Browsing by Issue Date, starting with "2015-12-20"
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Item type:Item, 在地青年返鄉 深耕苗栗(2015-12-20) ;許雅筑 ;Department of Communication and Technology傳播與科技學系「老家,屬於每一個人的家。」短短一句經營理念,道出陳鵬文對家鄉人文的眷戀與情分。Item type:Item, 台灣高等教育 本質流失(2015-12-20) ;曾煥富 ;Department of Communication and Technology傳播與科技學系台灣教育本質上,擁有內容上的不健全與矛盾。Item type:Item, 台灣高教敲警鐘(2015-12-20) ;王雪琪 ;Department of Communication and Technology傳播與科技學系台灣高等教育所面對的危機,主因是不是少子化造成的?Item type:Item, MOOCs熱潮 高教危機轉機(2015-12-20) ;許馨仁 ;Department of Communication and Technology傳播與科技學系我國於二〇一四年提出「磨課師分項計畫」,引進西方MOOC數位學習模式。政策施行至今,產生不少爭議。Item type:Item, 總編輯的話(2015-12-20) ;吳和謙 ;Department of Communication and Technology傳播與科技學系本期為喀報第兩百三十一期,共有十二篇稿件。類目以社會議題為主,相當充實,側欄廣告則以即將到來的聖誕節為主題,溫馨動人。Item type:Item, 長青生活 樂齡演出(2015-12-20) ;何佳頴 ;Department of Communication and Technology傳播與科技學系國立臺南生活美學館舉辦成果發表會,展現長青生活的活力與價值。Item type:Item, 媽寶 大學新課題(2015-12-20) ;唐宜嘉 ;Department of Communication and Technology傳播與科技學系各大專院校於十月份召開新生家長座談會,出現許多媽寶大學生與寶媽家長,激起社會大眾的關注與討論。Item type:Item, Item type:Item, 消費革命 無現金時代(2015-12-20) ;徐義薇 ;Department of Communication and Technology傳播與科技學系從第三方支付平台與行動支付新型態,借鏡國外探討台灣現今電子商務的發展。Item type:Item, 手作甜 填胃也甜心(2015-12-20) ;薛如真 ;Department of Communication and Technology傳播與科技學系甜點能帶來幸福的感受,而甜點師為人們製造幸福。Item type:Item, 當個實況主 分享遊戲喜悅(2015-12-20) ;蔡佳珊 ;Department of Communication and Technology傳播與科技學系魯蛋在二〇一一年開始接觸實況,並因為一款遊戲一夕成名。Item type:Item, 少女的生活食譜(2015-12-20) ;孔婉寧 ;Department of Communication and Technology傳播與科技學系黃愛然,仍是藝術大學的學生,用甜點創立粉絲專頁,建立廣大的粉絲。Item type:Item, 老有所養 臺灣做得怎樣(2015-12-20) ;竇玉帥 ;Department of Communication and Technology傳播與科技學系對臺灣三百萬老年人口來說,最牽腸掛肚的問題便是如何養老。Item type:Item, Black hole remnant in asymptotic anti-de Sitter space(2015-12-21) ;Wen, Wen-Yu ;Wu, Shang-Yu ;電子物理學系Department of ElectrophysicsThe solution of a remnant was suggested for the black hole ground state after surface gravity is corrected for the loop quantum effect. On the other hand, a Schwarzschild black hole in asymptotic anti-de Sitter space would tunnel into the thermal soliton solution known as the Hawking-Page phase transition. In this letter, we investigate the low temperature phase of a three-dimensional Banados-Teitelboim-Zanelli (BTZ) black hole and four-dimensional AdS Schwarzschild black hole. We find that the thermal soliton is energetically favored rather than the remnant solution at low temperature in three dimensions, while a Planck-size remnant is still possible in four dimensions. Though the BTZ remnant seems energetically disfavored, we argue that it is still possible to find in the overcooled phase if strings were present, and its implication is discussed.Item type:Item, A stochastic simulation method for the assessment of resistive random access memory retention reliability(2015-12-21) ;Berco, Dan ;Tseng, Tseung-Yuen ;電子工程學系及電子研究所Department of Electronics Engineering and Institute of ElectronicsThis study presents an evaluation method for resistive random access memory retention reliability based on the Metropolis Monte Carlo algorithm and Gibbs free energy. The method, which does not rely on a time evolution, provides an extremely efficient way to compare the relative retention properties of metal-insulator-metal structures. It requires a small number of iterations and may be used for statistical analysis. The presented approach is used to compare the relative robustness of a single layer ZrO2 device with a double layer ZnO/ZrO2 one, and obtain results which are in good agreement with experimental data. (C) 2015 AIP Publishing LLC.Item type:Item, 交大e-News第200期-頒授廣達電腦梁次震副董事長、翁山蘇姬女士名譽博士學位(2015-12-21) ;國立交通大學秘書室SecretariatItem type:Item, A stochastic simulation method for the assessment of resistive random access memory retention reliability(2015-12-21) ;Berco, Dan ;Tseng, Tseung-Yuen ;電子工程學系及電子研究所Department of Electronics Engineering and Institute of ElectronicsThis study presents an evaluation method for resistive random access memory retention reliability based on the Metropolis Monte Carlo algorithm and Gibbs free energy. The method, which does not rely on a time evolution, provides an extremely efficient way to compare the relative retention properties of metal-insulator-metal structures. It requires a small number of iterations and may be used for statistical analysis. The presented approach is used to compare the relative robustness of a single layer ZrO2 device with a double layer ZnO/ZrO2 one, and obtain results which are in good agreement with experimental data. (C) 2015 AIP Publishing LLC.Item type:Item, Phosphorous Diffuser Diverged Blue Laser Diode for Indoor Lighting and Communication(2015-12-21) ;Chi, Yu-Chieh ;Hsieh, Dan-Hua ;Lin, Chung-Yu ;Chen, Hsiang-YuHuang, Chia-YenAn advanced light-fidelity (Li-Fi) system based on the blue Gallium nitride (GaN) laser diode (LD) with a compact white-light phosphorous diffuser is demonstrated for fusing the indoor whitelighting and visible light communication (VLC). The phosphorous diffuser adhered blue GaN LD broadens luminescent spectrum and diverges beam spot to provide ample functionality including the completeness of Li-Fi feature and the quality of white-lighting. The phosphorous diffuser diverged white-light spot covers a radiant angle up to 120 degrees with CIE coordinates of (0.34, 0.37). On the other hand, the degradation on throughput frequency response of the blue LD is mainly attributed to the selffeedback caused by the reflection from the phosphor-air interface. It represents the current state-ofthe- art performance on carrying 5.2-Gbit/s orthogonal frequency-division multiplexed 16-quadratureamplitude modulation (16-QAM OFDM) data with a bit error rate (BER) of 3.1 x 10(-3) over a 60-cm freespace link. This work aims to explore the plausibility of the phosphorous diffuser diverged blue GaN LD for future hybrid white-lighting and VLC systems.Item type:Item, Experimental realization of ultrathin, double-sided metamaterial perfect absorber at terahertz gap through stochastic design process(2015-12-22) ;Huang, Tsung-Yu ;Tseng, Ching-Wei ;Yeh, Ting-Tso ;Yeh, Tien-TienLuo, Chih-WeiWe design and demonstrate a flexible, ultrathin and double-sided metamaterial perfect absorber (MPA) at 2.39 terahertz (THz), which enables excellent light absorbance under incidences from two opposite sides. Herein, the MPA is fabricated on a lambda(0)/10.1-thick flexible polyethylene terephthalate substrate of epsilon(r) = 2.75 x (1 + 0.12i), sandwiched by two identical randomized metallic patterns by our stochastic design process. Such an MPA provides tailored permittivity and permeability to approach the impedance of free space for minimizing reflectance and a great imaginary part of the refractive index for reducing transmittance and finally results in high absorbance. Both experimental measurement and numerical simulation are in a good agreement. The flexible, ultrathin and double-sided MPA significantly differs from traditional quarter-wavelength absorbers and other single-sided perfect absorbers, paving a way toward practical THz applications in thermal emission, sensing and imaging, communications, stealth technique, and even energy harvesting.Item type:Item, Imaging magnetic and ferroelectric domains and interfacial spins in magnetoelectric La0.7Sr0.3MnO3/PbZr0.2Ti0.8O3 heterostructures(2015-12-23) ;Huang, C-Y ;Zhou, J. ;Tra, V. T. ;White, R.Trappen, R.Strong magnetoelectric coupling can occur at the interface between ferromagnetic and ferroelectric films. Similar to work on interfacial exchange bias, photoemission electron microscopy was utilized to image both magnetic and ferroelectric domains and the resulting interfacial Ti spin in the same locations of La0.7Sr0.3MnO3/PbZr0.2Ti0.8O3 heterostructures. Multiple image analysis techniques, which could be applicable for a variety of fields needing quantitative data on image switching, confirm both improved magnetic switching and an increased population of interfacial spins with increased thickness of the ultrathin La0.7Sr0.3MnO3 layer. The perpendicular orientation of the interfacial spins is also discussed. This work suggests a magnetoelectric dead layer, with reduced interfacial magnetoelectricity when thin magnetic films are present.