Browsing by Issue Date, starting with "2014-07-08"
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Item type:Item, Method of implementing timing engineering change order(2014-07-08) ;Chang Hua-Yu ;Jiang Hui-RuChang Yao-WenA method of implementing timing ECO in a circuit includes the steps of performing a static timing analysis on the circuit so as to determine at least one timing violating path of the circuit, decomposing the timing violating path into at least one violating path segment, determining a smooth curve from each timing violating path and determining a plurality of reference points along the smooth curve, computing a fixability parameter of each gate on the violating path segment, extracting at least one gate according to the fixability parameters, and selecting one spare cell and disposing the selected spare cell on the violating path segment.Item type:Item, Liquid dielectrophoretic device and method for controllably transporting a liquid using the same(2014-07-08) ;Fan Shih-KangLu I-PeiA liquid dielectrophoretic device comprises: a first container unit defining a first micro containing space including an electrode pair for generating a dielectrophoretic force; a second container unit defining a second micro containing space and including an electrode pair for generating a dielectrophoretic force; and a fluid channel unit defining a micro-channel between the first and second micro containing spaces and including an electrode pair having a middle region layer that has first and second enlarged sections and a middle section disposed between the first and second enlarged sections. The first and second enlarged sections are enlarged gradually from the middle section to the first and second micro containing spaces. A method for controllably transporting a liquid using the liquid dielectrophoretic device is also disclosed.Item type:Item, Static random access memory with ripple bit lines/search lines for improving current leakage/variation tolerance and density/performance(2014-07-08) ;Chuang Ching-Te ;Yang Hao-I ;Lu Chien-Yu ;Chen Chien-HenChang Chi-ShinA static random access memory includes a pre-charger, a first cell column array/peripheral circuit, and a first ripple buffer. The pre-charger is connected to a first local bit line in order to pre-charge the first local bit line. The first cell column array/peripheral circuit is connected to the first local bit line and has a plurality of cells for temporarily storing data. The cells are connected to the first local bit line. The first ripple buffer is connected to the first local bit line and a second local bit line in order to send the data from the first local bit line to the second local bit line.Item type:Item, Band Gap-Tunable Molybdenum Sulfide Selenide Monolayer Alloy(2014-07-09) ;Su, Sheng-Han ;Hsu, Yu-Te ;Chang, Yung-Huang ;Chiu, Ming-HuiHsu, Chang-LungItem type:Item, TESTING SYSTEM AND METHOD OF METAL SHEET(2014-07-10) ;HUNG Chinghua ;CHEN Yan-YoTSAI Yu-ChungThe present invention provides a testing system of metal sheet, and the system at least comprises a clipping apparatus, a hydraulic press apparatus and a measuring apparatus. The clipping apparatus comprises a first mold, a second mold and a hyperelastic plate. The hydraulic press apparatus connects to the clipping apparatus and transfer a hydraulic pressure via the second mold to the one of the testing sheet set to let it bulge along an orientation toward the first mold. The measuring apparatus connects with the clipping apparatus and the hydraulic press apparatus separately to measure a momentary pressure of the hydraulic pressure and the bulge height of the one of the testing sheet set. A testing method using the abovementioned system is also disclosed in the present invention.Item type:Item, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE(2014-07-10) ;LIU Po-Tsun ;WANG Wei-YaTENG Li-FengThe present invention provides a method of manufacturing a semiconductor device. The method at least comprises the following steps. First, the semiconductor device, which comprises a gate, a gate dielectric layer, an active layer, a source and a drain, is manufactured. However, the semiconductor device has a plurality of defects, and the active layer is a metal oxide thin film. After annealing the semiconductor device, it will be transferred into a chamber. A final step of injecting a supercritical fluid carried with a co-solvent into the chamber is then performed to modify the abovementioned defects.Item type:Item, DRUG SCREENING METHOD(2014-07-10) ;Yang Jinn-MoonHsu Kai-ChengA drug screening method is disclosed. The drug screening method includes steps of screening a compound library to obtain a first group of compounds capable of binding to a wild type target; screening the first group of compounds to obtain a second group of compounds capable of binding to a mutant site of a mutant target; analyzing characteristics of binding sites of the wild type target and the mutant type target to obtain physico-chemical properties of the binding sites; identifying a candidate from the second group of compounds according to the physico-chemical properties of the binding site; and performing a bio-assay on inhibitory activity of the candidate.Item type:Item, Surface Passivation of TiO2 Nanowires Using a Facile Precursor-Treatment Approach for Photoelectrochemical Water Oxidation(2014-07-10) ;Pu, Ying-Chih ;Ling, Yichuan ;Chang, Kao-Der ;Liu, Chia-MingZhang, Jin Z.We developed a facile precursor-treatment approach for effective surface passivation of rutile TiO2 nanowire photoanode to improve its performance in photoelectrochernical (PEC) water oxidation. The approach was demonstrated by treating rutile TiO2 nanowires with titanium precursor solutions (TiCl4, Ti(OBu)(4), or Ti(OiP)(4)) followed by a postannealing process, which resulted in the additional deposition of anatase TiO2 layer on the nanowire surface. Compared to pristine TiO2, all the precursor-treated TiO2 nanowire electrodes exhibited a significantly enhanced photocurrent density under white light illumination. Among the three precursor-treated samples, Ti(OBu)(4)-treated TiO2 nanowires achieved the largest enhancement of photocurrent generation, which is approximately a 3-fold increase over pristine TiO2. Monochromatic incident photon-to-electron conversion efficiency (IPCE) measurements showed that the improvement of PEC performance was dominated by the enhanced photoactivity of TiO2 in the UV region. The photovoltage and electrochemical impedance spectroscopy (EIS) measurements showed that the enhanced photoactivity can be attributed to the improved charge transfer as a result of effective surface state passivation. This work demonstrates a facile, low-cost, and efficient method for preparing highly photoactive TiO2 nanowire electrodes for PEC water oxidation. This approach could also potentially be used for other photoconversion applications, such as TiO2 based dye-sensitized solar cells, as well as photocatalytic systems.Item type:Item, Surface Passivation of TiO2 Nanowires Using a Facile Precursor-Treatment Approach for Photoelectrochemical Water Oxidation(2014-07-10) ;Pu, Ying-Chih ;Ling, Yichuan ;Chang, Kao-Der ;Liu, Chia-MingZhang, Jin Z.We developed a facile precursor-treatment approach for effective surface passivation of rutile TiO2 nanowire photoanode to improve its performance in photoelectrochernical (PEC) water oxidation. The approach was demonstrated by treating rutile TiO2 nanowires with titanium precursor solutions (TiCl4, Ti(OBu)(4), or Ti(OiP)(4)) followed by a postannealing process, which resulted in the additional deposition of anatase TiO2 layer on the nanowire surface. Compared to pristine TiO2, all the precursor-treated TiO2 nanowire electrodes exhibited a significantly enhanced photocurrent density under white light illumination. Among the three precursor-treated samples, Ti(OBu)(4)-treated TiO2 nanowires achieved the largest enhancement of photocurrent generation, which is approximately a 3-fold increase over pristine TiO2. Monochromatic incident photon-to-electron conversion efficiency (IPCE) measurements showed that the improvement of PEC performance was dominated by the enhanced photoactivity of TiO2 in the UV region. The photovoltage and electrochemical impedance spectroscopy (EIS) measurements showed that the enhanced photoactivity can be attributed to the improved charge transfer as a result of effective surface state passivation. This work demonstrates a facile, low-cost, and efficient method for preparing highly photoactive TiO2 nanowire electrodes for PEC water oxidation. This approach could also potentially be used for other photoconversion applications, such as TiO2 based dye-sensitized solar cells, as well as photocatalytic systems.Item type:Item, Clinical relevance of KRAS mutations in codon 13: Where are we? (vol 343, pg 1, 2013)(2014-07-10) ;Er, Tze-Kiong ;Chen, Chih-Chieh ;Bujanda, Luis ;Herreros-Villanueva, Marta生物資訊及系統生物研究所Item type:Item, ONE-DIMENSIONAL TITANIUM NANOSTRUCTURE AND METHOD FOR FABRICATING THE SAME(2014-07-10) ;CHEN Tze-Lung ;CHIU Hsin-TienLEE Chi-YoungA one-dimensional titanium nanostructure and a method for fabricating the same are provided. A titanium metal reacts with titanium tetrachloride to form the one-dimensional titanium nanostructure on a heat-resistant substrate in a CVD method and under a reaction condition of a reaction temperature of 300-900° C., a deposition temperature of 200-850° C., a flow rate of the carrier gas of 0.1-50 sccm and a reaction time of 5-60 hours. The titanium nanostructure includes titanium nanowires, titanium nanobelts, flower-shaped titanium nanowires, titanium nanorods, titanium nanotubes, and titanium-titanium dioxide core-shell structures. The titanium nanostructure can be densely and uniformly grown on the heat-resistant substrate. The present invention neither uses a template nor uses the complicated photolithographic process, solution preparation process, and mixing-coating process. Therefore, the process scale-up, cost down, and the simplified production process are achieved.Item type:Item, 液體介電泳裝置(2014-07-11) ;范士岡盧怡蓓本發明提供一種液體介電泳裝置,包含:一第一承載單元,界定出一第一承載微空間,並具有一電極組合用以在該第一承載微空間內產生一第一電場;一第二承載單元,界定出一第二承載微空間,並具有一電極組合用以在該第二承載微空間內產生一第二電場;以及一流體通道單元,具有一中間電極區。該中間電極區具有一第一擴大端部、一第二擴大端部、及一連接該第一擴大端部與該第二擴大端部的中間段。本發明也提供一種利用一介電泳裝置輸送液體的方法。Item type:Item, N位元數位至類比轉換裝置(2014-07-11) ;曾偉信吳介琮一種N位元數位至類比轉換裝置,接收一數位信號和一時鐘信號,時鐘信號在一第一狀態及一第二狀態之間切換,且N位元數位至類比轉換裝置包含:一解碼器,將該數位信號轉換成一具有多位元的溫度計碼;一亂數產生器,輸出一呈亂數的重設信號,重設信號具有多個交互隨機排列且排列方式隨不同時間變化的位元,且其中邏輯高準位的位元之數目等於處於邏輯低準位的位元之數目;及一轉換模組,當時鐘信號處於第一狀態時,轉換模組將該溫度計碼轉換成一相關於數位信號的類比電壓;當時鐘信號處於第二狀態時,轉換模組根據重設信號將類比電壓歸零。Item type:Item, 減少硫化氫之生物性複合物及方法(2014-07-11) ;曾慶平陳煜沛本發明係有關於一種減少硫化氫之生物性複合物及方法,其中該減少硫化氫之生物性複合物包括:一擔體;以及一棲熱菌屬菌株(Thermussp.),固著於該擔體上。因此,利用該棲熱菌屬菌株或固著有該棲熱菌屬菌株之擔體與含硫化氫之樣本接觸,便可以減少其中之硫化氫含量。Item type:Item, 資料傳送的混合式編解碼裝置與方法(2014-07-11) ;易志偉 ;劉炳傳呂孝恆在一種資料廣播的混合式編解碼裝置中,使用一個編碼器將來源檔案切割成N個子區段,並在第一有限場編碼產生N筆主要編碼資料,且將此N個子區段在第二有限場編碼產生k筆額外編碼資料後,輸出一組編碼係數及N+k筆編碼資料至解碼器。解碼器接收到此組編碼係數及此N+k筆編碼資料後,將其中N筆主要編碼資料在第一有限場進行解碼,若無法解碼出N個子區段時,再利用剩餘k筆額外編碼資料在第二有限場輔助資料的解碼運算。依此,解碼出一已還原的來源檔案。Item type:Item, 半導體裝置及其操作方法與應用電路(2014-07-11) ;白田理一郎渡邊浩志一種半導體裝置及其操作方法與應用電路。藉由調整施加於雙重井區上的偏壓,來降低控制閘極擴散層、源極擴散層與汲極擴散層之間的漏電流,進而提高應用半導體裝置之無電池電子計時器的準確性並降低生產成本。Item type:Item, 使用可調式部分最小平方法之人臉辨識系統及其方法(2014-07-11) ;張家維蕭子健一種使用可調式部分最小平方法之人臉辨識系統及其方法,其係操作於一訓練模式或一判別模式中。該人臉辨識系統包括:一訊號擷取單元、一特徵提取模組、一比較模組、一儲存單元、及一顯示單元。其中,於訓練模式中,訊號擷取單元係接收人臉影像資料組及其所對應之分類標籤,特徵提取模組係根據人臉影像資料組及分類標籤,經由可調式部分最小平方法計算特徵值組。於判別模式中,訊號擷取單元係接收另一人臉影像資料,比較模組係根據特徵提取模組所提供之特徵值組,經由可調式部分最小平方法計算另一人臉影像資料所對應之另一分類標籤。Item type:Item, 數位讀出模組、數位感測裝置(2014-07-11) ;賴義澤李鎮宜一種數位感測裝置,包含一感測單元,用以感測一環境參數並產生二追隨該環境參數變化的第一、第二元件參數;及一數位讀出模組,包括一讀取單元,電連接該感測單元以根據該第一、第二元件參數產生一具有一脈波寬度的脈波訊號,且該脈波寬度相關於該兩元件參數值的一差值;及一轉換單元,用以產生一具有可變頻率的時脈訊號,並電連接該讀取單元以接收該脈波訊號,且利用該時脈訊號對該脈波訊號的該脈波寬度計數,以產生一指示該環境參數值的數位感測碼。Item type:Item, 具有漸變含量之電洞穿隧層之發光元件(2014-07-11) ;王朝勳郭浩中一種具有漸變含量之電洞穿隧層之發光元件,包含:基板;n-型半導體層,設置在基板上,n-型半導體層具有第一部份及第二部份;具有漸變含量之電洞穿隧層,設置在n-型半導體層之第一部份上;電子阻擋層,設置在具有漸變含量之電洞穿隧層上;p-型半導體層,設置在電子阻擋層上;第一電極,設置在p-型半導體層上;以及第二電極,設置在n-型半導體層之第二部份上且與n-型導體層之第一部份上之結構電性分離,且第二電極與第一電極之電性相反,藉由具有漸變含量之電洞穿隧層做為多重量子井層,在寬能隙發光元件中,提高電洞傳遞效率,進一步的提高發光效率。Item type:Item, 一種電子顯微鏡樣品盒(2014-07-11) ;陳智杜經寧本發明係有關於一種電子顯微鏡樣品盒,包括:一第一基板、一第二基板、一或以上之光電元件、及一金屬黏著層。該第一基板具有一第一表面、一第二表面、一第一凹槽、及一或以上之第一導孔,該第一導孔係貫穿第一基板。該第二基板具有一第三表面、一第四表面、及一第二凹槽。該光電元件係設置於第一基板及第二基板間。另外,該金屬黏著層,係設置於該第一基板與該第二基板間以形成一空間,使樣品容置於其中。此外,本發明更包括一或以上之栓塞,係可密封第一導孔,使本發明之樣品盒密封並以電子顯微鏡即時觀測。