組具有多個電極，電極分別具有獨立的電源控制。電極控制器接收控制訊號以驅動對應電極，對應電極包含至少兩個電極，並透過獨立的電源控制調整供給對應電極電源，經由電交互作用使產生介於對應電極間的虛擬頻道。
讀取裝置
(2013-10-21)
孫慶成
;
余業緯
一種讀取裝置包含空間光調製器(Spatial Light Modulator；SLM)、變焦鏡組(Zoom Lens)、物鏡、影像擷取裝置與調整模組。空間光調製器用以提供讀取光。變焦鏡組配置於讀取光的光路中，使得讀取光通過變焦鏡組後，形成實像。物鏡用以將實像聚焦於同軸全像儲存媒體，進而產生繞射訊號。影像擷取裝置用以擷取繞射訊號。調整模組用以根據繞射訊號的品質，調整變焦鏡組之影像放大倍率。
Efficient continuous-wave self-Raman Yb:KGW laser with a shift of 89 cm(-1)
(2013-10-21)
Chang, M. T.
;
Zhuang, W. Z.
;
Su, K. W.
;
Yu, Y. T.
;
Chen, Y. F.
We demonstrated a continuous-wave (CW) self-Raman laser with high conversion efficiency by using Yb:KGW as the Raman crystal. The first Stokes line of wavelength centered at 1095.2 nm with spectral bandwidth of 8 nm and the cascaded Raman conversion wavelength at 1109.5 nm with spectral bandwidth of 3.4 nm were observed with a Raman shift of 89 cm(-1) with respect to the fundamental laser wavelength at 1085.0 nm with spectral bandwidth of 10 nm. The CW Raman output power of 1.7 W was attained under the diode pump power of 7.8 W which corresponds to the slope efficiency and the diode-to-Stokes optical conversion efficiency of 26.6% and 21.8%, respectively. (C)2013 Optical Society of America
液晶混合物、液晶顯示器及其操作方法
(2013-10-21)
林怡欣
;
陳宏山
;
徐旭寬
一種液晶混合物、液晶顯示器及其操作方法。液晶顯示器包括第一電極板、第二電極板及液晶混合物。液晶混合物包括藍相液晶與二色性染料，並配置在第一電極板與第二電極板之間。在操作液晶顯示器的過程中，入射光的方向係從第一電極板至第二電極板，並控制第一電極板與第二電極板之間的一偏壓，以使液晶顯示器呈現暗態或亮態。
一種形成鍺半導體表面保護層的方法
(2013-10-21)
劉柏村
;
黃震鑠
;
黃羿霖
;
鄭斯璘
;
施敏
本發明揭露一種形成鍺半導體表面保護層的方法，首先於矽晶圓上進行磊晶製程以形成鍺半導體層；再形成二氧化矽層於該鍺半導體層上以做為一閘極介電絕緣膜；通入超臨界流體至該二氧化矽層以及該鍺半導體層的界面而使該界面形成界面保護層；形成鋁薄膜於該二氧化矽層上以成為金氧半導體電容器的上電極，且以該熱蒸鍍法形成該鋁薄膜於該鍺半導體層的底部以做為該金氧半導體電容器的一下電極。
HCS-Neurons: identifying phenotypic changes in multi-neuron images upon drug treatments of high-content screening
(2013-10-22)
Charoenkwan, Phasit
;
Hwang, Eric
;
Cutler, Robert W.
;
Lee, Hua-Chin
;
Ko, Li-Wei
Background: High-content screening (HCS) has become a powerful tool for drug discovery. However, the discovery of drugs targeting neurons is still hampered by the inability to accurately identify and quantify the phenotypic changes of multiple neurons in a single image (named multi-neuron image) of a high-content screen. Therefore, it is desirable to develop an automated image analysis method for analyzing multi-neuron images. Results: We propose an automated analysis method with novel descriptors of neuromorphology features for analyzing HCS-based multi-neuron images, called HCS-neurons. To observe multiple phenotypic changes of neurons, we propose two kinds of descriptors which are neuron feature descriptor (NFD) of 13 neuromorphology features, e. g., neurite length, and generic feature descriptors (GFDs), e. g., Haralick texture. HCS-neurons can 1) automatically extract all quantitative phenotype features in both NFD and GFDs, 2) identify statistically significant phenotypic changes upon drug treatments using ANOVA and regression analysis, and 3) generate an accurate classifier to group neurons treated by different drug concentrations using support vector machine and an intelligent feature selection method. To evaluate HCS-neurons, we treated P19 neurons with nocodazole (a microtubule depolymerizing drug which has been shown to impair neurite development) at six concentrations ranging from 0 to 1000 ng/mL. The experimental results show that all the 13 features of NFD have statistically significant difference with respect to changes in various levels of nocodazole drug concentrations (NDC) and the phenotypic changes of neurites were consistent to the known effect of nocodazole in promoting neurite retraction. Three identified features, total neurite length, average neurite length, and average neurite area were able to achieve an independent test accuracy of 90.28% for the six-dosage classification problem. This NFD module and neuron image datasets are provided as a freely downloadable MatLab project at http://iclab.life.nctu.edu.tw/HCS-Neurons. Conclusions: Few automatic methods focus on analyzing multi-neuron images collected from HCS used in drug discovery. We provided an automatic HCS-based method for generating accurate classifiers to classify neurons based on their phenotypic changes upon drug treatments. The proposed HCS-neurons method is helpful in identifying and classifying chemical or biological molecules that alter the morphology of a group of neurons in HCS.
Device and method for diffusion optical tomography
(2013-10-22)
Fang Wai-Chi
;
Chen Tien-Ho
;
Kang Shih
;
Wu Shih-Yang
;
Cheng Ching-Ju
A device and method for diffusion optical tomography are disclosed. The device includes a sensing circuit with a plurality of light sources and sensors and an optical tomography element having a control unit, a computation unit and an image reconstruction unit. First, the computation unit constructs an image model of an object using optical parameters of the object, and performs decomposition on the image model. Then, the control unit instructs the light sources to emit light to the object, and receives a plurality of optical signals generated by the object in response to the light. Finally, the image reconstruction unit combines the optical signals and the decomposed image model and reconstructs an image of the object based on the combination of the optical signals and the decomposed image model.
Light emitting semiconductor device
(2013-10-22)
Wang Chao-Hsun
;
Li Zhen-Yu
;
Kuo Hao-Chung
A semiconductor light emitting device is disclosed, which comprises: a substrate having a first surface and a second surface; a first semiconductor conductive layer is disposed on the first surface of the substrate; an insert layer is disposed on the first semiconductor conductive layer; an active layer is disposed on the insert layer; a second semiconductor conductive layer is disposed on the active layer; a first electrode is disposed on the second semiconductor conductive layer; and a second electrode is disposed on the second surface of the substrate, in which the electric of the second electrode is opposite to that of the first electrode.
Method for treating group III nitride semiconductor
(2013-10-22)
Lee Wei-I
;
Hsu Ying-Chia
;
Yeh Yen-Hsien
;
Chen Kuei-Ming
The invention discloses a treating method to produce various patterns on the surface by using gases with ability to etch the group III nitride semiconductor in certain conditions. The selective etching makes some specific patterns on group III nitride semiconductor surface, and different forms of the patterns can be controlled by the selective etching conditions.
High-gain complementary inverter with ambipolar thin film transistors and fabrication thereof
(2013-10-22)
Liu Po-Tsun
;
Chou Yi-Teh
;
Teng Li-Feng
;
Fu Chur-Shyang
;
Shieh Han-Ping
The present invention relates to a high gain complementary inverter with ambipolar thin film transistors and fabrication thereof, comprising: a gate layer, a silica layer, a first active layer, a first source, a first drain, a second active layer, a second source and a second drain for fabrication cost and complexity reduction.
Improvement of optical transmittance and electrical properties for the Si quantum dot-embedded ZnO thin film
(2013-10-23)
Kuo, Kuang-Yang
;
Liu, Chuan-Cheng
;
Huang, Pin-Ruei
;
Hsu, Shu-Wei
;
Chuang, Wen-Ling
A Si quantum dot (QD)-embedded ZnO thin film is successfully fabricated on a p-type Si substrate using a ZnO/Si multilayer structure. Its optical transmittance is largely improved when increasing the annealing temperature, owing to the phase transformation from amorphous to nanocrystalline Si QDs embedded in the ZnO matrix. The sample annealed at 700A degrees C exhibits not only high optical transmittance in the long-wavelength range but also better electrical properties including low resistivity, small turn-on voltage, and high rectification ratio. By using ZnO as the QDs' matrix, the carrier transport is dominated by the multistep tunneling mechanism, the same as in a n-ZnO/p-Si heterojunction diode, which clearly differs from that using the traditional matrix materials. Hence, the carriers transport mainly in the ZnO matrix, not through the Si QDs. The unusual transport mechanism using ZnO as matrix promises the great potential for optoelectronic devices integrating Si QDs.
Ab Initio Chemical Kinetics for SiH2 + Si2H6 and SiH3 + Si2H5 Reactions and the Related Uninnolecular Decomposition of Si3H8 under a-Si/H CVD Conditions
(2013-10-24)
Raghunath, P.
;
Lin, M. C.
;
應用化學系
;
Department of Applied Chemistry
The kinetics and mechanisms for SiH2 + Si2H6 and SiH3 + Si2H5 reactions and the related unimolecular decomposition of Si3H8 have been investigated by ab initio molecular orbital theory based on the QCISD(T)/CBS//QCISD/6-311++G(d,p) method in conjunction with quantum statistical variational Rice-Ramsperger-Kassel-Marcus (RR.KM) calculations. For the barrierless radical association processes, their variational transition states have been characterized by the CASPT2//CASSCF method. The species involved in the study are known to coexist under CVD conditions. The results show that the association reaction of SiH2 and Si2H6 producing Si3H8 occurs by insertion via its lowest-energy path forming a loose hydrogen-bonding molecular complex with 8.3 kcal/mol binding energy; the reaction is exothermic by 55.0 kcal/mol. The chemically activated Si3H8 adduct can fragment by several paths, producing SiH4 + SiH3SiH (-0.7 kcal/mol), Si(SiH3)(2) + H-2 (-1.4 kcal/mol), and SiH3SiH2SiH + Hy (-1.4 kcal/mol). The predicted enthalpy changes as given agree well with available thermochemical data. Three other decomposition channels of Si3H8 occurring by Si-H or Si-Si breaking were found to be highly endothermic, and the reactions take place without a well-defined barrier. The heats of formation of Si3H8, SiH2SiH, Si2H4, n-Si3H7, Si(SiH3)(2), and SiH3SiH2SiH have been predicted and found to be in close agreement with those available data in the literature. The product branching rate constants for SiH2 + Si2H6 and SiH3 + Si2H3 reactions and the thermal unimolecular decomposition of Si3H8 for all low-energy paths have been calculated with multichannel variational RRKM theory covering varying P,T conditions typically employed in PECVD and Cat-CVD processes for hydrogenated amorphous silicon (a-Si/H) film growth. The results were also found to be in good agreement with available kinetic data. Our kinetic results may be employed to model and control very large-area a-Si/H film growth for a new generation of solar cell applications.
Quantum chemical calculation of intramolecular vibrational redistribution and vibrational energy transfer of water clusters
(2013-10-24)
Niu, Y. L.
;
Pang, R.
;
Zhu, C. Y.
;
Hayashi, M.
;
Fujimura, Y.
In present letter the adiabatic approximation is applied to the intramolecular vibrational redistribution (IVR) of water clusters. The isotope, blocking and cluster-size effects are investigated. This letter also examines the assumption associated with the transition state theory applied to unimolecular reactions; that is, IVR is assumed to be completed before the reaction takes place. For this purpose, we choose to study (H2O)(2)H+ -> H2O+ H3O+, and (H2O)(2) -> 2H(2)O processes. In molecular clusters, the vibrational excitation energy transfer between different normal modes has been observed. This will also be investigated for the deuterated species of (HOD)(2)H+. (C) 2013 Elsevier B.V. All rights reserved.
Ionization/dissociation processes of methyl-substituted derivates of cyclopentanone in intense femtosecond laser field
(2013-10-24)
Wang, Qiaoqiao
;
Dyakov, Yuri A.
;
Wu, Di
;
Zhang, Dongdong
;
Jin, Mingxing
Ionization and dissociation of 2- and 3-methyl cyclopentanones have been investigated in molecular beams by their irradiation with intense 394 and 788 nm laser fields with pulse duration of 90 fs and intensity of 3 x 10(13)-4 x 10(14) W/cm(2). The analysis of the resulting mass spectra allowed us to discern the effects of methyl substitution and its position on the outcome of ionization/dissociation processes induced by the intense femtosecond laser field. Generalized Keldysh-Faisal-Reiss (g-KFR) and ab initio G3(MP2, CCSD)//B3LYP/6-31G*/RRKM theoretical calculations helped to uncover the formation mechanism of major ionic fragments observed in the mass spectra including C5H10+, C4H6O+, C3H3O+, C3H4O+, C3Hx+, and C2Hx+. (C) 2013 Elsevier B.V. All rights reserved.
Hypochlorous acid turn-on boron dipyrromethene probe based on oxidation of methyl phenyl sulfide
(2013-10-24)
Liu, Shi-Rong
;
Vedamalai, Mani
;
Wu, Shu-Pao
;
應用化學系
;
Department of Applied Chemistry
A boron dipyrromethene (BODIPY)-based fluorometric probe, HCS, has been successfully developed for the highly sensitive and selective detection of hypochlorous acid (HOCl). The probe is based on the specific HOCl-promoted oxidation of methyl phenyl sulfide. The reaction is accompanied by a 160-fold increase in the fluorescent quantum yield (from 0.003 to 0.480). The fluorescent turn-on mechanism is accomplished by suppression of photoinduced electron transfer (PET) from the methyl phenyl sulfide group to BODIPY. The fluorescence intensity of the reaction between HOCl and HCS shows a good linearity in the HOCl concentration range 1-10 mu M. The detection limit is 23.7 nM (S/N = 3). In addition, confocal fluorescence microscopy imaging using RAW264.7 macrophages demonstrates that the HCS probe could be an efficient fluorescent detector for HOCl in living cells. (C) 2013 Published by Elsevier B.V.