Browsing by Issue Date, starting with "2014-12-04"

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Antibody-Conjugated Double-Emulsion Nanocapsule and Preparation Methods Thereof
(2014-12-04)
Chiang Chih-Sheng
;
Hu Shang-Hsiu
;
Chen San-Yuan
An antibody-conjugated double-emulsion nanocapsule is provided. A linking group is introduced on the surface of a double-emulsion nanocapsule, which is composed of an oily shell enclosing an aqueous core, to link the double-emulsion nanocapsule with an antibody.
Dual-Vortical-Flow Hybrid Rocket Engine
(2014-12-04)
Chen Yen-Sen
;
Wu Men-Zen
;
Wu Jong-Shinn
;
Lai Alfred
;
Lin Jhe-Wei
The present invention discloses a dual-vortical-flow hybrid rocket engine, including a main body and a nozzle communicating with an end of the main body. The main body includes a plurality of disk-like combustion chambers arranged longitudinally, and a central combustion chamber formed along the axial portion and communicating the disk-like combustion chambers. Each of the disk-like combustion chambers is provided with a plurality of oxidizer injection nozzles at its inner circumference surface. Inside the disk-like combustion chambers, the oxidizer is injected in nearly the tangent directions of the circumference, and the injection directions are opposite for the neighboring disk-like combustion chambers, which creates vortical flows with opposite rotating directions so as to increase the total residence time of the combustion reactions of the oxidizer and the solid-state fuel in the disk-like combustion chambers of the present invention.
METHOD FOR FABRICATING A LATERAL-EPITAXIAL-OVERGROWTH THIN-FILM LIGHT-EMITTING DIODE WITH NANOSCALE-ROUGHENED STRUCTURE
(2014-12-04)
LEE Chia-Yu
;
WANG Chao-Hsun
;
CHIU Ching-Hsueh
;
KUO Hao-Chung
A method for fabricating a lateral-epitaxial-overgrowth thin-film LED with a nanoscale-roughened structure is provided. The lateral-epitaxial-overgrowth thin-film LED with a nanoscale-roughened structure has a substrate, a metal bonding layer formed on the substrate, a first electrode formed on the metal bonding layer, a semiconductor structure formed on the first electrode with a lateral-epitaxial-growth technology, and a second electrode formed on the semiconductor structure. A nanoscale-roughened structure is formed on the semiconductor structure except the region covered by the second electrode. Lateral epitaxial growth is used to effectively inhibit the stacking faults and reduce the thread dislocation density in the semiconductor structure to improve the crystallization quality of the light-emitting layer and reduce leakage current. Meanwhile, the surface roughened structure on the semiconductor structure can promote the external quantum efficiency.
METHOD FOR FABRICATING THIN-FILM TRANSISTOR
(2014-12-04)
LIN HORNG-CHIH
;
LYU RONG-JHE
A method for fabricating a thin-film transistor is disclosed. Firstly, a patterned dielectric mask structure with a bottom thereof having a gate dielectric layer is formed on a gate-stacked structure so that the gate dielectric layer covers a gate of the gate-stacked structure. Top surface of the patterned dielectric mask structure has at least two openings. A semiconductor layer is formed on the gate-stacked structure via the openings by a sputtering method. The semiconductor layer comprises a channel above the gate, a source and a drain below the openings. The channel has a thickness which sequentially decreases from edge to center.
Co-Sensitization of Zinc and Free-Base Porphyrins with an Organic Dye for Efficient Dye-Sensitized Solar Cells
(2014-12-04)
Wang, Chin-Li
;
Shiu, Jia-Wei
;
Hsiao, Yen-Ni
;
Chao, Pei-Shang
;
Diau, Eric Wei-Guang
Co-sensitization of an efficient zinc porphyrin sensitizer (LD14) with its free-base analogue (H(2)LD14) and an organic dye (AN-3) improves the efficiency of the dye-sensitized solar cells. The superior performance of the co-sensitized system is attributed to complementary absorptions of the three dyes, resulting in panchromatic incident photon-to-current conversion efficiency responses at the expense of only slightly lowered open-circuit voltage.
交大e-News第176期
(2014-12-05)
Secretariat
;
國立交通大學秘書室
Control of metamorphic buffer structure and device performance of InxGa1-xAs epitaxial layers fabricated by metal organic chemical vapor deposition
(2014-12-05)
Nguyen, H. Q.
;
Yu, H. W.
;
Luc, Q. H.
;
Tang, Y. Z.
;
Phan, V. T. H.
Using a step-graded (SG) buffer structure via metal-organic chemical vapor deposition, we demonstrate a high suitability of In0.5Ga0.5As epitaxial layers on a GaAs substrate for electronic device application. Taking advantage of the technique\'s precise control, we were able to increase the number of SG layers to achieve a fairly low dislocation density (similar to 10(6)cm(-2)), while keeping each individual SG layer slightly exceeding the critical thickness (similar to 80 nm) for strain relaxation. This met the demanded but contradictory requirements, and even offered excellent scalability by lowering the whole buffer structure down to 2.3 mu m. This scalability overwhelmingly excels the forefront studies. The effects of the SG misfit strain on the crystal quality and surface morphology of In0.5Ga0.5As epitaxial layers were carefully investigated, and were correlated to threading dislocation (TD) blocking mechanisms. From microstructural analyses, TDs can be blocked effectively through self-annihilation reactions, or hindered randomly by misfit dislocation mechanisms. Growth conditions for avoiding phase separation were also explored and identified. The buffer-improved, high-quality In0.5Ga0.5As epitaxial layers enabled a high-performance, metal-oxide-semiconductor capacitor on a GaAs substrate. The devices displayed remarkable capacitance-voltage responses with small frequency dispersion. A promising interface trap density of 3 x 10(12) eV(-1) cm(-2) in a conductance test was also obtained. These electrical performances are competitive to those using lattice-coherent but pricey InGaAs/InP systems.
Scattering resonance enhanced dye absorption of dye sensitized solar cells at optimized hollow structure size
(2014-12-05)
Tsai, Min-Chiao
;
Lee, Jeng-Yi
;
Chang, Ya-Chen
;
Yang, Min-Han
;
Chen, Tin-Tin
This study elucidates the size effect on dye-sensitized solar cells (DSSCs) by synthesizing highly uniform hierarchical hollow sphere TiO2 samples, with the diameters from 220 nm to 800 nm. Experimental results indicate that the optimum conversion efficiency using N719 dye can be achieved around 5.5%, as the diameter of hierarchical hollow spheres is 450-550 nm. According to the incident photon-to-current conversion efficiency (IPCE) spectra, large-sized hierarchical hollow spheres significantly enhance the light harvesting by scattering; whereas small-sized hallow spheres (<360 nm) improve negligibly. Additionally, mesoporous and solid spheres with an identical diameter, 440 nm in this study, are also studied as a comparison. Our results demonstrate that hollow spheres perform the same conversion efficiency as that of mesoporous spheres owing to the equivalent adsorption of dye molecules in both hierarchical structures - regardless of the surface area of the interior of mesoporous structure, which shows that hollow spheres have higher conversion efficiency per unit volume than that of mesoporous spheres. (C) 2014 Elsevier B.V. All rights reserved.
Thermoelectric properties of nanostructured bismuth-telluride thin films grown using pulsed laser deposition
(2014-12-05)
Phuoc Huu Le
;
Liao, Chien-Neng
;
Luo, Chih Wei
;
Leu, Jihperng
;
交大名義發表
Nanostructured n-type bismuth telluride (Bi2Te3) thin films were grown on SiO2/Si (100) substrates at argon ambient pressure (P-Ar) of 80 Pa by pulsed laser deposition (PLD). The effects of film morphologies, structures, and compositions on the thermoelectric properties were investigated. At a substrate temperature (T-s) of 220-340 degrees C, stoichiometric films with highly (001)-oriented and layered structures showed the best properties, with a carrier mobility mu of 83.9-122.3 cm(2)/Vs, an absolute Seebeck coefficient vertical bar alpha vertical bar of 172.8-189.7 mu V/K, and a remarkably high power factor (PF) of 18.2-24.3 mu W cm(-1) K-2. By contrast, the Te-rich films deposited at T-s <= 120 degrees C with (015)-preferred orientations and columnar-small grain structures or the Te-deficient film deposited at 380 degrees C with Bi4Te5 polyhedron structure possessed poor properties, with mu < 10.0 cm(2)/Vs, vertical bar alpha vertical bar < 54 mu V/K, and PFs <= 0.44 mu W cm(-1) K-2. The morphology of highly (001) oriented-layered structures and the stoichiometry predominantly contribute to the substantial enhancement of mu and alpha vertical bar, respectively, resulting in remarkable enhancement in PF. (C) 2014 Elsevier B.V. All rights reserved.
象牙塔外　明星高中存廢戰
(2014-12-07)
陳怡均
;
Department of Communication and Technology
;
傳播與科技學系
針對十二年國教實行的現況、明星高中備受爭議的現勢以及大眾紛歧的觀點作探討，歸納出可行的未來發展。
關余膚色　我想說的事
(2014-12-07)
余念竹
;
Department of Communication and Technology
;
傳播與科技學系
活出自我「不留白」，小麥膚色的宣言。
性教育
(2014-12-07)
黃苡齊
;
Department of Communication and Technology
;
傳播與科技學系
那些年　爸爸與芭樂的回憶　
(2014-12-07)
陳亞柔
;
Department of Communication and Technology
;
傳播與科技學系
在阿爸生日那天，摳摳憶起爸爸與芭樂的故事。
恐怖情人　當深愛變成殺害
(2014-12-07)
黃馨儀
;
Department of Communication and Technology
;
傳播與科技學系
近年來，情殺案件頻傳的現象，來自於社交媒介轉換、媒體的連鎖效應及教育體制的根源，情感問題是大眾關注且必須學習的議題。
文字繪畫攝影　布列松之眼
(2014-12-07)
沈祖廷
;
Department of Communication and Technology
;
傳播與科技學系
紀載布列松一生精華文字，扼要道出布列松於新聞攝影的價值觀與性格。
變化自如　幕後的聲音演員
(2014-12-07)
張婷芳
;
Department of Communication and Technology
;
傳播與科技學系
資深配音員蔣篤慧，娓娓道來身為臺灣配音員的酸甜苦辣。
心情
(2014-12-07)
賴奕安
;
Department of Communication and Technology
;
傳播與科技學系
場場難忘　啦啦隊賽事
(2014-12-07)
賴奕安
;
Department of Communication and Technology
;
傳播與科技學系
我的啦啦隊人生是由無數次參與的賽事累積而成，場場都獨特、場場都難忘。
橫著走出一條路　現實搖滾
(2014-12-07)
李怡安
;
Department of Communication and Technology
;
傳播與科技學系
日本搖滾樂團RADWIMPS，以獨具的世界觀和特殊省思角度，溫柔但尖銳的唱出此生的生命態度。
多元創意　單一主題同人展
(2014-12-07)
簡品心
;
Department of Communication and Technology
;
傳播與科技學系
臺灣的同人誌販售活動日益興盛，更出現限定特定主題的「單類型同人誌販售會」，顯示同人活動的多樣面貌。