Browsing by Issue Date, starting with "2014-03-17"

Now showing 1 - 20 of 27303

Opto-electrical properties of Sb-doped p-type ZnO nanowires
(2014-03-17)
Kao, Tzu-Hsuan
;
Chen, Jui-Yuan
;
Chiu, Chung-Hua
;
Huang, Chun-Wei
;
Wu, Wen-Wei
P-type ZnO nanowires (NWs) have attracted much attention in the past years due to the potential applications for optoelectronics and piezotronics. In this study, we have synthesized Sb-doped p-type ZnO NWs on Si (100) substrates by chemical vapor deposition with Aucatalyst. The Sb-doped ZnO NWs are single crystalline with high density, grown along [1-1-2] direction. The doping percentage of Sb is about 2.49%, which has been confirmed by X-ray photoelectron spectroscopy. The ZnO NW field effect transistor demonstrated its p-type characteristics. A high responsivity to ultraviolet photodetection was also observed. In addition, compared to intrinsic ZnO NWs, the conductivity of the Sb-doped ZnO NWs exhibited similar to 2 orders of magnitude higher. These properties make the p-type ZnO NWs a promising candidate for electronic and optoelectronic devices. (C) 2014 AIP Publishing LLC.
Investigation of abnormal negative threshold voltage shift under positive bias stress in input/output n-channel metal-oxide-semiconductor field-effect transistors with TiN/HfO2 structure using fast I-V measurement
(2014-03-17)
Ho, Szu-Han
;
Chang, Ting-Chang
;
Lu, Ying-Hsin
;
Chen, Ching-En
;
Tsai, Jyun-Yu
This letter investigates abnormal negative threshold voltage shifts under positive bias stress in input/output (I/O) TiN/HfO2 n-channel metal-oxide-semiconductor field-effect transistors using fast I-V measurement. This phenomenon is attributed to a reversible charge/discharge effect in pre-existing bulk traps. Moreover, in standard performance devices, threshold-voltage (V-t) shifts positively during fast I-V double sweep measurement. However, in I/O devices, V-t shifts negatively since electrons escape from bulk traps to metal gate rather than channel electrons injecting to bulk traps. Consequently, decreasing pre-existing bulk traps in I/O devices, which can be achieved by adopting HfxZr1-xO2 as gate oxide, can reduce the charge/discharge effect. (C) 2014 AIP Publishing LLC.
Ferminoic Physics in Dipolariton Condensates
(2014-03-17)
Su, Jung-Jung
;
Kim, Na Young
;
Yamamoto, Yoshihisa
;
MacDonald, Allan H.
;
電子物理學系
An exciton polariton is an extremely light bosonic quasiparticle that is composed of an exciton and a photon. We report on a theoretical study of exciton-polariton condensation in a system with tunnel-coupled quantum wells. Because their excitons can carry an electric dipole moment, these systems have been referred to as dipolariton condensates. We use a fermionic mean-field theory that can address quantum well and other internal exciton degrees of freedom to describe the new physics present in dipolariton condensates. We find that the role of underlying fermonic degrees of freedom is enhanced and predict that metallic condensates can occur at high carrier densities.
Flexible non-volatile memory
(2014-03-18)
Liu Po-Tsun
;
Fan Yang-Shun
A manufacturing method for manufacturing a flexible non-volatile memory is provided. The manufacturing method comprises the steps outlined below. A flexible substrate is provided. A planarization layer is formed on the flexible substrate. A metal bottom electrode layer is deposited on the planarization layer. A mask is formed to define a plurality of patterns. An AZTO layer having a plurality of electrically independent AZTO cells is deposited on the metal bottom electrode layer corresponding to the patterns. A top electrode layer is deposited on the AZTO layer corresponding to the AZTO cells to form a plurality of non-volatile memory cells.
An enhanced model for SDBR in a random reentrant flow shop environment
(2014-03-19)
Chang, Yung-Chia
;
Huang, Wen-Tso
;
工業工程與管理學系
;
Department of Industrial Engineering and Management
This study proposed an enhanced simplified drum-buffer-rope (SDBR) model to be applied in a reentrant flow shop (RFS) in which job processing times are generated from a discrete uniform distribution and machine breakdowns are subject to an exponential distribution. In this enhanced SDBR model, the due-date assignment method, order release rule and dispatching rule were improved. The due dates and release dates of orders were determined by considering the total planned load of the capacity-constrained resource (CCR) in a random RFS. The deviation rate of buffer status is used as a dispatching rule to eliminate the influence of machine breakdowns. Simulations based on a real case company are used to evaluate the effective of the proposed model. The experimental results showed that our approach yields better performance than the other methods in terms of six due-date-related indexes when the product mix is with a large proportion of multi-reentrant orders and when the utilisation of CCR increases from 60 to 90%.
ELECTROLUMINESCENT DEVICE INCLUDING MOISTURE BARRIER LAYER
(2014-03-20)
Leu Jihperng
;
Syu Shu-Hao
;
Tu Hung-En
;
Wang Chih
An electroluminescent device includes: a substrate; an electroluminescent layered structure disposed over the substrate and including first and second electrode layers and an electroluminescent material layer disposed between the first and second electrode layers; and a moisture barrier layer in contact with the electroluminescent layered structure for preventing moisture from diffusing into the electroluminescent layered structure. The moisture barrier layer includes at least two inorganic films of a silicon-nitrogen-containing compound and at least one polymer film interposed between the inorganic films.
STATIC RANDOM ACCESS MEMORY WITH RIPPLE BIT LINES/SEARCH LINES FOR IMROVING CURRENT LEAKAGE/VARIATION TOLERANCE AND DENSITY/PERFORMANCE
(2014-03-20)
CHUANG Ching-Te
;
YANG Hao-I
;
LU Chien-Yu
;
CHEN Chien-Hen
;
CHANG Chi-Shin
A static random access memory includes a pre-charger, a first cell column array/peripheral circuit, and a first ripple buffer. The pre-charger is connected to a first local bit line in order to pre-charge the first local bit line. The first cell column array/peripheral circuit is connected to the first local bit line and has a plurality of cells for temporarily storing data. The cells are connected to the first local bit line. The first ripple buffer is connected to the first local bit line and a second local bit line in order to send the data from the first local bit line to the second local bit line.
交大e-News第159期
(2014-03-20)
Secretariat
;
國立交通大學秘書室
Delta Modulator
(2014-03-20)
WU Chun-Yu
;
LYU Yuan-Fu
The invention comprises sample-and-hold circuit and digital-to-analog converter into a differentially operational unit. In analog-to-digital conversion unit, on the premise of fixed or non-fixed quantization error, analog-to-digital converter dynamically adjusts number of bits solved or size of quantized step according to the magnitude of differential voltage between sampled input signal and previously quantized input signal, thus this invention can reduce the non-necessary power consumption from redundant code and overload of input signal. Differentially operational unit and analog-to-digital unit share the same capacitor array which has binary-weighted arrangement to reduce circuit complexity and area.
PHASE-LOCKED LOOP WITH LOOP GAIN CALIBRATION, GAIN MEASUREMENT METHOD, GAIN CALIBRATION METHOD AND JITTER MEASUREMENT METHOD FOR PHASE-LOCKED LOOP
(2014-03-20)
Chen Wei-Zen
;
Chuang Shu-Chin
The invention provides a phase-locked loop with loop gain calibration and methods for measuring an oscillator gain, gain calibration and jitter measurement for a phase-locked loop. The method for measuring an oscillator gain of a phase-locked loop includes the steps of providing a varying code at an input end of the oscillator; outputting excess reference phase information by a reference phase integral path and outputting excess feedback phase information based on the varying code by a feedback phase integral path; and obtaining an estimated gain information of the oscillator based on the excess reference phase information and the excess feedback phase information.
Trajectory Entropy of Continuous Stochastic Processes at Equilibrium
(2014-03-20)
Haas, Kevin R.
;
Yang, Haw
;
Chu, Jhih-Wei
;
生物科技學系
;
生物資訊及系統生物研究所
We propose to quantify the trajectory entropy of a dynamic system as the information content in excess of a free-diffusion reference model. The space time trajectory is now the dynamic variable, and its path probability is given by the Onsager-Machlup action. For the time propagation of the overdamped Langevin equation, we solved the action path integral in the continuum limit and arrived at an exact analytical expression that emerged as a simple functional of the deterministic mean force and the stochastic diffusion. This work may have direct implications in chemical and phase equilibria, bond isomerization, and conformational changes in biological macromolecules as well transport problems in general.
BIO-NANOWIRE DEVICE AND METHOD OF FABRICATING THE SAME
(2014-03-20)
Chang Chia-Ching
;
Jian Wen-Bin
;
Chen Yu-Chang
;
Yuan Chiun-Jye
;
Gu Frank
A bio-nanowire device includes a substrate having a first surface, a first conductor, a second conductor, and a bio-nanowire. The first and second conductors are disposed on the first surface of the substrate, and are spaced apart from each other. The bio-nanowire has two ends respectively connected to the first and second conductors, and includes a nucleic acid molecule having two nucleotide segments, and a plurality of metal ions bonded between the two nucleotide segments of the nucleic acid molecule. The two nucleotide segments form a double helix structure via base pairs. When a voltage or a current is applied to the bio-nanowire, the oxidation state of the metal ions can be changed such that the non-linear electroconductive characteristic of the bio-nanowire can be controlled.
車牌偵測辨識方法及其系統
(2014-03-21)
謝君偉
;
陳信宇
本發明提供一種車牌偵測辨識方法及其系統，將輸入之影像轉換為一灰階影像，並計算其邊緣密度值，再依據邊緣密度值及一車牌規格條件，找出一車牌影像的位置。偵測車牌影像之文字區域，將其切割為複數字元影像後，並執行二值化處理以取得複數二值化字元影像。辨識此些二值化字元影像之複數字元，並對此些字元重新組合為一車牌字串，並輸出之。取下一個影像以得到下一個時間點的新車牌字串，並將車牌字串與新車牌字串之每一字元進行比對，以產生一比對結果，據以驗證比對結果之可信度。
自組式金屬奈米島陣列之製作方法
(2014-03-21)
張原銘
;
莊振益
;
戴鴻名
;
王浩偉
;
曾文綬
一種自組式金屬奈米島陣列之製作方法，係藉由在一半導體基材上進行一濺鍍製程，以形成一金屬奈米島陣列。利用此種製作方法，僅需單一濺鍍製程，即可完成金屬奈米島陣列的製作，相較於習知，不僅可有效減少繁瑣之製程步驟，更可進一步地節約能源、電力及製作成本。
依據資料動態供電之隨機存取記憶體
(2014-03-21)
莊景德
;
楊皓義
;
林宜緯
;
黃威
;
石維強
本發明提供一種隨機存取記憶體，具有複數個記憶單元。在一實施例中，排列於同一直行的記憶單元耦接同一對位元線，並對應於同一電源電路。每一記憶單元中設有兩個反相器，電源電路則設有兩電力開關。針對同一直行的各個記憶單元，兩電力開關可依據位元線的電壓，也就是寫入操作時位元線之欲寫入資料，分別為各記憶單元中兩反相器進行獨立的供電控制。
自動重置之暫態數位轉換器及電子產品
(2014-03-21)
柯明道
;
顏承正
;
陳東暘
;
蔡青霖
;
陳世範
一種自動重置之暫態數位轉換器，包括至少一暫態偵測電路。暫態偵測電路耦接於一第一電源線以及一第二電源線之間，包括至少一壓降單元(voltage drop unit)、一電流放大單元及一時間控制單元。當一ESD事件發生時，壓降單元被導通，以讓一ESD電流通過。電流放大單元係耦接於壓降單元及一第一節點之間，其被ESD電流導通來設定第一節點的位準。時間控制單元係耦接於第一節點及第二電源線之間，用來逐漸地導出ESD電流。其中，暫態偵測電路之每一者根據第一節點的位準來產生一數位碼。
長征極地　雪橇犬的震撼
(2014-03-23)
江欣薇
;
Department of Communication and Technology
;
傳播與科技學系
【極地長征】原是日本的真實事件，若當初被遺留在南極的是人類而不是狗兒們，是否也會任由他們自生自滅呢？
第二個家　我最愛的地方
(2014-03-23)
李若甄
;
Department of Communication and Technology
;
傳播與科技學系
每當情緒低落、忙亂中找無頭緒時，有一股衝勁總會帶著我一直撞、一直闖，勇往直前地闖出一條道路。
撞擊我的精采生活
(2014-03-23)
魏意蓁
;
Department of Communication and Technology
;
傳播與科技學系
「充滿無數次的撞擊的人生才會精采。」這一直是我的座右銘，也正是這句話，陪我度過重重難關。
畢業即就業　鐵飯碗最夯
(2014-03-23)
高紫娟
;
Department of Communication and Technology
;
傳播與科技學系
景氣低迷，職場薪資不見起色，大學畢業生起薪普遍不高逾三萬塊，因此不少畢業生選擇參加高普考。