Browsing by Issue Date, starting with "2015-08-13"

Now showing 1 - 20 of 21173

Reflective Displays Based on Dye-Doped Bistable Chiral-Tilted Homeotropic Nematics
(2015-08-13)
Huang, Kuan-Chung
;
Lee, Yun-Han
;
Lee, Wei
;
影像與生醫光電研究所
;
Institute of Imaging and Biomedical Photonics
Dielectric and Electro-Optical Properties of Polymer-Stabilized-Blue-Phase Cells
(2015-08-13)
Hsu, Hsuan-Tsung
;
Wu, Po-Chang
;
Lee, Wei
;
光電學院
;
影像與生醫光電研究所
YKL-40 regulated epithelial-mesenchymal transition and migration/invasion enhancement in non-small cell lung cancer
(2015-08-15)
Jefri, Malvin
;
Huang, Yi-Ning
;
Huang, Wen-Chien
;
Tai, Chun-San
;
Chen, Wen-Liang
Background: YKL-40 is a secreted inflammatory protein that its overexpression has been reported to correlate with poor outcome of various malignant diseases, especially in cancer. However, the function of this protein is still unclear. Methods: The clinical prognosis of non-small cell lung cancers (NSCLC) patients and their clinical YKL-40 expressions were obtained from the Prognoscan database. The expressions of YKL-40 in patient samples were determined by Western Blotting assay. YKL-40 gene knockdown and overexpression were performed on NSCLC cancer cells (CL1-1 and CL1-5). The cells were investigated for their epithelial-mesenchymal transition (EMT) markers gene modulation through Western Blotting and RT-PCR. Further cell metastatic abilities were assessed by transwell migration and invasion assay. Result: In this study, YKL-40 was observed to be highly expressed in NSCLC specimens. Furthermore, determined by the PrognoScan database analysis, patients with high expression levels of YKL-40 were found with poor prognosis. In the in vitro study, different characteristics of NSCLC cell lines (CL1-1, H23, H838, CL1-5, and H2009) were used as study models, where YKL-40 expression levels were determined to correlate with the phenotypic characteristics of cancer metastasis. In this study, YKL-40 was demonstrated to regulate EMT marker expressions such as Twist, Snail, Slug, N-cadherin, Vimentin, and E-cadherin. The protein's affects in cancer cell migration and invasion were also observed in YKL-40 overexpression or knock down NSCLC cell lines. Conclusion: All of results from this study suggest that YKL-40 is a major factor in NSCLC metastasis. Thus, YKL-40 may serve as therapeutic target for NSCLC patients in the future.
Method to evaluate afterpulsing probability in single-photon avalanche diodes
(2015-08-15)
Tzou, Bo-Wei
;
Wu, Jau-Yang
;
Lee, Yi-Shan
;
Lin, Sheng-Di
;
電機工程學系
We propose and demonstrate a new method for evaluating the afterpulsing effect in single-photon avalanche photodiodes (SPADs). By analyzing the statistical property of dark count rate, we can quantitatively characterize afterpulsing probability (APP) of a SPAD. In experiment, the temperature-dependent low dark count rate (DCR) distribution becomes non-Poissonian at lower temperature and has higher excess bias as the afterpulsing effect becomes significant. Our work provides a flexible way to examine APP in either single-device or circuit level. (C) 2015 Optical Society of America
YKL-40 regulated epithelial-mesenchymal transition and migration/invasion enhancement in non-small cell lung cancer
(2015-08-15)
Jefri, Malvin
;
Huang, Yi-Ning
;
Huang, Wen-Chien
;
Tai, Chun-San
;
Chen, Wen-Liang
Background: YKL-40 is a secreted inflammatory protein that its overexpression has been reported to correlate with poor outcome of various malignant diseases, especially in cancer. However, the function of this protein is still unclear. Methods: The clinical prognosis of non-small cell lung cancers (NSCLC) patients and their clinical YKL-40 expressions were obtained from the Prognoscan database. The expressions of YKL-40 in patient samples were determined by Western Blotting assay. YKL-40 gene knockdown and overexpression were performed on NSCLC cancer cells (CL1-1 and CL1-5). The cells were investigated for their epithelial-mesenchymal transition (EMT) markers gene modulation through Western Blotting and RT-PCR. Further cell metastatic abilities were assessed by transwell migration and invasion assay. Result: In this study, YKL-40 was observed to be highly expressed in NSCLC specimens. Furthermore, determined by the PrognoScan database analysis, patients with high expression levels of YKL-40 were found with poor prognosis. In the in vitro study, different characteristics of NSCLC cell lines (CL1-1, H23, H838, CL1-5, and H2009) were used as study models, where YKL-40 expression levels were determined to correlate with the phenotypic characteristics of cancer metastasis. In this study, YKL-40 was demonstrated to regulate EMT marker expressions such as Twist, Snail, Slug, N-cadherin, Vimentin, and E-cadherin. The protein\'s affects in cancer cell migration and invasion were also observed in YKL-40 overexpression or knock down NSCLC cell lines. Conclusion: All of results from this study suggest that YKL-40 is a major factor in NSCLC metastasis. Thus, YKL-40 may serve as therapeutic target for NSCLC patients in the future.
Far-infrared quasi-monochromatic perfect absorption in a thin GaAs film on gold
(2015-08-15)
Yen, Shun-Tung
;
Chung, Pei-Kang
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
We study the far-infrared absorption properties of a thin GaAs film on Au. We show that a 1.2-mu m GaAs film on Au can completely absorb an electromagnetic wave of 7.9 THz and totally reflect the waves of frequencies not very close to 7.9 THz. The uniformity of the layered structure enables observation of a quasi-monochromatic, nearly perfect absorption of 96% in a 1.4-mu m GaAs film. The absorption can be high for a wide range of incident angles. (C) 2015 Optical Society of America
Square-core single-mode-fiber (SC-SMF) with high bending tolerance for data center networks
(2015-08-15)
Chow, C. W.
;
Huang, S. P.
;
Yeh, C. H.
;
Sung, J. Y.
;
Liu, P. F.
Square-core optical fiber has been proposed recently for high optical power delivery in industrial processing tools with core size larger than 400 x 400 mu m(2). In this work, we first study the possibility of significantly reducing the core side to single-mode condition (i.e. 9 x 9 mu m(2)) at optical communication wavelength. In the proposed square-core single-mode-fiber (SC-SMF), high bandwidth-distance product and low bending loss are achieved. We also discuss the fabrication of the SC-SMF. After this, the bending losses of the SC-SMF and standard single mode fiber (SSMF) are analyzed and compared. Finally, 10 Gb/s signal transmission using conventional on-off keying (OOK) and orthogonal frequency division multiplexing (OFDM) passing through 200 m, 500 m and 1 km SC-SMFs are performed. Negligible power penalty is observed. We believe that this can be another choice of high bending tolerance fiber which is simple to manufacture. (C) 2015 Elsevier B.V. All rights reserved.
Access to oxindoles, isatins, and isoxazolinones via multicomponent reactions and facile 6 pi electrocyclization
(2015-08-16)
Chuang, Shih-Ching
;
Deng, Jie-Cheng
;
應用化學系
;
Department of Applied Chemistry
Complex refractive index of secondary organic aerosol generated from isoprene/NOx photooxidation in the presence and absence of SO2
(2015-08-16)
Nakayama, Tomoki
;
Sato, Kei
;
Tsuge, Masashi
;
Imamura, Takashi
;
Matsumi, Yutaka
We report the first measurements of the complex refractive index (RI) at 375, 405, 532, and 781nm for secondary organic aerosol (SOA) generated from isoprene/NOx photooxidation. At all wavelengths studied, slightly greater real components of the RI were observed for the SOA generated in the absence of SO2 compared with those generated in its presence. Considering the chemical properties, the differences in the oxidation state and/or ratio of particle density to molecular weight of compounds in the SOA are considered to be the main factors determining the real components. The imaginary components at 532nm were found to increase with increasing initial SO2 concentration. The highly conjugated oligomers are suggested to be plausible chromophore candidates. This study suggests that when large amounts of SOA are generated after mixing of isoprene with NOx and SOx, light absorption of these SOAs may compete with that of black carbon, especially at ultraviolet wavelengths.
Rapid and complete removal of nitrophenols by heterostructured gold-magnetite nanocatalysts
(2015-08-16)
Doong, Ruey-An
;
Lin, Fen-Hsin
;
環境工程研究所
;
Institute of Environmental Engineering
Infrared absorption of iodomethylperoxy (syn-ICH2OO) radical generated upon photolysis of CH2I2 and O-2 in solid para-H-2
(2015-08-18)
Lee, Yu-Fang
;
Lee, Yuan-Pern
;
應用化學系
;
應用化學系分子科學碩博班
;
Department of Applied Chemistry
Irradiation of a para-hydrogen (p-H-2) matrix containing diiodomethane (CH2I2) and O-2 at 3.2 K with light at 280 +/- 20 nm, followed by annealing of the matrix at 4.0 K, yielded infrared (IR) absorption lines at 2982.4, 1408.9, 1231.8, 1226.5/1225.6, 1085.6, 917.7, 841.6/841.1, 550.5, and 490.2 cm(-1) that are assigned to the syn-iodomethylperoxy (syn-ICH2OO) radical. Further irradiation of the matrix at 365 nm diminished these features. Experiments with CH2I2 and O-18(2) yielded lines of syn-(ICH2OO)-O-18-O-18 at 1407.3, 1228.1/1227.7, 1217.7/1217.0, 1031.5, 899.9/899.4, 836.7/836.0, and 473.6 cm(-1). The assignments are based on the photolytic behaviour and comparisons of observed vibrational wavenumbers, IR intensities, and O-18-isotopic shifts with those predicted with the B3LYP/aug-cc-pVTZ-pp method. The observation is consistent with a mechanism that, upon photolysis of CH2I2 at 280 nm, CH2I was formed and subsequently reacted with O-2 to yield syn-ICH2OO. Compared with the gaseous reaction CH2I + O-2 -> CH2OO + I at low pressure, observation of ICH2OO in a p-H-2 matrix instead of CH2OO in the gaseous phase indicates that the excess energy of internally excited ICH2OO, produced upon reaction of CH2I + O-2, was rapidly quenched in the matrix so that ICH2OO became readily stabilised without further decomposition to form CH2OO + I.
The evolutionary dynamics of tRNA-gene copy number and codon-use in E-coli
(2015-08-19)
McDonald, Michael J.
;
Chou, Chih-Hung
;
Swamy, Krishna B. S.
;
Huang, Hsien-Da
;
Leu, Jun-Yi
Background: The introduction of foreign DNA by Lateral Gene Transfer (LGT) can quickly and drastically alter genome composition. Problems can arise if the genes introduced by LGT use codons that are not suited to the host's translational machinery. Here we investigate compensatory adaptation of E. coli in response to the introduction of large volumes of codons that are rarely used by the host genome. Results: We analyze genome sequences from the E. coli/Shigella complex, and find that certain tRNA genes are present in multiple copies in two pathogenic Shigella and O157:H7 subgroups of E. coli. Furthermore, we show that the codons that correspond to these multi-copy number tRNA genes are enriched in the high copy number Selfish Genetic Elements (SGE's) in Shigella and laterally introduced genes in O157:H7. We analyze the duplicate copies and find evidence for the selective retention of tRNA genes introduced by LGT in response to the changed codon content of the genome. Conclusion: These data support a model where the relatively rapid influx of LGT genes and SGE's introduces a large number of genes maladapted to the host's translational machinery. Under these conditions, it becomes advantageous for the host to retain tRNA genes that are required for the incorporation of amino acids at these codons. Subsequently, the increased number of copies of these specific tRNA genes adjusts the cellular tRNA pool to the demands set by global shifts in codon usage.
METHOD FOR GROWING ALUMINUM INDIUM NITRIDE FILMS ON SILICON SUBSTRATE
(2015-08-20)
CHANG Li
;
CHEN Jr-Yu
;
CHEN Wei-Chun
;
LIN Pei-Yin
A method for growing aluminum indium nitride (AlInN) films on silicon substrates comprises several steps: firstly, arranging a silicon substrate in a reaction chamber; secondly, providing multiple reaction gases in the reaction chamber, wherein the reaction gases include aluminum precursors, indium precursors and nitrogen-containing gases; finally, dynamically adjusting flow rates of the reaction gases and directly growing an AlInN layer on the silicon substrate via a crystal growth process. By directly forming an AlInN layer on the silicon substrate, lattice matching is increased, residual thermal stress is reduced and film quality is improved. In addition, fabrication process is simplified and thus cost is reduced.
GATE STRUCTURE
(2015-08-20)
CHANG Yi
;
KUO Chien-I
;
HSU Heng-Tung
The present invention discloses a gate structure, which is applied for an electronic component comprising a substrate and an active region defined thereon, and such the gate structure is disposed in the active region and is a T-shaped gate having a stem with a height of 250 nm. Preferably, the gate structure has a gate length of 60 nm.
交大e-News第192期-綠能及智慧行動車工作坊圓滿落幕　13組隊伍雀屏中選獲角逐MIT名額門票
(2015-08-20)
國立交通大學秘書室
;
Secretariat
產生室內地圖的方法及系統
(2015-08-21)
邱俊瑋
;
羅棨鐘
;
曾煜棋
;
高永威
;
郭倫嘉
一種產生室內地圖的方法，包括：感測一電子裝置之一慣性資訊及一無線訊號強度資訊；接收一建築物框圖、上述慣性資訊及上述無線訊號強度資訊，其中上述建築物框圖係由至少一網格所組成，且包括至少一固定地標；依據上述慣性資訊產生一移動路徑；根據上述移動路徑及上述無線訊號強度資訊尋找至少一衍生地標；依據上述固定地標及上述衍生地標切割上述移動路徑為複數路徑片段；以及依據上述固定地標、上述衍生地標及上述無線訊號強度資訊將上述路徑片段匹配至上述建築物框圖，以產生一室內地圖；其中切割上述移動路徑為上述路徑片段係先依據上述固定地標切割上述移動路徑，再判斷上述路徑片段是否具有上述衍生地標，若上述路徑片段具有上述衍生地標，則再由上述衍生地標切斷。
高分子太陽能電池及其製作方法
(2015-08-21)
陳方中
;
簡上傑
一種高分子太陽能電池的製作方法，包括：提供一基板；於該基板上形成一第一導電層；將一有機半導體主動層材料與一有機修飾材料溶入一有機溶劑中，以形成一混合物；將該混合物配置於該第一導電層上；移除該有機溶劑，以使該有機修飾材料與該有機半導體主動層材料產生相分離，而形成由該有機修飾材料作成的一有機修飾層與由該有機半導體主動層材料作成的一有機半導體主動層，其中該有機半導體層位於該有機修飾層與該第一導電層之間；以及於該有機修飾層上形成一第二導電層。
製備抑制血管新生之醫藥載體及醫藥組成物之用途
(2015-08-21)
廖光文
;
何姝怡
一種製備抑制血管新生之醫藥載體之用途，其中，該醫藥載體包括：一藥物載體；以及一多肽，連接於該藥物載體表面，該多肽包括血管內皮生長因子之受器結合區塊以及一免疫球蛋白片段，且該免疫球蛋白片段係與該血管內皮生長因子之受器結合區塊連接；一核酸分子，連接於該藥物載體表面，且該核酸分子包括血管內皮生長因子之受器結合區塊之核酸序列。
雜訊過濾電路以及積體電路
(2015-08-21)
柯明道
;
顏承正
;
陳東暘
一種雜訊過濾電路，適用於一積體電路，包括：一解耦合單元，耦接至上述積體電路之一電源接合墊，用以相應於位於上述積體電路之上述電源接合墊的來自一靜電放電事件之一瞬變電壓，而產生一第一電流；以及一電流放大電路，耦接於上述解耦合單元以及上述積體電路之上述電源接合墊，用以根據上述第一電流，從上述積體電路之上述電源接合墊汲取出一第二電流，其中上述解耦合單元包括至少一二極體，其中上述二極體之一接面電容形成一解耦合電容，用以解耦合位於上述積體電路之上述電源接合墊的上述瞬變電壓。
增強型氮化鎵電晶體及其形成方法
(2015-08-21)
張翼
;
林岳欽
;
王煥中
一種增強型氮化鎵電晶體，包括：一基板；一異質結構，該異質結構在該基板上，其中該異質結構係由Inx Al1-x n/AlN以及AlGaN/GaN群組中所選出；一p型元素磊晶成長層，p型元素磊晶成長層在該異質結構上；一汲極歐姆接觸及一源極歐姆接觸，該汲極歐姆接觸及該源極歐姆接觸在該異質結構且分別設置在該p型元素磊晶成長層之兩側邊；一閘極結構，該閘極結構在該p型元素磊晶成長層上且與該汲極歐姆接觸及該源極歐姆接觸彼此分離；以及一表面鈍化層，該表面鈍化層包覆該汲極歐姆接觸、該源極歐姆接觸、該p型元素磊晶成長層及覆蓋部份該閘極結構。