Browsing by Issue Date, starting with "2014-12-11"

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好刊大放送
(2014-12-11)
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Efficient Optical Trapping of CdTe Quantum Dots by Femtosecond Laser Pulses
(2014-12-11)
Chiang, Wei-Yi
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Okuhata, Tomoki
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Usman, Anwar
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Tamai, Naoto
;
Masuhara, Hiroshi
The development in optical trapping and manipulation has been showing rapid progress, most of it is in the small particle sizes in nanometer scales, substituting the conventional continuous-wave lasers with high-repetition-rate ultrashort laser pulse train and nonlinear optical effects. Here, we evaluate two-photon absorption in optical trapping of 2.7 nm-sized CdTe quantum dots (QDs) with high-repetition-rate femtosecond pulse train by probing laser intensity dependence of both Rayleigh scattering image and the two-photon-induced luminescence spectrum of the optically trapped QDs. The Rayleigh scattering imaging indicates that the two-photon absorption (TPA) process enhances trapping ability of the QDs. Similarly, a nonlinear increase of the two-photon-induced luminescence with the incident laser intensity fairly indicates the existence of the TPA process.
具有由資料控制之電源供應的靜態隨機存取記憶體
(2014-12-11)
莊景德
;
楊皓義
;
夏茂墀
;
林勇維
;
盧建宇
Characterizing the electrical properties of raised S/D junctionless thin-film transistors with a dual-gate structure
(2014-12-11)
Cheng, Ya-Chi
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Chen, Hung-Bin
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Su, Jun-Ji
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Shao, Chi-Shen
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Wang, Cheng-Ping
This letter demonstrates a p-type raised source-and-drain (raised S/D) junctionless thin-film transistors (JL-TFTs) with a dual-gate structure. The raised S/D structure provides a high saturation current (> 1 mu A/mu m). The subthreshold swing (SS) is 100 mV/decade and the drain-induced barrier lowering (DIBL) is 0.8 mV/V, and the I-on/I-off current ratio is over 10(8) A/A for L-g = 1 mu m. Using a thin channel structure obtains excellent performance in the raised S/D structure. Besides the basic electrical characteristics, the dual-gate structure can also be used to adjust V-th in multi-V-th circuit designs. This study examines the feasibility of using JL-TFTs in future three-dimensional (3D) layer-to-layer stacked high-density device applications.
SYSTEM ARCHITECTURE AND METHOD FOR SERVICE CONTINUITY IN HETEROGENEOUS WIRELESS NETWORK
(2014-12-11)
TSENG CHIEN-CHAO
;
CHAN MIN-CHENG
The present invention provides a system architecture and a method for service continuity in heterogeneous wireless networks, which comprises a handover decision module and a session continuity module. The handover decision module is responsible for maintaining link layer association and network layer reachability in according to the underlying network conditions to fulfill the service requirement of applications. When acting as a sender, the session continuity module will select transmission path(s), reestablish the transport connection(s) and tag packets with session IDs and sequence numbers. When acting as a receiver, the session continuity module will identify and reorder packets using session IDs and sequence numbers, regardless of the IP addresses and ports of the packets. To sum up, the present invention can provide service continuity and multipath transmission for network devices.
步行資訊運算系統及步行資訊運算方法
(2014-12-11)
胡竹生
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孫冠群
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鄭期元
「資料庫廠商展」
(2014-12-11)
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利用非軸向光源經角膜反射之像散現象估算虹膜影像清晰度之系統
(2014-12-11)
石勝文
16:00「抽獎啦」
(2014-12-11)
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16:00「抽獎啦」公開透明童叟無欺； 2014年圖書館週-行動閱讀So easy
「推啤酒杯大賽」與「資料庫廠商展」
(2014-12-11)
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「推啤酒杯大賽」與「資料庫廠商展」活動場景暨獎品一覽
主動式影像擷取之光學系統及光學方法
(2014-12-11)
田仲豪
;
謝昇勲
;
黃少宏
推啤酒杯大賽
(2014-12-11)
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平板電腦 1名；西堤牛排券 10名；品田牧場券 21名； 7-11 NT$200 25名； City Cafe(大) 43名；推啤酒杯大賽活動日期：103年12月11日(四)11:30-15:00 活動地點：圖書館2樓大廳活動對象：本校在學學生活動辦法：線上踢完「梅竹足球賽」，即可參加「推啤酒杯大賽」。啤酒杯推到桌子邊緣而不掉下去者，享有抽獎機會。
藥物載體的組合物及其製造方法
(2014-12-11)
劉典謨
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張純瑜
;
周輔宣
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顏廷祐
上橋驅動電路
(2014-12-11)
陳宗麟
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張翼
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成維華
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鄭泗東
;
鄭時龍
Thin film Transistor with UV light Absorber Layer
(2014-12-11)
SHIEH Han-Ping D.
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LIU Po-Tsun
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TSAI Yun-Chu
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TSAI Min-Yen
;
TENG Li-Feng
A thin film transistor comprises a transparent substrate, a gate is disposed on the transparent substrate, a gate insulator is disposed on the gate and the transparent substrate, an active layer is disposed on the gate insulator, an electrode layer is electrically connected the active layer and the portion of the active layer is exposed, and an ultraviolet light absorbing layer is disposed on the electrode layer. By using the advantage of the ultraviolet light absorbing layer with the range of visible light transmittance and with the component protection, preventing the optical characteristics of the thin film transistor from the outside moisture is achieved, and by adjusting the parameters in the thin film deposition process to change its conductivity.
「好刊大放送喜歡就帶走」
(2014-12-11)
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「好刊大放送喜歡就帶走」活動場景
熱分析模型建立方法及其非暫時性電腦可讀取紀錄媒體
(2014-12-11)
陳健章
;
鄭裕庭
Individually Adapted LC-lens Array for 3D Applications
(2014-12-12)
Huang, Yi-Pai
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Jen, Tai-Hsieng
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Chang, Yu-Cheng
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Shieh, Po-Yuan
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Chen, Chi-Wei
A low driving voltage with fast response LC-lens was developed. By implementing the LC-lens as an array structure, it can be adaptively used for 2D/3D switching and 3D rotation on auto- stereoscopic display. Additionally, it also can be utilized as a depth sensor for 3D capturing.
The Appell function F-1 and Regge string scattering amplitudes
(2014-12-12)
Lee, Jen-Chi
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Yang, Yi
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電子物理學系
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Department of Electrophysics
We show that each 26D open bosonic Regge string scattering amplitude (RSSA) can be expressed in terms of one single Appell function F-1 in the Regge limit. This result enables us to derive infinite number of recurrence relations among RSSA at arbitrary mass levels, which are conjectured to be related to the known SL(5, C) dynamical symmetry of F-1. In addition, we show that these recurrence relations in the Regge limit can be systematically solved so that all RSSA can be expressed in terms of one amplitude. All these results are dual to high energy symmetries of fixed angle string scattering amplitudes discovered previously [4-8]. (C) 2014 The Authors. Published by Elsevier B.V.
The effect of free-standing GaN substrate on carrier localization in ultraviolet InGaN light-emitting diodes
(2014-12-13)
Tsai, Ming-Ta
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Chu, Chung-Ming
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Huang, Che-Hsuan
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Wu, Yin-Hao
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Chiu, Ching-Hsueh
In this study, we have grown 380-nm ultraviolet light-emitting diodes (UV-LEDs) based on InGaN/AlInGaN multiple quantum well (MQW) structures on free-standing GaN (FS-GaN) substrate by atmospheric pressure metal-organic chemical vapor deposition (AP-MOCVD), and investigated the relationship between carrier localization degree and FS-GaN. The micro-Raman shift peak mapping image shows low standard deviation (STD), indicating that the UV-LED epi-wafer of low curvature and MQWs of weak quantum-confined Stark effect (QCSE) were grown. High-resolution X-ray diffraction (HRXRD) analyses demonstrated high-order satellite peaks and clear fringes between them for the UV-LEDs grown on the FS-GaN substrate, from which the interface roughness (IRN) was estimated. The temperature-dependent photoluminescence (PL) measurement confirmed that the UV-LEDs grown on the FS-GaN substrate exhibited better carrier confinement. Besides, the high-resolution transmission electron microscopy (HRTEM) and energy-dispersive spectrometer (EDS) mapping images verified that the UV-LEDs on FS-GaN have fairly uniform distribution of indium and more ordered InGaN/AlInGaN MQW structure. Clearly, the FS-GaN can not only improve the light output power but also reduce the efficiency droop phenomenon at high injection current. Based on the results mentioned above, the FS-GaN can offer UV-LEDs based on InGaN/AlInGaN MQW structures with benefits, such as high crystal quality and small carrier localization degree, compared with the UV-LEDs on sapphire.