Browsing by Issue Date, starting with "2015-05-17"
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Item type:Item, 大學申請 淪多「元」入學(2015-05-17) ;謝宜寧 ;Department of Communication and Technology傳播與科技學系104年大學個人申請錄取人數和錄取率都創下歷史新高。然而,多元入學的方案卻存在許多爭議。Item type:Item, 日本舞踊課 探索優美內涵(2015-05-17) ;簡品心 ;林霈楨 ;Department of Communication and Technology傳播與科技學系臺灣近來出現許多日本舞踊的課程,讓民眾以輕鬆的方式進入日本舞世界,且此種舞蹈不受年齡限制。Item type:Item, 無線充電夯 知識一把抓(2015-05-17) ;顏晟宇 ;Department of Communication and Technology傳播與科技學系充電不再綁手綁腳,由各大科技廠商攜手結盟,帶領消費者走入無線充電的時代。Item type:Item, 歷史承載 東歐動畫之流(2015-05-17) ;侯怡安 ;Department of Communication and Technology傳播與科技學系在二戰間受迫的歷史下使東歐動畫發展出色調陰暗、議題嚴肅的內容,也多用象徵性畫面來呈現整部片的主題。Item type:Item, 邊荒傳奇 階級背後的意義(2015-05-17) ;林燕婷 ;Department of Communication and Technology傳播與科技學系《邊荒傳說》揭露九品官人法下,世襲社會中的種種無奈,歷經近兩千年的現代社會,也有著同樣的醜態。Item type:Item, Item type:Item, 跳脫框架 教育也能不太乖(2015-05-17) ;黃馨儀 ;Department of Communication and Technology傳播與科技學系以「不太乖」為名,螢光色的孔子做為LOGO,二○一五年五月九日,不太乖教育節於華山文創園區正式展開。Item type:Item, 它叫蘆洲 是我的家鄉(2015-05-17) ;陳亞柔 ;Department of Communication and Technology傳播與科技學系關於我的家鄉,蘆洲,我很少地去探究他的過去,而這篇文章便是我去理解家鄉的一個過程記錄。Item type:Item, 老兵與男孩 解開種族癥結(2015-05-17) ;吳建勳 ;Department of Communication and Technology傳播與科技學系當一位帶有種族歧視的韓戰退休老兵,遇上一群新的苗族移民鄰居,會產生什麼樣的衝突和火花?Item type:Item, 總編輯的話(2015-05-17) ;許鴻財 ;Department of Communication and Technology傳播與科技學系本期為喀報二一五期,共有14篇稿件,在數量上面為本學期最少。不過媒材使用豐富,電視專題二篇,新聞圖表二篇、文字六篇,動畫四篇、照片故事一篇。 本期頭題為候怡安的〈歷史承載 東歐動畫之流〉,從東歐動畫出發,來探討嚴肅、陰暗、政治議題的非主流的表現方式,打破劇情片起承轉合的故事發展方向,讓觀眾們打開另一扇觀賞之窗。次題為洪雯倩的〈動物運輸 已成問題〉,以動畫的方式來深入呈現去年阿河(河馬)跳車的過程,並探討臺灣運輸設備不完善的問題。 另外,在推薦文章方面,張婷芳的〈我的快樂鳥日子〉心情故事,回憶童年時與鳥兒相處的快樂時光,深切而感人,更以歷史人物呂布與紹蟬的性格來做譬喻,讓鳥兒更加生動活潑。而李恬芳的〈網路霸凌 言論自由變凶器〉以台灣小模楊又穎因不堪網友言論攻擊和工作壓力而輕生,讓網路霸凌的議題再用新的觀點去探討。 本期的側欄廣告為〈畢業旅行好去處〉隨著畢業潮的到來,以心理測驗極富趣味的動畫來建議適合個人的旅遊景點,讓人看都想出國走走。Item type:Item, 我的快樂鳥日子(2015-05-17) ;張婷芳 ;Department of Communication and Technology傳播與科技學系描述自己的養鳥初體驗與獨自照顧幼鳥的經驗,到最後的別離。Item type:Item, 大學點滴 歷歷在目(2015-05-17) ;劉雨婕 ;Department of Communication and Technology傳播與科技學系時光匆匆,大學生活轉眼間只剩一年多,但過去三年的片段回憶卻縈繞心頭,無法忘懷。Item type:Item, 網路霸凌 言論自由變凶器(2015-05-17) ;李恬芳 ;Department of Communication and Technology傳播與科技學系四月二十一日台灣小模楊又穎因不堪網路霸凌和工作壓力,而走上自殺之路,讓網路霸凌議題再度浮出檯面。Item type:Item, 動物運輸 已成問題(2015-05-17) ;洪雯倩 ;Department of Communication and Technology傳播與科技學系在二○一四年,一隻名為「阿河」的河馬因為運輸上的疏失,造成死亡,也揭開動物運輸上的缺失。Item type:Item, 夜市人物百態 花園夜市(2015-05-17) ;張凱翔 ;Department of Communication and Technology傳播與科技學系花園夜市是臺南最富盛名的夜市之一,在其中處處可見豐富的人文景觀。Item type:Item, Synthesis and characterization of two new benzothiadiazole- and fused bithiophene based low band-gap D-A copolymers: Application as donor bulk heterojunction polymer solar cells(2015-05-18) ;Keshtov, M. L. ;Sharma, G. D. ;Kuklin, S. A. ;Ostapov, I. E.Godovsky, D. Yu.Two new narrow bandgap D-A conjugated copolymers P1 and P2 containing different fused thiophene donor unit and same benzothiadiazole acceptor unit were synthesized by Stille cross-coupling polymerization, and characterized by H-1 NMR, elemental analysis and GPC, TGA, DSC. Cyclic voltammetry measurement showed that the HOMO energy level both copolymers is deep lying (-5.10 and -5.35 eV for P1 and P2, respectively) which show that copolymers has good stability in the air and assured a higher open circuit voltage when it photovoltaic application. These copolymer were used as donor along with PC71BM and the BHJ polymer solar cells based on P1:PC71BM and P2:PC71BM processed with chloroform (CF) solvent showed over all PCE of 4.54% and 4.36%, respectively. Additionally, the PCE was improved up to 5.62% and 5.24% for P1:PC71BM and P2:PC71BM active layer processed with DIO (4 v%)/CF solvent. The enhancement in the PCE has been attributed to improved nanoscale morphology and crystalline nature of active layer as well as charge transport in the device with the addition of DIO, due to the higher boiling point of DIO causing slow evaporation rate during the film formation. (C) 2015 Elsevier Ltd. All rights reserved.Item type:Item, 450-nm GaN laser diode enables high-speed visible light communication with 9-Gbps QAM-OFDM(2015-05-18) ;Chi, Yu-Chieh ;Hsieh, Dan-Hua ;Tsai, Cheng-Ting ;Chen, Hsiang-YuKuo, Hao-ChungA TO-38-can packaged Gallium nitride (GaN) blue laser diode (LD) based free-space visible light communication (VLC) with 64-quadrature amplitude modulation (QAM) and 32-subcarrier orthogonal frequency division multiplexing (OFDM) transmission at 9 Gbps is preliminarily demonstrated over a 5-m free-space link. The 3-dB analog modulation bandwidth of the TO-38-can packaged GaN blue LD biased at 65 mA and controlled at 25 degrees C is only 900 MHz, which can be extended to 1.5 GHz for OFDM encoding after throughput intensity optimization. When delivering the 4-Gbps 16-QAM OFDM data within 1-GHz bandwidth, the error vector magnitude (EVM), signal-to-noise ratio (SNR) and bit-error-rate (BER) of the received data are observed as 8.4%, 22.4 dB and 3.5 x 10(-8), respectively. By increasing the encoded bandwidth to 1.5 GHz, the TO-38-can packaged GaN blue LD enlarges its transmission capacity to 6 Gbps but degrades its transmitted BER to 1.7 x 10(-3). The same transmission capacity of 6 Gbps can also be achieved with a BER of 1 x 10(-6) by encoding 64-QAM OFDM data within 1-GHz bandwidth. Using the 1.5-GHz full bandwidth of the TO-38-can packaged GaN blue LD provides the 64-QAM OFDM transmission up to 9 Gbps, which successfully delivers data with an EVM of 5.1%, an SNR of 22 dB and a BER of 3.6 x 10(-3) passed the forward error correction (FEC) criterion. (C) 2015 Optical Society of AmericaItem type:Item, Polarization modulation for fluorescence emission difference microscopy(2015-05-18) ;Wang, Nan ;Kobayashi, Takayoshi ;先進超快雷射研究中心Adv Ultrafast Laser CtrEffects of the polarization on subtracted images in fluorescence emission difference microscopy are numerically investigated based on vector beam diffraction theory and alteration of Jones matrices. Parameters of resolution, signal loss, and amplitude of negative sidebands after subtraction are discussed along with the polarization of excitation beams and sample sizes. The effects of polarization on the ellipticity and subtraction threshold are also given. (C) 2015 Optical Society of AmericaItem type:Item, Numerical calibration of the spatial overlap for subtraction microscopy(2015-05-18) ;Wang, Nan ;Kobayashi, Takayoshi ;電機學院College of Electrical and Computer EngineeringRecently proposed subtraction microscopy provides a simple and compact approach to enhance the spatial resolution. However, inevitable imperfect overlap of the Gaussian and donut spots could deteriorate the quality of the subtracted images, while this effect is rarely investigated quantitatively. Based on vector diffraction theory, the effects of spatial displacements on the image resolution, signal intensity, and subtraction threshold are studied with several microscope parameters here. The peakposition shift is found to be a useful and convenient parameter to inspect and calibrate the spatial overlap of excitation spots in such microscopes. (C) 2015 Optical Society of AmericaItem type:Item, A Unique Approach to Generate Self-Aligned SiO2/Ge/SiO2/SiGe Gate-Stacking Heterostructures in a Single Fabrication Step(2015-05-19) ;Lai, Wei-Ting ;Yang, Kuo-Ching ;Hsu, Ting-Chia ;Liao, Po-HsiangGeorge, ThomasWe report a first-of-its-kind, unique approach for generating a self-aligned, gate-stacking heterostructure of Ge quantum dot (QD)/SiO2/SiGe shell on Si in a single fabrication step. The 4-nm-thick SiO2 layer between the Ge QD and SiGe shell fabricated during the single-step process is the result of an exquisitely controlled dynamic balance between the fluxes of oxygen and silicon interstitials. The high-quality interface properties of our "designer" heterostructure are evidenced by the low interface trap density of as low as 2-4 x 10(11) cm(-2) eV(-1) and superior transfer characteristics measured for Ge-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Thanks to the very thin interfacial SiO2 layer, carrier storage within the Ge QDs with good memory endurance was established under relatively low-voltage programming/erasing conditions. We hope that our unique self-aligned, gate-stacking heterostructure provides an effective approach for the production of next-generation, high-performance Ge gate/SiO2/SiGe channel MOSFETs.