Browsing by Issue Date, starting with "2014-03-10"

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混血女子與叛亂丈夫：十九世紀砂拉越新堯灣的族群相遇
(2014-03-10)
羅烈師
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開放教育推動中心
;
Open Education Office
課程首頁本課程是由交通大學新文藝復興閱讀計畫提供。 96 年 8 月當各大學紛紛摩拳擦掌準備迎接新生的同時，交通大學校長吳重雨則因為一則來自於七月份泰晤士報，有關於英國首相布朗公布其夏日讀書清單的新聞中，看到了他對知識的尊重。在這同時，吳重雨校長也思考著，要如何為學生準備追求知識的環境和激發他們對知識的尊重與喜愛。台積電張忠謀董事長曾陳述他 18 歲進入哈佛那一年，博覽文史哲理工經典群籍，至此奠定了他求知的基礎，並借海明威名言，將其改為「哈佛這一年為人生可帶走的盛宴。」吳重雨校長以張董事長的學習為借鏡，認為學生固然能藉由自我閱讀的方式學習到豐沛的知識，但透過名人、大師親臨現場地介紹經典書籍，更能加深學子們對於書籍的認識與興趣，這也是「新文藝復興閱讀計劃」 ( 以下簡稱 : 「經典名著選讀」 ) 活動展開籌劃的緣由。於是，吳重雨校長便積極敦請「交大通識教育委員會」，接手籌備本計劃的相關活動，而該中心也成為實際施行本計畫的策動、開課以及認證單位。至此，期許交大學子藉由閱讀、聽講來提昇人文素養、開拓視野的「新文藝復興閱讀計劃」，就此展開。
Compound biomimetic structures for efficiency enhancement of Ga0.5In0.5P/GaAs/Ge triple-junction solar cells
(2014-03-10)
Hung, Mu-Min
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Han, Hau-Vei
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Hong, Chung-Yu
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Hong, Kuo-Hsuan
;
Yang, Tung-Ting
Biomimetic nanostructures have shown to enhance the optical absorption of Ga0.5In0.5P/GaAs/Ge triple junction solar cells due to excellent antireflective (AR) properties that, however, are highly dependent on their geometric dimensions. In practice, it is challenging to control fabrication conditions which produce nanostructures in ideal periodic arrangements and with tapered side-wall profiles, leading to sacrificed AR properties and solar cell performance. In this work, we introduce compound biomimetic nanostructures created by depositing a layer of silicon dioxide (SiO2) on top of titanium dioxide(TiO2) nanostructures for triple junction solar cells. The device exhibits photogenerated current and power conversion efficiency that are enhanced by similar to 8.9% and similar to 6.4%, respectively, after deposition due to their improved antireflection characteristics. We further investigate and verify the optical properties of compound structures via a rigorous coupled wave analysis model. The additional SiO2 layer not only improves the geometric profile, but also serves as a double-layer dielectric coating. It is concluded that the compound biomimetic nanostructures exhibit superior AR properties that are relatively insensitive to fabrication constraints. Therefore, the compound approach can be widely adopted for versatile optoelectronic devices and applications. (C)2014 Optical Society of America
Type II GaSb quantum ring solar cells under concentrated sunlight
(2014-03-10)
Tsai, Che-Pin
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Hsu, Shun-Chieh
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Lin, Shih-Yen
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Chang, Ching-Wen
;
Tu, Li-Wei
A type II GaSb quantum ring solar cell is fabricated and measured under the concentrated sunlight. The external quantum efficiency confirms the extended absorption from the quantum rings at long wavelength coinciding with the photoluminescence results. The short-circuit current of the quantum ring devices is 5.1% to 9.9% more than the GaAs reference's under various concentrations. While the quantum ring solar cell does not exceed its GaAs counterpart in efficiency under one-sun, the recovery of the open-circuit voltages at higher concentration helps to reverse the situation. A slightly higher efficiency (10.31% vs. 10.29%) is reported for the quantum ring device against the GaAs one. (C)2014 Optical Society of America
Optical properties associated with strain relaxations in thick InGaN epitaxial films
(2014-03-10)
Tsai, Wen-Che
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Hsu, Chia-He
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Fu, Shao-Fu
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Lee, Fang-Wei
;
Chen, Chin-Yu
Structural and optical properties of thick InGaN layers with strain and composition inhomogeneities are investigated. High resolution x-ray diffractions (XRD) and reciprocal space mapping (RSM) along an asymmetric axis reveal that the In composition inhomogeneity is accompanied by strain relaxations during the growth of thick InGaN layers. According to the structural analysis, the commonly observed double photoluminescence (PL) peaks have been confirmed to be associated with the strain relaxation in thick InGaN films. Temperature-dependent PL measurements further indicate that the relaxed phase in InGaN films exhibits better emission efficiency than the strained phase. Recombination dynamics reveal that the carrier localization effect is more pronounced in the relaxed phase due to the compositional pulling effect. The correlations between emission efficiency and localization effect in thick InGaN films are discussed. (C)2014 Optical Society of America
GaN-based light-emitting diodes with graphene/indium tin oxide transparent layer
(2014-03-10)
Lai, Wei-Chih
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Lin, Chih-Nan
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Lai, Yi-Chun
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Yu, Peichen
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Chi, Gou Chung
We have demonstrated a gallium nitride (GaN)-based green light-emitting diode (LED) with graphene/indium tin oxide (ITO) transparent contact. The ohmic characteristic of the p-GaN and graphene/ITO contact could be preformed by annealing at 500 degrees C for 5 min. The specific contact resistance of p-GaN/graphene/ITO (3.72E-3 Omega(center dot)cm(2)) is one order less than that of p-GaN/ITO. In addition, the 20-mA forward voltage of LEDs with graphene/ITO transparent (3.05 V) is 0.09 V lower than that of ITO LEDs (3.14 V). Besides, We have got an output power enhancement of 11% on LEDs with graphene/ITO transparent contact. (C)2014 Optical Society of America
A hybrid simulated method for analyzing the optical efficiency of a head-mounted display with a quasi-crystal OLED panel
(2014-03-10)
Chang, Kao-Der
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Li, Chang-Yi
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Pan, Jui-Wen
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Cheng, Kuei-Yuan
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光電系統研究所
Organic light emitting diodes (OLEDs) with a quasi-crystal (QC) structure are analyzed and applied in a head-mounted display (HMD) system in this study. We adopt a hybrid simulated method to evaluate the light extraction efficiency (LEE) and far-field pattern in the air, and study the relationship between them. The simulation results show that OLEDs implanted with the QC structure can provide a collimated far-field pattern to increase the brightness. Using this 10-fold QC arrangement the maxima LEE of the OLEDs can be increased by 1.20 times. Compared with conventional OLEDs, the viewing angle of the OLED panel decreases from 120 degrees to 26 degrees with an improvement in the optical efficiency of the HMD system by 2.66 times. Moreover, the normalized on-axis intensity in the pupil of the eyepiece can be enlarged up to 3.95 times which suggests that the OLED panel can save 74.68% energy while achieving the same onaxis intensity as conventional OLEDs. (c) 2014 Optical Society of America
Reduced optical loss in mechanically stacked multi-junction organic solar cells exhibiting complementary absorptions
(2014-03-10)
Lin, Yen-Tseng
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Chou, Chu-Hsien
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Chen, Fang-Chung
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Chu, Chih-Wei
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Hsu, Chain-Shu
This paper describes a promising approach toward preparing effective electrical and optical interconnections for tandem organic photovoltaic devices (OPVs). The first subcell featured a semi-transparent electrode, which allowed a portion of the solar irradiation to pass through and to enter the second subcell exhibiting complementary absorption behavior. The resulting multi-junction OPV had multiple contacts such that the subcells could be easily connected either in series or in parallel. More importantly, we used UV-curable epoxy to "mechanically" stack the two subcells and to eliminate the air gap between them, thereby reducing the optical loss induced by mismatches of refractive indices. Therefore, an improved power conversion efficiency of approximately 6.5% has been achieved. (C) 2014 Optical Society of America
Investigation of on-current degradation behavior induced by surface hydrolysis effect under negative gate bias stress in amorphous InGaZnO thin-film transistors
(2014-03-10)
Liu, Kuan-Hsien
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Chang, Ting-Chang
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Chang, Kuan-Chang
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Tsai, Tsung-Ming
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Hsieh, Tien-Yu
This study investigates the electrical instability under negative gate bias stress (NGBS) induced by surface hydrolysis effect. Electrical characteristics exhibit instability for amorphous InGaZnO (a-IGZO) Thin Film Transistors (TFTs) under NGBS, in which on-current degradation and current crowding phenomenon can be observed. When the negative gate bias is applied on the TFT, hydrogen ions will dissociate from ZnO-H bonds and the dissociated hydrogen ions will cause electrical instability under NGBS. The ISE-Technology Computer Aided Design simulation tool and moisture partial pressure modulation measurement are utilized to clarify the anomalous degradation behavior. (C) 2014 AIP Publishing LLC.
High-efficiency backlight module with two guiding modes
(2014-03-10)
Li, Chang-Yi
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Pan, Jui-Wen
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光電系統研究所
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生醫電子轉譯研究中心
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Institute of Photonic System
We propose a design for a high-efficiency backlight module that does not require a brightness enhancement film (BEF). With the high-efficiency backlight module it is possible to achieve almost the same half-luminance angle as a conventional edge-lit backlight module can achieve. The backlight system is comprised of a crisscross light guide plate (LGP) and one diffuser sheet. The crisscross LGP is composed of a LGP and optically patterned film (OPF). The backlight module allows light to be extracted through the direct guiding mode and top guiding mode, respectively. We controlled arrangement of the microstructures to increase the optical efficiency and the uniformity by two modes. Compared to the conventional edge-lit backlight module, there is a two-fold improvement in both the total optical efficiency and on-axis luminance with the high-efficiency backlight module. (C) 2014 Optical Society of America
Controller apparatus for controlling a multiphase multilevel voltage source inverter and a method thereof
(2014-03-11)
Hu Jwu-Sheng
;
Chen Keng-Yuan
;
Tang Chi-Him
The present invention provides an apparatus for controlling a multiphase multilevel voltage source inverter. The apparatus includes a signal-generating unit and a converter. The signal-generating unit responds to an input signal to produce a switching strategy control signal and a duration timing control signal corresponding to the switching strategy control signal. The converting unit responds to the switching strategy control signal and the duration timing control signal to produce a switching signal. The voltage source inverter responds to the switching signal to generate a multiphase-and-multilevel AC voltage output.
Holographic model of a two-band superconductor
(2014-03-11)
Wen, Wen-Yu
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Wu, Mu-Sheng
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Wu, Shang-Yu
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物理研究所
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丘成桐中心
We construct a holographic two-band superconductor model with interband Josephson coupling. We investigate the effects the Josephson coupling has on the superconducting condensates and the critical temperature for their formation numerically, as well as analytically where possible. We calculate the ac conductivity and find it qualitatively similar to the single band superconductor. We investigate the nodal structure of our holographic two-band superconductor from the low temperature behavior of the thermal conductivity and find it nodeless.
與通訊對象相關之即時可重組電話號碼系統及運用該系統之通訊方法
(2014-03-11)
張明峰
;
林一平
一種與通訊對象相關之即時可重組電話號碼系統及運用該系統之通訊方法。該系統包含一電話號碼轉換表及一服務伺服器。該電話號碼轉換表包括多筆轉換記錄。該等轉換記錄的其中一筆記錄著一服務使用者電話號碼、一特定臨時電話號碼及一指定通訊對象電話號碼。該服務伺服器根據服務使用者所指定的指定通訊對象電話號碼，產生特定臨時電話號碼，並將服務使用者電話號碼及相對應的特定臨時電話號碼及指定通訊對象電話號碼記錄在電話號碼轉換表中，藉以使服務使用者與指定通訊對象通話或傳送簡訊時，可用該特定臨時電話號碼替換該服務使用者電話號碼，而不讓指定通訊對象知道服務使用者電話號碼。
用於減緩介金屬化合物成長之方法
(2014-03-11)
陳智
;
杜經寧
;
蕭翔耀
本發明係有關於一種用於減緩介金屬化合物成長之方法，步驟包含：(i)製備一基板元件，包括在一基板上電鍍至少一金屬墊層，接著在該金屬墊層上電鍍至少一很薄的一薄銲料，進行適當的熱處理製程；(ii)在該基板元件上再鍍上適當厚度的銲料；其中，該薄銲料經過適當的熱處理後，會與金屬墊之金屬反應形成一薄的介金屬化合物，因此可以在之後的迴銲製程抑制介金屬化合物的生成速率之效果，藉以減緩微小接點銲料與金屬墊上的金屬反應變成介金屬化合物。一旦介金屬化合物成長速率能被減緩，錫晶鬚(Sn whisker)的成長也可以被抑制。
半導體元件之參數萃取方法
(2014-03-11)
郭治群
;
葉國良
一種參數萃取方法，用以萃取一半導體元件的新增通道寬度，其步驟包括：提供一第一多閘指元件及一第二多閘指元件，兩者的閘指數目不相同；進行一去嵌化動作後，量測第一多閘指元件之第一有效電容值以及第二多閘指元件之第二有效電容值；根據第一與第二有效電容值對應於第一與第二多閘指元件的閘指數目的直線關係，以求得一斜率；執行三維電容模擬以計算半導體元件的雜散電容值；提供一長通道元件，並量測其閘極電容值，以求得一通道單位面積電容值；以及利用斜率、雜散電容值以及通道單位面積電容值，以計算得到半導體元件之新增通道寬度。
一種自動化專利交易平台系統
(2014-03-11)
李鎮宜
;
黃經堯
;
張志華
;
吳志偉
;
吳怡如
本發明揭露一種自動化專利交易平台系統，其主要元件包括有專利資料庫，會員資料庫，媒合運算裝置，分享運算裝置，非會員資料庫，以及授權與買賣運算裝置等元件以相互連接組合而成。本發明之操作方法亦可分為包括會員與非會員加入之方法，以及僅有會員加入之操作方法；故而本發明可提高專利的交易效率且能降低專利交易成本。
使用共用傳導層傳送晶片間多重信號之系統
(2014-03-11)
蘇朝琴
;
何盈杰
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黃博祥
本發明提供一種使用共用傳導層傳送晶片間多重信號之系統，其包括一第一晶片、一第二晶片、及一共用傳導層。該第一晶片至少具有第一晶片之第一金屬層墊及一第二金屬層墊。該第二晶片至少具有第二晶片之第一金屬層墊及一第二金屬層墊。該共用傳導層為導電材料，該共用傳導層直接黏合該第一晶片及該第二晶片，其中，第二晶片之第一金屬層墊係對齊該第一晶片之第一金屬層墊，以透過該共用傳導層而接收來自該第一晶片之第一金屬層墊之訊號，而不受來自其它該第一晶片及第二晶片之金屬層墊之訊號的影響。
Effect of ion-milled barriers on electron transport in micrometer-sized tunnel junctions
(2014-03-12)
Lee, Yen-Chi
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Lin, Yong-Han
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Wu, Jong-Ching
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Lin, Juhn-Jong
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電子物理學系
We studied the electron transport properties of micrometre-sized all-Al tunnel junctions (TJs) between 2 and 300 K, in which the AlOx layer grown by O-2 plasma was moderately Ar-ion-milled prior to top electrode deposition. In contrast to the direct tunnelling in the TJs whose barriers are intact (not ion-milled), the zero-bias conductances and the current-voltage characteristics of the TJs as processed are found to be best described by the fluctuation-induced tunnelling conduction mechanism. This observation indicates the formation of nanoscopic incomplete pinholes in the AlOx layer, owing to large junction-barrier interfacial roughness introduced by the ion-milling process. Topographical features revealed by the cross-sectional transmission electron microscopy imaging of the TJ stack conform to this result. This study is of relevance to cases in which ion-milling techniques are applied in tailoring the TJ properties.
Anomalous anticrossing of neutral exciton states in GaAs/AlGaAs quantum dots
(2014-03-12)
Kumar, S.
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Zallo, E.
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Liao, Y. H.
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Lin, P. Y.
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Trotta, R.
We study the effects of heavy hole-light hole (HH-LH) mixing on fine-structure and polarization properties of neutral excitons ( X-0) confined in single GaAs/AlGaAs quantum dots (QDs) under the application of anisotropic biaxial stress. In the large HH-LH mixing regime, these properties are substantially different from the usually observed properties in the case of small or no mixing. By varying the applied stress, the mixing in the initially strain-free QDs changes from similar to 0 to similar to 70% and an anomalous anticrossing of the X-0 bright states is observed. The latter is attributed to stress-induced rotation of the in-plane principal axis of the QD confinement potential. We show that the analysis of free-excitonic emission of bulk GaAs surrounding the QDs not only allows estimation of the stress and mixing in the QDs, but also provides the quantum-confinement-induced HH-LH splitting of the as-grown QDs.
REAL-TIME PEOPLE COUNTING SYSTEM USING LAYER SCANNING METHOD
(2014-03-13)
Lin Daw-Tung
;
Jhuang Dong-Han
Disclosed herein is a method for counting the number of the targets using the layer scanning method. The steps of this method includes constructing a background frame, filtering the noise of foreground frame and classifying the targets, and screening the area of targets based on layer scanning to calculate the number of targets by determining the highest positions of the respective targets. In addition, the dynamic numbers of targets are calculated using algorithm. Accordingly, the present invention is beneficial in automatically, effectively and precisely calculating the number of the targets in/out a specific area, achieving the flow control for targets and reducing artificial error upon calculation.
Mechanics and response of a surface rock block subjected to pressure fluctuations: A plucking model and its application
(2014-03-13)
Pan, Yii-Wen
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Li, Kuo-Wei
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Liao, Jyh-Jong
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土木工程學系
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Department of Civil Engineering
Plucking (removal of rock blocks) is often the dominant mechanism for producing a scour hole on riverbeds comprised of heavily jointed rocic masses being subjected to pressure fluctuations from a jet flow. This paper explores the mechanics and response of a surface block subjected to pressure fluctuations. First a particle-flow simulation was conducted to demonstrate how repeated pressure fluctuations are able to gradually remove rock bridges in discontinuities surrounding a rock block, if a pressure fluctuation's intensity is substantial. As a consequence, these weak planes may become fully persistent. The block's uplift speed then depends on the pressure differences on the opposite (horizontal) faces, and the frictional resistance of the lateral discontinuities. This paper proposes a theoretical framework to model the mechanics and response of a rock block subjected to a sinusoidal pressure fluctuation. This model can be applied to estimate the development of a scour hole, through plucking, during a specific flood event. An example demonstrates the applicability of the proposed approach in predicting the potential depth of the scour hole. (C) 2013 Elsevier B.V. All rights reserved.