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Item type:Item, 中正大社區 客家藝文饗宴(2014-07-06) ;Department of Communication and Technology傳播與科技學系社區總體營造,一個為了建立社區文化、凝聚社區共識而形成的政策性名詞,近幾年來盛行於台灣大街小巷的各個社區中。其中,桃園縣龍潭鄉中正社區也不例外。然而,最獨特的在於,這裡是桃園最大的客家社區。Item type:Item, Insulating state to quantum Hall-like state transition in a spin-orbit-coupled two-dimensional electron system(2014-07-07) ;Lo, Shun-Tsung ;Hsu, Chang-Shun ;Lin, Y. M. ;Lin, S-DLee, C. P.We study interference and interactions in an InAs/InAsSb two-dimensional electron system. In such a system, spin-orbit interactions are shown to be strong, which result in weak antilocalization (WAL) and thereby positive magnetoresistance around zero magnetic field. After suppressing WAL by the magnetic field, we demonstrate that classical positive magnetoresistance due to spin-orbit coupling plays a role. With further increasing the magnetic field, the system undergoes a direct insulator-quantum Hall transition. By analyzing the magnetotransport behavior in different field regions, we show that both electron-electron interactions and spin-related effects are essential in understanding the observed direct transition. (C) 2014 AIP Publishing LLC.Item type:Item, Recombination dynamics of a localized exciton bound at basal stacking faults within the m-(p)lane ZnO film(2014-07-07) ;Yang, S. ;Hsu, H. C. ;Liu, W-R. ;Lin, B. H.Kuo, C. C.We investigated the carrier dynamics near basal stacking faults (BSFs) in m-plane ZnO epitaxial film. The behaviors of the type-II quantum wells related to the BSFs are verified through time-resolved and time-integrated photoluminescence. The decay time of the emission of BSFs is observed to have a higher power law value and longer decay time than the emission of the donor-bound excitons. The spectral-dependent decay times reveal a phenomenon of carriers migrating among band tail states, which are related to the spatial distribution of the type-II quantum wells formed by the BSFs. A high density of excited carriers leads to a band bending effect, which in turn causes a blue-shift of the emission peak of BSFs with a broadened distribution of band tail states. (C) 2014 AIP Publishing LLC.Item type:Item, High performance 380-nm ultraviolet light-emitting-diodes with 3% efficiency droop by using free-standing GaN substrate manufacturing from GaAs substrate(2014-07-07) ;Shieh, Chen-Yu ;Tsai, Ming-Ta ;Li, Zhen-Yu ;Kuo, Hao-ChungChang, Jeng-YangWe investigated the influence of free-standing GaN (FS-GaN) substrates on the performance of ultraviolet light-emitting-diodes (UV-LEDs) grown on top by atmospheric pressure metal-organic chemical vapor deposition. High-resolution double-crystal x-ray diffraction (HRDCXD) analysis demonstrated high-order satellite peaks and clear fringes between them for UV-LEDs grown on the FS-GaN substrate, from which the interface roughness was estimated. In addition, the full width at half maximum of the HRDCXD rocking curve in the (0002) and the (1012) reflections were reduced to below 90 arc sec. The Raman results indicated that the GaN-based epilayer of strain free was grown. Additionally, the effect of the FS-GaN substrate on the crystal quality of the UV-LEDs was examined in detail by transmission electron microscopy (TEM). The TEM characterizations revealed no defects and V-pits were found in the scanned area. Based on the results mentioned above, the light output power of UV-LEDs on the FS-GaN substrate can be enhanced drastically by 80% and 90% at 20 and 100 mA, respectively. Furthermore, an ultralow efficiency degradation of about 3% can be obtained for the UV-LEDs on the FS-GaN substrate at a high injection current. The use of an FS-GaN substrate is suggested to be effective for improving the emission efficiency and droop of UV-LEDs grown thereon.Item type:Item, 交大e-News第166期(2014-07-07) ;Secretariat國立交通大學秘書室Item type:Item, Method of implementing timing engineering change order(2014-07-08) ;Chang Hua-Yu ;Jiang Hui-RuChang Yao-WenA method of implementing timing ECO in a circuit includes the steps of performing a static timing analysis on the circuit so as to determine at least one timing violating path of the circuit, decomposing the timing violating path into at least one violating path segment, determining a smooth curve from each timing violating path and determining a plurality of reference points along the smooth curve, computing a fixability parameter of each gate on the violating path segment, extracting at least one gate according to the fixability parameters, and selecting one spare cell and disposing the selected spare cell on the violating path segment.Item type:Item, Liquid dielectrophoretic device and method for controllably transporting a liquid using the same(2014-07-08) ;Fan Shih-KangLu I-PeiA liquid dielectrophoretic device comprises: a first container unit defining a first micro containing space including an electrode pair for generating a dielectrophoretic force; a second container unit defining a second micro containing space and including an electrode pair for generating a dielectrophoretic force; and a fluid channel unit defining a micro-channel between the first and second micro containing spaces and including an electrode pair having a middle region layer that has first and second enlarged sections and a middle section disposed between the first and second enlarged sections. The first and second enlarged sections are enlarged gradually from the middle section to the first and second micro containing spaces. A method for controllably transporting a liquid using the liquid dielectrophoretic device is also disclosed.Item type:Item, Static random access memory with ripple bit lines/search lines for improving current leakage/variation tolerance and density/performance(2014-07-08) ;Chuang Ching-Te ;Yang Hao-I ;Lu Chien-Yu ;Chen Chien-HenChang Chi-ShinA static random access memory includes a pre-charger, a first cell column array/peripheral circuit, and a first ripple buffer. The pre-charger is connected to a first local bit line in order to pre-charge the first local bit line. The first cell column array/peripheral circuit is connected to the first local bit line and has a plurality of cells for temporarily storing data. The cells are connected to the first local bit line. The first ripple buffer is connected to the first local bit line and a second local bit line in order to send the data from the first local bit line to the second local bit line.Item type:Item, Band Gap-Tunable Molybdenum Sulfide Selenide Monolayer Alloy(2014-07-09) ;Su, Sheng-Han ;Hsu, Yu-Te ;Chang, Yung-Huang ;Chiu, Ming-HuiHsu, Chang-LungItem type:Item, TESTING SYSTEM AND METHOD OF METAL SHEET(2014-07-10) ;HUNG Chinghua ;CHEN Yan-YoTSAI Yu-ChungThe present invention provides a testing system of metal sheet, and the system at least comprises a clipping apparatus, a hydraulic press apparatus and a measuring apparatus. The clipping apparatus comprises a first mold, a second mold and a hyperelastic plate. The hydraulic press apparatus connects to the clipping apparatus and transfer a hydraulic pressure via the second mold to the one of the testing sheet set to let it bulge along an orientation toward the first mold. The measuring apparatus connects with the clipping apparatus and the hydraulic press apparatus separately to measure a momentary pressure of the hydraulic pressure and the bulge height of the one of the testing sheet set. A testing method using the abovementioned system is also disclosed in the present invention.Item type:Item, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE(2014-07-10) ;LIU Po-Tsun ;WANG Wei-YaTENG Li-FengThe present invention provides a method of manufacturing a semiconductor device. The method at least comprises the following steps. First, the semiconductor device, which comprises a gate, a gate dielectric layer, an active layer, a source and a drain, is manufactured. However, the semiconductor device has a plurality of defects, and the active layer is a metal oxide thin film. After annealing the semiconductor device, it will be transferred into a chamber. A final step of injecting a supercritical fluid carried with a co-solvent into the chamber is then performed to modify the abovementioned defects.Item type:Item, DRUG SCREENING METHOD(2014-07-10) ;Yang Jinn-MoonHsu Kai-ChengA drug screening method is disclosed. The drug screening method includes steps of screening a compound library to obtain a first group of compounds capable of binding to a wild type target; screening the first group of compounds to obtain a second group of compounds capable of binding to a mutant site of a mutant target; analyzing characteristics of binding sites of the wild type target and the mutant type target to obtain physico-chemical properties of the binding sites; identifying a candidate from the second group of compounds according to the physico-chemical properties of the binding site; and performing a bio-assay on inhibitory activity of the candidate.Item type:Item, Surface Passivation of TiO2 Nanowires Using a Facile Precursor-Treatment Approach for Photoelectrochemical Water Oxidation(2014-07-10) ;Pu, Ying-Chih ;Ling, Yichuan ;Chang, Kao-Der ;Liu, Chia-MingZhang, Jin Z.We developed a facile precursor-treatment approach for effective surface passivation of rutile TiO2 nanowire photoanode to improve its performance in photoelectrochernical (PEC) water oxidation. The approach was demonstrated by treating rutile TiO2 nanowires with titanium precursor solutions (TiCl4, Ti(OBu)(4), or Ti(OiP)(4)) followed by a postannealing process, which resulted in the additional deposition of anatase TiO2 layer on the nanowire surface. Compared to pristine TiO2, all the precursor-treated TiO2 nanowire electrodes exhibited a significantly enhanced photocurrent density under white light illumination. Among the three precursor-treated samples, Ti(OBu)(4)-treated TiO2 nanowires achieved the largest enhancement of photocurrent generation, which is approximately a 3-fold increase over pristine TiO2. Monochromatic incident photon-to-electron conversion efficiency (IPCE) measurements showed that the improvement of PEC performance was dominated by the enhanced photoactivity of TiO2 in the UV region. The photovoltage and electrochemical impedance spectroscopy (EIS) measurements showed that the enhanced photoactivity can be attributed to the improved charge transfer as a result of effective surface state passivation. This work demonstrates a facile, low-cost, and efficient method for preparing highly photoactive TiO2 nanowire electrodes for PEC water oxidation. This approach could also potentially be used for other photoconversion applications, such as TiO2 based dye-sensitized solar cells, as well as photocatalytic systems.Item type:Item, Surface Passivation of TiO2 Nanowires Using a Facile Precursor-Treatment Approach for Photoelectrochemical Water Oxidation(2014-07-10) ;Pu, Ying-Chih ;Ling, Yichuan ;Chang, Kao-Der ;Liu, Chia-MingZhang, Jin Z.We developed a facile precursor-treatment approach for effective surface passivation of rutile TiO2 nanowire photoanode to improve its performance in photoelectrochernical (PEC) water oxidation. The approach was demonstrated by treating rutile TiO2 nanowires with titanium precursor solutions (TiCl4, Ti(OBu)(4), or Ti(OiP)(4)) followed by a postannealing process, which resulted in the additional deposition of anatase TiO2 layer on the nanowire surface. Compared to pristine TiO2, all the precursor-treated TiO2 nanowire electrodes exhibited a significantly enhanced photocurrent density under white light illumination. Among the three precursor-treated samples, Ti(OBu)(4)-treated TiO2 nanowires achieved the largest enhancement of photocurrent generation, which is approximately a 3-fold increase over pristine TiO2. Monochromatic incident photon-to-electron conversion efficiency (IPCE) measurements showed that the improvement of PEC performance was dominated by the enhanced photoactivity of TiO2 in the UV region. The photovoltage and electrochemical impedance spectroscopy (EIS) measurements showed that the enhanced photoactivity can be attributed to the improved charge transfer as a result of effective surface state passivation. This work demonstrates a facile, low-cost, and efficient method for preparing highly photoactive TiO2 nanowire electrodes for PEC water oxidation. This approach could also potentially be used for other photoconversion applications, such as TiO2 based dye-sensitized solar cells, as well as photocatalytic systems.Item type:Item, Clinical relevance of KRAS mutations in codon 13: Where are we? (vol 343, pg 1, 2013)(2014-07-10) ;Er, Tze-Kiong ;Chen, Chih-Chieh ;Bujanda, Luis ;Herreros-Villanueva, Marta生物資訊及系統生物研究所Item type:Item, ONE-DIMENSIONAL TITANIUM NANOSTRUCTURE AND METHOD FOR FABRICATING THE SAME(2014-07-10) ;CHEN Tze-Lung ;CHIU Hsin-TienLEE Chi-YoungA one-dimensional titanium nanostructure and a method for fabricating the same are provided. A titanium metal reacts with titanium tetrachloride to form the one-dimensional titanium nanostructure on a heat-resistant substrate in a CVD method and under a reaction condition of a reaction temperature of 300-900° C., a deposition temperature of 200-850° C., a flow rate of the carrier gas of 0.1-50 sccm and a reaction time of 5-60 hours. The titanium nanostructure includes titanium nanowires, titanium nanobelts, flower-shaped titanium nanowires, titanium nanorods, titanium nanotubes, and titanium-titanium dioxide core-shell structures. The titanium nanostructure can be densely and uniformly grown on the heat-resistant substrate. The present invention neither uses a template nor uses the complicated photolithographic process, solution preparation process, and mixing-coating process. Therefore, the process scale-up, cost down, and the simplified production process are achieved.Item type:Item, 液體介電泳裝置(2014-07-11) ;范士岡盧怡蓓本發明提供一種液體介電泳裝置,包含:一第一承載單元,界定出一第一承載微空間,並具有一電極組合用以在該第一承載微空間內產生一第一電場;一第二承載單元,界定出一第二承載微空間,並具有一電極組合用以在該第二承載微空間內產生一第二電場;以及一流體通道單元,具有一中間電極區。該中間電極區具有一第一擴大端部、一第二擴大端部、及一連接該第一擴大端部與該第二擴大端部的中間段。本發明也提供一種利用一介電泳裝置輸送液體的方法。Item type:Item, N位元數位至類比轉換裝置(2014-07-11) ;曾偉信吳介琮一種N位元數位至類比轉換裝置,接收一數位信號和一時鐘信號,時鐘信號在一第一狀態及一第二狀態之間切換,且N位元數位至類比轉換裝置包含:一解碼器,將該數位信號轉換成一具有多位元的溫度計碼;一亂數產生器,輸出一呈亂數的重設信號,重設信號具有多個交互隨機排列且排列方式隨不同時間變化的位元,且其中邏輯高準位的位元之數目等於處於邏輯低準位的位元之數目;及一轉換模組,當時鐘信號處於第一狀態時,轉換模組將該溫度計碼轉換成一相關於數位信號的類比電壓;當時鐘信號處於第二狀態時,轉換模組根據重設信號將類比電壓歸零。Item type:Item, 減少硫化氫之生物性複合物及方法(2014-07-11) ;曾慶平陳煜沛本發明係有關於一種減少硫化氫之生物性複合物及方法,其中該減少硫化氫之生物性複合物包括:一擔體;以及一棲熱菌屬菌株(Thermussp.),固著於該擔體上。因此,利用該棲熱菌屬菌株或固著有該棲熱菌屬菌株之擔體與含硫化氫之樣本接觸,便可以減少其中之硫化氫含量。Item type:Item, 資料傳送的混合式編解碼裝置與方法(2014-07-11) ;易志偉 ;劉炳傳呂孝恆在一種資料廣播的混合式編解碼裝置中,使用一個編碼器將來源檔案切割成N個子區段,並在第一有限場編碼產生N筆主要編碼資料,且將此N個子區段在第二有限場編碼產生k筆額外編碼資料後,輸出一組編碼係數及N+k筆編碼資料至解碼器。解碼器接收到此組編碼係數及此N+k筆編碼資料後,將其中N筆主要編碼資料在第一有限場進行解碼,若無法解碼出N個子區段時,再利用剩餘k筆額外編碼資料在第二有限場輔助資料的解碼運算。依此,解碼出一已還原的來源檔案。